US10586727B2 - Suction stage, lamination device, and method for manufacturing laminated substrate - Google Patents

Suction stage, lamination device, and method for manufacturing laminated substrate Download PDF

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US10586727B2
US10586727B2 US15/021,516 US201415021516A US10586727B2 US 10586727 B2 US10586727 B2 US 10586727B2 US 201415021516 A US201415021516 A US 201415021516A US 10586727 B2 US10586727 B2 US 10586727B2
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suction
region
substrate
control valve
wall part
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US20160225655A1 (en
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Emi Matsui
Konosuke HAYASHI
Takahiro Kanai
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Definitions

  • Embodiments of the invention relates to a suction stage, a lamination device, and a manufacturing laminated substrate.
  • Such a suction stage is used in e.g. a substrate lamination step in manufacturing a semiconductor device (see, e.g., Patent Literature 1).
  • the lamination surfaces of two substrates are laminated to each other to form one substrate.
  • the lamination surfaces of two substrates are laminated to each other to form one substrate in the case of e.g. manufacturing what is called an SOI (silicon on insulator) wafer and bonding a glass substrate to a silicon substrate by anode bonding technique.
  • SOI silicon on insulator
  • substrates can be laminated to each other without interposing e.g. an adhesive between the substrates.
  • This can diversify the process condition in the treatment after lamination (such as plasma treatment, heat treatment, and chemical treatment). Furthermore, this can facilitate e.g. p-n junction and embedding of an insulating film.
  • the problem to be solved by the invention is to provide a suction stage, a lamination device, and a method for manufacturing a laminated substrate capable of accurately laminating even deformed substrates.
  • a suction stage includes a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section.
  • the mounting section includes a first wall part provided on an outer peripheral side of one end surface of the mounting section and shaped like a ring, and a second wall part provided inside the first wall part and shaped like a ring.
  • the evacuation section includes a first control valve provided between the evacuation section and a first region between the first wall part and the second wall part, a second control valve provided between the evacuation section and a second region inside the second wall part, and a control section configured to control the first control valve and the second control valve.
  • the control section is configured to control the first control valve and the second control valve so that suction of the first substrate and deactivation of the suction of the first substrate are alternately performed in at least one of the first region and the second region.
  • the suction of the first substrate is deactivated in one of the first region and the second region, the suction of the first substrate is performed in the other region.
  • the suction stage, the lamination device, and the method for manufacturing the laminated substrate capable of accurately laminating even deformed substrates is provided by the embodiment of the invention.
  • FIG. 1 is a schematic view for illustrating a suction stage 101 and a lamination device 100 according to this embodiment.
  • FIG. 2 is a schematic view for illustrating a mounting section 12 .
  • FIG. 3 is an arrow view taken along line A-A in FIG. 2 .
  • FIG. 4 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 5 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIG. 6 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 7 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIG. 8 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 9 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIG. 1 is a schematic view for illustrating a suction stage 101 and a lamination device 100 according to this embodiment.
  • FIG. 2 is a schematic view for illustrating a mounting section 12 .
  • FIG. 3 is an arrow view taken along line A-A in FIG. 2 .
  • the lamination device 100 includes a treatment chamber 11 , a mounting section 12 , a substrate support section 13 , a pressing section 14 , an evacuation section 15 , and a control section 16 .
  • the suction stage 101 includes the mounting section 12 , the evacuation section 15 , and the control section 16 .
  • the treatment chamber 11 is shaped like a box having an air-tight structure.
  • the sidewall of the treatment chamber 11 is provided with an opening 11 a for carry-in/out of e.g. a substrate W 1 (corresponding to an example of the first substrate) and a substrate W 2 (corresponding to an example of the second substrate). Furthermore, the sidewall of the treatment chamber 11 is provided with a gate 11 b capable of air-tightly opening/closing the opening 11 a.
  • the mounting section 12 is provided on the inner bottom surface of the treatment chamber 11 .
  • the mounting section 12 includes a body part 12 a , a wall part 12 b (corresponding to an example of the first wall part), a wall part 12 c (corresponding to an example of the second wall part), a support part 12 d , a hole part 12 e , and a hole part 12 f.
  • part of the support part 12 d is not shown to avoid complexity.
  • the body part 12 a is shaped like a cylinder.
