TWI859503B - 測量設備、微影設備及物品製造方法 - Google Patents

測量設備、微影設備及物品製造方法 Download PDF

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Publication number
TWI859503B
TWI859503B TW111103268A TW111103268A TWI859503B TW I859503 B TWI859503 B TW I859503B TW 111103268 A TW111103268 A TW 111103268A TW 111103268 A TW111103268 A TW 111103268A TW I859503 B TWI859503 B TW I859503B
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TW
Taiwan
Prior art keywords
distance
mold
error
measuring
substrate
Prior art date
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TW111103268A
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English (en)
Chinese (zh)
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TW202234032A (zh
Inventor
服部正
Original Assignee
日商佳能股份有限公司
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Publication of TW202234032A publication Critical patent/TW202234032A/zh
Application granted granted Critical
Publication of TWI859503B publication Critical patent/TWI859503B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111103268A 2021-02-19 2022-01-26 測量設備、微影設備及物品製造方法 TWI859503B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021025523A JP7518782B2 (ja) 2021-02-19 2021-02-19 計測装置、リソグラフィ装置、および物品の製造方法
JP2021-025523 2021-02-19

Publications (2)

Publication Number Publication Date
TW202234032A TW202234032A (zh) 2022-09-01
TWI859503B true TWI859503B (zh) 2024-10-21

Family

ID=82899558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111103268A TWI859503B (zh) 2021-02-19 2022-01-26 測量設備、微影設備及物品製造方法

Country Status (4)

Country Link
US (1) US12585202B2 (https=)
JP (1) JP7518782B2 (https=)
KR (1) KR102932934B1 (https=)
TW (1) TWI859503B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025021731A (ja) * 2023-08-01 2025-02-14 キヤノン株式会社 インプリント装置及び物品の製造方法
JP2025110705A (ja) * 2024-01-16 2025-07-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画の偏向位置調整方法及び荷電粒子ビーム描画方法

Citations (9)

* Cited by examiner, † Cited by third party
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TW200741817A (en) * 2006-02-28 2007-11-01 Canon Kk Measurement apparatus, exposure apparatus having the same, and device manufacturing method
TW201245895A (en) * 2011-02-11 2012-11-16 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
JP5138115B2 (ja) * 2011-03-03 2013-02-06 三洋電機株式会社 情報取得装置及びその情報取得装置を有する物体検出装置
TW201614188A (en) * 2014-08-29 2016-04-16 Asml Netherlands Bv Method for controlling a distance between two objects, inspection apparatus and method
TW201702750A (zh) * 2015-03-25 2017-01-16 Ａｓｍｌ荷蘭公司 度量衡方法、度量衡裝置及元件製造方法
US20180144995A1 (en) * 2016-11-23 2018-05-24 Samsung Electronics Co., Ltd. Optical inspection apparatus and method and method of fabricating semiconductor device using the apparatus
CN108253898A (zh) * 2016-12-29 2018-07-06 乐金显示有限公司 检测设备及使用该检测设备的检测方法
TW201908689A (zh) * 2017-06-05 2019-03-01 日商大塚電子股份有限公司 光學測定裝置及光學測定方法
TW201915428A (zh) * 2017-09-26 2019-04-16 日商歐姆龍股份有限公司 位移測量裝置、測量系統、及位移測量方法

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US6201609B1 (en) 1999-08-27 2001-03-13 Zygo Corporation Interferometers utilizing polarization preserving optical systems
US6687013B2 (en) * 2000-03-28 2004-02-03 Hitachi, Ltd. Laser interferometer displacement measuring system, exposure apparatus, and electron beam lithography apparatus
US7227612B2 (en) * 2004-09-10 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006250826A (ja) 2005-03-11 2006-09-21 Yamagata Prefecture 計測素子、加工装置および計測方法、屈折率の計測素子
JP4494438B2 (ja) * 2007-06-15 2010-06-30 株式会社オプセル レーザ走査干渉計
JP2010014536A (ja) 2008-07-03 2010-01-21 Yamagata Prefecture 加工装置に搭載される被測定物の計測方法および計測装置
US8120781B2 (en) 2008-11-26 2012-02-21 Zygo Corporation Interferometric systems and methods featuring spectral analysis of unevenly sampled data
JP5602538B2 (ja) 2010-03-03 2014-10-08 キヤノン株式会社 光波干渉計測装置
US10124410B2 (en) * 2010-09-25 2018-11-13 Ipg Photonics Corporation Methods and systems for coherent imaging and feedback control for modification of materials
JP6082320B2 (ja) 2013-06-05 2017-02-15 日本電信電話株式会社 光軸調整装置及びその工程
HK1225513A1 (zh) * 2014-01-16 2017-09-08 株式会社尼康 曝光装置及曝光方法、以及器件制造方法
JP6655888B2 (ja) 2014-08-20 2020-03-04 キヤノン株式会社 計測装置、計測方法、および物品の製造方法
JP7199093B2 (ja) 2019-01-29 2023-01-05 大塚電子株式会社 光学測定システムおよび光学測定方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200741817A (en) * 2006-02-28 2007-11-01 Canon Kk Measurement apparatus, exposure apparatus having the same, and device manufacturing method
TW201245895A (en) * 2011-02-11 2012-11-16 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
JP5138115B2 (ja) * 2011-03-03 2013-02-06 三洋電機株式会社 情報取得装置及びその情報取得装置を有する物体検出装置
TW201614188A (en) * 2014-08-29 2016-04-16 Asml Netherlands Bv Method for controlling a distance between two objects, inspection apparatus and method
TW201702750A (zh) * 2015-03-25 2017-01-16 Ａｓｍｌ荷蘭公司 度量衡方法、度量衡裝置及元件製造方法
US20180144995A1 (en) * 2016-11-23 2018-05-24 Samsung Electronics Co., Ltd. Optical inspection apparatus and method and method of fabricating semiconductor device using the apparatus
CN108253898A (zh) * 2016-12-29 2018-07-06 乐金显示有限公司 检测设备及使用该检测设备的检测方法
TW201908689A (zh) * 2017-06-05 2019-03-01 日商大塚電子股份有限公司 光學測定裝置及光學測定方法
TW201915428A (zh) * 2017-09-26 2019-04-16 日商歐姆龍股份有限公司 位移測量裝置、測量系統、及位移測量方法

Also Published As

Publication number Publication date
JP7518782B2 (ja) 2024-07-18
KR20220118942A (ko) 2022-08-26
US20220269186A1 (en) 2022-08-25
KR102932934B1 (ko) 2026-03-03
US12585202B2 (en) 2026-03-24
JP2022127394A (ja) 2022-08-31
TW202234032A (zh) 2022-09-01

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