CN120303772A - 半导体基板、半导体基板的制造方法以及制造装置、和半导体器件的制造方法以及制造装置 - Google Patents

半导体基板、半导体基板的制造方法以及制造装置、和半导体器件的制造方法以及制造装置 Download PDF

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Publication number
CN120303772A
CN120303772A CN202380083494.1A CN202380083494A CN120303772A CN 120303772 A CN120303772 A CN 120303772A CN 202380083494 A CN202380083494 A CN 202380083494A CN 120303772 A CN120303772 A CN 120303772A
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Prior art keywords
ridge
tether
semiconductor substrate
wing
nitride semiconductor
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CN202380083494.1A
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Chinese (zh)
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林雄一郎
谷口祐基
正木克明
神川刚
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Kyocera Corp
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Kyocera Corp
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    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/80—Constructional details
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  • Semiconductor Lasers (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN202380083494.1A 2022-12-09 2023-12-08 半导体基板、半导体基板的制造方法以及制造装置、和半导体器件的制造方法以及制造装置 Pending CN120303772A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-197453 2022-12-09
JP2022197453 2022-12-09
PCT/JP2023/044088 WO2024122644A1 (ja) 2022-12-09 2023-12-08 半導体基板、半導体基板の製造方法および製造装置、並びに半導体デバイスの製造方法および製造装置

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CN120303772A true CN120303772A (zh) 2025-07-11

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EP (1) EP4632793A1 (https=)
JP (1) JPWO2024122644A1 (https=)
KR (1) KR20250109204A (https=)
CN (1) CN120303772A (https=)
TW (1) TWI889054B (https=)
WO (1) WO2024122644A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI347054B (en) * 2003-07-11 2011-08-11 Nichia Corp Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device
JP2012099738A (ja) * 2010-11-04 2012-05-24 Panasonic Corp 窒化物半導体レーザ装置およびその製造方法
JP2013251304A (ja) 2012-05-30 2013-12-12 Furukawa Co Ltd 積層体および積層体の製造方法
JP5865271B2 (ja) * 2013-01-11 2016-02-17 株式会社タムラ製作所 結晶積層構造体及び発光素子
JP2021145052A (ja) * 2020-03-12 2021-09-24 京セラ株式会社 半導体素子の製造方法
US20230127257A1 (en) * 2020-04-17 2023-04-27 The Regents Of The University Of California Method for removing a device using an epitaxial lateral overgrowth technique
JP6986645B1 (ja) * 2020-12-29 2021-12-22 京セラ株式会社 半導体基板、半導体デバイス、電子機器
CN117121161A (zh) * 2021-04-20 2023-11-24 京瓷株式会社 半导体基板和其制造方法以及制造装置、半导体器件和其制造方法以及制造装置、电子设备
CN115206901B (zh) * 2022-09-15 2023-02-17 英诺赛科(苏州)半导体有限公司 一种半导体装置结构和其制造方法

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WO2024122644A1 (ja) 2024-06-13
TWI889054B (zh) 2025-07-01
TW202441583A (zh) 2024-10-16
JPWO2024122644A1 (https=) 2024-06-13
EP4632793A1 (en) 2025-10-15

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