TWI889054B - 半導體基板、半導體基板之製造方法及製造裝置、以及半導體元件之製造方法及製造裝置 - Google Patents

半導體基板、半導體基板之製造方法及製造裝置、以及半導體元件之製造方法及製造裝置 Download PDF

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TWI889054B
TWI889054B TW112147873A TW112147873A TWI889054B TW I889054 B TWI889054 B TW I889054B TW 112147873 A TW112147873 A TW 112147873A TW 112147873 A TW112147873 A TW 112147873A TW I889054 B TWI889054 B TW I889054B
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ridge
substrate
semiconductor substrate
wing
connecting portion
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TW202441583A (zh
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林雄一郎
谷口祐基
正木克明
神川剛
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日商京瓷股份有限公司
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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  • Semiconductor Lasers (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW112147873A 2022-12-09 2023-12-08 半導體基板、半導體基板之製造方法及製造裝置、以及半導體元件之製造方法及製造裝置 TWI889054B (zh)

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TWI889054B true TWI889054B (zh) 2025-07-01

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EP (1) EP4632793A1 (https=)
JP (1) JPWO2024122644A1 (https=)
KR (1) KR20250109204A (https=)
CN (1) CN120303772A (https=)
TW (1) TWI889054B (https=)
WO (1) WO2024122644A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050009165A (ko) * 2003-07-11 2005-01-24 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저 소자 및 그 제조 방법
US20120114004A1 (en) * 2010-11-04 2012-05-10 Panasonic Corporation Nitride semiconductor laser device and method of manufacturing the same
TW201434174A (zh) * 2013-01-11 2014-09-01 田村製作所股份有限公司 結晶積層構造體及發光元件
CN115206901A (zh) * 2022-09-15 2022-10-18 英诺赛科(苏州)半导体有限公司 一种半导体装置结构和其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013251304A (ja) 2012-05-30 2013-12-12 Furukawa Co Ltd 積層体および積層体の製造方法
JP2021145052A (ja) * 2020-03-12 2021-09-24 京セラ株式会社 半導体素子の製造方法
US20230127257A1 (en) * 2020-04-17 2023-04-27 The Regents Of The University Of California Method for removing a device using an epitaxial lateral overgrowth technique
JP6986645B1 (ja) * 2020-12-29 2021-12-22 京セラ株式会社 半導体基板、半導体デバイス、電子機器
CN117121161A (zh) * 2021-04-20 2023-11-24 京瓷株式会社 半导体基板和其制造方法以及制造装置、半导体器件和其制造方法以及制造装置、电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050009165A (ko) * 2003-07-11 2005-01-24 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저 소자 및 그 제조 방법
US20120114004A1 (en) * 2010-11-04 2012-05-10 Panasonic Corporation Nitride semiconductor laser device and method of manufacturing the same
TW201434174A (zh) * 2013-01-11 2014-09-01 田村製作所股份有限公司 結晶積層構造體及發光元件
CN115206901A (zh) * 2022-09-15 2022-10-18 英诺赛科(苏州)半导体有限公司 一种半导体装置结构和其制造方法

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CN120303772A (zh) 2025-07-11
WO2024122644A1 (ja) 2024-06-13
TW202441583A (zh) 2024-10-16
JPWO2024122644A1 (https=) 2024-06-13
EP4632793A1 (en) 2025-10-15

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