JP7446182B2 - 基板処理装置及びノイズ影響低減方法 - Google Patents
基板処理装置及びノイズ影響低減方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 22
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- 239000000463 material Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 12
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0019—Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1917—Control of temperature characterised by the use of electric means using digital means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
- G05D23/2401—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor using a heating element as a sensing element
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Control Of Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Description
形成される。ガス拡散室42aは、本体部42内部に形成される。ガス導入口42bは、本体部42のうちのガス拡散室42aよりも上側に形成され、ガス拡散室42aに連通する。複数のガス流出口42cは、本体部42のうちのガス拡散室42aより上部天板43側に形成され、ガス拡散室42aに連通する。
20 載置台
25 静電チャック
73d AD変換器
74d AD変換器
75 制御部
76 算出部
77 算出部
78 変換部
79 比較制御部
253a ヒータ抵抗器
761V 実効値算出部
762V 平均値算出部
763V ノイズ生成部
764V 加算部
765V 乗算部
766V 平方根算出部
761I 実効値算出部
762I 平均値算出部
763I ノイズ生成部
764I 加算部
765I 乗算部
766I 平方根算出部
Claims (11)
- ヒータ抵抗器に印可される電圧及び前記ヒータ抵抗器を流れる電流のディジタル値を出力するAD変換器と、
前記AD変換器の出力結果から得られる、前記ヒータ抵抗器の抵抗値を算出するための算出用電圧及び算出用電流を用いて、前記ヒータ抵抗器の温度を制御する制御部と、
備え、
前記制御部は、前記AD変換器の出力結果から得られるディジタル信号と、正規分布ノイズを含むノイズ信号との合成結果に基づいて、前記算出用電圧及び算出用電流の少なくとも一方を算出する、
基板処理装置。 - 前記ノイズ信号は、前記ディジタル信号の平均値に前記正規分布ノイズが重畳されたノイズ信号であり、
前記制御部による前記算出は、前記ディジタル信号の平均値と、前記正規分布ノイズとの加算を含む、
請求項1に記載の基板処理装置。 - 前記制御部による前記算出は、前記ディジタル信号と、前記ノイズ信号との乗算を含む、
請求項1又は2に記載の基板処理装置。 - 前記制御部による前記算出は、前記ディジタル信号と、前記ノイズ信号との乗算結果の平方根の算出を含む、
請求項1~3のいずれか1項に記載の基板処理装置。 - 前記ディジタル信号は、実効値信号である、
請求項1~4のいずれか1項に記載の基板処理装置。 - 前記制御部による前記算出は、前記ディジタル信号と、前記ノイズ信号との乗算及び乗算結果の平方根の算出それぞれの繰り返しを含む、
請求項1~5のいずれか1項に記載の基板処理装置。 - 前記繰り返しの数が増加するにつれて、前記ノイズ信号に含まれる前記正規分布ノイズの分散が小さくなる、
請求項6に記載の基板処理装置。 - 前記正規分布ノイズは、ホワイトノイズである、
請求項1~7のいずれか1項に記載の基板処理装置。 - 前記ヒータ抵抗器は、基板の載置台に設けられる、
請求項1~8のいずれか1項に記載の基板処理装置。 - 前記ヒータ抵抗器は、載置台に含まれる静電チャックに埋め込まれる、
請求項9に記載の基板処理装置。 - ヒータ抵抗器に印可される電圧、及び、前記ヒータ抵抗器を流れる電流を、AD変換器を用いてディジタル値で取得するステップと、
前記取得するステップの取得結果から得られるディジタル信号と、正規分布ノイズを含むノイズ信号との合成結果に基づいて、前記ヒータ抵抗器の抵抗値を算出するための算出用電圧及び算出用電流の少なくとも一方を算出するステップと、
を含む、
ノイズ影響低減方法。
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JP4165642B2 (ja) | 2003-07-24 | 2008-10-15 | 沖電気工業株式会社 | 券類発行装置 |
JP2017228230A (ja) | 2016-06-24 | 2017-12-28 | 東京エレクトロン株式会社 | 基板処理システムおよび温度制御方法 |
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US7697909B2 (en) * | 2004-09-01 | 2010-04-13 | National Semiconductor Corporation | Extended range RMS-DC converter |
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JP7039236B2 (ja) * | 2017-09-29 | 2022-03-22 | キヤノン株式会社 | 逐次比較型ad変換器、撮像装置、撮像システム、移動体 |
JP6816240B1 (ja) * | 2019-10-28 | 2021-01-20 | 日本たばこ産業株式会社 | エアロゾル吸引器用の制御装置及びエアロゾル吸引器 |
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JP4165642B2 (ja) | 2003-07-24 | 2008-10-15 | 沖電気工業株式会社 | 券類発行装置 |
JP2017228230A (ja) | 2016-06-24 | 2017-12-28 | 東京エレクトロン株式会社 | 基板処理システムおよび温度制御方法 |
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