CN115152022A - 摄像装置和电子设备 - Google Patents

摄像装置和电子设备 Download PDF

Info

Publication number
CN115152022A
CN115152022A CN202180015763.1A CN202180015763A CN115152022A CN 115152022 A CN115152022 A CN 115152022A CN 202180015763 A CN202180015763 A CN 202180015763A CN 115152022 A CN115152022 A CN 115152022A
Authority
CN
China
Prior art keywords
image pickup
semiconductor substrate
present
light receiving
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180015763.1A
Other languages
English (en)
Chinese (zh)
Inventor
松元晃
财津光一郎
西田庆次
西田水辉
厳樫一孝
伊藤大介
三好康史
山元纯平
田中裕介
浜本宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115152022A publication Critical patent/CN115152022A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN202180015763.1A 2020-03-27 2021-03-26 摄像装置和电子设备 Pending CN115152022A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020-058752 2020-03-27
JP2020058752 2020-03-27
JP2020-217344 2020-12-25
JP2020217344 2020-12-25
PCT/JP2021/012841 WO2021193915A1 (ja) 2020-03-27 2021-03-26 撮像装置及び電子機器

Publications (1)

Publication Number Publication Date
CN115152022A true CN115152022A (zh) 2022-10-04

Family

ID=77891971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180015763.1A Pending CN115152022A (zh) 2020-03-27 2021-03-26 摄像装置和电子设备

Country Status (8)

Country Link
US (1) US20230143387A1 (https=)
EP (1) EP4131429A4 (https=)
JP (2) JP7736670B2 (https=)
KR (1) KR102920128B1 (https=)
CN (1) CN115152022A (https=)
DE (1) DE112021001917T5 (https=)
TW (1) TWI910139B (https=)
WO (1) WO2021193915A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021193254A1 (ja) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
US20250120210A1 (en) * 2022-02-08 2025-04-10 Sony Semiconductor Solutions Corporation Solid state imaging device and electronic apparatus
US20230268366A1 (en) * 2022-02-24 2023-08-24 Samsung Electronics Co., Ltd. Image sensor
WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2024014424A (ja) * 2022-07-22 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2024041483A (ja) * 2022-09-14 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
TW202433740A (zh) * 2023-01-20 2024-08-16 日商索尼半導體解決方案公司 半導體裝置
JP2024127099A (ja) * 2023-03-08 2024-09-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP2025024416A (ja) * 2023-08-07 2025-02-20 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2025169614A1 (ja) * 2024-02-09 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4077577B2 (ja) 1999-04-01 2008-04-16 オリンパス株式会社 撮像素子
JP5422889B2 (ja) 2007-12-27 2014-02-19 株式会社ニコン 固体撮像素子及びこれを用いた撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5743837B2 (ja) 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
WO2014097899A1 (ja) * 2012-12-21 2014-06-26 富士フイルム株式会社 固体撮像装置
US9807294B2 (en) * 2015-08-05 2017-10-31 Omnivision Technologies, Inc. Image sensor with symmetric multi-pixel phase-difference detectors, and associated methods
TWI875555B (zh) * 2016-01-27 2025-03-01 日商新力股份有限公司 固體攝像元件
JP6738200B2 (ja) * 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
WO2018150902A1 (ja) * 2017-02-17 2018-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
JP7316764B2 (ja) * 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US10461109B2 (en) * 2017-11-27 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple deep trench isolation (MDTI) structure for CMOS image sensor
US10998365B2 (en) * 2019-01-30 2021-05-04 Samsung Electronics Co., Ltd. Image sensor

Also Published As

Publication number Publication date
KR102920128B1 (ko) 2026-01-30
US20230143387A1 (en) 2023-05-11
DE112021001917T5 (de) 2023-02-23
EP4131429A1 (en) 2023-02-08
EP4131429A4 (en) 2023-10-11
JPWO2021193915A1 (https=) 2021-09-30
KR20220159374A (ko) 2022-12-02
JP7736670B2 (ja) 2025-09-09
TWI910139B (zh) 2026-01-01
WO2021193915A1 (ja) 2021-09-30
TW202207484A (zh) 2022-02-16
JP2025172868A (ja) 2025-11-26

Similar Documents

Publication Publication Date Title
US12211875B2 (en) Imaging element having p-type and n-type solid phase diffusion layers formed in a side wall of an interpixel light shielding wall
US20250098351A1 (en) Solid-state imaging device
JP7736670B2 (ja) 撮像装置及び電子機器
US20250275265A1 (en) Imaging device
JP7620005B2 (ja) 撮像装置及び電子機器
KR102929451B1 (ko) 수광 장치
CN112913024A (zh) 摄像元件和电子设备
US20240379709A1 (en) Light detection device, method of manufacturing light detection device, and electronic equipment
US20250133847A1 (en) Imaging apparatus and electronic device
TW202422862A (zh) 光檢測裝置
WO2022209365A1 (ja) 撮像装置、撮像装置の製造方法、及び、電子機器
US20250056140A1 (en) Solid-state imaging device and electronic equipment
JP7802812B2 (ja) 撮像装置及び電子機器
US20250142999A1 (en) Photodetector and method of manufacturing photodetector
US20250374702A1 (en) Imaging element and electronic device
CN120500925A (zh) 半导体装置
WO2025158884A1 (ja) 半導体装置および電子機器
WO2025197384A1 (ja) 光検出装置及び電子機器
CN121713668A (zh) 摄像装置、电子设备和摄像装置的制造方法
CN121816843A (zh) 光检测装置和电子设备
CN121040240A (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination