TWI834943B - 覆板及製造覆板之方法 - Google Patents

覆板及製造覆板之方法 Download PDF

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Publication number
TWI834943B
TWI834943B TW110101400A TW110101400A TWI834943B TW I834943 B TWI834943 B TW I834943B TW 110101400 A TW110101400 A TW 110101400A TW 110101400 A TW110101400 A TW 110101400A TW I834943 B TWI834943 B TW I834943B
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TW
Taiwan
Prior art keywords
area
cladding
coating
blank
edge
Prior art date
Application number
TW110101400A
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English (en)
Chinese (zh)
Other versions
TW202136013A (zh
Inventor
萬芬
劉衛軍
Original Assignee
日商佳能股份有限公司
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Publication of TW202136013A publication Critical patent/TW202136013A/zh
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Publication of TWI834943B publication Critical patent/TWI834943B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0015—Production of aperture devices, microporous systems or stamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110101400A 2020-03-30 2021-01-14 覆板及製造覆板之方法 TWI834943B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/834,465 US12136564B2 (en) 2020-03-30 2020-03-30 Superstrate and method of making it
US16/834,465 2020-03-30

Publications (2)

Publication Number Publication Date
TW202136013A TW202136013A (zh) 2021-10-01
TWI834943B true TWI834943B (zh) 2024-03-11

Family

ID=77854686

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110101400A TWI834943B (zh) 2020-03-30 2021-01-14 覆板及製造覆板之方法

Country Status (5)

Country Link
US (1) US12136564B2 (https=)
JP (1) JP7504035B2 (https=)
KR (1) KR102946143B1 (https=)
CN (1) CN113471101B (https=)
TW (1) TWI834943B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11562924B2 (en) * 2020-01-31 2023-01-24 Canon Kabushiki Kaisha Planarization apparatus, planarization process, and method of manufacturing an article
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same
US11878935B1 (en) * 2022-12-27 2024-01-23 Canon Kabushiki Kaisha Method of coating a superstrate
US20240411225A1 (en) * 2023-06-09 2024-12-12 Canon Kabushiki Kaisha System including heating means and actinic radiation source and a method of using the same
US20260022241A1 (en) * 2024-07-19 2026-01-22 Canon Kabushiki Kaisha Curable composition and coated superstrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2163367A1 (en) * 2007-06-04 2010-03-17 Scivax Corporation Form, microprocessed article, and their manufacturing methods
US20170365470A1 (en) * 2015-06-16 2017-12-21 Toshiba Memory Corporation Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
TW201839115A (zh) * 2016-08-12 2018-11-01 美商因普利亞公司 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法
TW201946162A (zh) * 2018-03-15 2019-12-01 美商應用材料股份有限公司 用於半導體元件封裝製造製程的平坦化

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918221B2 (ja) 1997-03-12 2007-05-23 ソニー株式会社 保護膜形成装置及び保護膜形成方法
US6140254A (en) 1998-09-18 2000-10-31 Alliedsignal Inc. Edge bead removal for nanoporous dielectric silica coatings
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7824846B2 (en) * 2007-09-19 2010-11-02 International Business Machines Corporation Tapered edge bead removal process for immersion lithography
JP4609562B2 (ja) * 2008-09-10 2011-01-12 日立電線株式会社 微細構造転写用スタンパ及びその製造方法
RU2449415C1 (ru) * 2010-10-25 2012-04-27 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Способ изготовления высоковольтного силового полупроводникового прибора
JP6083565B2 (ja) * 2013-04-09 2017-02-22 パナソニックＩｐマネジメント株式会社 微細構造体の製造方法
US10354858B2 (en) 2013-12-31 2019-07-16 Texas Instruments Incorporated Process for forming PZT or PLZT thinfilms with low defectivity
JP2015170828A (ja) * 2014-03-11 2015-09-28 富士フイルム株式会社 プラズマエッチング方法およびパターン化基板の製造方法
JP6385131B2 (ja) * 2014-05-13 2018-09-05 株式会社ディスコ ウェーハの加工方法
JP6649600B2 (ja) 2015-08-03 2020-02-19 三菱自動車工業株式会社 電動車両の回生制御装置
JP2019016616A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 インプリントモールド及びその製造方法、並びに配線基板の製造方法
KR102447277B1 (ko) 2017-11-17 2022-09-26 삼성전자주식회사 스핀 코터 및 이를 구비하는 기판처리 장치와 기판처리 시스템
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
KR102810856B1 (ko) * 2019-09-02 2025-05-20 삼성전자주식회사 반도체 소자 제조 장치, 반도체 소자 검사 장치 및 반도체 소자 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2163367A1 (en) * 2007-06-04 2010-03-17 Scivax Corporation Form, microprocessed article, and their manufacturing methods
US20170365470A1 (en) * 2015-06-16 2017-12-21 Toshiba Memory Corporation Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
TW201839115A (zh) * 2016-08-12 2018-11-01 美商因普利亞公司 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法
TW201946162A (zh) * 2018-03-15 2019-12-01 美商應用材料股份有限公司 用於半導體元件封裝製造製程的平坦化

Also Published As

Publication number Publication date
CN113471101A (zh) 2021-10-01
TW202136013A (zh) 2021-10-01
US12136564B2 (en) 2024-11-05
US20210305082A1 (en) 2021-09-30
JP7504035B2 (ja) 2024-06-21
KR20210122100A (ko) 2021-10-08
CN113471101B (zh) 2025-10-28
KR102946143B1 (ko) 2026-04-01
JP2021160352A (ja) 2021-10-11

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