JPWO2021193915A1 - - Google Patents
Info
- Publication number
- JPWO2021193915A1 JPWO2021193915A1 JP2022510734A JP2022510734A JPWO2021193915A1 JP WO2021193915 A1 JPWO2021193915 A1 JP WO2021193915A1 JP 2022510734 A JP2022510734 A JP 2022510734A JP 2022510734 A JP2022510734 A JP 2022510734A JP WO2021193915 A1 JPWO2021193915 A1 JP WO2021193915A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025141884A JP2025172868A (ja) | 2020-03-27 | 2025-08-28 | 撮像装置及び電子機器 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020058752 | 2020-03-27 | ||
| JP2020058752 | 2020-03-27 | ||
| JP2020217344 | 2020-12-25 | ||
| JP2020217344 | 2020-12-25 | ||
| PCT/JP2021/012841 WO2021193915A1 (ja) | 2020-03-27 | 2021-03-26 | 撮像装置及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025141884A Division JP2025172868A (ja) | 2020-03-27 | 2025-08-28 | 撮像装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021193915A1 true JPWO2021193915A1 (https=) | 2021-09-30 |
| JP7736670B2 JP7736670B2 (ja) | 2025-09-09 |
Family
ID=77891971
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022510734A Active JP7736670B2 (ja) | 2020-03-27 | 2021-03-26 | 撮像装置及び電子機器 |
| JP2025141884A Pending JP2025172868A (ja) | 2020-03-27 | 2025-08-28 | 撮像装置及び電子機器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025141884A Pending JP2025172868A (ja) | 2020-03-27 | 2025-08-28 | 撮像装置及び電子機器 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230143387A1 (https=) |
| EP (1) | EP4131429A4 (https=) |
| JP (2) | JP7736670B2 (https=) |
| KR (1) | KR102920128B1 (https=) |
| CN (1) | CN115152022A (https=) |
| DE (1) | DE112021001917T5 (https=) |
| TW (1) | TWI910139B (https=) |
| WO (1) | WO2021193915A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021193254A1 (ja) * | 2020-03-27 | 2021-09-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| US20250120210A1 (en) * | 2022-02-08 | 2025-04-10 | Sony Semiconductor Solutions Corporation | Solid state imaging device and electronic apparatus |
| US20230268366A1 (en) * | 2022-02-24 | 2023-08-24 | Samsung Electronics Co., Ltd. | Image sensor |
| WO2023234069A1 (ja) * | 2022-05-30 | 2023-12-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
| JP2024014424A (ja) * | 2022-07-22 | 2024-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2024041483A (ja) * | 2022-09-14 | 2024-03-27 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法、及び電子機器 |
| TW202433740A (zh) * | 2023-01-20 | 2024-08-16 | 日商索尼半導體解決方案公司 | 半導體裝置 |
| JP2024127099A (ja) * | 2023-03-08 | 2024-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
| JP2025024416A (ja) * | 2023-08-07 | 2025-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| WO2025169614A1 (ja) * | 2024-02-09 | 2025-08-14 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158800A (ja) * | 2007-12-27 | 2009-07-16 | Nikon Corp | 固体撮像素子及びこれを用いた撮像装置 |
| JP2013084742A (ja) * | 2011-10-07 | 2013-05-09 | Canon Inc | 光電変換装置および撮像システム |
| JP2017212351A (ja) * | 2016-05-26 | 2017-11-30 | キヤノン株式会社 | 撮像装置 |
| JP2018201015A (ja) * | 2017-05-29 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4077577B2 (ja) | 1999-04-01 | 2008-04-16 | オリンパス株式会社 | 撮像素子 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| WO2014097899A1 (ja) * | 2012-12-21 | 2014-06-26 | 富士フイルム株式会社 | 固体撮像装置 |
| US9807294B2 (en) * | 2015-08-05 | 2017-10-31 | Omnivision Technologies, Inc. | Image sensor with symmetric multi-pixel phase-difference detectors, and associated methods |
| TWI875555B (zh) * | 2016-01-27 | 2025-03-01 | 日商新力股份有限公司 | 固體攝像元件 |
| KR102661391B1 (ko) * | 2016-10-12 | 2024-04-26 | 삼성전자주식회사 | 이미지 센서 |
| WO2018150902A1 (ja) * | 2017-02-17 | 2018-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器 |
| US10461109B2 (en) * | 2017-11-27 | 2019-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple deep trench isolation (MDTI) structure for CMOS image sensor |
| US10998365B2 (en) * | 2019-01-30 | 2021-05-04 | Samsung Electronics Co., Ltd. | Image sensor |
-
2021
- 2021-03-24 TW TW110110643A patent/TWI910139B/zh active
- 2021-03-26 EP EP21774140.4A patent/EP4131429A4/en active Pending
- 2021-03-26 CN CN202180015763.1A patent/CN115152022A/zh active Pending
- 2021-03-26 KR KR1020227032259A patent/KR102920128B1/ko active Active
- 2021-03-26 US US17/910,890 patent/US20230143387A1/en active Pending
- 2021-03-26 DE DE112021001917.1T patent/DE112021001917T5/de active Pending
- 2021-03-26 WO PCT/JP2021/012841 patent/WO2021193915A1/ja not_active Ceased
- 2021-03-26 JP JP2022510734A patent/JP7736670B2/ja active Active
-
2025
- 2025-08-28 JP JP2025141884A patent/JP2025172868A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158800A (ja) * | 2007-12-27 | 2009-07-16 | Nikon Corp | 固体撮像素子及びこれを用いた撮像装置 |
| JP2013084742A (ja) * | 2011-10-07 | 2013-05-09 | Canon Inc | 光電変換装置および撮像システム |
| JP2017212351A (ja) * | 2016-05-26 | 2017-11-30 | キヤノン株式会社 | 撮像装置 |
| JP2018201015A (ja) * | 2017-05-29 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102920128B1 (ko) | 2026-01-30 |
| US20230143387A1 (en) | 2023-05-11 |
| CN115152022A (zh) | 2022-10-04 |
| DE112021001917T5 (de) | 2023-02-23 |
| EP4131429A1 (en) | 2023-02-08 |
| EP4131429A4 (en) | 2023-10-11 |
| KR20220159374A (ko) | 2022-12-02 |
| JP7736670B2 (ja) | 2025-09-09 |
| TWI910139B (zh) | 2026-01-01 |
| WO2021193915A1 (ja) | 2021-09-30 |
| TW202207484A (zh) | 2022-02-16 |
| JP2025172868A (ja) | 2025-11-26 |
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