KR100612027B1 - 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법 - Google Patents
가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법 Download PDFInfo
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- KR100612027B1 KR100612027B1 KR1020050039712A KR20050039712A KR100612027B1 KR 100612027 B1 KR100612027 B1 KR 100612027B1 KR 1020050039712 A KR1020050039712 A KR 1020050039712A KR 20050039712 A KR20050039712 A KR 20050039712A KR 100612027 B1 KR100612027 B1 KR 100612027B1
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- crosslinked polymer
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- 229920006037 cross link polymer Polymers 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 238000000059 patterning Methods 0.000 claims abstract description 21
- 229920000642 polymer Polymers 0.000 claims abstract description 15
- 239000002243 precursor Substances 0.000 claims abstract description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000000178 monomer Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012952 cationic photoinitiator Substances 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- ZOMPBXWFMAJRRU-UHFFFAOYSA-N 3-ethyloxiran-2-one Chemical compound CCC1OC1=O ZOMPBXWFMAJRRU-UHFFFAOYSA-N 0.000 claims description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 2
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 claims description 2
- 229940106691 bisphenol a Drugs 0.000 claims description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002496 iodine Chemical class 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium group Chemical group [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 48
- 229920003986 novolac Polymers 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- DHMQDGOQFOQNFH-UHFFFAOYSA-M Aminoacetate Chemical compound NCC([O-])=O DHMQDGOQFOQNFH-UHFFFAOYSA-M 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 194
- 238000011161 development Methods 0.000 description 9
- -1 EPON 1001F Chemical compound 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- 125000001033 ether group Chemical group 0.000 description 4
- 150000003949 imides Chemical class 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- MBAKFIZHTUAVJN-UHFFFAOYSA-I hexafluoroantimony(1-);hydron Chemical compound F.F[Sb](F)(F)(F)F MBAKFIZHTUAVJN-UHFFFAOYSA-I 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- RBPHOYXWXDXPCX-UHFFFAOYSA-N butyl(phenyl)iodanium Chemical compound CCCC[I+]C1=CC=CC=C1 RBPHOYXWXDXPCX-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-O diphenylsulfanium Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-O 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
Abstract
Description
Claims (9)
- (가) 기판 상에 잉크를 가열하기 위한 히터와 상기 히터에 전류를 공급하기 위한 전극을 형성하는 단계;(나) 상기 히터와 전극이 형성된 상기 기판 상에 가교 폴리머 레지스트 조성물을 패터닝하여 유로형성층을 형성하는 단계;(다) 상기 유로형성층이 형성되어 있는 상기 기판 상에 포토리소그라피에 의한 패터닝을 2회 이상 수행하여, 상기 유로형성층에 의해 둘러싸인 공간 내에 상면이 평탄한 희생층을 형성하는 단계;(라) 상기 유로형성층과 희생층 위에 가교 폴리머 레지스트 조성물을 패터닝하여 노즐층을 형성하는 단계;(마) 상기 기판의 배면으로부터 상기 기판을 관통되도록 식각하여 잉크공급구를 형성하는 단계; 및(바) 상기 희생층을 제거하는 단계;를 구비하는 잉크젯 프린트헤드의 제조방법에 있어서,상기 가교 폴리머 레지스트 조성물은 단량체 반복 단위 상에 글리시딜 에테르 관능기를 갖는 페놀 노블락 수지인 전구체 폴리머를 포함하는 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 1항에 있어서,상기 가교 폴리머 레지스트 조성물은 전구체 폴리머, 양이온성 광개시제, 및 용매를 포함하는 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 1항에 있어서,상기 전구체 폴리머는 페놀, ο-크레졸, ρ-크레졸, 비스페놀-A, 시클로지방족, 및 이들의 혼합물로 이루어지는 군으로부터 선택된 골격 단량체로부터 형성되는 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 1항에 있어서,상기 가교 폴리머 레지스트 조성물은 상기 전구체 폴리머를 활성선에 노광시킴으로써 가교되는 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 2항에 있어서,상기 양이온성 광개시제는 술포늄 염 또는 요오드 염인 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 2항에 있어서,상기 용매는 α-부티로락톤, 프로필렌 글리콜 메틸 에틸 아세테이트(PGMEA), 테트라히드로퓨란(THF), 메틸 에틸 케톤, 메틸 이소부틸 케톤, 시클로펜타논, 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는 잉크젯 프린트헤드의 제조방법.
