KR20250109204A - 반도체 기판, 반도체 기판의 제조 방법 및 제조 장치, 및 반도체 디바이스의 제조 방법 및 제조 장치 - Google Patents

반도체 기판, 반도체 기판의 제조 방법 및 제조 장치, 및 반도체 디바이스의 제조 방법 및 제조 장치

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Publication number
KR20250109204A
KR20250109204A KR1020257018876A KR20257018876A KR20250109204A KR 20250109204 A KR20250109204 A KR 20250109204A KR 1020257018876 A KR1020257018876 A KR 1020257018876A KR 20257018876 A KR20257018876 A KR 20257018876A KR 20250109204 A KR20250109204 A KR 20250109204A
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South Korea
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ridge
tether
semiconductor substrate
substrate
wing
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Korean (ko)
Inventor
유이치로 하야시
유키 타니구치
카츠아키 마사키
타케시 카미카와
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교세라 가부시키가이샤
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
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    • H10H20/80—Constructional details
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    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3438—Doping during depositing
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01S2304/00—Special growth methods for semiconductor lasers
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    • H01—ELECTRIC ELEMENTS
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020257018876A 2022-12-09 2023-12-08 반도체 기판, 반도체 기판의 제조 방법 및 제조 장치, 및 반도체 디바이스의 제조 방법 및 제조 장치 Pending KR20250109204A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022197453 2022-12-09
JPJP-P-2022-197453 2022-12-09
PCT/JP2023/044088 WO2024122644A1 (ja) 2022-12-09 2023-12-08 半導体基板、半導体基板の製造方法および製造装置、並びに半導体デバイスの製造方法および製造装置

Publications (1)

Publication Number Publication Date
KR20250109204A true KR20250109204A (ko) 2025-07-16

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KR1020257018876A Pending KR20250109204A (ko) 2022-12-09 2023-12-08 반도체 기판, 반도체 기판의 제조 방법 및 제조 장치, 및 반도체 디바이스의 제조 방법 및 제조 장치

Country Status (6)

Country Link
EP (1) EP4632793A1 (https=)
JP (1) JPWO2024122644A1 (https=)
KR (1) KR20250109204A (https=)
CN (1) CN120303772A (https=)
TW (1) TWI889054B (https=)
WO (1) WO2024122644A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013251304A (ja) 2012-05-30 2013-12-12 Furukawa Co Ltd 積層体および積層体の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI347054B (en) * 2003-07-11 2011-08-11 Nichia Corp Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device
JP2012099738A (ja) * 2010-11-04 2012-05-24 Panasonic Corp 窒化物半導体レーザ装置およびその製造方法
JP5865271B2 (ja) * 2013-01-11 2016-02-17 株式会社タムラ製作所 結晶積層構造体及び発光素子
JP2021145052A (ja) * 2020-03-12 2021-09-24 京セラ株式会社 半導体素子の製造方法
US20230127257A1 (en) * 2020-04-17 2023-04-27 The Regents Of The University Of California Method for removing a device using an epitaxial lateral overgrowth technique
JP6986645B1 (ja) * 2020-12-29 2021-12-22 京セラ株式会社 半導体基板、半導体デバイス、電子機器
CN117121161A (zh) * 2021-04-20 2023-11-24 京瓷株式会社 半导体基板和其制造方法以及制造装置、半导体器件和其制造方法以及制造装置、电子设备
CN115206901B (zh) * 2022-09-15 2023-02-17 英诺赛科(苏州)半导体有限公司 一种半导体装置结构和其制造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013251304A (ja) 2012-05-30 2013-12-12 Furukawa Co Ltd 積層体および積層体の製造方法

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CN120303772A (zh) 2025-07-11
WO2024122644A1 (ja) 2024-06-13
TWI889054B (zh) 2025-07-01
TW202441583A (zh) 2024-10-16
JPWO2024122644A1 (https=) 2024-06-13
EP4632793A1 (en) 2025-10-15

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