  • the shape of the body part 12 a can be appropriately changed depending on e.g. the shape of the substrate W 1 mounted thereon.
  • the body part 12 a may be shaped like a prism.
  • the wall part 12 b is provided on the end surface 12 a 1 of the body part 12 a on the side on which the substrate W 1 is to be mounted.
  • the wall part 12 b is shaped like a ring and surrounds the outer periphery of the body part 12 a.
  • the wall part 12 c is provided on the end surface 12 a 1 of the body part 12 a .
  • the wall part 12 c is provided inside the wall part 12 b .
  • the wall part 12 c is shaped like a ring.
  • the height dimension (dimension from the end surface 12 a 1 to the top surface) of the wall part 12 c is equal to the height dimension of the wall part 12 b.
  • the wall part 12 b and the wall part 12 c thus provided partition the end surface 12 a 1 of the body part 12 a into two regions. That is, the end surface 12 a 1 is partitioned into a region 12 g (corresponding to an example of the first region) located between the wall part 12 b and the wall part 12 c , and a region 12 h (corresponding to an example of the second region) located inside the wall part 12 c.
  • suction of the substrate W 1 can be separately controlled on the outer peripheral side and the central part side. Furthermore, the area of the top surface of the wall part 12 b and the area of the top surface of the wall part 12 c are small. This can reduce the influence on the suction performance.
  • the deformation of the substrate W 1 can be rectified without the influence of the shape of the top surface of the wall part 12 b and the top surface of the wall part 12 c.
  • the area of the region 12 g is equal to the area of the region 12 h.
  • the suction force per unit area occurring in each region can be made equal.
  • the suction force per unit area occurring in each region can be made equal. That is, the suction amount only needs to be made equal in the region 12 g and the region 12 h . As a result, strain-free suction can be performed in each region.
  • the wall part 12 b and the wall part 12 c are provided in the illustrated example. However, another wall part can be further provided inside each of the wall part 12 b and the wall part 12 c.
  • the end surface 12 a 1 of the body part 12 a can be partitioned into three or more regions.
  • the support part 12 d is shaped like a column and provided on the end surface 12 a 1 of the body part 12 a .
  • the height dimension (dimension from the end surface 12 a 1 to the top surface) of the support part 12 d is equal to the height dimension of the wall part 12 b . That is, the wall part 12 b , the wall part 12 c , and the support part 12 d are equal in height dimension.
  • the surface including the top surfaces of the wall part 12 b , the wall part 12 c , and the support part 12 d constitutes a mounting surface of the mounting section 12 .
  • the mounting surface of the mounting section 12 is a flat surface.
  • the mounting surface of the mounting section 12 is not limited to a flat surface, but can be appropriately changed.
  • the mounting surface of the mounting section 12 may be a convex or concave curved surface.
  • the support part 12 d illustrated in FIGS. 2 and 3 is shaped like a cylinder. However, for instance, the support part 12 d may be shaped like a truncated cone, a truncated pyramid, or a sphere.
  • the top surface of the support part 12 d constitutes the mounting surface of the substrate W 1 .
  • the support part 12 d shaped like a truncated cone, a truncated pyramid, or a sphere can reduce the contact area with the substrate W 1 compared with the cylindrical support part. This can suppress e.g. soiling of the substrate W 1 and generation of particles.
  • the area of the top surface of the support part 12 d is small. This can reduce the probability that particles are attached to the top surface of the support part 12 d constituting the mounting surface of the substrate W 1 . This can suppress the decrease of suction performance due to particles.
  • the support part 12 d is provided in a plurality.
  • the dimension between the adjacent support parts 12 d is equal.
  • the plurality of support parts 12 d are equally spaced. If the spacing of the support parts 12 d is too wide, the substrate W 1 may locally bend upon suction of the substrate W 1 .
  • the spacing of the support parts 12 d can be appropriately set by experiment or simulation.
  • the plurality of support parts 12 d can be arranged in e.g. a concentric or zigzag configuration.
  • the hole part 12 e penetrates through the body part 12 a in the thickness direction. One end part of the hole part 12 e is opened at the end surface 12 a 1 in the region 12 g . The other end part of the hole part 12 e is opened at the end surface 12 a 2 and connected to the evacuation section 15 .
  • the hole part 12 f penetrates through the body part 12 a in the thickness direction.
