TWI896615B - 基板平坦化方法與裝置形成方法 - Google Patents

基板平坦化方法與裝置形成方法

Info

Publication number
TWI896615B
TWI896615B TW110108932A TW110108932A TWI896615B TW I896615 B TWI896615 B TW I896615B TW 110108932 A TW110108932 A TW 110108932A TW 110108932 A TW110108932 A TW 110108932A TW I896615 B TWI896615 B TW I896615B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
metric
pattern
radiation pattern
Prior art date
Application number
TW110108932A
Other languages
English (en)
Chinese (zh)
Other versions
TW202208995A (zh
Inventor
安東尼 Ｒ 舍皮斯
安東 德維利耶
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202208995A publication Critical patent/TW202208995A/zh
Application granted granted Critical
Publication of TWI896615B publication Critical patent/TWI896615B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110108932A 2020-03-17 2021-03-12 基板平坦化方法與裝置形成方法 TWI896615B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202062990823P 2020-03-17 2020-03-17
US62/990,823 2020-03-17
US17/122,898 US11776808B2 (en) 2020-03-17 2020-12-15 Planarization of spin-on films
US17/122,898 2020-12-15

Publications (2)

Publication Number Publication Date
TW202208995A TW202208995A (zh) 2022-03-01
TWI896615B true TWI896615B (zh) 2025-09-11

Family

ID=77748471

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108932A TWI896615B (zh) 2020-03-17 2021-03-12 基板平坦化方法與裝置形成方法

Country Status (6)

Country Link
US (1) US11776808B2 (enExample)
JP (2) JP7812040B2 (enExample)
KR (1) KR102901242B1 (enExample)
CN (1) CN115298805B (enExample)
TW (1) TWI896615B (enExample)
WO (1) WO2021188226A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120266810A1 (en) * 2011-04-20 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization system for high wafer topography
US20160300726A1 (en) * 2015-04-13 2016-10-13 Tokyo Electron Limited System and Method for Planarizing a Substrate
TW201821476A (zh) * 2016-12-05 2018-06-16 美商羅門哈斯電子材料有限公司 用於底層之芳族樹脂

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KR0161467B1 (ko) 1995-11-29 1999-02-01 김광호 반도체장치의 평탄화 방법
US6440638B2 (en) 1998-09-28 2002-08-27 International Business Machines Corp. Method and apparatus for resist planarization
US6645851B1 (en) 2002-09-17 2003-11-11 Taiwan Semiconductor Manufacturing Company Method of forming planarized coatings on contact hole patterns of various duty ratios
US20090008579A1 (en) * 2003-10-07 2009-01-08 Tokyo Electron Limited Electron beam lithography apparatus and design method of patterned beam-defining aperture
US7229745B2 (en) * 2004-06-14 2007-06-12 Bae Systems Information And Electronic Systems Integration Inc. Lithographic semiconductor manufacturing using a multi-layered process
JP2006049684A (ja) * 2004-08-06 2006-02-16 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100612027B1 (ko) * 2005-05-12 2006-08-11 삼성전자주식회사 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법
US7419611B2 (en) * 2005-09-02 2008-09-02 International Business Machines Corporation Processes and materials for step and flash imprint lithography
KR20160083080A (ko) * 2013-11-08 2016-07-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
WO2017087066A1 (en) * 2015-11-20 2017-05-26 Tokyo Electron Limited Methods of forming etch masks for sub-resolution substrate patterning
KR102399364B1 (ko) * 2016-10-04 2022-05-18 도쿄엘렉트론가부시키가이샤 기판 제조 동안의 피처 토포그래피에 대한 스핀 코트 평탄화의 용이화
US10991594B2 (en) * 2018-06-22 2021-04-27 Tokyo Electron Limited Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces
US20200328102A1 (en) 2019-04-15 2020-10-15 Tokyo Electron Limited Method for die-level unique authentication and serialization of semiconductor devices
US20210294148A1 (en) * 2020-03-17 2021-09-23 Tokyo Electron Limited Planarizing Organic Films
US11455436B2 (en) * 2020-03-25 2022-09-27 Tokyo Electron Limited Predicting across wafer spin-on planarization over a patterned topography
US11656550B2 (en) * 2020-09-01 2023-05-23 Tokyo Electron Limited Controlling semiconductor film thickness

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120266810A1 (en) * 2011-04-20 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization system for high wafer topography
US20160300726A1 (en) * 2015-04-13 2016-10-13 Tokyo Electron Limited System and Method for Planarizing a Substrate
TW201821476A (zh) * 2016-12-05 2018-06-16 美商羅門哈斯電子材料有限公司 用於底層之芳族樹脂

Also Published As

Publication number Publication date
WO2021188226A1 (en) 2021-09-23
CN115298805B (zh) 2026-07-24
US11776808B2 (en) 2023-10-03
CN115298805A (zh) 2022-11-04
KR102901242B1 (ko) 2025-12-16
US20210296121A1 (en) 2021-09-23
JP2023517747A (ja) 2023-04-26
TW202208995A (zh) 2022-03-01
KR20220154724A (ko) 2022-11-22
JP2025159084A (ja) 2025-10-17
JP7812040B2 (ja) 2026-02-09

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