TWI831439B - Optical sensor - Google Patents

Optical sensor Download PDF

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TWI831439B
TWI831439B TW111140706A TW111140706A TWI831439B TW I831439 B TWI831439 B TW I831439B TW 111140706 A TW111140706 A TW 111140706A TW 111140706 A TW111140706 A TW 111140706A TW I831439 B TWI831439 B TW I831439B
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light
shielding layer
electrode
sensing structure
thin film
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TW202332026A (en
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林欣龍
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友達光電股份有限公司
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    • H01L27/14605—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H01L27/14612—
    • H01L27/1462—
    • H01L27/14636—
    • H01L27/14643—

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Abstract

An optical sensor includes a substrate, a gate line, a data line, a thin film transistor, an optical sensor structure, a common electrode line and a first shading layer. The gate line is located over the substrate. The data line is located over the substrate. The gate of the thin film transistor connects to the gate line. The drain of the thin film transistor connects to the data line. A bottom electrode of the optical sensor structure is electrically connected to a source of the thin film transistor. The common electrode line is located over the substrate. The common electrode line is electronically connected to the top electrode of the light sensor structure. The first shading layer is located on the substrate. A top surface of the first shading layer is lower than a top layer of the light sensor structure. In the top view, at least a part of the first shading layer is located between the data line and the light sensor structure.

Description

光感測器light sensor

本揭露是有關於一種光感測器。The present disclosure relates to a light sensor.

光感測器普遍應用於智慧型手機、筆記型電腦或平板電腦等電子裝置。除此之外，光感測器也應用於醫療診斷工具。舉例來說，配置以接收X光的X光感測器可將通過人體組織的X光轉化為可視畫影像。如何提出一種可以改善影像的品質問題的光感測器，是目前業界亟欲投入研發資源解決的問題之一。Light sensors are commonly used in electronic devices such as smartphones, laptops or tablets. In addition, light sensors are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays can convert X-rays passing through human tissue into a visible image. How to come up with a light sensor that can improve image quality is one of the problems that the industry is currently eager to invest in research and development resources to solve.

有鑑於此，本揭露的一目的在於提出一種可有效解決上述問題的光感測器。In view of this, one purpose of the present disclosure is to provide a light sensor that can effectively solve the above problems.

本揭露是有關於一種光感測器包含基板、閘極線、資料線、薄膜電晶體、光感測結構、共通電極線以及第一遮光層。閘極線位於基板上。資料線位於基板上。薄膜電晶體的閘極電性連接閘極線。薄膜電晶體的汲極電性連接資料線。光感測結構的下電極電性連接薄膜電晶體的源極。共通電極線位於基板上。共通電極線電性連接光感測結構的上電極。第一遮光層位於基板上。第一遮光層的上表面低於光感測結構的上表面。由俯視觀之，第一遮光層至少部分位於資料線與光感測結構之間。The present disclosure relates to a photo sensor including a substrate, a gate line, a data line, a thin film transistor, a light sensing structure, a common electrode line and a first light shielding layer. The gate lines are located on the substrate. The data lines are located on the substrate. The gate of the thin film transistor is electrically connected to the gate line. The drain electrode of the thin film transistor is electrically connected to the data line. The lower electrode of the light sensing structure is electrically connected to the source electrode of the thin film transistor. The common electrode line is located on the substrate. The common electrode is electrically connected to the upper electrode of the light sensing structure. The first light-shielding layer is located on the substrate. The upper surface of the first light-shielding layer is lower than the upper surface of the light sensing structure. Viewed from a top view, the first light-shielding layer is at least partially located between the data line and the light sensing structure.

在目前一些實施方式中，第一遮光層與薄膜電晶體的通道區具有相同的半導體材料。In some current implementations, the first light-shielding layer and the channel region of the thin film transistor have the same semiconductor material.

在目前一些實施方式中，光感測器進一步包含延伸電極。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸延伸電極。延伸電極至少部分覆蓋在第一遮光層上。光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current implementations, the light sensor further includes extended electrodes. The extension electrode extends from the drain electrode of the thin film transistor to below the data line. A portion of the data line extends downward to contact the extension electrode. The extended electrode at least partially covers the first light-shielding layer. The lower electrode of the light sensing structure at least partially covers the first light shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current implementations, the lower electrode of the light sensing structure at least partially covers the first light shielding layer.

在目前一些實施方式中，光感測結構的下電極與第一遮光層分開。In some current implementations, the lower electrode of the light sensing structure is separated from the first light shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current implementations, the lower electrode of the light sensing structure at least partially covers the first light shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上，光感測器進一步包含延伸電極以及第二遮光層。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸延伸電極。延伸電極至少部分覆蓋在第二遮光層上。第一遮光層與第二遮光層分開。In some current implementations, the lower electrode of the light sensing structure at least partially covers the first light shielding layer, and the photo sensor further includes an extended electrode and a second light shielding layer. The extension electrode extends from the drain electrode of the thin film transistor to below the data line. A portion of the data line extends downward to contact the extension electrode. The extended electrode at least partially covers the second light-shielding layer. The first light-shielding layer is separated from the second light-shielding layer.

在目前一些實施方式中，第一遮光層、第二遮光層與薄膜電晶體的通道區具有相同的半導體材料。In some current implementations, the first light-shielding layer, the second light-shielding layer and the channel region of the thin film transistor have the same semiconductor material.

在目前一些實施方式中，光感測器進一步包含延伸電極。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸該延伸電極。延伸電極與第一遮光層分開。光感測結構的下電極也與第一遮光層分開。In some current implementations, the light sensor further includes extended electrodes. The extension electrode extends from the drain electrode of the thin film transistor to below the data line. A portion of the data line extends downward to contact the extended electrode. The extended electrode is separated from the first light-shielding layer. The lower electrode of the light sensing structure is also separated from the first light shielding layer.