  • One end part of the hole part 12 f is opened at the end surface 12 a 1 in the region 12 h .
  • the other end part of the hole part 12 f is opened at the end surface 12 a 2 and connected to the evacuation section 15 .
  • the diameter dimension of the opening at the end surface 12 a 1 of the hole part 12 e and the hole part 12 f is preferably 1 mm or less.
  • the diameter dimension exceeding 1 mm may locally generate a strain in the substrate W 1 .
  • the neighborhood of the outer periphery of the substrate W 1 protrudes from the body part 12 a.
  • a lift pin or the like can be provided to push up the portion of the substrate W 1 protruding from the body part 12 a.
  • the substrate support section 13 includes a support hook 13 a , a mover 13 b , and a base part 13 c.
  • the support hook 13 a supports the peripheral part of the substrate W 2 .
  • the substrate W 2 is supported at a prescribed position opposed to the substrate W 1 mounted on the mounting section 12 .
  • the mover 13 b moves the support hook 13 a between the position supporting the substrate W 2 and the position retracted outward from the substrate W 2 .
  • the mover 13 b can include a control motor such as a servomotor and a pulse motor.
  • the base part 13 c is shaped like a column and provided on the inner bottom surface of the treatment chamber 11 .
  • the support hook 13 a and the mover 13 b are provided near the end part of the base part 13 c .
  • one base part 13 c is provided for each pair of the support hook 13 a and the mover 13 b .
  • the embodiment is not limited thereto.
  • one base part 13 c can be provided with a plurality of support hooks 13 a and movers 13 b.
  • the number of disposed substrate support sections 13 is not particularly limited. However, preferably, the substrate support sections 13 are evenly disposed at three or more sites of the periphery of the substrate W 2 . This can stabilize the support state of the substrate W 2 .
  • the pressing section 14 includes a mover 14 a , a moving shaft 14 b , and a pad 14 c.
  • the pressing section 14 is provided at a position opposed to the end surface 12 a 1 of the body part 12 a .
  • the pressing section 14 is provided at a position such that the pad 14 c can press a generally central part of the substrate W 2 supported by the support hook 13 a.
  • the pressing section 14 bends the substrate W 2 by using the pad 14 c to press the generally central part of the substrate W 2 supported by the support hook 13 a .
  • part of the lamination surface of the substrate W 1 is brought into contact with part of the lamination surface of the substrate W 2 .
  • the lamination surface of the substrate W 1 and the substrate W 2 refers to the surface of the substrate W 1 and the substrate W 2 opposed to each other.
  • the mover 14 a is provided outside the treatment chamber 11 .
  • the mover 14 a can include a control motor such as a servomotor and a pulse motor.
  • the mover 14 a can include e.g. a mechanism driven by pressure-controlled liquid (such as air cylinder).
  • the moving shaft 14 b is provided through the wall surface of the treatment chamber 11 .
  • One end part side of the moving shaft 14 b is connected to the mover 14 a .
  • the pad 14 c is attached to the other end part side of the moving shaft 14 b.
  • the tip portion of the pad 14 c has a generally hemispherical shape, and the base part of the pad 14 c is shaped like a cylinder.
  • the pad 14 c is formed from a soft elastic body so that the contact portion can be changed from a point contact to a surface contact when being pressed. Thus, the stress can be relaxed at the pressing point (bonding start position). This can suppress damage to the substrate W 2 . Furthermore, this can also suppress e.g. occurrence of voids, occurrence of cracking and chipping, occurrence of scratches, and occurrence of misalignment due to slippage.
  • the pad 14 c can be formed from a soft resin such as silicone rubber and fluororubber. In this case, the pad 14 c formed from silicone rubber or fluororubber can suppress contamination of the substrate W 2 .
  • the pressing section 14 is not necessarily needed, but can be provided as needed.
  • lamination of the substrate W 1 and the substrate W 2 can be performed by the self-weight of the substrate W 2 without pressing the substrate W 2 .
  • suction of the substrate W 1 is deactivated, and the control valve 15 d is controlled so as to introduce outside air toward the rear surface of the substrate W 1 .
  • the substrate W 1 can be deformed convexly so that the substrate W 1 is brought into contact with the substrate W 2 .
  • a pressing section similar to the pressing section 12 is provided inside the mounting section 12 .
