TWI893104B - 具反射元件之發光二極體晶片結構 - Google Patents

具反射元件之發光二極體晶片結構

Info

Publication number
TWI893104B
TWI893104B TW110114256A TW110114256A TWI893104B TW I893104 B TWI893104 B TW I893104B TW 110114256 A TW110114256 A TW 110114256A TW 110114256 A TW110114256 A TW 110114256A TW I893104 B TWI893104 B TW I893104B
Authority
TW
Taiwan
Prior art keywords
isolation portion
chip structure
light
mesa
emitting diode
Prior art date
Application number
TW110114256A
Other languages
English (en)
Chinese (zh)
Other versions
TW202147645A (zh
Inventor
李起鳴
Original Assignee
中國大陸商上海顯耀顯示科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中國大陸商上海顯耀顯示科技有限公司 filed Critical 中國大陸商上海顯耀顯示科技有限公司
Publication of TW202147645A publication Critical patent/TW202147645A/zh
Application granted granted Critical
Publication of TWI893104B publication Critical patent/TWI893104B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW110114256A 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構 TWI893104B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063013358P 2020-04-21 2020-04-21
US63/013,358 2020-04-21

Publications (2)

Publication Number Publication Date
TW202147645A TW202147645A (zh) 2021-12-16
TWI893104B true TWI893104B (zh) 2025-08-11

Family

ID=78082779

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110114256A TWI893104B (zh) 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構
TW114125481A TW202543464A (zh) 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW114125481A TW202543464A (zh) 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構

Country Status (9)

Country Link
US (1) US11804582B2 (https=)
EP (1) EP4139956A4 (https=)
JP (1) JP2023525648A (https=)
KR (1) KR20230003506A (https=)
CN (2) CN121127012A (https=)
AU (1) AU2021261321A1 (https=)
DE (1) DE21792139T1 (https=)
TW (2) TWI893104B (https=)
WO (1) WO2021216684A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240141202A (ko) * 2022-01-31 2024-09-25 제이드 버드 디스플레이(상하이) 리미티드 마이크로 led, 마이크로 led 어레이 패널 및 그의 제조 방법
US12300774B2 (en) * 2022-02-25 2025-05-13 Meta Platforms Technologies, Llc Microdisplay architecture with light extraction efficiency enhancement
CN115171530B (zh) * 2022-06-30 2024-07-05 上海天马微电子有限公司 一种显示装置
JP2025530533A (ja) 2023-01-10 2025-09-11 エルジー エナジー ソリューション リミテッド 電極乾燥設備およびそれを含む電極乾燥システム
FR3154230A1 (fr) 2023-10-11 2025-04-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoélectronique à extraction lumineuse améliorée
WO2025217788A1 (en) * 2024-04-16 2025-10-23 Jade Bird Display (shanghai) Limited Micro led array and micro led display panel
FR3164871A1 (fr) 2024-07-19 2026-01-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoélectronique à extraction lumineuse améliorée
WO2026038906A1 (ko) * 2024-08-16 2026-02-19 삼성전자 주식회사 접지를 포함하는 전자장치
TWI895124B (zh) * 2024-09-26 2025-08-21 友達光電股份有限公司 顯示裝置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110297914A1 (en) * 2010-06-07 2011-12-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof
US20150333221A1 (en) * 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US20170133357A1 (en) * 2015-11-05 2017-05-11 Innolux Corporation Display device
US20170179097A1 (en) * 2015-12-21 2017-06-22 Hong Kong Beida Jade Bird Display Limited Making Semiconductor Devices with Alignment Bonding and Substrate Removal
US20180090058A1 (en) * 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro Display Panels With Integrated Micro-Reflectors
TW201924094A (zh) * 2017-10-19 2019-06-16 美商亮銳公司 發光元件封裝
US20190198709A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions
WO2020069467A1 (en) * 2018-09-27 2020-04-02 Lumileds Holding B.V. Micro light emitting devices