在目前一些實施方式中，光感測器進一步包含反射層位於基板下。In some current implementations, the light sensor further includes a reflective layer located under the substrate.

綜上所述，於本揭露的一些實施例的光感測器中，透過使用相同材料在單一製程中形成第一遮光層、第二遮光層以及薄膜電晶體的通道區，進一步簡化製程以及光感測器的結構。適當的將第一遮光層、第二遮光層分配以覆蓋光感測器的不同區域以減少光感測器各區域的光線被基板反射回光感測器內部，導致光感測器的感測結果受到影響。透過適當的隔開第一遮光層、第二遮光層、薄膜電晶體以及光感測結構，以避免第一遮光層與第二遮光層在光感測器內部形成漏電路徑。配合在光感測器上設置反射層、第一遮光層以及第二遮光層以以確保光感測器的感測結果不被反射光所影響。In summary, in the photo sensors according to some embodiments of the present disclosure, the first light-shielding layer, the second light-shielding layer and the channel region of the thin film transistor are formed in a single process by using the same material, which further simplifies the process and optical processing. Sensor structure. Appropriately distribute the first light-shielding layer and the second light-shielding layer to cover different areas of the light sensor to reduce the light from each area of the light sensor being reflected back to the interior of the light sensor by the substrate, causing the sensing of the light sensor Results are affected. By properly separating the first light-shielding layer, the second light-shielding layer, the thin film transistor and the light sensing structure, the first light-shielding layer and the second light-shielding layer are prevented from forming a leakage path inside the photo sensor. A reflective layer, a first light-shielding layer and a second light-shielding layer are arranged on the photo sensor to ensure that the sensing result of the photo sensor is not affected by reflected light.

以下揭露內容提供用於實施所提供標的之不同特徵的許多不同實施例或實例。以下描述部件及佈置之特定實例以簡化本揭露的一些實施方式。當然，此些僅為實例，且並不意欲為限制性的。舉例而言，在如下描述中第一特徵在第二特徵之上或在第二特徵上形成可包括其中第一特徵與第二特徵形成為直接接觸之實施例，且亦可包括其中額外特徵可在第一特徵與第二特徵之間形成而使得第一特徵與第二特徵可不直接接觸的實施例。另外，可在本揭露的各種實例中重複元件符號及/或字母。此重複係出於簡化及清楚目的，且其自身並不表示所論述之各種實施例及/或配置之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify certain embodiments of the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the following description where a first feature is formed on or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which additional features may be Embodiments are formed between a first feature and a second feature such that the first feature and the second feature may not be in direct contact. Additionally, reference symbols and/or letters may be repeated in various examples of the present disclosure. This repetition is for simplicity and clarity and does not in itself represent a relationship between the various embodiments and/or configurations discussed.

應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」或「耦合」係可為二元件間存在其它元件。It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrical connection" or "coupling" may mean the presence of other components between the two components.

本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量(即，測量系統的限制)。例如，「約」可以表示在所述值的一個或多個標準偏差內，或±30％、±20％、±10％、±5％內。再者，本文使用的「約」、「近似」或「實質上」可依光學性質、蝕刻性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable range of deviations from the particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the A specific amount of error associated with a measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately" or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties or other properties, and one standard deviation does not apply to all properties. .

除非另有定義，本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

第1A圖為根據本揭露的一些實施例的光感測器100之示意圖。第1B圖為根據第1A圖中線段B-B’的剖面側視圖。第1C圖為根據第1A圖中線段C-C’的剖面側視圖。請參照第1A圖、第1B圖以及第1C圖，一種光感測器100包含基板110、閘極線120、資料線130、薄膜電晶體140、光感測結構150、共通電極線160以及第一遮光層170。閘極線120位於基板110上。資料線130位於基板110上。薄膜電晶體140的閘極142電性連接閘極線120。薄膜電晶體140的汲極148電性連接資料線130。光感測結構150的下電極152電性連接薄膜電晶體140的源極144。共通電極線160位於基板110上。共通電極線160電性連接光感測結構150的上電極156。第一遮光層170位於基板110上。第一遮光層170的上表面170a低於光感測結構150的上表面150a。由俯視觀之，第一遮光層170至少部分位於資料線130與光感測結構150之間。具體來說，資料線130、薄膜電晶體140、光感測結構150以及共通電極線160可以透過絕緣層（例如，第1B圖或第1C圖中的絕緣層192、194）被分隔，並且在資料線130、薄膜電晶體140、光感測結構150以及共通電極線160的上方亦可以覆蓋絕緣層（例如，第1B圖或第1C圖中的絕緣層196）或形成其他結構。Figure 1A is a schematic diagram of a photo sensor 100 according to some embodiments of the present disclosure. Figure 1B is a cross-sectional side view based on line segment B-B' in Figure 1A. Figure 1C is a cross-sectional side view based on line segment C-C’ in Figure 1A. Referring to Figures 1A, 1B and 1C, a light sensor 100 includes a substrate 110, a gate line 120, a data line 130, a thin film transistor 140, a light sensing structure 150, a common electrode line 160 and a A light shielding layer 170. Gate lines 120 are located on substrate 110 . Data lines 130 are located on the substrate 110 . The gate 142 of the thin film transistor 140 is electrically connected to the gate line 120 . The drain electrode 148 of the thin film transistor 140 is electrically connected to the data line 130 . The lower electrode 152 of the light sensing structure 150 is electrically connected to the source electrode 144 of the thin film transistor 140 . The common electrode line 160 is located on the substrate 110 . The common electrode line 160 is electrically connected to the upper electrode 156 of the light sensing structure 150 . The first light-shielding layer 170 is located on the substrate 110 . The upper surface 170a of the first light shielding layer 170 is lower than the upper surface 150a of the light sensing structure 150. Viewed from a top view, the first light-shielding layer 170 is at least partially located between the data line 130 and the light sensing structure 150 . Specifically, the data line 130, the thin film transistor 140, the light sensing structure 150 and the common electrode line 160 can be separated through an insulating layer (for example, the insulating layers 192 and 194 in Figure 1B or 1C), and in The data line 130, the thin film transistor 140, the light sensing structure 150 and the common electrode line 160 can also be covered with an insulating layer (for example, the insulating layer 196 in Figure 1B or 1C) or other structures can be formed.

