DE112021001917T5 - Bildgebungsvorrichtung und elektronische vorrichtung - Google Patents
Bildgebungsvorrichtung und elektronische vorrichtung Download PDFInfo
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- DE112021001917T5 DE112021001917T5 DE112021001917.1T DE112021001917T DE112021001917T5 DE 112021001917 T5 DE112021001917 T5 DE 112021001917T5 DE 112021001917 T DE112021001917 T DE 112021001917T DE 112021001917 T5 DE112021001917 T5 DE 112021001917T5
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- semiconductor substrate
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- 238000003384 imaging method Methods 0.000 title claims abstract description 539
- 239000000758 substrate Substances 0.000 claims abstract description 375
- 239000004065 semiconductor Substances 0.000 claims abstract description 331
- 238000005192 partition Methods 0.000 claims abstract description 219
- 238000009792 diffusion process Methods 0.000 claims abstract description 142
- 239000012535 impurity Substances 0.000 claims abstract description 66
- 238000006243 chemical reaction Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 29
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 10
- 238000000638 solvent extraction Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 147
- 238000001514 detection method Methods 0.000 description 71
- 238000000034 method Methods 0.000 description 70
- 239000012071 phase Substances 0.000 description 62
- 239000010410 layer Substances 0.000 description 54
- 230000000875 corresponding effect Effects 0.000 description 46
- 238000004891 communication Methods 0.000 description 39
- 238000012545 processing Methods 0.000 description 39
- 238000005516 engineering process Methods 0.000 description 34
- 238000005468 ion implantation Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 30
- 230000006866 deterioration Effects 0.000 description 28
- 230000005540 biological transmission Effects 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- 238000000926 separation method Methods 0.000 description 23
- 230000006870 function Effects 0.000 description 22
- 238000005520 cutting process Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 19
- 238000012546 transfer Methods 0.000 description 18
- 239000004020 conductor Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 17
- 230000007423 decrease Effects 0.000 description 12
- 238000007667 floating Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007790 solid phase Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 230000000149 penetrating effect Effects 0.000 description 9
- 210000001519 tissue Anatomy 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 241000519995 Stachys sylvatica Species 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 208000005646 Pneumoperitoneum Diseases 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 210000004204 blood vessel Anatomy 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MOFVSTNWEDAEEK-UHFFFAOYSA-M indocyanine green Chemical compound [Na+].[O-]S(=O)(=O)CCCCN1C2=CC=C3C=CC=CC3=C2C(C)(C)C1=CC=CC=CC=CC1=[N+](CCCCS([O-])(=O)=O)C2=CC=C(C=CC=C3)C3=C2C1(C)C MOFVSTNWEDAEEK-UHFFFAOYSA-M 0.000 description 2
- 229960004657 indocyanine green Drugs 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 208000032843 Hemorrhage Diseases 0.000 description 1
- 241000530268 Lycaena heteronea Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 Titanoxid Chemical compound 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002073 fluorescence micrograph Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 210000004877 mucosa Anatomy 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920001909 styrene-acrylic polymer Polymers 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-058752 | 2020-03-27 | ||
| JP2020058752 | 2020-03-27 | ||
| JP2020-217344 | 2020-12-25 | ||
| JP2020217344 | 2020-12-25 | ||
| PCT/JP2021/012841 WO2021193915A1 (ja) | 2020-03-27 | 2021-03-26 | 撮像装置及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112021001917T5 true DE112021001917T5 (de) | 2023-02-23 |
Family