- 제 1항 내지 제 7항 중 어느 한 항에 의하여 제조된 잉크젯 프린트헤드.
- 제 8항에 있어서,챔버층과 희생층 사이의 단차가 3㎛ 미만인 것을 특징으로 하는 잉크젯 프린트헤드.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050039712A KR100612027B1 (ko) | 2005-05-12 | 2005-05-12 | 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법 |
US11/415,198 US20060262157A1 (en) | 2005-05-12 | 2006-05-02 | Method of manufacturing inkjet printhead using crosslinked polymer |
JP2006134496A JP2006315402A (ja) | 2005-05-12 | 2006-05-12 | インクジェットプリントヘッドの製造方法、インクジェットプリントヘッドおよびインクジェットプリントヘッドの中間体 |
US11/772,541 US20070256301A1 (en) | 2005-05-12 | 2007-07-02 | Method of manufacturing inkjet printhead using crosslinked polymer |
Applications Claiming Priority (1)
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Cited By (1)
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KR100657334B1 (ko) * | 2005-09-13 | 2006-12-14 | 삼성전자주식회사 | 잉크젯 프린터 헤드의 제조 방법 및 상기 방법에 의하여제조된 잉크젯 프린터 헤드 |
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KR20090117010A (ko) * | 2008-05-08 | 2009-11-12 | 삼성전자주식회사 | 잉크젯 프린터 헤드의 제조 방법 및 상기 방법에 의하여제조된 잉크젯 프린터 헤드 |
KR101522552B1 (ko) * | 2008-11-03 | 2015-05-26 | 삼성전자주식회사 | 잉크젯 프린트헤드 및 그 제조방법 |
KR20100060423A (ko) * | 2008-11-27 | 2010-06-07 | 삼성전자주식회사 | 잉크젯 프린트헤드 및 그 제조방법 |
JP4942218B2 (ja) * | 2008-12-16 | 2012-05-30 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
CN105377747B (zh) * | 2013-07-24 | 2017-12-08 | Jsr株式会社 | 微流体装置及其制造方法、流路形成用感光性树脂组合物 |
JP6626258B2 (ja) * | 2014-04-07 | 2019-12-25 | 昭和電工パッケージング株式会社 | ラミネート外装材の製造方法 |
CN105731363A (zh) * | 2016-02-25 | 2016-07-06 | 西安工业大学 | 制作超光滑聚合物表面的制备方法及其装置 |
US11776808B2 (en) * | 2020-03-17 | 2023-10-03 | Tokyo Electron Limited | Planarization of spin-on films |
CN111741423B (zh) * | 2020-08-21 | 2020-11-20 | 中芯集成电路制造(绍兴)有限公司 | Mems麦克风的制造方法 |
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KR100612027B1 (ko) * | 2005-05-12 | 2006-08-11 | 삼성전자주식회사 | 가교 폴리머를 이용한 잉크젯 프린트헤드의 제조방법 |
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- 2005-05-12 KR KR1020050039712A patent/KR100612027B1/ko active IP Right Grant
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- 2006-05-02 US US11/415,198 patent/US20060262157A1/en not_active Abandoned
- 2006-05-12 JP JP2006134496A patent/JP2006315402A/ja not_active Withdrawn
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KR100522603B1 (ko) * | 2003-05-16 | 2005-10-20 | 삼성전자주식회사 | 모놀리틱 잉크젯 프린트헤드 및 그 제조방법 |
KR100517515B1 (ko) | 2004-01-20 | 2005-09-28 | 삼성전자주식회사 | 모놀리틱 잉크젯 프린트헤드의 제조방법 |
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KR101422203B1 (ko) * | 2007-08-07 | 2014-07-30 | 삼성전자주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴 형성 방법 및 잉크젯 프린트 헤드 |
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US20070256301A1 (en) | 2007-11-08 |
JP2006315402A (ja) | 2006-11-24 |
US20060262157A1 (en) | 2006-11-23 |
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