CN110556286B - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN110556286B
CN110556286B CN201910470018.0A CN201910470018A CN110556286B CN 110556286 B CN110556286 B CN 110556286B CN 201910470018 A CN201910470018 A CN 201910470018A CN 110556286 B CN110556286 B CN 110556286B
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voltage
effective value
component
change
temperature
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CN110556286A (zh
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山田和人
远藤宏纪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201910470018.0A 2018-05-31 2019-05-31 基板处理方法和基板处理装置 Active CN110556286B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-104881 2018-05-31
JP2018104881A JP6971199B2 (ja) 2018-05-31 2018-05-31 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
CN110556286A CN110556286A (zh) 2019-12-10
CN110556286B true CN110556286B (zh) 2024-04-12

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Family Applications (1)

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CN201910470018.0A Active CN110556286B (zh) 2018-05-31 2019-05-31 基板处理方法和基板处理装置

Country Status (5)

Country Link
US (1) US10896832B2 (enExample)
JP (1) JP6971199B2 (enExample)
KR (1) KR102831849B1 (enExample)
CN (1) CN110556286B (enExample)
TW (1) TWI852931B (enExample)

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KR20210128025A (ko) * 2019-03-13 2021-10-25 램 리써치 코포레이션 온도를 근사화하기 위한 정전 척 히터 저항 측정
JP7466377B2 (ja) * 2020-05-21 2024-04-12 東京エレクトロン株式会社 基板処理装置
US11842907B2 (en) * 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion
JP7537147B2 (ja) * 2020-07-10 2024-08-21 東京エレクトロン株式会社 載置台、基板を処理する装置、及び基板を温度調節する方法
JP7446182B2 (ja) 2020-08-26 2024-03-08 東京エレクトロン株式会社 基板処理装置及びノイズ影響低減方法
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
US12652993B2 (en) * 2021-05-27 2026-06-09 Tokyo Electron Limited Board processing equipment and recovery processing method
JP7697666B2 (ja) * 2021-07-19 2025-06-24 株式会社ブイ・テクノロジー 集束イオンビーム装置
KR102654890B1 (ko) * 2021-08-27 2024-04-05 세메스 주식회사 기판 처리 장치 및 발열체의 온도 제어 방법
WO2023170737A1 (ja) * 2022-03-07 2023-09-14 株式会社アドバンテスト 温度制御装置、試験装置、温度制御方法、および温度制御プログラム
KR102716710B1 (ko) * 2022-05-18 2024-10-15 주식회사 테스 기판지지유닛
CN120406617A (zh) * 2025-04-27 2025-08-01 西安微电子技术研究所 一种电路模块的恒温控制系统

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JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2010101742A (ja) * 2008-10-23 2010-05-06 Nikon Corp 温度計測装置、気体供給装置、及び露光装置
JP2011103489A (ja) * 2011-01-31 2011-05-26 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
KR20120046702A (ko) * 2010-11-02 2012-05-10 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체
JP2012199535A (ja) * 2011-03-08 2012-10-18 Tokyo Electron Ltd 基板温度制御方法及びプラズマ処理装置
JP2013118385A (ja) * 2005-04-04 2013-06-13 Kokusai Electric Semiconductor Service Inc 供給電力調整器、半導体製造装置及び半導体デバイスの製造方法
CN103828031A (zh) * 2011-08-17 2014-05-28 朗姆研究公司 用于监测复用加热器阵列的温度并控制该阵列的系统和方法
WO2015060185A1 (ja) * 2013-10-25 2015-04-30 東京エレクトロン株式会社 温度制御機構、温度制御方法及び基板処理装置
CN106298447A (zh) * 2015-06-24 2017-01-04 东京毅力科创株式会社 温度控制方法
JP2017228230A (ja) * 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
CN107919301A (zh) * 2016-10-11 2018-04-17 东京毅力科创株式会社 温度控制装置、温度控制方法以及载置台

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Publication number Priority date Publication date Assignee Title
JP2001077183A (ja) * 1999-06-09 2001-03-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2013118385A (ja) * 2005-04-04 2013-06-13 Kokusai Electric Semiconductor Service Inc 供給電力調整器、半導体製造装置及び半導体デバイスの製造方法
JP2010101742A (ja) * 2008-10-23 2010-05-06 Nikon Corp 温度計測装置、気体供給装置、及び露光装置
KR20120046702A (ko) * 2010-11-02 2012-05-10 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체
JP2011103489A (ja) * 2011-01-31 2011-05-26 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2012199535A (ja) * 2011-03-08 2012-10-18 Tokyo Electron Ltd 基板温度制御方法及びプラズマ処理装置
CN103828031A (zh) * 2011-08-17 2014-05-28 朗姆研究公司 用于监测复用加热器阵列的温度并控制该阵列的系统和方法
WO2015060185A1 (ja) * 2013-10-25 2015-04-30 東京エレクトロン株式会社 温度制御機構、温度制御方法及び基板処理装置
CN106298447A (zh) * 2015-06-24 2017-01-04 东京毅力科创株式会社 温度控制方法
JP2017228230A (ja) * 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
CN107546150A (zh) * 2016-06-24 2018-01-05 东京毅力科创株式会社 基板处理系统和温度控制方法
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Also Published As

Publication number Publication date
US10896832B2 (en) 2021-01-19
TW202004383A (zh) 2020-01-16
US20190371634A1 (en) 2019-12-05
JP2019212670A (ja) 2019-12-12
KR20190136986A (ko) 2019-12-10
TWI852931B (zh) 2024-08-21
JP6971199B2 (ja) 2021-11-24
KR102831849B1 (ko) 2025-07-08
CN110556286A (zh) 2019-12-10

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