TWI860488B - 曝光設備、曝光方法、和製造物品的方法 - Google Patents

曝光設備、曝光方法、和製造物品的方法 Download PDF

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Publication number
TWI860488B
TWI860488B TW110136239A TW110136239A TWI860488B TW I860488 B TWI860488 B TW I860488B TW 110136239 A TW110136239 A TW 110136239A TW 110136239 A TW110136239 A TW 110136239A TW I860488 B TWI860488 B TW I860488B
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TW
Taiwan
Prior art keywords
light
substrate
mark
mask
exposure device
Prior art date
Application number
TW110136239A
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English (en)
Chinese (zh)
Other versions
TW202219655A (zh
Inventor
赤松昭郎
Original Assignee
日商佳能股份有限公司
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Publication of TW202219655A publication Critical patent/TW202219655A/zh
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Publication of TWI860488B publication Critical patent/TWI860488B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW110136239A 2020-11-05 2021-09-29 曝光設備、曝光方法、和製造物品的方法 TWI860488B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020185158A JP7566590B2 (ja) 2020-11-05 2020-11-05 露光装置、露光方法、及び物品の製造方法
JP2020-185158 2020-11-05

Publications (2)

Publication Number Publication Date
TW202219655A TW202219655A (zh) 2022-05-16
TWI860488B true TWI860488B (zh) 2024-11-01

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TW110136239A TWI860488B (zh) 2020-11-05 2021-09-29 曝光設備、曝光方法、和製造物品的方法

Country Status (5)

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US (1) US11531276B2 (enExample)
JP (2) JP7566590B2 (enExample)
KR (1) KR102893271B1 (enExample)
CN (1) CN114442445B (enExample)
TW (1) TWI860488B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022117091A (ja) 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201202870A (en) * 2010-07-08 2012-01-16 Canon Kk Exposure apparatus and device fabrication method
CN103091993A (zh) * 2011-11-02 2013-05-08 上海微电子装备有限公司 用于光刻机透镜热效应测量的测试标记及其测量方法

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JPS6026343A (ja) * 1983-07-22 1985-02-09 Nippon Kogaku Kk <Nikon> 投影露光装置
JP3013463B2 (ja) 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JPH0883753A (ja) * 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
AU1179200A (en) * 1998-11-18 2000-06-05 Nikon Corporation Exposure method and device
JP2002324746A (ja) * 2001-04-25 2002-11-08 Nikon Corp 露光方法及び露光装置
JP2002353099A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
JP2006135015A (ja) 2004-11-04 2006-05-25 Canon Inc 露光装置
JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
JP2010251546A (ja) 2009-04-16 2010-11-04 Canon Inc 露光方法
JP2012141452A (ja) 2010-12-28 2012-07-26 Olympus Corp 自動合焦機構および顕微鏡装置
JP2012189734A (ja) * 2011-03-10 2012-10-04 Canon Inc 露光装置
JP6552312B2 (ja) * 2015-07-16 2019-07-31 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
JP2019035813A (ja) * 2017-08-10 2019-03-07 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
JP2019079029A (ja) * 2017-10-24 2019-05-23 キヤノン株式会社 露光装置および物品の製造方法
JP2022026343A (ja) * 2020-07-30 2022-02-10 国立大学法人 筑波大学 感圧センサー、感圧センサーの製造方法および圧力検出方法

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
TW201202870A (en) * 2010-07-08 2012-01-16 Canon Kk Exposure apparatus and device fabrication method
CN103091993A (zh) * 2011-11-02 2013-05-08 上海微电子装备有限公司 用于光刻机透镜热效应测量的测试标记及其测量方法

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Publication number Publication date
KR20220061006A (ko) 2022-05-12
KR102893271B1 (ko) 2025-12-01
JP7566590B2 (ja) 2024-10-15
JP2024169699A (ja) 2024-12-05
CN114442445B (zh) 2025-10-28
TW202219655A (zh) 2022-05-16
US11531276B2 (en) 2022-12-20
CN114442445A (zh) 2022-05-06
JP2022074800A (ja) 2022-05-18
US20220137522A1 (en) 2022-05-05
JP7760677B2 (ja) 2025-10-27

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