TWI890761B - 熱電變換模組 - Google Patents
熱電變換模組Info
- Publication number
- TWI890761B TWI890761B TW110110348A TW110110348A TWI890761B TW I890761 B TWI890761 B TW I890761B TW 110110348 A TW110110348 A TW 110110348A TW 110110348 A TW110110348 A TW 110110348A TW I890761 B TWI890761 B TW I890761B
- Authority
- TW
- Taiwan
- Prior art keywords
- thermoelectric conversion
- thermoelectric
- conversion material
- material layer
- mass
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-054840 | 2020-03-25 | ||
| JP2020054840 | 2020-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202141816A TW202141816A (zh) | 2021-11-01 |
| TWI890761B true TWI890761B (zh) | 2025-07-21 |
Family
ID=77891711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110110348A TWI890761B (zh) | 2020-03-25 | 2021-03-23 | 熱電變換模組 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12239020B2 (https=) |
| JP (1) | JPWO2021193357A1 (https=) |
| CN (1) | CN115336017A (https=) |
| TW (1) | TWI890761B (https=) |
| WO (1) | WO2021193357A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656292A (zh) * | 2009-09-16 | 2010-02-24 | 北京科技大学 | 一种铋碲系纳米多孔热电材料的制备方法 |
| WO2018143598A1 (ko) * | 2017-02-01 | 2018-08-09 | 엘지이노텍 주식회사 | 열전 소결체 및 열전소자 |
| CN108963064A (zh) * | 2017-12-28 | 2018-12-07 | 中国科学院物理研究所 | 热压烧结装置、微纳多孔结构的块体热电材料及其制法 |
| TW201917917A (zh) * | 2017-07-05 | 2019-05-01 | 日商三菱綜合材料股份有限公司 | 熱電變換模組及熱電變換模組之製造方法 |
| TW201941462A (zh) * | 2018-03-26 | 2019-10-16 | 日商琳得科股份有限公司 | 熱電變換模組 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442184A (en) * | 1987-08-08 | 1989-02-14 | Daiwa Shinku Corp | Manufacture of thermocouple |
| JP2002033525A (ja) * | 2000-07-13 | 2002-01-31 | Nhk Spring Co Ltd | 熱電素子とその製造方法 |
| WO2008140596A2 (en) * | 2006-12-01 | 2008-11-20 | Massachusetts Institute Of Technology (Mit) | Methods for high figure-of-merit in nanostructured thermoelectric materials |
| CN104465977B (zh) * | 2011-07-20 | 2018-05-01 | 中弥浩明 | 热电转变元件和热电转变发电装置 |
| JP2013219095A (ja) * | 2012-04-05 | 2013-10-24 | Toyota Industries Corp | 熱電材料及びその製造方法 |
| KR102445974B1 (ko) * | 2014-12-26 | 2022-09-21 | 린텍 가부시키가이샤 | 펠티에 냉각 소자 및 그의 제조 방법 |
| JP6644522B2 (ja) * | 2015-11-18 | 2020-02-12 | 日東電工株式会社 | 半導体装置の製造方法 |
| JP6721317B2 (ja) * | 2015-11-18 | 2020-07-15 | 日東電工株式会社 | 半導体装置の製造方法 |
| EP3475990B1 (en) * | 2016-06-23 | 2020-08-05 | 3M Innovative Properties Company | Thermoelectric tape |
| CN110431676A (zh) * | 2017-03-16 | 2019-11-08 | 琳得科株式会社 | 热电转换模块用电极材料及使用其的热电转换模块 |
| US10892396B2 (en) * | 2018-06-19 | 2021-01-12 | The Regents Of The University Of Michigan | Stabilized copper selenide thermoelectric materials and methods of fabrication thereof |
-
2021
- 2021-03-18 WO PCT/JP2021/011109 patent/WO2021193357A1/ja not_active Ceased
- 2021-03-18 US US17/913,487 patent/US12239020B2/en active Active
- 2021-03-18 CN CN202180024577.4A patent/CN115336017A/zh active Pending
- 2021-03-18 JP JP2022510042A patent/JPWO2021193357A1/ja active Pending
- 2021-03-23 TW TW110110348A patent/TWI890761B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656292A (zh) * | 2009-09-16 | 2010-02-24 | 北京科技大学 | 一种铋碲系纳米多孔热电材料的制备方法 |
| WO2018143598A1 (ko) * | 2017-02-01 | 2018-08-09 | 엘지이노텍 주식회사 | 열전 소결체 및 열전소자 |
| TW201917917A (zh) * | 2017-07-05 | 2019-05-01 | 日商三菱綜合材料股份有限公司 | 熱電變換模組及熱電變換模組之製造方法 |
| CN108963064A (zh) * | 2017-12-28 | 2018-12-07 | 中国科学院物理研究所 | 热压烧结装置、微纳多孔结构的块体热电材料及其制法 |
| TW201941462A (zh) * | 2018-03-26 | 2019-10-16 | 日商琳得科股份有限公司 | 熱電變換模組 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115336017A (zh) | 2022-11-11 |
| TW202141816A (zh) | 2021-11-01 |
| JPWO2021193357A1 (https=) | 2021-09-30 |
| US20230133754A1 (en) | 2023-05-04 |
| WO2021193357A1 (ja) | 2021-09-30 |
| US12239020B2 (en) | 2025-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7406756B2 (ja) | 熱電変換モジュール及びその製造方法 | |
| TWI817941B (zh) | 熱電轉換模組 | |
| TW201941462A (zh) | 熱電變換模組 | |
| TWI853833B (zh) | 熱電轉換材料的晶片的製造方法及使用由此製造方法得到的晶片的熱電轉換模組的製造方法 | |
| JP7348192B2 (ja) | 半導体素子 | |
| JP7543140B2 (ja) | 熱電変換材料のチップ | |
| JP7458375B2 (ja) | 熱電変換材料のチップの製造方法 | |
| US11974504B2 (en) | Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body | |
| TWI890761B (zh) | 熱電變換模組 | |
| JP2025020397A (ja) | 熱電変換モジュール | |
| TWI875999B (zh) | 熱電變換模組 | |
| TWI905277B (zh) | 熱電轉換材料層 | |
| JP7770192B2 (ja) | 熱電変換モジュール及びその製造方法 | |
| JP7631188B2 (ja) | 熱電変換材料層及びその製造方法 | |
| JP7760277B2 (ja) | 熱電変換材料層 | |
| JP2022057937A (ja) | 熱電変換モジュール用電極 | |
| KR20240147546A (ko) | 펠티에 냉각 열전 변환 모듈 | |
| JP2021192409A (ja) | 熱電変換モジュール用電極 | |
| WO2020203611A1 (ja) | 熱電変換材料のチップへのハンダ受理層形成方法 | |
| JP2022157779A (ja) | 熱電変換モジュール |