WO2022270134A1 - 感放射線性樹脂組成物、レジストパターン形成方法及び化合物 - Google Patents

感放射線性樹脂組成物、レジストパターン形成方法及び化合物 Download PDF

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Publication number
WO2022270134A1
WO2022270134A1 PCT/JP2022/017707 JP2022017707W WO2022270134A1 WO 2022270134 A1 WO2022270134 A1 WO 2022270134A1 JP 2022017707 W JP2022017707 W JP 2022017707W WO 2022270134 A1 WO2022270134 A1 WO 2022270134A1
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WIPO (PCT)
Prior art keywords
group
radiation
anion
resin composition
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/017707
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English (en)
French (fr)
Japanese (ja)
Inventor
研 丸山
克聡 錦織
和也 桐山
拓弘 谷口
奈津子 木下
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JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to KR1020237040027A priority Critical patent/KR20240024053A/ko
Priority to JP2023529641A priority patent/JPWO2022270134A1/ja
Publication of WO2022270134A1 publication Critical patent/WO2022270134A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D317/00Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/44Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D317/70Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor

Definitions

  • the lower limit of the polystyrene equivalent weight average molecular weight (Mw) of the polymer measured by gel permeation chromatography (GPC) is preferably 1,000, more preferably 3,000, and even more preferably 5,000.
  • the upper limit of Mw is preferably 50,000, more preferably 30,000, even more preferably 20,000, even more preferably 15,000, and particularly preferably 10,000.
  • the Mw of the polymer can be adjusted, for example, by adjusting the type and amount of the polymerization initiator used in the synthesis.
  • the polymer can be synthesized, for example, by polymerizing monomers that give each structural unit by a known method.
  • R A is a hydrogen atom.
  • R B and R C are each independently a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • R D is a divalent hydrocarbon group having 1 to 20 carbon atoms forming an unsaturated alicyclic structure having 4 to 20 ring members together with the carbon atoms to which R A , R B and R C are respectively bonded.
  • aromatic hydrocarbon group refers to a hydrocarbon group containing an aromatic ring structure as a ring structure. However, it does not need to be composed only of an aromatic ring structure, and may partially contain a chain structure or an alicyclic structure.
  • the monovalent hydrocarbon group having 1 to 20 carbon atoms represented by R X , R Y , R Z , R B , R C , R U , R V or R W is, for example, one having 1 to 20 carbon atoms.
  • Examples thereof include monovalent chain hydrocarbon groups, monovalent alicyclic hydrocarbon groups having 3 to 20 carbon atoms, and monovalent aromatic hydrocarbon groups having 6 to 20 carbon atoms.
  • the hydrophilicity of the resist film can be increased, the solubility in the developer can be appropriately adjusted, and in addition, the resist pattern adheres to the substrate. can improve sexuality. Further, when extreme ultraviolet (EUV) or electron beams are used as the radiation to be irradiated in the exposure step in the resist pattern forming method described later, the sensitivity to the exposure light can be further improved. Therefore, when the [A] polymer has the structural unit (II), the radiation-sensitive resin composition can be particularly preferably used as a radiation-sensitive resin composition for extreme ultraviolet exposure or electron beam exposure. .
  • a sulfonate anion group is preferable as the anion group (b1).
  • the anion part (X-1) is preferable as the anion part (X).
  • b2 is an integer from 0 to 4;
  • R 2 B2 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a nitro group or a halogen atom.
  • the plurality of R 2 B2 are the same or different from each other and are a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a nitro group or a halogen atom, or these groups are combined with each other. It is part of a 4- to 20-membered ring structure composed of the carbon chain to which they are attached.
  • Organic group refers to a group containing at least one carbon atom.
  • heteroatom constituting the monovalent or divalent heteroatom-containing group examples include an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, a halogen atom and the like.
  • Halogen atoms include fluorine, chlorine, bromine and iodine atoms.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
PCT/JP2022/017707 2021-06-22 2022-04-13 感放射線性樹脂組成物、レジストパターン形成方法及び化合物 Ceased WO2022270134A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020237040027A KR20240024053A (ko) 2021-06-22 2022-04-13 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물
JP2023529641A JPWO2022270134A1 (https=) 2021-06-22 2022-04-13

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-103174 2021-06-22
JP2021103174 2021-06-22

Publications (1)

Publication Number Publication Date
WO2022270134A1 true WO2022270134A1 (ja) 2022-12-29

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PCT/JP2022/017707 Ceased WO2022270134A1 (ja) 2021-06-22 2022-04-13 感放射線性樹脂組成物、レジストパターン形成方法及び化合物

Country Status (4)

Country Link
JP (1) JPWO2022270134A1 (https=)
KR (1) KR20240024053A (https=)
TW (1) TWI900770B (https=)
WO (1) WO2022270134A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023120250A1 (ja) * 2021-12-23 2023-06-29 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019052144A (ja) * 2017-09-15 2019-04-04 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2019200417A (ja) * 2018-05-09 2019-11-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2019214551A (ja) * 2018-06-06 2019-12-19 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020181064A (ja) * 2019-04-24 2020-11-05 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物
JP2021020899A (ja) * 2019-07-29 2021-02-18 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5292078B2 (ja) 2008-12-05 2013-09-18 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP6287369B2 (ja) 2013-03-08 2018-03-07 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP6450660B2 (ja) 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019052144A (ja) * 2017-09-15 2019-04-04 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2019200417A (ja) * 2018-05-09 2019-11-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2019214551A (ja) * 2018-06-06 2019-12-19 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020181064A (ja) * 2019-04-24 2020-11-05 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物
JP2021020899A (ja) * 2019-07-29 2021-02-18 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023120250A1 (ja) * 2021-12-23 2023-06-29 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物

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TWI900770B (zh) 2025-10-11
TW202306951A (zh) 2023-02-16
KR20240024053A (ko) 2024-02-23
JPWO2022270134A1 (https=) 2022-12-29

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