  • the rear surface of the substrate W 1 is pressed toward the substrate W 2 . Accordingly, the substrate W 1 can be deformed convexly so that the substrate W 1 is brought into contact with the substrate W 2 .
  • the bonding start position does not necessarily need to be located at the center of the substrate W 1 , but may be located at e.g. the peripheral part of the substrate W 1 .
  • the evacuation section 15 includes an evacuation pump 15 a , a control valve 15 b (corresponding to an example of the first control valve), a piping 15 c , a control valve 15 d (corresponding to an example of the second control valve), and a piping 15 e.
  • the evacuation pump 15 a can be e.g. a dry pump.
  • control valve 15 b One end of the control valve 15 b is connected to the evacuation pump 15 a .
  • the other end of the control valve 15 b is connected to the hole part 12 e through the piping 15 c.
  • control valve 15 d One end of the control valve 15 d is connected to the evacuation pump 15 a .
  • the other end of the control valve 15 d is connected to the hole part 12 f through the piping 15 e.
  • the substrate W 1 mounted on the mounting section 12 defines a space including the region 12 g.
  • the control valve 15 b switches between evacuation of the space including the region 12 g (suction) and stoppage of the evacuation or introduction of outside air (deactivation of suction). That is, the control valve 15 b switches between suction and deactivation of suction of the substrate W 1 in the region 12 g.
  • the “deactivation of suction” in this specification includes not only stoppage of suction (stoppage of evacuation) but also introduction of outside air.
  • the substrate W 1 mounted on the mounting section 12 also defines a space including the region 12 h.
  • the control valve 15 d switches between evacuation of the space including the region 12 h and stoppage of the evacuation or introduction of outside air. That is, the control valve 15 d switches between suction and deactivation of suction of the substrate W 1 in the region 12 h.
  • the control section 16 controls the operation of each component provided in the lamination device 100 .
  • the control section 16 can perform e.g. the following control.
  • the control section 16 controls the control valve 15 b to switch between suction and deactivation of suction of the substrate W 1 in the region 12 g.
  • the control section 16 controls the control valve 15 d to switch between suction and deactivation of suction of the substrate W 1 in the region 12 h.
  • the control section 16 controls start and stoppage of the evacuation pump 15 a.
  • the control section 16 controls the mover 13 b to control the position of the support hook 13 a.
  • the control section 16 controls the mover 14 a to control the position of the pad 14 c.
  • the control section 16 controls the opening and closing operation of the gate 11 b.
  • a substrate W 1 is transported from the opening 11 a into the treatment chamber 11 .
  • the gate 11 b is opened by a driving section, not shown.
  • the substrate W 1 transported into the treatment chamber 11 is mounted on the mounting section 12 , i.e., on the wall part 12 b , the wall part 12 c , and the support part 12 d.
  • the suction stage 101 (the mounting section 12 , the evacuation section 15 , and the control section 16 ) is operated to hold the substrate W 1 on the mounting section 12 .
  • the substrate W 1 has a deformation such as warpage.
  • sucking the substrate W 1 having a deformation such as warpage in one suction operation may locally leave a portion not in close contact with the mounting section 12 , i.e., the deformed portion. Leaving the deformed portion may deteriorate the positional accuracy of lamination of the substrate W 1 and the substrate W 2 .
  • the substrate W 1 is sucked onto the mounting section 12 as follows.
  • suction of the substrate W 1 is performed in one of the region 12 g and the region 12 h , and suction of the substrate W 1 is deactivated in the other of the region 12 g and the region 12 h.
  • suction of the substrate W 1 is performed in the region 12 g , and suction of the substrate W 1 is deactivated in the region 12 h.
  • suction of the substrate W 1 is performed in the region 12 h , and suction of the substrate W 1 is deactivated in the region 12 g.
  • suction of the sucked region is deactivated, and suction of the suction-deactivated region is performed.
  • the substrate W 1 having a deformation such as warpage can be conformed to the shape of the mounting surface of the mounting section 12 . That is, the substrate W 1 having a deformation such as warpage can be rectified to an intended shape (the shape of the mounting surface of the mounting section 12 ). This can improve the positional accuracy of lamination of the substrate W 1 and the substrate W 2 .
  • the suction and deactivation of suction can be repeated a plurality of times.
  • the substrate W 1 having a large deformation such as warpage or the substrate W 1 having a large thickness can be conformed to the shape of the mounting surface of the mounting section 12 .