請參照第1A圖、第1B圖以及第1C圖，在基板110上設置有閘極線120以及資料線130。在第1A圖所繪示的實施例中，閘極線120為縱向延伸，資料線130為橫向延伸並與一部分的閘極線120重疊。在第1B圖的實施例中，資料線130具有通孔，通孔穿過絕緣層192以及絕緣層194並向下延伸。在一些實施例中，光感測器100進一步包含延伸電極180。請參照第1A圖，延伸電極180從薄膜電晶體140的汲極148延伸至資料線130下。請參照第1B圖，資料線130的通孔向下延伸並接觸延伸電極180。延伸電極180至少部分覆蓋在第一遮光層170上。另一方面，光感測結構150的下電極152亦至少部分覆蓋在第一遮光層170上。Please refer to Figure 1A, Figure 1B and Figure 1C. Gate lines 120 and data lines 130 are provided on the substrate 110. In the embodiment shown in FIG. 1A , the gate lines 120 extend longitudinally, and the data lines 130 extend laterally and overlap with a portion of the gate lines 120 . In the embodiment of FIG. 1B , the data line 130 has a through hole that passes through the insulating layer 192 and the insulating layer 194 and extends downward. In some embodiments, the light sensor 100 further includes an extension electrode 180 . Referring to FIG. 1A , the extension electrode 180 extends from the drain electrode 148 of the thin film transistor 140 to under the data line 130 . Referring to FIG. 1B , the through hole of the data line 130 extends downward and contacts the extended electrode 180 . The extended electrode 180 at least partially covers the first light-shielding layer 170 . On the other hand, the lower electrode 152 of the light sensing structure 150 is also at least partially covered on the first light shielding layer 170 .

請參照第1A圖、第1B圖以及第1C圖，基板110上同時也設置了薄膜電晶體140以及光感測結構150。薄膜電晶體140鄰近閘極線120設置並且其閘極142橫向延伸以與閘極線120電連接（請參照第1A圖）。薄膜電晶體140的源極144與汲極148縱向延伸，並分別連接光感測結構150以及資料線130。同時，基板110上設置的共通電極線160平行資料線130，並橫向地延伸跨越閘極線120以及光感測結構150。請參照第1B圖以及第1C圖，光感測結構150具有上電極156以及位於下電極152以及上電極156之間的光感測層154。具體來說，光感測結構150的下電極152設置在基板110上方。絕緣層192設置於光感測結構150的下電極152上方，其中絕緣層192具有通孔192H，通孔192H暴露部分的下電極152表面。光感測層154填充在通孔192H中並與被通孔192H暴露的部分下電極152表面直接接觸形成電連接。光感測結構150的上電極156直接接觸並設置在光感測層154上。共通電極線160設置有一個通孔向下方延伸，並且與光感測結構150的上電極156電連接。Please refer to Figure 1A, Figure 1B and Figure 1C. The thin film transistor 140 and the light sensing structure 150 are also provided on the substrate 110. The thin film transistor 140 is disposed adjacent to the gate line 120 and its gate 142 extends laterally to be electrically connected to the gate line 120 (please refer to FIG. 1A ). The source electrode 144 and the drain electrode 148 of the thin film transistor 140 extend longitudinally and are connected to the light sensing structure 150 and the data line 130 respectively. At the same time, the common electrode line 160 provided on the substrate 110 is parallel to the data line 130 and extends laterally across the gate line 120 and the light sensing structure 150 . Referring to FIGS. 1B and 1C , the light sensing structure 150 has an upper electrode 156 and a light sensing layer 154 located between the lower electrode 152 and the upper electrode 156 . Specifically, the lower electrode 152 of the light sensing structure 150 is disposed above the substrate 110 . The insulating layer 192 is disposed above the lower electrode 152 of the light sensing structure 150 , wherein the insulating layer 192 has a through hole 192H, and the through hole 192H exposes part of the surface of the lower electrode 152 . The light sensing layer 154 is filled in the through hole 192H and directly contacts the surface of the lower electrode 152 exposed by the through hole 192H to form an electrical connection. The upper electrode 156 of the light sensing structure 150 is directly in contact with and disposed on the light sensing layer 154 . The common electrode line 160 is provided with a through hole extending downward and is electrically connected to the upper electrode 156 of the light sensing structure 150 .

請參照第1A圖、第1B圖以及第1C圖，在一些實施例中，前述部分被延伸電極180所覆蓋的第一遮光層170進一步延伸並且位於資料線130通孔下方區域、資料線130與光感測結構150之間區域以及光感測結構150下方區域。更進一步來說，在一些實施例中光感測結構150的下電極152至少部分覆蓋在第一遮光層170上。參照第1B圖以及第1C圖可以看出，光感測結構150將完全設置在第一遮光層170上方，光感測結構150的上表面150a高於第一遮光層170的上表面170a。參照第1A圖，在俯視角度中觀察可以發現，第一遮光層170的面積大於光感測結構150的下電極152的面積。Please refer to Figure 1A, Figure 1B and Figure 1C. In some embodiments, the first light-shielding layer 170, which is partially covered by the extended electrode 180, further extends and is located in the area below the through hole of the data line 130, the data line 130 and The area between the light sensing structures 150 and the area below the light sensing structure 150 . Furthermore, in some embodiments, the lower electrode 152 of the light sensing structure 150 at least partially covers the first light shielding layer 170 . Referring to Figure 1B and Figure 1C, it can be seen that the light sensing structure 150 will be completely disposed above the first light shielding layer 170, and the upper surface 150a of the light sensing structure 150 is higher than the upper surface 170a of the first light shielding layer 170. Referring to FIG. 1A , from a bird's-eye view, it can be found that the area of the first light-shielding layer 170 is larger than the area of the lower electrode 152 of the light-sensing structure 150 .

