TWI832819B - 包括引線框架及絕緣材料的發光裝置 - Google Patents

包括引線框架及絕緣材料的發光裝置 Download PDF

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Publication number
TWI832819B
TWI832819B TW107124773A TW107124773A TWI832819B TW I832819 B TWI832819 B TW I832819B TW 107124773 A TW107124773 A TW 107124773A TW 107124773 A TW107124773 A TW 107124773A TW I832819 B TWI832819 B TW I832819B
Authority
TW
Taiwan
Prior art keywords
lead frame
led
molding
pillar
package
Prior art date
Application number
TW107124773A
Other languages
English (en)
Chinese (zh)
Other versions
TW201916413A (zh
Inventor
李舒
翠 巫
Original Assignee
美商亮銳公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/652,603 external-priority patent/US10381534B2/en
Application filed by 美商亮銳公司 filed Critical 美商亮銳公司
Publication of TW201916413A publication Critical patent/TW201916413A/zh
Application granted granted Critical
Publication of TWI832819B publication Critical patent/TWI832819B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
TW107124773A 2017-07-18 2018-07-18 包括引線框架及絕緣材料的發光裝置 TWI832819B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/652,603 US10381534B2 (en) 2017-07-18 2017-07-18 Light emitting device including a lead frame and an insulating material
US15/652,603 2017-07-18
EP17184498 2017-08-02
EP17184498.8 2017-08-02

Publications (2)

Publication Number Publication Date
TW201916413A TW201916413A (zh) 2019-04-16
TWI832819B true TWI832819B (zh) 2024-02-21

Family

ID=63047471

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107124773A TWI832819B (zh) 2017-07-18 2018-07-18 包括引線框架及絕緣材料的發光裝置

Country Status (6)

Country Link
EP (2) EP4583672A3 (https=)
JP (2) JP2020527864A (https=)
KR (1) KR102408302B1 (https=)
CN (1) CN111357124A (https=)
TW (1) TWI832819B (https=)
WO (1) WO2019018193A1 (https=)

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* Cited by examiner, † Cited by third party
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US11335842B2 (en) * 2018-02-14 2022-05-17 Maven Optronics Co., Ltd. Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same
JP2020167366A (ja) * 2019-02-26 2020-10-08 ローム株式会社 半導体発光装置および半導体発光装置の製造方法
DE102020107409B4 (de) * 2020-03-18 2023-11-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse für ein optoelektronisches halbleiterbauelement und optoelektronisches halbleiterbauelement
CN114628263B (zh) * 2022-05-13 2022-08-05 威海三维曲板智能装备有限公司 一种光电混合封装结构及其制造方法

Citations (4)

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US20100176407A1 (en) * 2009-01-15 2010-07-15 Advanced Semiconductor Engineering, Inc. Method for manufacturing light emitting diode package and package structure thereof
US20110241028A1 (en) * 2010-03-30 2011-10-06 Hyung Hwa Park Light emitting device and light unit having the same
US20130343067A1 (en) * 2011-02-28 2013-12-26 Nichia Corporation Light emitting device
JP2015181203A (ja) * 2015-07-07 2015-10-15 大日本印刷株式会社 樹脂付リードフレーム、半導体装置および照明装置

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US20070126020A1 (en) * 2005-12-03 2007-06-07 Cheng Lin High-power LED chip packaging structure and fabrication method thereof
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
MX2010013220A (es) * 2008-07-24 2011-03-29 Ind Negromex S A De C V Procedimientos para elaborar silano, silice hidrofobizado, lote maestro de silice y productos de caucho.
KR101047603B1 (ko) * 2009-03-10 2011-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
JP2010212508A (ja) * 2009-03-11 2010-09-24 Sony Corp 発光素子実装用パッケージ、発光装置、バックライトおよび液晶表示装置
JP5509878B2 (ja) * 2010-01-27 2014-06-04 凸版印刷株式会社 Ｌｅｄ発光素子用リードフレーム基板の製造方法
JP5618189B2 (ja) * 2010-07-30 2014-11-05 大日本印刷株式会社 樹脂付リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
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JP5818149B2 (ja) * 2011-09-09 2015-11-18 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置、樹脂付リードフレームの製造方法および半導体装置の製造方法
KR20130098048A (ko) * 2012-02-27 2013-09-04 엘지이노텍 주식회사 발광소자 패키지
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JP6176101B2 (ja) * 2013-12-17 2017-08-09 日亜化学工業株式会社 樹脂パッケージ及び発光装置
KR102409220B1 (ko) * 2014-01-07 2022-06-16 루미리즈 홀딩 비.브이. 발광 디바이스 패키지
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JP6262578B2 (ja) * 2014-03-18 2018-01-17 スタンレー電気株式会社 発光装置
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US20100176407A1 (en) * 2009-01-15 2010-07-15 Advanced Semiconductor Engineering, Inc. Method for manufacturing light emitting diode package and package structure thereof
US20110241028A1 (en) * 2010-03-30 2011-10-06 Hyung Hwa Park Light emitting device and light unit having the same
US20130343067A1 (en) * 2011-02-28 2013-12-26 Nichia Corporation Light emitting device
JP2015181203A (ja) * 2015-07-07 2015-10-15 大日本印刷株式会社 樹脂付リードフレーム、半導体装置および照明装置

Also Published As

Publication number Publication date
JP2020527864A (ja) 2020-09-10
KR20200033889A (ko) 2020-03-30
JP7605400B2 (ja) 2024-12-24
EP3656001A1 (en) 2020-05-27
KR102408302B1 (ko) 2022-06-14
TW201916413A (zh) 2019-04-16
EP4583672A2 (en) 2025-07-09
JP2023090921A (ja) 2023-06-29
CN111357124A (zh) 2020-06-30
EP4583672A3 (en) 2025-09-24
WO2019018193A1 (en) 2019-01-24

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