TWI900770B - 感放射線性樹脂組成物、抗蝕劑圖案形成方法及化合物 - Google Patents

感放射線性樹脂組成物、抗蝕劑圖案形成方法及化合物

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Publication number
TWI900770B
TWI900770B TW111119259A TW111119259A TWI900770B TW I900770 B TWI900770 B TW I900770B TW 111119259 A TW111119259 A TW 111119259A TW 111119259 A TW111119259 A TW 111119259A TW I900770 B TWI900770 B TW I900770B
Authority
TW
Taiwan
Prior art keywords
group
radiation
resin composition
sensitive resin
atom
Prior art date
Application number
TW111119259A
Other languages
English (en)
Chinese (zh)
Other versions
TW202306951A (zh
Inventor
丸山研
錦織克聡
桐山和也
谷口拓弘
木下奈津子
Original Assignee
日商Ｊｓｒ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202306951A publication Critical patent/TW202306951A/zh
Application granted granted Critical
Publication of TWI900770B publication Critical patent/TWI900770B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/44—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D317/70—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
TW111119259A 2021-06-22 2022-05-24 感放射線性樹脂組成物、抗蝕劑圖案形成方法及化合物 TWI900770B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-103174 2021-06-22
JP2021103174 2021-06-22

Publications (2)

Publication Number Publication Date
TW202306951A TW202306951A (zh) 2023-02-16
TWI900770B true TWI900770B (zh) 2025-10-11

Family

ID=84545601

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111119259A TWI900770B (zh) 2021-06-22 2022-05-24 感放射線性樹脂組成物、抗蝕劑圖案形成方法及化合物

Country Status (4)

Country Link
JP (1) JPWO2022270134A1 (https=)
KR (1) KR20240024053A (https=)
TW (1) TWI900770B (https=)
WO (1) WO2022270134A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4455787A4 (en) * 2021-12-23 2025-05-21 FUJIFILM Corporation Actinic or radiation-sensitive resin composition, actinic or radiation-sensitive film, pattern formation method, manufacturing method for electronic device and interconnection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202041551A (zh) * 2019-04-24 2020-11-16 日商Ｊｓｒ股份有限公司 感放射線性樹脂組成物、抗蝕劑圖案形成方法、感放射線性酸產生劑及化合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5292078B2 (ja) 2008-12-05 2013-09-18 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP6287369B2 (ja) 2013-03-08 2018-03-07 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP6450660B2 (ja) 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7245580B2 (ja) * 2017-09-15 2023-03-24 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7245583B2 (ja) * 2018-05-09 2023-03-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7190966B2 (ja) * 2018-06-06 2022-12-16 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7654364B2 (ja) * 2019-07-29 2025-04-01 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202041551A (zh) * 2019-04-24 2020-11-16 日商Ｊｓｒ股份有限公司 感放射線性樹脂組成物、抗蝕劑圖案形成方法、感放射線性酸產生劑及化合物

Also Published As

Publication number Publication date
WO2022270134A1 (ja) 2022-12-29
TW202306951A (zh) 2023-02-16
KR20240024053A (ko) 2024-02-23
JPWO2022270134A1 (https=) 2022-12-29

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