同時，第一遮光層170分別與閘極線120以及資料線130部分重疊，但不延伸超過閘極線120或資料線130的另一個邊緣。換句話說，第一遮光層170的覆蓋區域將不會延伸到相鄰的另一個像素單元。由於資料線130以及閘極線120使用的材料為不透光材料（例如，金屬），透過將第一遮光層170與部分的資料線130以及閘極線120重疊，以保證第一遮光層170與資料線130以及閘極線120之間不會有未被覆蓋的透光區域。第一遮光層170將能一定程度地減少由基板110反射的光線（例如，減少約40%的光線反射率）。如此一來，覆蓋第一遮光層170將可以降低光感測器100在資料線130、薄膜電晶體140以及光感測結構150等區域的光線反射率，以降低反射光對光感測結構150判斷結果所造成的影響。At the same time, the first light-shielding layer 170 partially overlaps the gate line 120 and the data line 130 respectively, but does not extend beyond the other edge of the gate line 120 or the data line 130 . In other words, the coverage area of the first light-shielding layer 170 will not extend to another adjacent pixel unit. Since the material used for the data lines 130 and the gate lines 120 is an opaque material (for example, metal), the first light-shielding layer 170 is overlapped with part of the data lines 130 and the gate lines 120 to ensure that the first light-shielding layer 170 There is no uncovered light-transmitting area between the data line 130 and the gate line 120 . The first light-shielding layer 170 will be able to reduce the light reflected by the substrate 110 to a certain extent (for example, reduce the light reflectivity by about 40%). In this way, covering the first light-shielding layer 170 will reduce the light reflectivity of the photo sensor 100 in areas such as the data line 130 , the thin film transistor 140 and the photo sensing structure 150 , so as to reduce the reflected light on the photo sensing structure 150 Determine the impact of the results.

請參照第1A圖以及第1C圖，薄膜電晶體140的通道區146位於源極144以及汲極148之間。通道區146下方設置有閘極142，透過控制施加於閘極線120上的訊號來控制閘極142以進一步開啟或關閉薄膜電晶體140的通道區146。在一些實施例中，第一遮光層170與薄膜電晶體140的通道區146具有相同的半導體材料。因為第一遮光層170以及通道區146由相同半導體材料構成，因此可以在相同製程中被形成。在一些實施例中，用於形成第一遮光層170以及通道區146的材料可以是或包含非晶矽。然而，在其他實施例中，其他合適的材料亦可以被使用。用於形成第一遮光層170以及通道區146的材料相同將可以簡化光感測器100的製造步驟，並同時降低光感測器100的反光率。Referring to FIGS. 1A and 1C , the channel region 146 of the thin film transistor 140 is located between the source electrode 144 and the drain electrode 148 . A gate 142 is provided below the channel area 146, and the gate 142 is controlled by controlling the signal applied to the gate line 120 to further open or close the channel area 146 of the thin film transistor 140. In some embodiments, the first light shielding layer 170 and the channel region 146 of the thin film transistor 140 have the same semiconductor material. Because the first light-shielding layer 170 and the channel region 146 are made of the same semiconductor material, they can be formed in the same process. In some embodiments, the material used to form the first light shielding layer 170 and the channel region 146 may be or include amorphous silicon. However, in other embodiments, other suitable materials may be used. The same material used to form the first light shielding layer 170 and the channel region 146 can simplify the manufacturing steps of the photo sensor 100 and reduce the reflectivity of the photo sensor 100 at the same time.

在光感測器100的第一遮光層170為半導體材料的實施例中，因為鋪設第一遮光層170的區域可能產生漏電流，因此第一遮光層170的覆蓋區域不會延伸到相鄰的另一個像素單元。這樣可以避免像素單元之間透過第一遮光層170產生漏電流。In an embodiment in which the first light-shielding layer 170 of the photo sensor 100 is made of semiconductor material, the coverage area of the first light-shielding layer 170 will not extend to adjacent areas because leakage current may occur in the area where the first light-shielding layer 170 is laid. Another pixel unit. This can avoid leakage current between pixel units through the first light-shielding layer 170 .

第2A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第2B圖為根據第2A圖中線段B-B’的剖面側視圖。第2C圖為根據第2A圖中線段C-C’的剖面側視圖。請參照第2A圖、第2B圖以及第2C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170位於資料線130與光感測結構150之間的區域以及光感測結構150下方的區域，但並不與延伸電極180直接接觸(或者說，第一遮光層170與延伸電極180分開)。由於第一遮光層170不與延伸電極180直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 2A is a schematic diagram of a photo sensor 100 according to other embodiments of the present disclosure. Figure 2B is a cross-sectional side view based on line segment B-B' in Figure 2A. Figure 2C is a cross-sectional side view based on line segment C-C’ in Figure 2A. Please refer to Figures 2A, 2B and 2C. Compared with the aforementioned embodiments of Figures 1A, 1B and 1C, the first light shielding layer 170 is located between the data line 130 and the light sensing structure 150. and the area under the light sensing structure 150, but is not in direct contact with the extended electrode 180 (or in other words, the first light shielding layer 170 is separated from the extended electrode 180). Since the first light-shielding layer 170 is not in direct contact with the extended electrode 180 , leakage current generated between the extended electrode 180 and the lower electrode 152 of the light sensing structure 150 through the first light-shielding layer 170 can be avoided. As for other components and details, they are the same as those of the embodiments in Figure 1A, Figure 1B and Figure 1C, and will not be described again.

