JPWO2021200325A1 - - Google Patents

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Publication number
JPWO2021200325A1
JPWO2021200325A1 JP2022511950A JP2022511950A JPWO2021200325A1 JP WO2021200325 A1 JPWO2021200325 A1 JP WO2021200325A1 JP 2022511950 A JP2022511950 A JP 2022511950A JP 2022511950 A JP2022511950 A JP 2022511950A JP WO2021200325 A1 JPWO2021200325 A1 JP WO2021200325A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022511950A
Other languages
Japanese (ja)
Other versions
JPWO2021200325A5 (https=
JP7679357B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of JPWO2021200325A1 publication Critical patent/JPWO2021200325A1/ja
Publication of JPWO2021200325A5 publication Critical patent/JPWO2021200325A5/ja
Priority to JP2025077320A priority Critical patent/JP2025105973A/ja
Application granted granted Critical
Publication of JP7679357B2 publication Critical patent/JP7679357B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022511950A 2020-03-30 2021-03-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Active JP7679357B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025077320A JP2025105973A (ja) 2020-03-30 2025-05-07 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020059743 2020-03-30
JP2020059743 2020-03-30
PCT/JP2021/011620 WO2021200325A1 (ja) 2020-03-30 2021-03-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025077320A Division JP2025105973A (ja) 2020-03-30 2025-05-07 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021200325A1 true JPWO2021200325A1 (https=) 2021-10-07
JPWO2021200325A5 JPWO2021200325A5 (https=) 2024-03-12
JP7679357B2 JP7679357B2 (ja) 2025-05-19

Family

ID=77928727

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022511950A Active JP7679357B2 (ja) 2020-03-30 2021-03-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2025077320A Pending JP2025105973A (ja) 2020-03-30 2025-05-07 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025077320A Pending JP2025105973A (ja) 2020-03-30 2025-05-07 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US12591173B2 (https=)
JP (2) JP7679357B2 (https=)
KR (1) KR20220161261A (https=)
TW (1) TWI910140B (https=)
WO (1) WO2021200325A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
KR102882943B1 (ko) * 2022-04-01 2025-11-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JPWO2023199888A1 (https=) * 2022-04-15 2023-10-19
JPWO2024005038A1 (https=) * 2022-06-28 2024-01-04
US20240045318A1 (en) * 2022-08-03 2024-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet mask with diffusion barrier layer
WO2025142935A1 (ja) * 2023-12-28 2025-07-03 テクセンドフォトマスク株式会社 反射型フォトマスク

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP2014170931A (ja) * 2013-02-11 2014-09-18 Hoya Corp 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2015008283A (ja) * 2013-05-31 2015-01-15 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015012151A1 (ja) * 2013-07-22 2015-01-29 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015037564A1 (ja) * 2013-09-11 2015-03-19 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2016033956A (ja) * 2014-07-31 2016-03-10 凸版印刷株式会社 Ｅｕｖマスク欠陥検査方法およびｅｕｖマスクブランク

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371162B2 (ja) 2000-10-13 2013-12-18 三星電子株式会社 反射型フォトマスク
KR20130111524A (ko) * 2010-07-27 2013-10-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사층 형성 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
US10921705B2 (en) * 2015-11-27 2021-02-16 Hoya Corporation Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
KR102002441B1 (ko) * 2017-01-17 2019-07-23 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
KR102906466B1 (ko) * 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP2014170931A (ja) * 2013-02-11 2014-09-18 Hoya Corp 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2015008283A (ja) * 2013-05-31 2015-01-15 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015012151A1 (ja) * 2013-07-22 2015-01-29 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2015037564A1 (ja) * 2013-09-11 2015-03-19 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2016033956A (ja) * 2014-07-31 2016-03-10 凸版印刷株式会社 Ｅｕｖマスク欠陥検査方法およびｅｕｖマスクブランク

Also Published As

Publication number Publication date
JP2025105973A (ja) 2025-07-10
US20230133304A1 (en) 2023-05-04
KR20220161261A (ko) 2022-12-06
WO2021200325A1 (ja) 2021-10-07
TWI910140B (zh) 2026-01-01
US12591173B2 (en) 2026-03-31
JP7679357B2 (ja) 2025-05-19
TW202141166A (zh) 2021-11-01

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