  • the number of repetition times of the suction and deactivation of suction can be appropriately changed.
  • suction operation can be performed in the region 12 g and the region 12 h to perform suction of the entire surface of the substrate W 1 .
  • the shape of the substrate W 1 can be corrected to some extent in conformity with the mounting section 12 . This can reduce the number of repetition times of the suction and deactivation of suction even in the case where the substrate W 1 has a large amount of deformation.
  • FIG. 4 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 5 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIGS. 4 and 5 illustrate the case of alternately performing the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • the suction of the substrate W 1 is deactivated in the sucked region of the substrate W 1 .
  • suction of the substrate W 1 is deactivated in the other region.
  • FIG. 6 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 7 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIGS. 6 and 7 illustrate the case of alternately performing the operation of suction and deactivation of suction in the region 12 g and the region 12 h , while overlapping the suction operation in the region 12 g and the region 12 h.
  • suction of the suction-deactivated region is performed before deactivating the suction of the sucked region.
  • the substrate W 1 can be conformed to the shape of the mounting surface of the mounting section 12 while reliably holding the substrate W 1 without misalignment.
  • FIG. 8 is a timing chart of the operation of suction and deactivation of suction in the region 12 g and the region 12 h.
  • FIG. 9 is a schematic view for illustrating the operation of suction and deactivation of suction in each time slot.
  • FIGS. 8 and 9 illustrate the case of performing suction in one region, and repeating suction and deactivation of suction in the other region.
  • suction is performed in the region 12 h .
  • Suction and deactivation of suction are repeated in the region 12 g.
  • the region 12 g is opposed to the peripheral portion of the substrate W 1 .
  • the peripheral portion of the substrate W 1 can be deformed in conformity with the shape of the mounting surface of the mounting section 12 .
  • the substrate W 1 can be conformed to the shape of the mounting surface of the mounting section 12 while holding the substrate W 1 in one region.
  • suction is performed in the region 12 g and the region 12 h .
  • the substrate W 1 is sucked onto the mounting surface of the mounting section 12 .
  • a substrate W 2 is transported from the opening 11 a into the treatment chamber 11 .
  • the substrate W 2 is mounted on the support hook 13 a.
  • the substrate W 1 and the substrate W 2 are laminated.
  • the gate 11 b is closed to seal the treatment chamber 11 .
  • the generally central part of the substrate W 2 supported by the support hook 13 a is pressed by the pad 14 c to bend the substrate W 2 .
  • part of the lamination surface of the substrate W 1 is brought into contact with part of the lamination surface of the substrate W 2 .
  • the support hook 13 a is gradually moved in the retraction direction.
  • the contact portion (laminated portion) of the lamination surface of the substrate W 1 and the lamination surface of the substrate W 2 expands from the central part toward the peripheral part.
  • the peripheral part of the substrate W 2 is disengaged from the support hook 13 a , the lamination surface of the substrate W 1 and the lamination surface of the substrate W 2 are brought into contact in the entire surface. That is, the substrate W 1 and the substrate W 2 are laminated to form a laminated substrate.
  • the laminated substrate thus formed is transported to the outside of the treatment chamber 11 by the transport device, not shown.
  • lamination of the substrate W 1 and the substrate W 2 can be continuously performed by repeating the aforementioned procedure as needed.
  • suction and deactivation may be performed alternately a plurality of times for each.
  • the shape, dimension, material, arrangement, number and the like of the components of the lamination device 100 and the suction stage 101 are not limited to those illustrated, but can be appropriately changed.
  • the invention can provide a suction stage, a lamination device, and a method for manufacturing a laminated substrate capable of accurately laminating even deformed substrates, achieving a significant advantage from the industrial viewpoint.

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US15/021,516 2013-09-25 2014-09-24 Suction stage, lamination device, and method for manufacturing laminated substrate Active 2036-01-09 US10586727B2 (en)

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JP2013-198584 2013-09-25
JP2013198584 2013-09-25
PCT/JP2014/075274 WO2015046243A1 (ja) 2013-09-25 2014-09-24 吸着ステージ、貼合装置、および貼合基板の製造方法

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US11710649B2 (en) 2020-03-19 2023-07-25 Kioxia Corporation Bonding apparatus, bonding method, and method for manufacturing semiconductor device

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