第3A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第3B圖為根據第3A圖中線段B-B’的剖面側視圖。第3C圖為根據第3A圖中線段C-C’的剖面側視圖。請參照第3A圖、第3B圖以及第3C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170位於資料線130的通孔下方的區域以及資料線130與光感測結構150之間的區域，但並不與光感測結構150的下電極152直接接觸(或者說，第一遮光層170與光感測結構150的下電極152分開)。由於第一遮光層170不與光感測結構150的下電極152直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 3A is a schematic diagram of a photo sensor 100 according to other embodiments of the present disclosure. Figure 3B is a cross-sectional side view based on line segment B-B' in Figure 3A. Figure 3C is a cross-sectional side view based on line segment C-C’ in Figure 3A. Please refer to Figures 3A, 3B and 3C. Compared with the aforementioned embodiments of Figures 1A, 1B and 1C, the first light shielding layer 170 is located in the area under the through hole of the data line 130 and The area between the data line 130 and the light sensing structure 150 is not in direct contact with the lower electrode 152 of the light sensing structure 150 (or in other words, the first light shielding layer 170 is separated from the lower electrode 152 of the light sensing structure 150) . Since the first light shielding layer 170 is not in direct contact with the lower electrode 152 of the light sensing structure 150 , leakage current generated between the extended electrode 180 and the lower electrode 152 of the light sensing structure 150 through the first light shielding layer 170 can be avoided. As for other components and details, they are the same as those of the embodiments in Figure 1A, Figure 1B and Figure 1C, and will not be described again.

第4A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第4B圖為根據第4A圖中線段B-B’的剖面側視圖。第4C圖為根據第4A圖中線段C-C’的剖面側視圖。請參照第4A圖、第4B圖以及第4C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170僅覆蓋資料線130與光感測結構150之間區域。第一遮光層170不與延伸電極180直接接觸(或者說，第一遮光層170與延伸電極180分開)，也不與光感測結構150的下電極152直接接觸(或者說，第一遮光層170與光感測結構150的下電極152分開)。由於第一遮光層170不與延伸電極180和光感測結構150的下電極152直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 4A is a schematic diagram of a photo sensor 100 according to other embodiments of the present disclosure. Figure 4B is a cross-sectional side view based on line segment B-B' in Figure 4A. Figure 4C is a cross-sectional side view based on line segment C-C’ in Figure 4A. Please refer to Figures 4A, 4B and 4C. Compared with the aforementioned embodiments of Figures 1A, 1B and 1C, the first light-shielding layer 170 only covers the data lines 130 and the light sensing structure 150 area between. The first light-shielding layer 170 is not in direct contact with the extended electrode 180 (in other words, the first light-shielding layer 170 is separated from the extended electrode 180), nor is it in direct contact with the lower electrode 152 of the light sensing structure 150 (in other words, the first light-shielding layer 170 is separated from the lower electrode 152 of the light sensing structure 150). Since the first light-shielding layer 170 is not in direct contact with the extended electrode 180 and the lower electrode 152 of the light-sensing structure 150 , leakage current generated between the extended electrode 180 and the lower electrode 152 of the light-sensing structure 150 through the first light-shielding layer 170 can be avoided. . As for other components and details, they are the same as those of the embodiments in Figure 1A, Figure 1B and Figure 1C, and will not be described again.

第5A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第5B圖為根據第5A圖中線段B-B’的剖面側視圖。第5C圖為根據第5A圖中線段C-C’的剖面側視圖。請參照第5A圖、第5B圖以及第5C圖，除了前述討論的幾種設置第一遮光層170的實施例之外，亦可以設置多個不相連的遮光層來達到避免漏電流的目的。在一些實施例中，第一遮光層170以及第二遮光層172被設置在光感測器100中。在一些實施例中，光感測結構150的下電極152至少部分覆蓋在第一遮光層170上，延伸電極180至少部分覆蓋在第二遮光層172上。第一遮光層170與第二遮光層172分開。換句話說，光感測器100中分別設置的第一遮光層170與第二遮光層172彼此不相連。第一遮光層170與光感測結構150的下電極152部分的重疊，並且用於遮蔽部分的資料線130與光感測結構150之間的區域以及光感測結構150下方區域。第二遮光層172部分地與延伸電極180重疊並且用於遮蔽資料線130通孔下方區域以及部分的資料線130與光感測結構150之間的區域。同時，第一遮光層170與第二遮光層172分別與閘極線120以及資料線130重疊，但不延伸超過閘極線120或資料線130的另一個邊緣。另一方面，在第5B圖以及第5C圖的剖面視角中，第一遮光層170的上表面170a以及第二遮光層172的上表面172a皆低於光感測結構150的上表面150a。FIG. 5A is a schematic diagram of a photo sensor 100 according to other embodiments of the present disclosure. Figure 5B is a cross-sectional side view based on line segment B-B' in Figure 5A. Figure 5C is a cross-sectional side view based on line segment C-C’ in Figure 5A. Please refer to Figures 5A, 5B and 5C. In addition to the above-discussed embodiments of providing the first light-shielding layer 170, multiple non-connected light-shielding layers can also be provided to avoid leakage current. In some embodiments, the first light-shielding layer 170 and the second light-shielding layer 172 are disposed in the light sensor 100 . In some embodiments, the lower electrode 152 of the light sensing structure 150 at least partially covers the first light shielding layer 170 , and the extension electrode 180 at least partially covers the second light shielding layer 172 . The first light shielding layer 170 is separated from the second light shielding layer 172 . In other words, the first light-shielding layer 170 and the second light-shielding layer 172 respectively provided in the photo sensor 100 are not connected to each other. The first light-shielding layer 170 partially overlaps the lower electrode 152 of the light-sensing structure 150 and is used to shield part of the area between the data line 130 and the light-sensing structure 150 and the area below the light-sensing structure 150 . The second light shielding layer 172 partially overlaps the extended electrode 180 and is used to shield the area under the through hole of the data line 130 and part of the area between the data line 130 and the light sensing structure 150 . At the same time, the first light-shielding layer 170 and the second light-shielding layer 172 overlap the gate line 120 and the data line 130 respectively, but do not extend beyond the other edge of the gate line 120 or the data line 130 . On the other hand, in the cross-sectional view of Figure 5B and Figure 5C, the upper surface 170a of the first light-shielding layer 170 and the upper surface 172a of the second light-shielding layer 172 are both lower than the upper surface 150a of the light sensing structure 150.

