TWI843491B - 次氯酸生成用電極 - Google Patents
次氯酸生成用電極 Download PDFInfo
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- TWI843491B TWI843491B TW112110402A TW112110402A TWI843491B TW I843491 B TWI843491 B TW I843491B TW 112110402 A TW112110402 A TW 112110402A TW 112110402 A TW112110402 A TW 112110402A TW I843491 B TWI843491 B TW I843491B
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- hypochlorous acid
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- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 title claims abstract description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000002131 composite material Substances 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 29
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910003450 rhodium oxide Inorganic materials 0.000 claims abstract description 15
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 14
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000002504 iridium compounds Chemical class 0.000 claims abstract description 11
- 150000003482 tantalum compounds Chemical class 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 10
- 150000003304 ruthenium compounds Chemical class 0.000 claims abstract description 10
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 235000020679 tap water Nutrition 0.000 claims description 5
- 239000008399 tap water Substances 0.000 claims description 5
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- 235000020681 well water Nutrition 0.000 claims description 2
- 239000002349 well water Substances 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 abstract description 15
- 239000010948 rhodium Substances 0.000 abstract description 15
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 description 13
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 12
- 239000002243 precursor Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 229910010977 Ti—Pd Inorganic materials 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- JVOQKOIQWNPOMI-UHFFFAOYSA-N ethanol;tantalum Chemical compound [Ta].CCO JVOQKOIQWNPOMI-UHFFFAOYSA-N 0.000 description 1
- GSNZLGXNWYUHMI-UHFFFAOYSA-N iridium(3+);trinitrate Chemical compound [Ir+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GSNZLGXNWYUHMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- -1 platinum-iridium oxide-ruthenium oxide-titanium oxide Chemical compound 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SONJTKJMTWTJCT-UHFFFAOYSA-K rhodium(iii) chloride Chemical group [Cl-].[Cl-].[Cl-].[Rh+3] SONJTKJMTWTJCT-UHFFFAOYSA-K 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
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- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
