TWI848999B - 用於處理腔室的射頻濾波器系統 - Google Patents

用於處理腔室的射頻濾波器系統 Download PDF

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Publication number
TWI848999B
TWI848999B TW108140075A TW108140075A TWI848999B TW I848999 B TWI848999 B TW I848999B TW 108140075 A TW108140075 A TW 108140075A TW 108140075 A TW108140075 A TW 108140075A TW I848999 B TWI848999 B TW I848999B
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TW
Taiwan
Prior art keywords
filter
filter stage
inductor
capacitor
frequency
Prior art date
Application number
TW108140075A
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English (en)
Chinese (zh)
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TW202025864A (zh
Inventor
安德魯 恩蓋葉
麥可Ｇ 千范
劉璐
安諾庫瑪 瑞爾洛
Original Assignee
美商應用材料股份有限公司
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Publication of TW202025864A publication Critical patent/TW202025864A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H1/0007—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of radio frequency interference filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H2007/013—Notch or bandstop filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW108140075A 2018-11-09 2019-11-05 用於處理腔室的射頻濾波器系統 TWI848999B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862758362P 2018-11-09 2018-11-09
US62/758,362 2018-11-09

Publications (2)

Publication Number Publication Date
TW202025864A TW202025864A (zh) 2020-07-01
TWI848999B true TWI848999B (zh) 2024-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108140075A TWI848999B (zh) 2018-11-09 2019-11-05 用於處理腔室的射頻濾波器系統

Country Status (6)

Country Link
US (1) US10840062B2 (https=)
JP (1) JP7455825B2 (https=)
KR (1) KR102765819B1 (https=)
CN (1) CN112913140B (https=)
TW (1) TWI848999B (https=)
WO (1) WO2020096723A1 (https=)

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US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
KR20240015167A (ko) 2014-10-17 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
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US11361941B2 (en) * 2020-06-19 2022-06-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN113921360B (zh) * 2020-07-10 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置中的加热装置及抗射频干扰方法
KR102603678B1 (ko) * 2020-10-13 2023-11-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US12198908B2 (en) * 2021-05-11 2025-01-14 Applied Materials, Inc. Magnetically coupled RF filter for substrate processing chambers
KR102770730B1 (ko) * 2021-12-30 2025-02-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN115979533A (zh) * 2022-11-17 2023-04-18 北京北方华创微电子装备有限公司 漏率检测方法及半导体工艺设备
KR20250074015A (ko) * 2023-11-20 2025-05-27 피에스케이 주식회사 기판 처리 장치, 기판 처리 장치의 제어 방법 및 기판 처리 방법

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Also Published As

Publication number Publication date
WO2020096723A1 (en) 2020-05-14
TW202025864A (zh) 2020-07-01
CN112913140B (zh) 2024-09-03
JP2022512914A (ja) 2022-02-07
KR20210076154A (ko) 2021-06-23
KR102765819B1 (ko) 2025-02-07
CN112913140A (zh) 2021-06-04
US10840062B2 (en) 2020-11-17
JP7455825B2 (ja) 2024-03-26
US20200152423A1 (en) 2020-05-14

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