在一些實施例中，第一遮光層170、第二遮光層172與薄膜電晶體140的通道區146具有相同的半導體材料。具體來說，請參照第5C圖，由於第一遮光層170、第二遮光層172以及薄膜電晶體140的通道區146（位於源極144以及汲極148之間）由相同半導體材料構成，因此可以在相同製程中形成。在一些實施例中，用於形成第一遮光層170、第二遮光層172以及通道區146的材料可以是或包含非晶矽。然而，在其他實施例中，其他合適的材料亦可以被使用。用於形成第一遮光層170、第二遮光層172以及通道區146的材料相同將可以簡化光感測器100的製造步驟，並同時降低光感測器100的反光率。在第一遮光層170與第二遮光層172為半導體材料的實施例中，因為鋪設第一遮光層170與第二遮光層172的區域可能產生漏電流，因此第一遮光層170與第二遮光層172可彼此分離以避免漏電流問題產生。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。In some embodiments, the first light shielding layer 170 , the second light shielding layer 172 and the channel region 146 of the thin film transistor 140 have the same semiconductor material. Specifically, please refer to FIG. 5C . Since the first light-shielding layer 170 , the second light-shielding layer 172 and the channel region 146 of the thin film transistor 140 (located between the source electrode 144 and the drain electrode 148 ) are made of the same semiconductor material, therefore can be formed in the same process. In some embodiments, the material used to form the first light shielding layer 170, the second light shielding layer 172, and the channel region 146 may be or include amorphous silicon. However, in other embodiments, other suitable materials may be used. The same material used to form the first light shielding layer 170 , the second light shielding layer 172 and the channel region 146 can simplify the manufacturing steps of the photo sensor 100 and at the same time reduce the light reflectivity of the photo sensor 100 . In an embodiment in which the first light-shielding layer 170 and the second light-shielding layer 172 are made of semiconductor materials, leakage current may occur in the area where the first light-shielding layer 170 and the second light-shielding layer 172 are laid. Layers 172 may be separated from each other to avoid leakage current problems. As for other components and details, they are the same as those of the embodiments in Figure 1A, Figure 1B and Figure 1C, and will not be described again.

第6圖為根據本揭露的另一些實施例的光感測器100之示意圖。請參照第6圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第6圖的光感測器100進一步包含反射層200位於基板110下。具體來說，光感測器100將可以搭配反射層200使用。在一些實施例中，反射層200將被設置在基板110下方，並且可以透過黏貼的方式與基板110固定。當光感測器100同時設置有遮光層（例如，第一遮光層170）以及反射層200，將可以更進一步地降低光感測器100的反射光，以確保光感測器100的感測結果不被反射光所影響。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。此外，其餘各實施例的光感測器100也都可以以類似的配置搭配反射層200使用。FIG. 6 is a schematic diagram of a photo sensor 100 according to other embodiments of the present disclosure. Please refer to FIG. 6 . Compared with the aforementioned embodiments in FIGS. 1A , 1B and 1C , the photo sensor 100 in FIG. 6 further includes a reflective layer 200 located under the substrate 110 . Specifically, the photo sensor 100 can be used with the reflective layer 200 . In some embodiments, the reflective layer 200 will be disposed under the substrate 110 and may be fixed to the substrate 110 by adhesion. When the photo sensor 100 is provided with both a light shielding layer (for example, the first light shielding layer 170 ) and a reflective layer 200 , the reflected light of the photo sensor 100 can be further reduced to ensure the sensing performance of the photo sensor 100 The result is not affected by reflected light. As for other components and details, they are the same as those of the embodiments in Figure 1A, Figure 1B and Figure 1C, and will not be described again. In addition, the photo sensors 100 of the other embodiments can also be used with the reflective layer 200 in similar configurations.

以上對於本揭露的具體實施方式之詳述，可以明顯地看出，於本揭露的一些實施例的光感測器中，透過使用相同材料在單一製程中形成第一遮光層與薄膜電晶體的通道區，進一步簡化製程以及光感測器的結構。適當的將第一遮光層覆蓋光感測器的不同區域以減少光感測器各區域的光線被基板反射回光感測器內部，導致光感測器的感測結果受到影響。透過適當的隔開第一遮光層、薄膜電晶體以及光感測結構，以避免第一遮光層在光感測器內部形成漏電流的路徑。配合在光感測器上設置反射層與第一遮光層以確保光感測器的感測結果不被反射光所影響。From the above detailed description of the specific embodiments of the present disclosure, it can be clearly seen that in the photo sensors of some embodiments of the present disclosure, the first light-shielding layer and the thin film transistor are formed in a single process by using the same material. channel area to further simplify the manufacturing process and the structure of the light sensor. Appropriately cover different areas of the photo sensor with the first light-shielding layer to reduce light from each area of the photo sensor being reflected back into the photo sensor by the substrate, causing the sensing results of the photo sensor to be affected. By properly separating the first light-shielding layer, the thin film transistor and the light sensing structure, the first light-shielding layer can be prevented from forming a leakage current path inside the photo sensor. The reflective layer and the first light-shielding layer are cooperatively provided on the light sensor to ensure that the sensing result of the light sensor is not affected by reflected light.

