TWI852931B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

Info

Publication number
TWI852931B
TWI852931B TW108117293A TW108117293A TWI852931B TW I852931 B TWI852931 B TW I852931B TW 108117293 A TW108117293 A TW 108117293A TW 108117293 A TW108117293 A TW 108117293A TW I852931 B TWI852931 B TW I852931B
Authority
TW
Taiwan
Prior art keywords
period
voltage
power
component
effective value
Prior art date
Application number
TW108117293A
Other languages
English (en)
Chinese (zh)
Other versions
TW202004383A (zh
Inventor
山田和人
遠藤宏紀
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202004383A publication Critical patent/TW202004383A/zh
Application granted granted Critical
Publication of TWI852931B publication Critical patent/TWI852931B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW108117293A 2018-05-31 2019-05-20 基板處理方法及基板處理裝置 TWI852931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018104881A JP6971199B2 (ja) 2018-05-31 2018-05-31 基板処理方法および基板処理装置
JP2018-104881 2018-05-31

Publications (2)

Publication Number Publication Date
TW202004383A TW202004383A (zh) 2020-01-16
TWI852931B true TWI852931B (zh) 2024-08-21

Family

ID=68694214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108117293A TWI852931B (zh) 2018-05-31 2019-05-20 基板處理方法及基板處理裝置

Country Status (5)

Country Link
US (1) US10896832B2 (https=)
JP (1) JP6971199B2 (https=)
KR (1) KR102831849B1 (https=)
CN (1) CN110556286B (https=)
TW (1) TWI852931B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113574648B (zh) * 2019-03-13 2026-01-23 朗姆研究公司 用于估计温度的静电卡盘加热器电阻测量
JP7466377B2 (ja) * 2020-05-21 2024-04-12 東京エレクトロン株式会社 基板処理装置
US11842907B2 (en) * 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion
JP7537147B2 (ja) * 2020-07-10 2024-08-21 東京エレクトロン株式会社 載置台、基板を処理する装置、及び基板を温度調節する方法
JP7446182B2 (ja) 2020-08-26 2024-03-08 東京エレクトロン株式会社 基板処理装置及びノイズ影響低減方法
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
US20220384223A1 (en) * 2021-05-27 2022-12-01 Tokyo Electron Limited Board processing equipment and recovery processing method
JP7697666B2 (ja) * 2021-07-19 2025-06-24 株式会社ブイ・テクノロジー 集束イオンビーム装置
KR102654890B1 (ko) * 2021-08-27 2024-04-05 세메스 주식회사 기판 처리 장치 및 발열체의 온도 제어 방법
DE112022006784T5 (de) * 2022-03-07 2025-03-27 Advantest Corporation Temperatursteuervorrichtung, Testvorrichtung, Temperatursteuerverfahren und Temperatursteuerprogramm
KR102716710B1 (ko) * 2022-05-18 2024-10-15 주식회사 테스 기판지지유닛

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110015803A1 (en) * 2006-09-25 2011-01-20 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US20160372355A1 (en) * 2015-06-22 2016-12-22 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US20180059168A1 (en) * 2016-08-30 2018-03-01 Samsung Electronics Co., Ltd. Diagnosing an abnormal state of a substrate-processing apparatus

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121110B2 (ja) * 1992-04-30 2000-12-25 キヤノン株式会社 定着装置
JP2000339039A (ja) * 1999-05-25 2000-12-08 Tokyo Electron Ltd 加熱手段の温度制御方法、その装置及び熱処理装置
JP2001077183A (ja) * 1999-06-09 2001-03-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
US20040081439A1 (en) * 2000-05-04 2004-04-29 Applied Materials, Inc. Actively-controlled electrostatic chuck heater
US7176508B2 (en) * 2004-07-27 2007-02-13 International Business Machines Corporation Temperature sensor for high power very large scale integration circuits
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP4786925B2 (ja) 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR100966375B1 (ko) * 2005-04-04 2010-06-28 가부시키가이샤 코쿠사이덴키 세미컨덕터 서비스 공급전력 조정기 및 반도체 제조장치
JP2010010214A (ja) * 2008-06-24 2010-01-14 Oki Semiconductor Co Ltd 半導体装置の製造方法、半導体製造装置、及び記憶媒体
JP2010101742A (ja) * 2008-10-23 2010-05-06 Nikon Corp 温度計測装置、気体供給装置、及び露光装置
JP5567318B2 (ja) * 2009-11-20 2014-08-06 株式会社国際電気セミコンダクターサービス 電力供給システム、基板処理装置、半導体製造装置および劣化診断方法
JP5689283B2 (ja) * 2010-11-02 2015-03-25 東京エレクトロン株式会社 基板処理方法及びその方法を実行するプログラムを記憶する記憶媒体
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP6203476B2 (ja) * 2011-03-08 2017-09-27 東京エレクトロン株式会社 基板温度制御方法及びプラズマ処理装置
US8552346B2 (en) * 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
WO2013025852A1 (en) * 2011-08-17 2013-02-21 Lam Research Corporation A system and method for monitoring temperatures of and controlling multiplexed heater array
JP6100672B2 (ja) * 2013-10-25 2017-03-22 東京エレクトロン株式会社 温度制御機構、温度制御方法及び基板処理装置
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6432458B2 (ja) * 2015-07-07 2018-12-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6688172B2 (ja) 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
JP2018063974A (ja) * 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110015803A1 (en) * 2006-09-25 2011-01-20 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US20160372355A1 (en) * 2015-06-22 2016-12-22 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US20180059168A1 (en) * 2016-08-30 2018-03-01 Samsung Electronics Co., Ltd. Diagnosing an abnormal state of a substrate-processing apparatus

Also Published As

Publication number Publication date
KR20190136986A (ko) 2019-12-10
US20190371634A1 (en) 2019-12-05
JP2019212670A (ja) 2019-12-12
KR102831849B1 (ko) 2025-07-08
TW202004383A (zh) 2020-01-16
CN110556286B (zh) 2024-04-12
CN110556286A (zh) 2019-12-10
US10896832B2 (en) 2021-01-19
JP6971199B2 (ja) 2021-11-24

Similar Documents

Publication Publication Date Title
TWI852931B (zh) 基板處理方法及基板處理裝置
US12402208B2 (en) Substrate processing system and substrate processing method
US12142501B2 (en) Substrate processing system and temperature control method
CN110010439A (zh) 等离子体蚀刻装置和等离子体蚀刻方法
KR102324723B1 (ko) 온도 제어 장치, 온도 제어 방법 및 프로그램
TWI859256B (zh) 修正資訊作成方法、基板處理方法及基板處理系統
JP7394601B2 (ja) プラズマ処理装置及び測定方法
US20200177825A1 (en) Calibration method of infrared camera and calibration system of infrared camera
JP2020095020A (ja) 赤外線カメラの校正方法および赤外線カメラの校正システム
JP6961025B2 (ja) 基板処理システム
US11721528B2 (en) Plasma processing apparatus and control method
US12200826B2 (en) Substrate processing apparatus and noise impact reducing method