TWI852931B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

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Publication number
TWI852931B
TWI852931B TW108117293A TW108117293A TWI852931B TW I852931 B TWI852931 B TW I852931B TW 108117293 A TW108117293 A TW 108117293A TW 108117293 A TW108117293 A TW 108117293A TW I852931 B TWI852931 B TW I852931B
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TW
Taiwan
Prior art keywords
period
voltage
power
component
effective value
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TW108117293A
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English (en)
Chinese (zh)
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TW202004383A (zh
Inventor
山田和人
遠藤宏紀
Original Assignee
日商東京威力科創股份有限公司
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
TW108117293A 2018-05-31 2019-05-20 基板處理方法及基板處理裝置 TWI852931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018104881A JP6971199B2 (ja) 2018-05-31 2018-05-31 基板処理方法および基板処理装置
JP2018-104881 2018-05-31

Publications (2)

Publication Number Publication Date
TW202004383A TW202004383A (zh) 2020-01-16
TWI852931B true TWI852931B (zh) 2024-08-21

Family

ID=68694214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108117293A TWI852931B (zh) 2018-05-31 2019-05-20 基板處理方法及基板處理裝置

Country Status (5)

Country Link
US (1) US10896832B2 (enExample)
JP (1) JP6971199B2 (enExample)
KR (1) KR102831849B1 (enExample)
CN (1) CN110556286B (enExample)
TW (1) TWI852931B (enExample)

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CN113574648A (zh) * 2019-03-13 2021-10-29 朗姆研究公司 用于估计温度的静电卡盘加热器电阻测量
JP7466377B2 (ja) 2020-05-21 2024-04-12 東京エレクトロン株式会社 基板処理装置
US11842907B2 (en) * 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion
JP7537147B2 (ja) * 2020-07-10 2024-08-21 東京エレクトロン株式会社 載置台、基板を処理する装置、及び基板を温度調節する方法
JP7446182B2 (ja) 2020-08-26 2024-03-08 東京エレクトロン株式会社 基板処理装置及びノイズ影響低減方法
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
US20220384223A1 (en) * 2021-05-27 2022-12-01 Tokyo Electron Limited Board processing equipment and recovery processing method
KR102654890B1 (ko) * 2021-08-27 2024-04-05 세메스 주식회사 기판 처리 장치 및 발열체의 온도 제어 방법
WO2023170737A1 (ja) * 2022-03-07 2023-09-14 株式会社アドバンテスト 温度制御装置、試験装置、温度制御方法、および温度制御プログラム
KR102716710B1 (ko) * 2022-05-18 2024-10-15 주식회사 테스 기판지지유닛

Citations (3)

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US20110015803A1 (en) * 2006-09-25 2011-01-20 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US20160372355A1 (en) * 2015-06-22 2016-12-22 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US20180059168A1 (en) * 2016-08-30 2018-03-01 Samsung Electronics Co., Ltd. Diagnosing an abnormal state of a substrate-processing apparatus

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JP2000339039A (ja) * 1999-05-25 2000-12-08 Tokyo Electron Ltd 加熱手段の温度制御方法、その装置及び熱処理装置
JP2001077183A (ja) * 1999-06-09 2001-03-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
US20040081439A1 (en) * 2000-05-04 2004-04-29 Applied Materials, Inc. Actively-controlled electrostatic chuck heater
US7176508B2 (en) * 2004-07-27 2007-02-13 International Business Machines Corporation Temperature sensor for high power very large scale integration circuits
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
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JP4786925B2 (ja) 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2010010214A (ja) * 2008-06-24 2010-01-14 Oki Semiconductor Co Ltd 半導体装置の製造方法、半導体製造装置、及び記憶媒体
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JP6100672B2 (ja) * 2013-10-25 2017-03-22 東京エレクトロン株式会社 温度制御機構、温度制御方法及び基板処理装置
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6432458B2 (ja) * 2015-07-07 2018-12-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
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Publication number Priority date Publication date Assignee Title
US20110015803A1 (en) * 2006-09-25 2011-01-20 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US20160372355A1 (en) * 2015-06-22 2016-12-22 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US20180059168A1 (en) * 2016-08-30 2018-03-01 Samsung Electronics Co., Ltd. Diagnosing an abnormal state of a substrate-processing apparatus

Also Published As

Publication number Publication date
KR102831849B1 (ko) 2025-07-08
TW202004383A (zh) 2020-01-16
CN110556286B (zh) 2024-04-12
JP2019212670A (ja) 2019-12-12
JP6971199B2 (ja) 2021-11-24
KR20190136986A (ko) 2019-12-10
US20190371634A1 (en) 2019-12-05
US10896832B2 (en) 2021-01-19
CN110556286A (zh) 2019-12-10

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