TWI910140B - 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Info

Publication number
TWI910140B
TWI910140B TW110110904A TW110110904A TWI910140B TW I910140 B TWI910140 B TW I910140B TW 110110904 A TW110110904 A TW 110110904A TW 110110904 A TW110110904 A TW 110110904A TW I910140 B TWI910140 B TW I910140B
Authority
TW
Taiwan
Prior art keywords
film
substrate
layer
reflective
reflective film
Prior art date
Application number
TW110110904A
Other languages
English (en)
Chinese (zh)
Other versions
TW202141166A (zh
Inventor
鈴木宏太
中川真徳
尾上貴弘
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202141166A publication Critical patent/TW202141166A/zh
Application granted granted Critical
Publication of TWI910140B publication Critical patent/TWI910140B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110110904A 2020-03-30 2021-03-25 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法 TWI910140B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-059743 2020-03-30
JP2020059743 2020-03-30

Publications (2)

Publication Number Publication Date
TW202141166A TW202141166A (zh) 2021-11-01
TWI910140B true TWI910140B (zh) 2026-01-01

Family

ID=77928727

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110110904A TWI910140B (zh) 2020-03-30 2021-03-25 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US12591173B2 (https=)
JP (2) JP7679357B2 (https=)
KR (1) KR20220161261A (https=)
TW (1) TWI910140B (https=)
WO (1) WO2021200325A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
KR102882943B1 (ko) * 2022-04-01 2025-11-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JPWO2023199888A1 (https=) * 2022-04-15 2023-10-19
JPWO2024005038A1 (https=) * 2022-06-28 2024-01-04
US20240045318A1 (en) * 2022-08-03 2024-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet mask with diffusion barrier layer
WO2025142935A1 (ja) * 2023-12-28 2025-07-03 テクセンドフォトマスク株式会社 反射型フォトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103026296A (zh) * 2010-07-27 2013-04-03 旭硝子株式会社 Euv光刻用带反射层的基板和euv光刻用反射型掩模底版
US20190361338A1 (en) * 2017-01-17 2019-11-28 Hoya Corporation Reflective mask blank, reflective mask, method of manufacturing same, and method of manufacturing semiconductor device
TW202004326A (zh) * 2018-05-25 2020-01-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371162B2 (ja) 2000-10-13 2013-12-18 三星電子株式会社 反射型フォトマスク
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP6377361B2 (ja) * 2013-02-11 2018-08-22 Hoya株式会社 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP6408790B2 (ja) * 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US9740091B2 (en) * 2013-07-22 2017-08-22 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device
US9720317B2 (en) 2013-09-11 2017-08-01 Hoya Corporation Substrate with a multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography and method of manufacturing the same, and method of manufacturing a semiconductor device
JP2016033956A (ja) * 2014-07-31 2016-03-10 凸版印刷株式会社 Ｅｕｖマスク欠陥検査方法およびｅｕｖマスクブランク
US10921705B2 (en) * 2015-11-27 2021-02-16 Hoya Corporation Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103026296A (zh) * 2010-07-27 2013-04-03 旭硝子株式会社 Euv光刻用带反射层的基板和euv光刻用反射型掩模底版
US20190361338A1 (en) * 2017-01-17 2019-11-28 Hoya Corporation Reflective mask blank, reflective mask, method of manufacturing same, and method of manufacturing semiconductor device
TW202004326A (zh) * 2018-05-25 2020-01-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法

Also Published As

Publication number Publication date
JP2025105973A (ja) 2025-07-10
US20230133304A1 (en) 2023-05-04
JPWO2021200325A1 (https=) 2021-10-07
KR20220161261A (ko) 2022-12-06
WO2021200325A1 (ja) 2021-10-07
US12591173B2 (en) 2026-03-31
JP7679357B2 (ja) 2025-05-19
TW202141166A (zh) 2021-11-01

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