JP2020527864A - リードフレーム及び絶縁材料を含む発光デバイス - Google Patents
リードフレーム及び絶縁材料を含む発光デバイス Download PDFInfo
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- JP2020527864A JP2020527864A JP2020502262A JP2020502262A JP2020527864A JP 2020527864 A JP2020527864 A JP 2020527864A JP 2020502262 A JP2020502262 A JP 2020502262A JP 2020502262 A JP2020502262 A JP 2020502262A JP 2020527864 A JP2020527864 A JP 2020527864A
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- lead frame
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- 239000012774 insulation material Substances 0.000 title 1
- 238000000465 moulding Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 20
- 239000008393 encapsulating agent Substances 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 23
- 239000004332 silver Substances 0.000 abstract description 23
- 239000004020 conductor Substances 0.000 abstract description 6
- 238000002845 discoloration Methods 0.000 abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 238000007747 plating Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical class OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (14)
- 第2のリードフレーム部から電気的に絶縁された第1のリードフレーム部を有するリードフレームであり、前記第1のリードフレーム部は、前記第1のリードフレーム部の下面より上方に隆起した第1のピラーを含み、前記第2のリードフレーム部は、前記第2のリードフレーム部の下面より上方に隆起した第2のピラーを含む、リードフレームと、
前記リードフレーム部の前記下面を覆い、且つ前記第1のピラー及び前記第2のピラーの少なくとも一部を露出させる成形物であり、高度に光反射性且つ電気絶縁性の材料を有する成形物と、
前記第2のピラーのみの上に配置されたLEDデバイスと、
前記LEDデバイス上に形成された第1のコンタクトであり、第1のワイヤボンドを介して前記第1のピラーに電気的に結合された第1のコンタクトと、
前記LEDデバイス上に形成された第2のコンタクトであり、第2のワイヤボンドを介して前記第2のピラーに電気的に結合された第2のコンタクトと、
を有する発光ダイオード(LED)パッケージ。 - 前記成形物は、ウェルを形成するように整形された側壁を含む、
請求項1に記載のLEDパッケージ。 - 前記ウェル内に配置された封入材であり、前記LEDデバイスを物理的に保護するように構成された封入材、
を更に有する請求項2に記載のLEDパッケージ。 - 前記第2のピラーは、前記LEDデバイスの幅よりも大きい幅を持つ、請求項1に記載のLEDパッケージ。
- 前記成形物はシリコーン材料を有する、請求項1に記載のLEDパッケージ。
- 前記成形物の下並びに前記第1のピラー及び前記第2のピラーのそれぞれの露出された表面上の双方で、前記リードフレームの上に配置されためっき金属、
を更に有する請求項1に記載のLEDパッケージ。 - 前記第1のピラー及び前記第2のピラーの上に配置されているが、前記成形物の下の前記リードフレーム上には配置されていないめっき金属、
を更に有する請求項1に記載のLEDパッケージ。 - 発光ダイオード(LED)パッケージを形成する方法であって、
第2のリードフレーム部から電気的に絶縁された第1のリードフレーム部を有するリードフレームを形成し、前記第1のリードフレーム部は、前記第1のリードフレーム部の下面より上方に隆起した第1のピラーを含み、前記第2のリードフレーム部は、前記第2のリードフレーム部の下面より上方に隆起した第2のピラーを含み、
前記リードフレーム上及び前記リードフレームの周りに成形物を形成し、該成形物は、前記リードフレーム部の前記下面を覆い、且つ前記第1のピラー及び前記第2のピラーの少なくとも一部を露出させ、
前記第2のピラーのみの上にLEDデバイスをマウントし、
前記LEDデバイスの第1のコンタクトを、第1のワイヤボンドを介して前記第1のピラーに電気的に結合し、
前記LEDデバイスの第2のコンタクトを、第2のワイヤボンドを介して前記第2のピラーに電気的に結合する、
ことを有する方法。 - 前記成形物を形成することは、
ウェルを形成するように整形された側壁を含むように前記成形物を形成する
ことを有する、請求項8に記載の方法。 - 前記ウェル内に、前記LEDデバイスを物理的に保護するように構成された封入材を配置する、
ことを更に有する請求項9に記載の方法。 - 前記第2のピラーは、前記LEDデバイスの幅よりも大きい幅を持つ、請求項8に記載の方法。
- 前記成形物はシリコーン材料を有する、請求項8に記載の方法。
- 前記成形物の下並びに前記第1のピラー及び前記第2のピラーの露出された表面上の双方で、前記リードフレームの上に金属をめっきする、
ことを更に有する請求項8に記載の方法。 - 前記成形物の下の前記リードフレーム上にはなしで、前記第1のピラー及び前記第2のピラーの上に金属をめっきする、
ことを更に有する請求項8に記載の方法。
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US15/652,603 US10381534B2 (en) | 2017-07-18 | 2017-07-18 | Light emitting device including a lead frame and an insulating material |
US15/652,603 | 2017-07-18 | ||
EP17184498.8 | 2017-08-02 | ||
EP17184498 | 2017-08-02 | ||
PCT/US2018/041774 WO2019018193A1 (en) | 2017-07-18 | 2018-07-12 | LIGHT EMITTING DEVICE COMPRISING A CONNECTION GRID AND INSULATING MATERIAL |
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US11393960B2 (en) | 2019-02-26 | 2022-07-19 | Rohm Co., Ltd. | Semiconductor light-emitting device and method for manufacturing the same |
CN114628263B (zh) * | 2022-05-13 | 2022-08-05 | 威海三维曲板智能装备有限公司 | 一种光电混合封装结构及其制造方法 |
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EP3656001A1 (en) | 2020-05-27 |
WO2019018193A1 (en) | 2019-01-24 |
TWI832819B (zh) | 2024-02-21 |
JP2023090921A (ja) | 2023-06-29 |
TW201916413A (zh) | 2019-04-16 |
KR102408302B1 (ko) | 2022-06-14 |
KR20200033889A (ko) | 2020-03-30 |
CN111357124A (zh) | 2020-06-30 |
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