JP7504035B2 - スーパーストレート及びその製造方法 - Google Patents

スーパーストレート及びその製造方法 Download PDF

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Publication number
JP7504035B2
JP7504035B2 JP2021003721A JP2021003721A JP7504035B2 JP 7504035 B2 JP7504035 B2 JP 7504035B2 JP 2021003721 A JP2021003721 A JP 2021003721A JP 2021003721 A JP2021003721 A JP 2021003721A JP 7504035 B2 JP7504035 B2 JP 7504035B2
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JP
Japan
Prior art keywords
superstrate
blank
superstraight
coating
microns
Prior art date
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Active
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JP2021003721A
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English (en)
Japanese (ja)
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JP2021160352A5 (https=
JP2021160352A (ja
Inventor
ワン フェン
リウ ウェイジュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JP2021160352A publication Critical patent/JP2021160352A/ja
Publication of JP2021160352A5 publication Critical patent/JP2021160352A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0015—Production of aperture devices, microporous systems or stamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021003721A 2020-03-30 2021-01-13 スーパーストレート及びその製造方法 Active JP7504035B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/834,465 US12136564B2 (en) 2020-03-30 2020-03-30 Superstrate and method of making it
US16/834,465 2020-03-30

Publications (3)

Publication Number Publication Date
JP2021160352A JP2021160352A (ja) 2021-10-11
JP2021160352A5 JP2021160352A5 (https=) 2023-10-17
JP7504035B2 true JP7504035B2 (ja) 2024-06-21

Family

ID=77854686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021003721A Active JP7504035B2 (ja) 2020-03-30 2021-01-13 スーパーストレート及びその製造方法

Country Status (5)

Country Link
US (1) US12136564B2 (https=)
JP (1) JP7504035B2 (https=)
KR (1) KR102946143B1 (https=)
CN (1) CN113471101B (https=)
TW (1) TWI834943B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11562924B2 (en) * 2020-01-31 2023-01-24 Canon Kabushiki Kaisha Planarization apparatus, planarization process, and method of manufacturing an article
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same
US11878935B1 (en) * 2022-12-27 2024-01-23 Canon Kabushiki Kaisha Method of coating a superstrate
US20240411225A1 (en) * 2023-06-09 2024-12-12 Canon Kabushiki Kaisha System including heating means and actinic radiation source and a method of using the same
US20260022241A1 (en) * 2024-07-19 2026-01-22 Canon Kabushiki Kaisha Curable composition and coated superstrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014204068A (ja) 2013-04-09 2014-10-27 パナソニック株式会社 微細構造体、その製造方法、及び微細構造金型
JP2015170828A (ja) 2014-03-11 2015-09-28 富士フイルム株式会社 プラズマエッチング方法およびパターン化基板の製造方法

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JP3918221B2 (ja) 1997-03-12 2007-05-23 ソニー株式会社 保護膜形成装置及び保護膜形成方法
US6140254A (en) 1998-09-18 2000-10-31 Alliedsignal Inc. Edge bead removal for nanoporous dielectric silica coatings
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
JP5456465B2 (ja) 2007-06-04 2014-03-26 丸善石油化学株式会社 微細加工品およびその製造方法
US7824846B2 (en) * 2007-09-19 2010-11-02 International Business Machines Corporation Tapered edge bead removal process for immersion lithography
JP4609562B2 (ja) * 2008-09-10 2011-01-12 日立電線株式会社 微細構造転写用スタンパ及びその製造方法
RU2449415C1 (ru) * 2010-10-25 2012-04-27 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Способ изготовления высоковольтного силового полупроводникового прибора
US10354858B2 (en) 2013-12-31 2019-07-16 Texas Instruments Incorporated Process for forming PZT or PLZT thinfilms with low defectivity
JP6385131B2 (ja) * 2014-05-13 2018-09-05 株式会社ディスコ ウェーハの加工方法
JP2017010962A (ja) * 2015-06-16 2017-01-12 株式会社東芝 デバイス基板およびデバイス基板の製造方法並びに半導体装置の製造方法
JP6649600B2 (ja) 2015-08-03 2020-02-19 三菱自動車工業株式会社 電動車両の回生制御装置
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
JP2019016616A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 インプリントモールド及びその製造方法、並びに配線基板の製造方法
KR102447277B1 (ko) 2017-11-17 2022-09-26 삼성전자주식회사 스핀 코터 및 이를 구비하는 기판처리 장치와 기판처리 시스템
JP7258906B2 (ja) 2018-03-15 2023-04-17 アプライド マテリアルズ インコーポレイテッド 半導体素子パッケージ製造プロセスための平坦化
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
KR102810856B1 (ko) * 2019-09-02 2025-05-20 삼성전자주식회사 반도체 소자 제조 장치, 반도체 소자 검사 장치 및 반도체 소자 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014204068A (ja) 2013-04-09 2014-10-27 パナソニック株式会社 微細構造体、その製造方法、及び微細構造金型
JP2015170828A (ja) 2014-03-11 2015-09-28 富士フイルム株式会社 プラズマエッチング方法およびパターン化基板の製造方法

Also Published As

Publication number Publication date
CN113471101A (zh) 2021-10-01
TW202136013A (zh) 2021-10-01
US12136564B2 (en) 2024-11-05
US20210305082A1 (en) 2021-09-30
TWI834943B (zh) 2024-03-11
KR20210122100A (ko) 2021-10-08
CN113471101B (zh) 2025-10-28
KR102946143B1 (ko) 2026-04-01
JP2021160352A (ja) 2021-10-11

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