TWI910139B - 攝像裝置及電子機器 - Google Patents

攝像裝置及電子機器

Info

Publication number
TWI910139B
TWI910139B TW110110643A TW110110643A TWI910139B TW I910139 B TWI910139 B TW I910139B TW 110110643 A TW110110643 A TW 110110643A TW 110110643 A TW110110643 A TW 110110643A TW I910139 B TWI910139 B TW I910139B
Authority
TW
Taiwan
Prior art keywords
aforementioned
semiconductor substrate
light
receiving surface
imaging
Prior art date
Application number
TW110110643A
Other languages
English (en)
Chinese (zh)
Other versions
TW202207484A (zh
Inventor
松本晃
財津光一郎
西田慶次
西田水輝
厳樫一孝
伊藤大介
三好康史
山元純平
田中裕介
浜本寧
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202207484A publication Critical patent/TW202207484A/zh
Application granted granted Critical
Publication of TWI910139B publication Critical patent/TWI910139B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
TW110110643A 2020-03-27 2021-03-24 攝像裝置及電子機器 TWI910139B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-058752 2020-03-27
JP2020058752 2020-03-27
JP2020-217344 2020-12-25
JP2020217344 2020-12-25

Publications (2)

Publication Number Publication Date
TW202207484A TW202207484A (zh) 2022-02-16
TWI910139B true TWI910139B (zh) 2026-01-01

Family

ID=77891971

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110110643A TWI910139B (zh) 2020-03-27 2021-03-24 攝像裝置及電子機器

Country Status (8)

Country Link
US (1) US20230143387A1 (https=)
EP (1) EP4131429A4 (https=)
JP (2) JP7736670B2 (https=)
KR (1) KR102920128B1 (https=)
CN (1) CN115152022A (https=)
DE (1) DE112021001917T5 (https=)
TW (1) TWI910139B (https=)
WO (1) WO2021193915A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021193254A1 (ja) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
US20250120210A1 (en) * 2022-02-08 2025-04-10 Sony Semiconductor Solutions Corporation Solid state imaging device and electronic apparatus
US20230268366A1 (en) * 2022-02-24 2023-08-24 Samsung Electronics Co., Ltd. Image sensor
WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2024014424A (ja) * 2022-07-22 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2024041483A (ja) * 2022-09-14 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
TW202433740A (zh) * 2023-01-20 2024-08-16 日商索尼半導體解決方案公司 半導體裝置
JP2024127099A (ja) * 2023-03-08 2024-09-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP2025024416A (ja) * 2023-08-07 2025-02-20 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2025169614A1 (ja) * 2024-02-09 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014097899A1 (ja) * 2012-12-21 2014-06-26 富士フイルム株式会社 固体撮像装置
CN106449674A (zh) * 2015-08-05 2017-02-22 豪威科技股份有限公司 具有对称多像素相位差检测器的图像传感器及相关方法
CN107408568A (zh) * 2016-01-27 2017-11-28 索尼公司 固态成像元件和电子设备
JP2017212351A (ja) * 2016-05-26 2017-11-30 キヤノン株式会社 撮像装置
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4077577B2 (ja) 1999-04-01 2008-04-16 オリンパス株式会社 撮像素子
JP5422889B2 (ja) 2007-12-27 2014-02-19 株式会社ニコン 固体撮像素子及びこれを用いた撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5743837B2 (ja) 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
WO2018150902A1 (ja) * 2017-02-17 2018-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
US10461109B2 (en) * 2017-11-27 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple deep trench isolation (MDTI) structure for CMOS image sensor
US10998365B2 (en) * 2019-01-30 2021-05-04 Samsung Electronics Co., Ltd. Image sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014097899A1 (ja) * 2012-12-21 2014-06-26 富士フイルム株式会社 固体撮像装置
CN106449674A (zh) * 2015-08-05 2017-02-22 豪威科技股份有限公司 具有对称多像素相位差检测器的图像传感器及相关方法
CN107408568A (zh) * 2016-01-27 2017-11-28 索尼公司 固态成像元件和电子设备
JP2017212351A (ja) * 2016-05-26 2017-11-30 キヤノン株式会社 撮像装置
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器

Also Published As

Publication number Publication date
KR102920128B1 (ko) 2026-01-30
US20230143387A1 (en) 2023-05-11
CN115152022A (zh) 2022-10-04
DE112021001917T5 (de) 2023-02-23
EP4131429A1 (en) 2023-02-08
EP4131429A4 (en) 2023-10-11
JPWO2021193915A1 (https=) 2021-09-30
KR20220159374A (ko) 2022-12-02
JP7736670B2 (ja) 2025-09-09
WO2021193915A1 (ja) 2021-09-30
TW202207484A (zh) 2022-02-16
JP2025172868A (ja) 2025-11-26

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