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- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
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Abstract
本發明為提供一種次氯酸生成用電極，其係其實質上不包含銠之次氯酸生成用電極，其係在其性能方面不劣於含銠電極，並且耐久性超過含銠電極。
本發明的解決手段為電極在對包含氯化物離子的水進行電解而生成次氯酸時使用，該電極的特徵在於，具有：電極基體，其由鈦或鈦合金構成；以及複合層而成，其與前述電極基體電接合，前述複合層包含有銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和/或鉑，且不包含氧化銠，該電極在其次氯酸水生成能力及耐久性方面優異。
Description
本發明係關於用於對包含氯化物離子的水進行電解而生成次氯酸的電極，詳細地說，係關於用於生成能夠利用於殺菌等的次氯酸水的電極。
如果對包含氯化物離子的水(例如，自來水、井水)進行電解時，則在陽極產生氯，由該氯和水生成次氯酸水。由於該次氯酸的殺菌性，所以生成的次氯酸水被廣泛地利用於身體、食品、物品等的殺菌。
作為生成次氯酸水的電極，為了即使是如自來水等那樣的氯化物離子濃度比較低的水，也能夠高效地生成次氯酸，而提出了各種組成的電極。
例如，日本特開2009-052069號公報(專利文獻1)提案有在由鈦或鈦合金構成的導電性基體上形成了由鉑、氧化銥、氧化銠及氧化鉭的複合體構成的電極觸媒層的電極。另外，日本特開2013-142166號公報(專利文獻2)提案有形成了由與專利文獻1不同的組成的鉑、氧化銥、氧化銠及氧化鉭的複合體構成的電極觸媒層的電極。根據此等電極，從氯化物離子濃度比較低的水也能夠高效地生成次氯酸水。
專利文獻1及2所揭示的電極所包含的銠是所渭的稀有金屬，其產量少，因此在價格方面也是比較高價的金屬元素。
[專利文獻1]日本特開2009-052069號公報
[專利文獻2]日本特開2013-142166號公報
[發明欲解決之問題]
本發明人現在找出了在其性能方面不劣於含銠電極，並且在耐久性方面超過含銠電極的次氯酸生成用電極的組成。本發明就是基於上述見解的發明。
因此，本發明的目的在於，提供實質上不包含氧化銠的次氯酸生成用電極。並且，本發明的目的在於，提供具有藉由本發明的電極的次氯酸水的製造裝置及使用了藉由本發明的電極的次氯酸水的調製方法。
[用以解決發明手段]
而且，藉由本發明的電極在對包含氯化物離子的水進行電解，而生成次氯酸時使用，該電極的特徵在於，具有：電極基體，其由鈦或鈦合金構成；以及複合層而成，其與前述電極基體電接合，前述複合層包含有銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和/或鉑，且不包含氧化銠。
電極的基本構造
藉由本發明的電極具有下述基本構造，該基本構造為，至少具備：電極基體，其由鈦或鈦合金構成；以及複合層而成，其與該基體電接合。而且，特徵在於，與基體接合的複合層包含有銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和/或鉑，且不包含氧化銠。
在本發明中「不包含氧化銠」是指容許存在作為痕跡或者不可避免成分的氧化銠，但不包含會對電極的性質、特性帶來影響的量的氧化銠或其化合物。在本發明中，例如不容許存在大於或等於1mol%的氧化銠。根據本發明，複合層設為包含銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和鉑，不包含氧化銠的組成，由此具有不劣於包含氧化銠的現有的電極(例如，專利文獻1或2所記載的電極)的次氯酸的生成能力。另外，由於銠的價格高，所以取代為價格比銠低的釕或鉑在電極的製造成本方面是極其有利的。
根據本發明的優選的態樣，銥化合物、鉭化合物、釕化合物的優選的具體例是該等的氧化物，其結果，複合層優選設為下述組成，即，由氧化銥、氧化鉭、氧化釕和鉑構成，對於其他元素或者化合物，以不超過其痕跡或者不可避免的量包含該等。
電極基體
在本發明中，作為電極基體，使用鈦或鈦合金。作為鈦合金，能夠使用以鈦力主體的具有耐腐蝕性的導電性的合金，例如，舉出由Ti-Ta-Nb、Ti-Pd、Ti-Zr、Ti-Al等的組合構成的、通常作為電極材料使用的鈦基合金。此等的電極材料能夠加工成板狀、有孔板狀、棒狀、網板狀等期望形狀而作為電極基材使用。此外，在本發明中，不排除在電極基體的表面形成氧化鈦膜。
複合層
藉由本發明的電極的特徵在於，具有與上述的電極基體電接合的複合層，該複合層如上所述，包含有銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和/或鉑，且不包含氧化銠。藉由本發明的電極的複合層的特徵在於不包含氧化銠，但本發明所提案的複合層的組成也能夠理解力將以往公知的含銠電極的銠取代為釕和/或鉑後的組成。因此，藉由本發明的電極的複合層的組成也可以決定為在以往公知的或者後來提出的包含銠的次氯酸生成用電極的組分中將銠取代為釕和/或鉑後得到的組成。
根據本發明的優選的態樣，作為複合層的一個組成，通過金屬換算，銥優選能夠以30〜80mol%的範圍包含，更優選的下限是32mol%，另外，更優選的上限是60mol%，進一步優選的上限是43mol%。
另外，鉭通過金屬換算，優選能夠以6〜53mol%的範圍包含，更優選的下限是22mol%，進一步優選的下限是25mol%，另外，更優選的上限是60mol%，進一步優選的上限是43mol%。
另外，釕通過金屬換算，優選能夠以0〜97mol%的範圍包含，更優選的下限是7mol%，進一步優選的下限是8mol%，另外，更優選的上限是22mol%。
鉑優選能夠以0〜97mol%的範圍包含，更優選的下限是7mol%，進一步優選的下限是10mol%，另外，更優選的上限是23mol%。
根據本發明的更優選的態樣，作為複合層的一個組成，通過金屬換算，設為包含銥32〜43mol%、鉭25〜36mol%、釕8〜22mol%和鉑10〜23mol%。
