KR102893271B1 - 노광 장치, 노광 방법, 및 물품 제조 방법 - Google Patents

노광 장치, 노광 방법, 및 물품 제조 방법

Info

Publication number
KR102893271B1
KR102893271B1 KR1020210142416A KR20210142416A KR102893271B1 KR 102893271 B1 KR102893271 B1 KR 102893271B1 KR 1020210142416 A KR1020210142416 A KR 1020210142416A KR 20210142416 A KR20210142416 A KR 20210142416A KR 102893271 B1 KR102893271 B1 KR 102893271B1
Authority
KR
South Korea
Prior art keywords
substrate
light quantity
quantity distribution
mask
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210142416A
Other languages
English (en)
Korean (ko)
Other versions
KR20220061006A (ko
Inventor
아키오 아카마츠
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20220061006A publication Critical patent/KR20220061006A/ko
Application granted granted Critical
Publication of KR102893271B1 publication Critical patent/KR102893271B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020210142416A 2020-11-05 2021-10-25 노광 장치, 노광 방법, 및 물품 제조 방법 Active KR102893271B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020185158A JP7566590B2 (ja) 2020-11-05 2020-11-05 露光装置、露光方法、及び物品の製造方法
JPJP-P-2020-185158 2020-11-05

Publications (2)

Publication Number Publication Date
KR20220061006A KR20220061006A (ko) 2022-05-12
KR102893271B1 true KR102893271B1 (ko) 2025-12-01

Family

ID=81362661

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210142416A Active KR102893271B1 (ko) 2020-11-05 2021-10-25 노광 장치, 노광 방법, 및 물품 제조 방법

Country Status (5)

Country Link
US (1) US11531276B2 (enExample)
JP (2) JP7566590B2 (enExample)
KR (1) KR102893271B1 (enExample)
CN (1) CN114442445B (enExample)
TW (1) TWI860488B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022117091A (ja) 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324746A (ja) * 2001-04-25 2002-11-08 Nikon Corp 露光方法及び露光装置
US20050243296A1 (en) 2001-05-22 2005-11-03 Canon Kabushiki Kaisha Position detecting method and apparatus, exposure apparatus and device manufacturing method
JP2010251546A (ja) 2009-04-16 2010-11-04 Canon Inc 露光方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026343A (ja) * 1983-07-22 1985-02-09 Nippon Kogaku Kk <Nikon> 投影露光装置
JP3013463B2 (ja) 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JPH0883753A (ja) * 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
AU1179200A (en) * 1998-11-18 2000-06-05 Nikon Corporation Exposure method and device
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
JP2006135015A (ja) 2004-11-04 2006-05-25 Canon Inc 露光装置
JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
JP5662717B2 (ja) * 2010-07-08 2015-02-04 キヤノン株式会社 露光装置及びデバイスの製造方法
JP2012141452A (ja) 2010-12-28 2012-07-26 Olympus Corp 自動合焦機構および顕微鏡装置
JP2012189734A (ja) * 2011-03-10 2012-10-04 Canon Inc 露光装置
CN103091993B (zh) * 2011-11-02 2015-02-11 上海微电子装备有限公司 用于光刻机透镜热效应测量的测试标记及其测量方法
JP6552312B2 (ja) * 2015-07-16 2019-07-31 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
JP2019035813A (ja) * 2017-08-10 2019-03-07 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
JP2019079029A (ja) * 2017-10-24 2019-05-23 キヤノン株式会社 露光装置および物品の製造方法
JP2022026343A (ja) * 2020-07-30 2022-02-10 国立大学法人 筑波大学 感圧センサー、感圧センサーの製造方法および圧力検出方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324746A (ja) * 2001-04-25 2002-11-08 Nikon Corp 露光方法及び露光装置
US20050243296A1 (en) 2001-05-22 2005-11-03 Canon Kabushiki Kaisha Position detecting method and apparatus, exposure apparatus and device manufacturing method
JP2010251546A (ja) 2009-04-16 2010-11-04 Canon Inc 露光方法

Also Published As

Publication number Publication date
KR20220061006A (ko) 2022-05-12
JP7566590B2 (ja) 2024-10-15
TWI860488B (zh) 2024-11-01
JP2024169699A (ja) 2024-12-05
CN114442445B (zh) 2025-10-28
TW202219655A (zh) 2022-05-16
US11531276B2 (en) 2022-12-20
CN114442445A (zh) 2022-05-06
JP2022074800A (ja) 2022-05-18
US20220137522A1 (en) 2022-05-05
JP7760677B2 (ja) 2025-10-27

Similar Documents

Publication Publication Date Title
JP3634068B2 (ja) 露光方法及び装置
US6525817B1 (en) Inspection method and apparatus for projection optical systems
US7528966B2 (en) Position detection apparatus and exposure apparatus
US8472009B2 (en) Exposure apparatus and device manufacturing method
US5945239A (en) Adjustment method for an optical projection system to change image distortion
US20020080338A1 (en) Projection exposure apparatus
JPH1145846A (ja) 走査型露光方法及び装置
JP7760677B2 (ja) 露光装置、露光方法、及び物品の製造方法
US6169602B1 (en) Inspection method and apparatus for projection optical systems
JP4235392B2 (ja) 位置検出装置、面形状推測装置、露光装置、及びデバイスの製造方法
US20090168038A1 (en) Exposure apparatus, detection method, and method of manufacturing device
US20060250598A1 (en) Exposure apparatus and method
US8130360B2 (en) Exposure apparatus and device manufacturing method
US7221434B2 (en) Exposure method and apparatus
US6539326B1 (en) Position detecting system for projection exposure apparatus
TWI864352B (zh) 測量設備、曝光設備及物品製造方法
JPH11251218A (ja) 位置検出方法及び装置、並びに該装置を備えた露光装置
TWI396948B (zh) Projection exposure system and optimal imaging plane position and projection magnification detection method
JPH06349700A (ja) 投影露光装置
JPH09283421A (ja) 投影露光装置
JPH08227845A (ja) 投影光学系の検査方法、及び該方法を実施するための投影露光装置
JPH11126747A (ja) 投影露光方法
JPH10284415A (ja) 結像位置検出装置及び半導体デバイスの製造方法
JPH10284370A (ja) 焦点位置検出装置及び該装置を備えた投影露光装置
JPH09115822A (ja) 投影露光装置及びそれを用いた半導体デバイスの製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U11-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)