CN115336017A - 热电转换模块 - Google Patents

热电转换模块 Download PDF

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Publication number
CN115336017A
CN115336017A CN202180024577.4A CN202180024577A CN115336017A CN 115336017 A CN115336017 A CN 115336017A CN 202180024577 A CN202180024577 A CN 202180024577A CN 115336017 A CN115336017 A CN 115336017A
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CN
China
Prior art keywords
thermoelectric conversion
thermoelectric
conversion material
material layer
thermoelectric semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180024577.4A
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English (en)
Chinese (zh)
Inventor
山崎俊弥
加藤邦久
关佑太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
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Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of CN115336017A publication Critical patent/CN115336017A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN202180024577.4A 2020-03-25 2021-03-18 热电转换模块 Pending CN115336017A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-054840 2020-03-25
JP2020054840 2020-03-25
PCT/JP2021/011109 WO2021193357A1 (ja) 2020-03-25 2021-03-18 熱電変換モジュール

Publications (1)

Publication Number Publication Date
CN115336017A true CN115336017A (zh) 2022-11-11

Family

ID=77891711

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180024577.4A Pending CN115336017A (zh) 2020-03-25 2021-03-18 热电转换模块

Country Status (5)

Country Link
US (1) US12239020B2 (https=)
JP (1) JPWO2021193357A1 (https=)
CN (1) CN115336017A (https=)
TW (1) TWI890761B (https=)
WO (1) WO2021193357A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442184A (en) * 1987-08-08 1989-02-14 Daiwa Shinku Corp Manufacture of thermocouple
WO2016104615A1 (ja) * 2014-12-26 2016-06-30 リンテック株式会社 ペルチェ冷却素子及びその製造方法
JP2017098284A (ja) * 2015-11-18 2017-06-01 日東電工株式会社 半導体装置の製造方法
WO2018168837A1 (ja) * 2017-03-16 2018-09-20 リンテック株式会社 熱電変換モジュール用電極材料及びそれを用いた熱電変換モジュール

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033525A (ja) * 2000-07-13 2002-01-31 Nhk Spring Co Ltd 熱電素子とその製造方法
WO2008140596A2 (en) * 2006-12-01 2008-11-20 Massachusetts Institute Of Technology (Mit) Methods for high figure-of-merit in nanostructured thermoelectric materials
CN101656292B (zh) 2009-09-16 2011-04-20 北京科技大学 一种铋碲系纳米多孔热电材料的制备方法
CN104465977B (zh) * 2011-07-20 2018-05-01 中弥浩明 热电转变元件和热电转变发电装置
JP2013219095A (ja) * 2012-04-05 2013-10-24 Toyota Industries Corp 熱電材料及びその製造方法
JP6721317B2 (ja) * 2015-11-18 2020-07-15 日東電工株式会社 半導体装置の製造方法
EP3475990B1 (en) * 2016-06-23 2020-08-05 3M Innovative Properties Company Thermoelectric tape
WO2018143598A1 (ko) 2017-02-01 2018-08-09 엘지이노텍 주식회사 열전 소결체 및 열전소자
WO2019009202A1 (ja) 2017-07-05 2019-01-10 三菱マテリアル株式会社 熱電変換モジュール、及び、熱電変換モジュールの製造方法
CN108963064B (zh) 2017-12-28 2019-11-29 中国科学院物理研究所 热压烧结装置、微纳多孔结构的块体热电材料及其制法
US20210098672A1 (en) 2018-03-26 2021-04-01 Lintec Corporation Thermoelectric conversion module
US10892396B2 (en) * 2018-06-19 2021-01-12 The Regents Of The University Of Michigan Stabilized copper selenide thermoelectric materials and methods of fabrication thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442184A (en) * 1987-08-08 1989-02-14 Daiwa Shinku Corp Manufacture of thermocouple
WO2016104615A1 (ja) * 2014-12-26 2016-06-30 リンテック株式会社 ペルチェ冷却素子及びその製造方法
JP2017098284A (ja) * 2015-11-18 2017-06-01 日東電工株式会社 半導体装置の製造方法
WO2018168837A1 (ja) * 2017-03-16 2018-09-20 リンテック株式会社 熱電変換モジュール用電極材料及びそれを用いた熱電変換モジュール

Also Published As

Publication number Publication date
TW202141816A (zh) 2021-11-01
JPWO2021193357A1 (https=) 2021-09-30
TWI890761B (zh) 2025-07-21
US20230133754A1 (en) 2023-05-04
WO2021193357A1 (ja) 2021-09-30
US12239020B2 (en) 2025-02-25

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