並且，根據本發明的一個態樣，優選以11〜19mol%的量包含釕，以13〜20mol%的量包含鉑。並且，根據本發明的其他態樣，釕和鉑的合計通過金屬換算，優選設為24mol%〜39mol%。另外，根據其他態樣，釕和鉑優選通過金屬換算以大致相同的比率包含。
電極的用途
藉由本發明的電極在次氯酸的生成能力及電極的耐久性方面優異。具體地說，藉由本發明的電極具有能夠以0.2ppm以上的濃度生成次氯酸的性能，並且該性能經過通電時間500小時仍得到維持。
另外，根據藉由本發明的電極，即使以如自來水那樣的氯化物離子的濃度比較低的水作為對象，也能夠高效地生成次氯酸水。但是，如果需要，則也可以在水中添加食鹽，這樣的態樣並不從本發明被排除在外。
另外，在對水進行電解而生成次氯酸時，為了抑制產生向電極表面的附著物，而通常進行對電極的極性進行切換的操作。雖然該操作成為使電極劣化的原因，但藉由本發明的電極得到下述優點，即，即使在高頻度的極性切換的條件下，也能夠長期間維持其性能。
另外，藉由本發明的電極通常能夠以6〜20A/dm
2的範圍的程度的電流密度進行利用。一般來說，在高電流密度下生成效率提高，但由於觸媒的消耗變得急遽，所以耐久性降低。但是，藉由本發明的電極即使在如上所述20A/dm
2的高電流密度的條件下也能夠利用。
作為藉由本發明的電極的具體用途，舉出作為殺菌用途的家庭用或者商用的次氯酸製造裝置的電極使用。另外，能夠作為對馬桶座清洗噴嘴供給的次氯酸水的生成裝置的電極使用。並且，優選用於生成廚房、洗臉台的除菌水。
電極的製造方法
藉由本發明的電極，如上所述，能夠理解力具有在以往公知的包含銠的電極中將銠取代為釕和/或鉑後的組成的複合層，因此其製造優選除了將銠取代為釕和/或鉑以外，能夠通過與現有的電極相同的方法進行製造。具體地說，能夠根據專利文獻1或2的記載進行製造。
如果具體地示出複合層的優選的製造方法，則如下所述。即，能夠通過將構成複合層的銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物及鉑的前驅物塗佈於電極基體，使此等前驅物在適當的條件下進行分解(例如進行熱分解)，從而分別得到銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物及鉑，由此進行製造。
作為前驅物的具體例，作為銥或銥的化合物的前驅物，例如舉出氯銥酸、氯化銥、硝酸銥等，特別優選使用氯銥酸。
另外，作為鉭或鉭的化合物的前驅物，舉出氯化鉭、乙醇鉭等，特別優選使用乙醇鉭。
作為鉑的前驅物，舉出氯鉑酸、氯化鉑等，特別優選使用氯鉑酸。
使以上的前驅物溶解或者分散於適當的溶劑，將其塗佈於電極基體，然後進行乾燥，進而置於使上述前驅物成為銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物及鉑的條件下。
優選將上述前驅物分散或者溶解於低級醇(例如，甲醇、乙醇、丙醇、丁醇等或該等的混合物)。然後，例如在以大約20℃〜大約150℃的範圍內的溫度進行乾燥後，在含氧氣體環境中，例如在空氣中燒成。燒成例如能夠通過在電氣爐、氣體爐、紅外線爐等適當的加熱爐中，一般來說加熱至大約450℃〜大約600℃，優選加熱至大約500〜大約550℃的範圍內的溫度而進行。以上的塗佈及燒成步驟可以重複多次。
[實施例]
進一步通過以下的實施例對本發明進行說明，但本發明不受此等實施例限定。
電極的製造
基材的準備
在對與JIS1種類相當的鈦板原材料(t0.5mm×w100mm×l100mm)進行醇清洗後，在20℃的8重量%氫氟酸水溶液中進行了2分鐘處理，而且在120℃的60重量%硫酸水溶液中進行了3分鐘處理。接下來，將鈦基體從硫酸水溶液取出，噴霧出冷水而進行急速冷卻。並且，在20℃的0.3重量%氫氟酸水溶液中浸漬2分鐘後進行水洗。在水洗後，在400℃的大氣中進行1小時加熱處理，在鈦基體表面形成薄的氧化鈦的中間層。
複合層的形成
按照下述方式準備包含用於形成複合層的前驅物的溶液。即，以Pt-Ir-Ru-Ta的組成比成為下述表-1所示的莫耳%的方式分別對調整為釕濃度100g/L的氯化釕的丁醇溶液、調整為銥濃度200g/L的氯銥酸的丁醇溶液、調整為鉭濃度200g/L的乙醇鉭的丁醇溶液和調整為鉑濃度200g/L的氯鉑酸的丁醇溶液進行稱量，接下來，以Ir的金屬換算濃度成為50g/L的方式通過丁醇進行稀釋，調製出下述表所示的實施例1〜8。另外，將上述氯化釕設為氯化銠，調製出不包含鉑及釕前驅物的溶液而作為比較例。
通過吸液管對得到的溶液進行0.27ml稱量，在將其塗佈於該氧化鈦的中間層後，在室溫下進行20分鐘乾燥，並且在550℃的大氣中進行10分鐘燒成。將該塗佈-乾燥-燒成步驟重複6次，製作出在氯化鈦的中間層上鉑-氧化銥-氧化釕-氧化鉭複合層為下述表1所記載的組成的電極。
將實施例1〜8及比較例的電極在室溫下在自來水中，進行重複下述操作即在以9.7A/dm
2電解後切換極性而以
-9.7A/dm
2電解這種操作的電解，通過DPD法對經過一定時間後的電解時的次氯酸濃度重複進行測定，對通過電解而生成的次氯酸濃度小於0.2ppm時的電解時間進行了記錄。其結果，成為下述表1所示那樣。
Claims (8)
- 一種電極，其係在對包含氯化物離子的水進行電解而生成次氯酸時使用的電極，該電極的特徵在於，具有：電極基體，其由鈦或鈦合金構成；以及複合層，其與前述電極基體電接合，前述複合層包含有銥或銥的化合物、鉭或鉭的化合物、釕或釕的化合物和/或鉑，且不包含氧化銠，前述複合層通過金屬換算，包含有銥32~43mol%、鉭25~36mol%、釕8~22mol%以及鉑10~23mol%而成。
- 如請求項1之電極，其中，前述複合層由氧化銥、氧化鉭、氧化釕和鉑構成。
- 如請求項1或2之電極，其中，前述釕為11~19mol%，前述鉑為13~20mol%。
- 如請求項3之電極，其中，前述釕和鉑的合計通過金屬換算為24mol%~39mol%。
- 如請求項1或2之電極，其中，包含前述氯化物離子的水是自來水或者井水。
- 一種次氯酸水生成裝置，其具有如請求項1至5中任一項所記載的電極。
- 一種廁所裝置，其特徵在於，具有生成次氯酸水的裝置，該裝置具有如請求項1至5中任一項之電極。
- 一種製造次氯酸水的方法，該方法包含有下述步驟而成： 準備如請求項1至5中任一項之電極，使前述電極和包含氯化物離子的水接觸。
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