CN115298805B - 旋涂薄膜的平坦化 - Google Patents
旋涂薄膜的平坦化Info
- Publication number
- CN115298805B CN115298805B CN202180021194.1A CN202180021194A CN115298805B CN 115298805 B CN115298805 B CN 115298805B CN 202180021194 A CN202180021194 A CN 202180021194A CN 115298805 B CN115298805 B CN 115298805B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- topography
- pattern
- device features
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/08—Planarisation of organic insulating materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062990823P | 2020-03-17 | 2020-03-17 | |
| US62/990,823 | 2020-03-17 | ||
| US17/122,898 US11776808B2 (en) | 2020-03-17 | 2020-12-15 | Planarization of spin-on films |
| US17/122,898 | 2020-12-15 | ||
| PCT/US2021/017165 WO2021188226A1 (en) | 2020-03-17 | 2021-02-09 | Planarization of spin-on films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115298805A CN115298805A (zh) | 2022-11-04 |
| CN115298805B true CN115298805B (zh) | 2026-07-24 |
Family
ID=77748471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180021194.1A Active CN115298805B (zh) | 2020-03-17 | 2021-02-09 | 旋涂薄膜的平坦化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11776808B2 (enExample) |
| JP (2) | JP7812040B2 (enExample) |
| KR (1) | KR102901242B1 (enExample) |
| CN (1) | CN115298805B (enExample) |
| TW (1) | TWI896615B (enExample) |
| WO (1) | WO2021188226A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114744065B (zh) * | 2022-03-23 | 2024-06-14 | 中国电子科技集团公司第十一研究所 | 台面结构芯片的非接触式光刻方法 |
| US12325046B2 (en) * | 2022-06-28 | 2025-06-10 | Canon Kabushiki Kaisha | Superstrate including a body and layers and methods of forming and using the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0161467B1 (ko) | 1995-11-29 | 1999-02-01 | 김광호 | 반도체장치의 평탄화 방법 |
| US6440638B2 (en) | 1998-09-28 | 2002-08-27 | International Business Machines Corp. | Method and apparatus for resist planarization |
| US6645851B1 (en) | 2002-09-17 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Method of forming planarized coatings on contact hole patterns of various duty ratios |
| US20090008579A1 (en) * | 2003-10-07 | 2009-01-08 | Tokyo Electron Limited | Electron beam lithography apparatus and design method of patterned beam-defining aperture |
| US7229745B2 (en) * | 2004-06-14 | 2007-06-12 | Bae Systems Information And Electronic Systems Integration Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
| JP2006049684A (ja) * | 2004-08-06 | 2006-02-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| KR100612027B1 (ko) * | 2005-05-12 | 2006-08-11 | 삼성전자주식회사 | 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법 |
| US7419611B2 (en) * | 2005-09-02 | 2008-09-02 | International Business Machines Corporation | Processes and materials for step and flash imprint lithography |
| US20120266810A1 (en) * | 2011-04-20 | 2012-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Planarization system for high wafer topography |
| KR20160083080A (ko) * | 2013-11-08 | 2016-07-11 | 도쿄엘렉트론가부시키가이샤 | 화학적 폴리싱 및 평탄화를 위한 방법 |
| JP6893613B2 (ja) | 2015-04-13 | 2021-06-23 | 東京エレクトロン株式会社 | 基板を平坦化するためのシステム及び方法 |
| WO2017087066A1 (en) * | 2015-11-20 | 2017-05-26 | Tokyo Electron Limited | Methods of forming etch masks for sub-resolution substrate patterning |
| KR102399364B1 (ko) * | 2016-10-04 | 2022-05-18 | 도쿄엘렉트론가부시키가이샤 | 기판 제조 동안의 피처 토포그래피에 대한 스핀 코트 평탄화의 용이화 |
| US10790146B2 (en) * | 2016-12-05 | 2020-09-29 | Rohm And Haas Electronic Materials Llc | Aromatic resins for underlayers |
| US10991594B2 (en) * | 2018-06-22 | 2021-04-27 | Tokyo Electron Limited | Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces |
| US20200328102A1 (en) | 2019-04-15 | 2020-10-15 | Tokyo Electron Limited | Method for die-level unique authentication and serialization of semiconductor devices |
| US20210294148A1 (en) * | 2020-03-17 | 2021-09-23 | Tokyo Electron Limited | Planarizing Organic Films |
| US11455436B2 (en) * | 2020-03-25 | 2022-09-27 | Tokyo Electron Limited | Predicting across wafer spin-on planarization over a patterned topography |
| US11656550B2 (en) * | 2020-09-01 | 2023-05-23 | Tokyo Electron Limited | Controlling semiconductor film thickness |
-
2020
- 2020-12-15 US US17/122,898 patent/US11776808B2/en active Active
-
2021
- 2021-02-09 KR KR1020227035158A patent/KR102901242B1/ko active Active
- 2021-02-09 CN CN202180021194.1A patent/CN115298805B/zh active Active
- 2021-02-09 JP JP2022555939A patent/JP7812040B2/ja active Active
- 2021-02-09 WO PCT/US2021/017165 patent/WO2021188226A1/en not_active Ceased
- 2021-03-12 TW TW110108932A patent/TWI896615B/zh active
-
2025
- 2025-08-08 JP JP2025133001A patent/JP2025159084A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021188226A1 (en) | 2021-09-23 |
| US11776808B2 (en) | 2023-10-03 |
| CN115298805A (zh) | 2022-11-04 |
| KR102901242B1 (ko) | 2025-12-16 |
| US20210296121A1 (en) | 2021-09-23 |
| TWI896615B (zh) | 2025-09-11 |
| JP2023517747A (ja) | 2023-04-26 |
| TW202208995A (zh) | 2022-03-01 |
| KR20220154724A (ko) | 2022-11-22 |
| JP2025159084A (ja) | 2025-10-17 |
| JP7812040B2 (ja) | 2026-02-09 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |