KR20220161261A - 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20220161261A
KR20220161261A KR1020227025437A KR20227025437A KR20220161261A KR 20220161261 A KR20220161261 A KR 20220161261A KR 1020227025437 A KR1020227025437 A KR 1020227025437A KR 20227025437 A KR20227025437 A KR 20227025437A KR 20220161261 A KR20220161261 A KR 20220161261A
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KR
South Korea
Prior art keywords
film
substrate
multilayer reflective
absorber
reflective film
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Pending
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KR1020227025437A
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English (en)
Korean (ko)
Inventor
고타 스즈키
마사노리 나카가와
다카히로 오노우에
Original Assignee
호야 가부시키가이샤
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Publication of KR20220161261A publication Critical patent/KR20220161261A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020227025437A 2020-03-30 2021-03-22 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법 Pending KR20220161261A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-059743 2020-03-30
JP2020059743 2020-03-30
PCT/JP2021/011620 WO2021200325A1 (ja) 2020-03-30 2021-03-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20220161261A true KR20220161261A (ko) 2022-12-06

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KR1020227025437A Pending KR20220161261A (ko) 2020-03-30 2021-03-22 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US12591173B2 (https=)
JP (2) JP7679357B2 (https=)
KR (1) KR20220161261A (https=)
TW (1) TWI910140B (https=)
WO (1) WO2021200325A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
KR102882943B1 (ko) * 2022-04-01 2025-11-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JPWO2023199888A1 (https=) * 2022-04-15 2023-10-19
JPWO2024005038A1 (https=) * 2022-06-28 2024-01-04
US20240045318A1 (en) * 2022-08-03 2024-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet mask with diffusion barrier layer
WO2025142935A1 (ja) * 2023-12-28 2025-07-03 テクセンドフォトマスク株式会社 反射型フォトマスク

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002122981A (ja) 2000-10-13 2002-04-26 Samsung Electronics Co Ltd 反射型フォトマスク
JP2014170931A (ja) 2013-02-11 2014-09-18 Hoya Corp 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
WO2015012151A1 (ja) 2013-07-22 2015-01-29 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015037564A1 (ja) 2013-09-11 2015-03-19 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
KR20130111524A (ko) * 2010-07-27 2013-10-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사층 형성 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP6408790B2 (ja) * 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2016033956A (ja) * 2014-07-31 2016-03-10 凸版印刷株式会社 Ｅｕｖマスク欠陥検査方法およびｅｕｖマスクブランク
US10921705B2 (en) * 2015-11-27 2021-02-16 Hoya Corporation Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
KR102002441B1 (ko) * 2017-01-17 2019-07-23 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
KR102906466B1 (ko) * 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002122981A (ja) 2000-10-13 2002-04-26 Samsung Electronics Co Ltd 反射型フォトマスク
JP2014170931A (ja) 2013-02-11 2014-09-18 Hoya Corp 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
WO2015012151A1 (ja) 2013-07-22 2015-01-29 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015037564A1 (ja) 2013-09-11 2015-03-19 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
JP2025105973A (ja) 2025-07-10
US20230133304A1 (en) 2023-05-04
JPWO2021200325A1 (https=) 2021-10-07
WO2021200325A1 (ja) 2021-10-07
TWI910140B (zh) 2026-01-01
US12591173B2 (en) 2026-03-31
JP7679357B2 (ja) 2025-05-19
TW202141166A (zh) 2021-11-01

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