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4837295B2 (ja) 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
US7928462B2 (en) * 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
TW200834962A (en) 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
JP4985067B2 (ja) * 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
EP2375452A1 (en) * 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Nanoparticle antireflection layer
US20110284887A1 (en) * 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
JP2012124248A (ja) * 2010-12-07 2012-06-28 Toppan Printing Co Ltd Ｌｅｄチップ搭載用リードフレーム基板及びその製造方法並びにｌｅｄパッケージ
JP2012174810A (ja) * 2011-02-18 2012-09-10 Fuji Xerox Co Ltd 発光部品、プリントヘッドおよび画像形成装置
JP2013109907A (ja) * 2011-11-18 2013-06-06 Sharp Corp 蛍光体基板および表示装置
WO2013141032A1 (ja) * 2012-03-23 2013-09-26 シャープ株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光装置及び基板
WO2013161146A1 (ja) * 2012-04-26 2013-10-31 シャープ株式会社 半導体装置の製造方法
JP5971552B2 (ja) * 2012-05-01 2016-08-17 大日本印刷株式会社 Ｌｅｄ素子搭載用リードフレーム、樹脂付リードフレーム、多面付ｌｅｄパッケージ、ｌｅｄパッケージの製造方法および半導体素子搭載用リードフレーム
KR20150103661A (ko) * 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
US9178123B2 (en) * 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
JP2014216588A (ja) * 2013-04-30 2014-11-17 株式会社沖データ 発光装置、その製造方法、画像表示装置、及び画像形成装置
TWI467528B (zh) * 2013-10-30 2015-01-01 友達光電股份有限公司 發光二極體顯示面板及其製作方法
KR102285786B1 (ko) * 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
WO2016043113A1 (ja) 2014-09-16 2016-03-24 シャープ株式会社 有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンス装置の製造方法
JP6606517B2 (ja) * 2015-02-13 2019-11-13 シチズン電子株式会社 発光装置の製造方法
KR102465382B1 (ko) * 2015-08-31 2022-11-10 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
US10079264B2 (en) 2015-12-21 2018-09-18 Hong Kong Beida Jade Bird Display Limited Semiconductor devices with integrated thin-film transistor circuitry
KR20170108321A (ko) * 2016-03-17 2017-09-27 주식회사 루멘스 발광 다이오드
CN111052412B (zh) * 2017-08-25 2023-07-25 夏普株式会社 微型led元件、图像显示元件以及制造方法
KR102295780B1 (ko) * 2017-08-31 2021-09-01 도시바 마테리알 가부시키가이샤 반도체 발광 소자 및 그의 제조 방법
US10361349B2 (en) * 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
KR102652645B1 (ko) * 2018-09-03 2024-04-02 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
KR102852286B1 (ko) * 2019-09-24 2025-08-28 삼성전자주식회사 디스플레이 장치
US11817435B2 (en) 2019-10-28 2023-11-14 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110297914A1 (en) * 2010-06-07 2011-12-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof
US20150333221A1 (en) * 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US20170133357A1 (en) * 2015-11-05 2017-05-11 Innolux Corporation Display device
US20170179097A1 (en) * 2015-12-21 2017-06-22 Hong Kong Beida Jade Bird Display Limited Making Semiconductor Devices with Alignment Bonding and Substrate Removal
US20180090058A1 (en) * 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro Display Panels With Integrated Micro-Reflectors
TW201924094A (zh) * 2017-10-19 2019-06-16 美商亮銳公司 發光元件封裝
US20190198709A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions
WO2020069467A1 (en) * 2018-09-27 2020-04-02 Lumileds Holding B.V. Micro light emitting devices

Also Published As

Publication number Publication date
WO2021216684A1 (en) 2021-10-28
CN115413372A (zh) 2022-11-29
EP4139956A4 (en) 2024-07-17
KR20230003506A (ko) 2023-01-06
JP2023525648A (ja) 2023-06-19
CN121127012A (zh) 2025-12-12
EP4139956A1 (en) 2023-03-01
TW202543464A (zh) 2025-11-01
US20210328116A1 (en) 2021-10-21
DE21792139T1 (de) 2023-06-22
TW202147645A (zh) 2021-12-16
AU2021261321A1 (en) 2022-12-08
US11804582B2 (en) 2023-10-31

Similar Documents

Publication Publication Date Title
TWI893104B (zh) 具反射元件之發光二極體晶片結構
TWI893105B (zh) 具反射元件之發光二極體晶片結構
CN119604108B (zh) 用于多色led像素单元的系统和方法
KR20240149971A (ko) 동축 다색 led를 위한 시스템들 및 방법들
CN115843393A (zh) 用于具有水平发光的多色led像素单元的系统和方法
CN119967999A (zh) 用于具有竖向发光的多色led像素单元的系统和方法
TWI891909B (zh) 具有一離軸微透鏡陣列結構之發光結構陣列系統
CN113826223B (zh) 半导体发光元件、半导体发光器件及显示装置
JP2025527582A (ja) 発光効率を向上させる発光画素構造システム及びその製造方法
CN119894310B (zh) 显示面板
CN121264193A (zh) 一种具有高反射率的单色微型led像素
CN121241693A (zh) 一种具有高反射率的单色微型led像素
CN121286129A (zh) 多色微型led像素阵列
CN121336517A (zh) 具有非同轴堆叠led结构的多色微型led像素
WO2017104547A1 (ja) 発光ユニットおよび表示装置
WO2023007823A1 (ja) 発光デバイスおよび画像表示装置
CN121220221A (zh) 具有非同轴堆叠led结构的多色微型led像素
CN121220205A (zh) 一种具有侧壁台阶的微型发光二极管结构
CN121220207A (zh) 具有非同轴堆叠led结构的多色微型led像素
CN121400100A (zh) 一种高反射率多色微型led像素