ID=77891971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112021001917.1T Pending DE112021001917T5 (de) | 2020-03-27 | 2021-03-26 | Bildgebungsvorrichtung und elektronische vorrichtung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230143387A1 (https=) |
| EP (1) | EP4131429A4 (https=) |
| JP (2) | JP7736670B2 (https=) |
| KR (1) | KR102920128B1 (https=) |
| CN (1) | CN115152022A (https=) |
| DE (1) | DE112021001917T5 (https=) |
| TW (1) | TWI910139B (https=) |
| WO (1) | WO2021193915A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021193254A1 (ja) * | 2020-03-27 | 2021-09-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| US20250120210A1 (en) * | 2022-02-08 | 2025-04-10 | Sony Semiconductor Solutions Corporation | Solid state imaging device and electronic apparatus |
| US20230268366A1 (en) * | 2022-02-24 | 2023-08-24 | Samsung Electronics Co., Ltd. | Image sensor |
| WO2023234069A1 (ja) * | 2022-05-30 | 2023-12-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
| JP2024014424A (ja) * | 2022-07-22 | 2024-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2024041483A (ja) * | 2022-09-14 | 2024-03-27 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法、及び電子機器 |
| TW202433740A (zh) * | 2023-01-20 | 2024-08-16 | 日商索尼半導體解決方案公司 | 半導體裝置 |
| JP2024127099A (ja) * | 2023-03-08 | 2024-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
| JP2025024416A (ja) * | 2023-08-07 | 2025-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| WO2025169614A1 (ja) * | 2024-02-09 | 2025-08-14 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000292685A (ja) | 1999-04-01 | 2000-10-20 | Olympus Optical Co Ltd | 撮像素子 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5422889B2 (ja) | 2007-12-27 | 2014-02-19 | 株式会社ニコン | 固体撮像素子及びこれを用いた撮像装置 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP5743837B2 (ja) | 2011-10-07 | 2015-07-01 | キヤノン株式会社 | 光電変換装置、撮像装置および撮像システム |
| WO2014097899A1 (ja) * | 2012-12-21 | 2014-06-26 | 富士フイルム株式会社 | 固体撮像装置 |
| US9807294B2 (en) * | 2015-08-05 | 2017-10-31 | Omnivision Technologies, Inc. | Image sensor with symmetric multi-pixel phase-difference detectors, and associated methods |
| TWI875555B (zh) * | 2016-01-27 | 2025-03-01 | 日商新力股份有限公司 | 固體攝像元件 |
| JP6738200B2 (ja) * | 2016-05-26 | 2020-08-12 | キヤノン株式会社 | 撮像装置 |
| KR102661391B1 (ko) * | 2016-10-12 | 2024-04-26 | 삼성전자주식회사 | 이미지 센서 |
| WO2018150902A1 (ja) * | 2017-02-17 | 2018-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器 |
| JP7316764B2 (ja) * | 2017-05-29 | 2023-07-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| US10461109B2 (en) * | 2017-11-27 | 2019-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple deep trench isolation (MDTI) structure for CMOS image sensor |
| US10998365B2 (en) * | 2019-01-30 | 2021-05-04 | Samsung Electronics Co., Ltd. | Image sensor |
-
2021
- 2021-03-24 TW TW110110643A patent/TWI910139B/zh active
- 2021-03-26 EP EP21774140.4A patent/EP4131429A4/en active Pending
- 2021-03-26 CN CN202180015763.1A patent/CN115152022A/zh active Pending
- 2021-03-26 KR KR1020227032259A patent/KR102920128B1/ko active Active
- 2021-03-26 US US17/910,890 patent/US20230143387A1/en active Pending
- 2021-03-26 DE DE112021001917.1T patent/DE112021001917T5/de active Pending
- 2021-03-26 WO PCT/JP2021/012841 patent/WO2021193915A1/ja not_active Ceased
- 2021-03-26 JP JP2022510734A patent/JP7736670B2/ja active Active
-
2025
- 2025-08-28 JP JP2025141884A patent/JP2025172868A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000292685A (ja) | 1999-04-01 | 2000-10-20 | Olympus Optical Co Ltd | 撮像素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102920128B1 (ko) | 2026-01-30 |
| US20230143387A1 (en) | 2023-05-11 |
| CN115152022A (zh) | 2022-10-04 |
| EP4131429A1 (en) | 2023-02-08 |
| EP4131429A4 (en) | 2023-10-11 |
| JPWO2021193915A1 (https=) | 2021-09-30 |
| KR20220159374A (ko) | 2022-12-02 |
| JP7736670B2 (ja) | 2025-09-09 |
| TWI910139B (zh) | 2026-01-01 |
| WO2021193915A1 (ja) | 2021-09-30 |
| TW202207484A (zh) | 2022-02-16 |
| JP2025172868A (ja) | 2025-11-26 |
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