KR20240024053A - 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물 - Google Patents

감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물 Download PDF

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Publication number
KR20240024053A
KR20240024053A KR1020237040027A KR20237040027A KR20240024053A KR 20240024053 A KR20240024053 A KR 20240024053A KR 1020237040027 A KR1020237040027 A KR 1020237040027A KR 20237040027 A KR20237040027 A KR 20237040027A KR 20240024053 A KR20240024053 A KR 20240024053A
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KR
South Korea
Prior art keywords
group
radiation
resin composition
atom
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237040027A
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English (en)
Korean (ko)
Inventor
켄 마루야마
가츠아키 니시코리
가즈야 기리야마
다쿠히로 다니구치
나츠코 기노시타
Original Assignee
제이에스알 가부시끼가이샤
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Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20240024053A publication Critical patent/KR20240024053A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/44—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D317/70—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
KR1020237040027A 2021-06-22 2022-04-13 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물 Pending KR20240024053A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-103174 2021-06-22
JP2021103174 2021-06-22
PCT/JP2022/017707 WO2022270134A1 (ja) 2021-06-22 2022-04-13 感放射線性樹脂組成物、レジストパターン形成方法及び化合物

Publications (1)

Publication Number Publication Date
KR20240024053A true KR20240024053A (ko) 2024-02-23

Family

ID=84545601

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237040027A Pending KR20240024053A (ko) 2021-06-22 2022-04-13 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물

Country Status (4)

Country Link
JP (1) JPWO2022270134A1 (https=)
KR (1) KR20240024053A (https=)
TW (1) TWI900770B (https=)
WO (1) WO2022270134A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4455787A4 (en) * 2021-12-23 2025-05-21 FUJIFILM Corporation Actinic or radiation-sensitive resin composition, actinic or radiation-sensitive film, pattern formation method, manufacturing method for electronic device and interconnection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7245580B2 (ja) * 2017-09-15 2023-03-24 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7245583B2 (ja) * 2018-05-09 2023-03-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7190966B2 (ja) * 2018-06-06 2022-12-16 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7247732B2 (ja) * 2019-04-24 2023-03-29 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物
JP7654364B2 (ja) * 2019-07-29 2025-04-01 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

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Publication number Publication date
WO2022270134A1 (ja) 2022-12-29
TWI900770B (zh) 2025-10-11
TW202306951A (zh) 2023-02-16
JPWO2022270134A1 (https=) 2022-12-29

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