CN115298805B - 旋涂薄膜的平坦化 - Google Patents

旋涂薄膜的平坦化

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Publication number
CN115298805B
CN115298805B CN202180021194.1A CN202180021194A CN115298805B CN 115298805 B CN115298805 B CN 115298805B CN 202180021194 A CN202180021194 A CN 202180021194A CN 115298805 B CN115298805 B CN 115298805B
Authority
CN
China
Prior art keywords
layer
substrate
topography
pattern
device features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180021194.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN115298805A (zh
Inventor
安东尼·R·舍皮斯
安东·德维利耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115298805A publication Critical patent/CN115298805A/zh
Application granted granted Critical
Publication of CN115298805B publication Critical patent/CN115298805B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202180021194.1A 2020-03-17 2021-02-09 旋涂薄膜的平坦化 Active CN115298805B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202062990823P 2020-03-17 2020-03-17
US62/990,823 2020-03-17
US17/122,898 US11776808B2 (en) 2020-03-17 2020-12-15 Planarization of spin-on films
US17/122,898 2020-12-15
PCT/US2021/017165 WO2021188226A1 (en) 2020-03-17 2021-02-09 Planarization of spin-on films

Publications (2)

Publication Number Publication Date
CN115298805A CN115298805A (zh) 2022-11-04
CN115298805B true CN115298805B (zh) 2026-07-24

Family

ID=77748471

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180021194.1A Active CN115298805B (zh) 2020-03-17 2021-02-09 旋涂薄膜的平坦化

Country Status (6)

Country Link
US (1) US11776808B2 (enExample)
JP (2) JP7812040B2 (enExample)
KR (1) KR102901242B1 (enExample)
CN (1) CN115298805B (enExample)
TW (1) TWI896615B (enExample)
WO (1) WO2021188226A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0161467B1 (ko) 1995-11-29 1999-02-01 김광호 반도체장치의 평탄화 방법
US6440638B2 (en) 1998-09-28 2002-08-27 International Business Machines Corp. Method and apparatus for resist planarization
US6645851B1 (en) 2002-09-17 2003-11-11 Taiwan Semiconductor Manufacturing Company Method of forming planarized coatings on contact hole patterns of various duty ratios
US20090008579A1 (en) * 2003-10-07 2009-01-08 Tokyo Electron Limited Electron beam lithography apparatus and design method of patterned beam-defining aperture
US7229745B2 (en) * 2004-06-14 2007-06-12 Bae Systems Information And Electronic Systems Integration Inc. Lithographic semiconductor manufacturing using a multi-layered process
JP2006049684A (ja) * 2004-08-06 2006-02-16 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100612027B1 (ko) * 2005-05-12 2006-08-11 삼성전자주식회사 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법
US7419611B2 (en) * 2005-09-02 2008-09-02 International Business Machines Corporation Processes and materials for step and flash imprint lithography
US20120266810A1 (en) * 2011-04-20 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization system for high wafer topography
KR20160083080A (ko) * 2013-11-08 2016-07-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
JP6893613B2 (ja) 2015-04-13 2021-06-23 東京エレクトロン株式会社 基板を平坦化するためのシステム及び方法
WO2017087066A1 (en) * 2015-11-20 2017-05-26 Tokyo Electron Limited Methods of forming etch masks for sub-resolution substrate patterning
KR102399364B1 (ko) * 2016-10-04 2022-05-18 도쿄엘렉트론가부시키가이샤 기판 제조 동안의 피처 토포그래피에 대한 스핀 코트 평탄화의 용이화
US10790146B2 (en) * 2016-12-05 2020-09-29 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
US10991594B2 (en) * 2018-06-22 2021-04-27 Tokyo Electron Limited Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces
US20200328102A1 (en) 2019-04-15 2020-10-15 Tokyo Electron Limited Method for die-level unique authentication and serialization of semiconductor devices
US20210294148A1 (en) * 2020-03-17 2021-09-23 Tokyo Electron Limited Planarizing Organic Films
US11455436B2 (en) * 2020-03-25 2022-09-27 Tokyo Electron Limited Predicting across wafer spin-on planarization over a patterned topography
US11656550B2 (en) * 2020-09-01 2023-05-23 Tokyo Electron Limited Controlling semiconductor film thickness

Also Published As

Publication number Publication date
WO2021188226A1 (en) 2021-09-23
US11776808B2 (en) 2023-10-03
CN115298805A (zh) 2022-11-04
KR102901242B1 (ko) 2025-12-16
US20210296121A1 (en) 2021-09-23
TWI896615B (zh) 2025-09-11
JP2023517747A (ja) 2023-04-26
TW202208995A (zh) 2022-03-01
KR20220154724A (ko) 2022-11-22
JP2025159084A (ja) 2025-10-17
JP7812040B2 (ja) 2026-02-09

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