KR102920128B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기

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Publication number
KR102920128B1
KR102920128B1 KR1020227032259A KR20227032259A KR102920128B1 KR 102920128 B1 KR102920128 B1 KR 102920128B1 KR 1020227032259 A KR1020227032259 A KR 1020227032259A KR 20227032259 A KR20227032259 A KR 20227032259A KR 102920128 B1 KR102920128 B1 KR 102920128B1
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KR
South Korea
Prior art keywords
semiconductor substrate
light
imaging
receiving surface
imaging element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227032259A
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English (en)
Korean (ko)
Other versions
KR20220159374A (ko
Inventor
아키라 마츠모토
코이치로 자이츠
케이지 니시다
미즈키 니시다
카즈타카 이즈카시
다이스케 이토
야스후미 미요시
준페이 야마모토
유스케 타나카
야스시 하마모토
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20220159374A publication Critical patent/KR20220159374A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
KR1020227032259A 2020-03-27 2021-03-26 촬상 장치 및 전자 기기 Active KR102920128B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2020-058752 2020-03-27
JP2020058752 2020-03-27
JP2020217344 2020-12-25
JPJP-P-2020-217344 2020-12-25
PCT/JP2021/012841 WO2021193915A1 (ja) 2020-03-27 2021-03-26 撮像装置及び電子機器

Publications (2)

Publication Number Publication Date
KR20220159374A KR20220159374A (ko) 2022-12-02
KR102920128B1 true KR102920128B1 (ko) 2026-01-30

Family

ID=77891971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227032259A Active KR102920128B1 (ko) 2020-03-27 2021-03-26 촬상 장치 및 전자 기기

Country Status (8)

Country Link
US (1) US20230143387A1 (https=)
EP (1) EP4131429A4 (https=)
JP (2) JP7736670B2 (https=)
KR (1) KR102920128B1 (https=)
CN (1) CN115152022A (https=)
DE (1) DE112021001917T5 (https=)
TW (1) TWI910139B (https=)
WO (1) WO2021193915A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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WO2021193254A1 (ja) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
US20250120210A1 (en) * 2022-02-08 2025-04-10 Sony Semiconductor Solutions Corporation Solid state imaging device and electronic apparatus
US20230268366A1 (en) * 2022-02-24 2023-08-24 Samsung Electronics Co., Ltd. Image sensor
WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2024014424A (ja) * 2022-07-22 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2024041483A (ja) * 2022-09-14 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
TW202433740A (zh) * 2023-01-20 2024-08-16 日商索尼半導體解決方案公司 半導體裝置
JP2024127099A (ja) * 2023-03-08 2024-09-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP2025024416A (ja) * 2023-08-07 2025-02-20 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2025169614A1 (ja) * 2024-02-09 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084742A (ja) 2011-10-07 2013-05-09 Canon Inc 光電変換装置および撮像システム
JP2017212351A (ja) * 2016-05-26 2017-11-30 キヤノン株式会社 撮像装置
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器

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Publication number Priority date Publication date Assignee Title
JP4077577B2 (ja) 1999-04-01 2008-04-16 オリンパス株式会社 撮像素子
JP5422889B2 (ja) 2007-12-27 2014-02-19 株式会社ニコン 固体撮像素子及びこれを用いた撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
WO2014097899A1 (ja) * 2012-12-21 2014-06-26 富士フイルム株式会社 固体撮像装置
US9807294B2 (en) * 2015-08-05 2017-10-31 Omnivision Technologies, Inc. Image sensor with symmetric multi-pixel phase-difference detectors, and associated methods
TWI875555B (zh) * 2016-01-27 2025-03-01 日商新力股份有限公司 固體攝像元件
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
WO2018150902A1 (ja) * 2017-02-17 2018-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
US10461109B2 (en) * 2017-11-27 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple deep trench isolation (MDTI) structure for CMOS image sensor
US10998365B2 (en) * 2019-01-30 2021-05-04 Samsung Electronics Co., Ltd. Image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084742A (ja) 2011-10-07 2013-05-09 Canon Inc 光電変換装置および撮像システム
JP2017212351A (ja) * 2016-05-26 2017-11-30 キヤノン株式会社 撮像装置
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器

Also Published As

Publication number Publication date
US20230143387A1 (en) 2023-05-11
CN115152022A (zh) 2022-10-04
DE112021001917T5 (de) 2023-02-23
EP4131429A1 (en) 2023-02-08
EP4131429A4 (en) 2023-10-11
JPWO2021193915A1 (https=) 2021-09-30
KR20220159374A (ko) 2022-12-02
JP7736670B2 (ja) 2025-09-09
TWI910139B (zh) 2026-01-01
WO2021193915A1 (ja) 2021-09-30
TW202207484A (zh) 2022-02-16
JP2025172868A (ja) 2025-11-26

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