前文概述了若干實施例之特徵，使得熟習此項技術者可較佳地理解本揭露的態樣。熟習此項技術者應瞭解，他們可容易地使用本揭露作為設計或修改用於實現相同目的及/或達成本文中所介紹之實施例之相同優勢的其他製程及結構的基礎。熟習此項技術者亦應認識到，此些等效構造不脫離本揭露的精神及範疇，且他們可在不脫離本揭露的精神及範疇的情況下於本文作出各種改變、代替及替換。The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of the disclosure, and they can make various changes, substitutions and substitutions herein without departing from the spirit and scope of the disclosure.

100:光感測器 110:基板 120:閘極線 130:資料線 140:薄膜電晶體 142:閘極 144:源極 146:通道區 148:汲極 150:光感測結構 150a:上表面 152:下電極 154:光感測層 156:上電極 160:共通電極線 170,172:遮光層 170a,172a:上表面 180:延伸電極 192,194,196:絕緣層 192H:通孔 200:反射層 B-B’,C-C’:線段 100:Light sensor 110:Substrate 120: Gate line 130:Data line 140:Thin film transistor 142: Gate 144:Source 146: Passage area 148:Jiji 150:Light sensing structure 150a: Upper surface 152: Lower electrode 154:Light sensing layer 156: Upper electrode 160: Common electrode line 170,172:Light shielding layer 170a,172a: Upper surface 180:Extended electrode 192,194,196: Insulation layer 192H:Through hole 200: Reflective layer B-B’,C-C’: line segment

當結合隨附諸圖閱讀時，得以自以下詳細描述最佳地理解本揭露的態樣。應注意，根據行業上之標準實務，各種特徵未按比例繪製。事實上，為了論述清楚，可任意地增大或減小各種特徵之尺寸。 第1A圖為根據本揭露的一些實施例的光感測器之示意圖。 第1B圖為根據第1A圖中線段B-B’的剖面側視圖。 第1C圖為根據第1A圖中線段C-C’的剖面側視圖。 第2A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第2B圖為根據第2A圖中線段B-B’的剖面側視圖。 第2C圖為根據第2A圖中線段C-C’的剖面側視圖。 第3A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第3B圖為根據第3A圖中線段B-B’的剖面側視圖。 第3C圖為根據第3A圖中線段C-C’的剖面側視圖。 第4A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第4B圖為根據第4A圖中線段B-B’的剖面側視圖。 第4C圖為根據第4A圖中線段C-C’的剖面側視圖。 第5A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第5B圖為根據第5A圖中線段B-B’的剖面側視圖。 第5C圖為根據第5A圖中線段C-C’的剖面側視圖。 第6圖為根據本揭露的另一些實施例的光感測器之示意圖。 Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying figures. It should be noted that in accordance with standard industry practice, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. Figure 1A is a schematic diagram of a photo sensor according to some embodiments of the present disclosure. Figure 1B is a cross-sectional side view based on line segment B-B' in Figure 1A. Figure 1C is a cross-sectional side view based on line segment C-C’ in Figure 1A. Figure 2A is a schematic diagram of a photo sensor according to other embodiments of the present disclosure. Figure 2B is a cross-sectional side view based on line segment B-B' in Figure 2A. Figure 2C is a cross-sectional side view based on line segment C-C’ in Figure 2A. Figure 3A is a schematic diagram of a photo sensor according to other embodiments of the present disclosure. Figure 3B is a cross-sectional side view based on line segment B-B' in Figure 3A. Figure 3C is a cross-sectional side view based on line segment C-C’ in Figure 3A. Figure 4A is a schematic diagram of a photo sensor according to other embodiments of the present disclosure. Figure 4B is a cross-sectional side view based on line segment B-B' in Figure 4A. Figure 4C is a cross-sectional side view based on line segment C-C’ in Figure 4A. Figure 5A is a schematic diagram of a photo sensor according to other embodiments of the present disclosure. Figure 5B is a cross-sectional side view based on line segment B-B' in Figure 5A. Figure 5C is a cross-sectional side view based on line segment C-C’ in Figure 5A. Figure 6 is a schematic diagram of a photo sensor according to other embodiments of the present disclosure.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without

100:光感測器 100:Light sensor

110:基板 110:Substrate

120:閘極線 120: Gate line

130:資料線 130:Data line

140:薄膜電晶體 140:Thin film transistor

142:閘極 142: Gate

144:源極 144:Source

148:汲極 148:Jiji

150:光感測結構 150:Light sensing structure

152:下電極 152: Lower electrode

154:光感測層 154:Light sensing layer

156:上電極 156: Upper electrode

160:共通電極線 160: Common electrode line

170:遮光層 170:Light shielding layer

180:延伸電極 180:Extended electrode

192H:通孔 192H:Through hole

B-B’,C-C’:線段 B-B’,C-C’: line segment

Claims (9)

一種光感測器，包含：一基板；一閘極線，位於該基板上；一資料線，位於該基板上；一薄膜電晶體，該薄膜電晶體的一閘極電性連接該閘極線，該薄膜電晶體的一汲極電性連接該資料線；一光感測結構，該光感測結構的一下電極電性連接該薄膜電晶體的一源極；一共通電極線，位於該基板上，並電性連接該光感測結構的一上電極；以及一第一遮光層，位於該基板上，該第一遮光層的一上表面低於該光感測結構的一上表面，且由俯視觀之，該第一遮光層至少部分位於該資料線與該光感測結構之間，其中該第一遮光層與該薄膜電晶體的一通道區具有相同的半導體材料。 A light sensor includes: a substrate; a gate line located on the substrate; a data line located on the substrate; a thin film transistor, a gate of the thin film transistor is electrically connected to the gate line , a drain electrode of the thin film transistor is electrically connected to the data line; a light sensing structure, a lower electrode of the light sensing structure is electrically connected to a source electrode of the thin film transistor; a common electrode line is located on the substrate on, and electrically connected to an upper electrode of the light sensing structure; and a first light shielding layer located on the substrate, an upper surface of the first light shielding layer being lower than an upper surface of the light sensing structure, and Viewed from a top view, the first light-shielding layer is at least partially located between the data line and the light sensing structure, wherein the first light-shielding layer and a channel region of the thin film transistor have the same semiconductor material. 如請求項1所述之光感測器，進一步包含：一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極，其中該延伸電極與該第一遮光層分開，且該光感測結構的該下電極也與該第一遮光層分開。 The light sensor of claim 1, further comprising: an extension electrode extending from the drain of the thin film transistor to below the data line, and a part of the data line extends downward to contact the extension electrode, wherein The extended electrode is separated from the first light-shielding layer, and the lower electrode of the light sensing structure is also separated from the first light-shielding layer. 如請求項1所述之光感測器，進一步包含： 一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極，其中該延伸電極至少部分覆蓋在該第一遮光層上。 The light sensor as described in claim 1 further includes: An extended electrode extends from the drain of the thin film transistor to under the data line, and a part of the data line extends downward to contact the extended electrode, wherein the extended electrode at least partially covers the first light-shielding layer. 如請求項3所述之光感測器，其中該光感測結構的該下電極至少部分覆蓋在該第一遮光層上。 The light sensor of claim 3, wherein the lower electrode of the light sensing structure at least partially covers the first light-shielding layer. 如請求項3所述之光感測器，其中該光感測結構的該下電極與該第一遮光層分開。 The light sensor of claim 3, wherein the lower electrode of the light sensing structure is separated from the first light shielding layer. 如請求項1所述之光感測器，其中該光感測結構的該下電極至少部分覆蓋在該第一遮光層上。 The light sensor of claim 1, wherein the lower electrode of the light sensing structure at least partially covers the first light-shielding layer. 如請求項6所述之光感測器，進一步包含：一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極；以及一第二遮光層，其中該延伸電極至少部分覆蓋在該第二遮光層上，且該第一遮光層與該第二遮光層分開。 The light sensor of claim 6, further comprising: an extension electrode extending from the drain electrode of the thin film transistor to below the data line, a part of the data line extending downward to contact the extension electrode; and A second light-shielding layer, wherein the extended electrode at least partially covers the second light-shielding layer, and the first light-shielding layer is separated from the second light-shielding layer. 如請求項7所述之光感測器，其中該第一遮光層、該第二遮光層與該薄膜電晶體的該通道區具有相同的半導體材料。 The light sensor of claim 7, wherein the first light shielding layer, the second light shielding layer and the channel region of the thin film transistor have the same semiconductor material. 如請求項6所述之光感測器，進一步包含： 一反射層，位於該基板下。 The light sensor as described in claim 6 further includes: A reflective layer is located under the substrate.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120050654A1 (en) * 2010-08-25 2012-03-01 Samsung Electronics Co., Ltd. Sensor array substrate and display device having the same
TWI512976B (en) * 2009-03-05 2015-12-11 Semiconductor Energy Lab Semiconductor device
TW201637203A (en) * 2015-03-03 2016-10-16 半導體能源研究所股份有限公司 Semiconductor device, method for manufacturing the same, or display device including the same
TWI613825B (en) * 2009-03-05 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device having stacked wirings

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7514762B2 (en) * 2003-12-15 2009-04-07 Koninklijke Philips Electronics N.V. Active matrix pixel device with photo sensor
JP4308170B2 (en) * 2005-06-10 2009-08-05 本田技研工業株式会社 Image sensor
JP2008153427A (en) * 2006-12-18 2008-07-03 Hitachi Displays Ltd High sensitive optical sensor element and optical sensor device using it
JP5240748B2 (en) * 2007-02-19 2013-07-17 独立行政法人科学技術振興機構 Infrared detector
CN101546907B (en) * 2008-03-25 2011-09-14 中华映管股份有限公司 Electrostatic protection circuit and active-element array substrate
US20090278121A1 (en) * 2008-05-08 2009-11-12 Tpo Displays Corp. System for displaying images and fabrication method thereof
CN101494256B (en) * 2009-02-26 2011-01-05 友达光电股份有限公司 X ray sensor and manufacturing method thereof
CN101866917B (en) * 2010-05-24 2012-01-25 友达光电股份有限公司 Active element array substrate and repair method thereof
EP2518755B1 (en) * 2011-04-26 2014-10-15 FEI Company In-column detector for particle-optical column
CN102790067B (en) * 2012-07-26 2014-12-10 北京京东方光电科技有限公司 Sensor and manufacturing method thereof
TWI450653B (en) * 2012-12-06 2014-08-21 Wintek Corp Contact pad structure
TWM472311U (en) * 2013-10-09 2014-02-11 Giantplus Technology Co Ltd The light sensor
US20160013243A1 (en) * 2014-03-10 2016-01-14 Dpix, Llc Photosensor arrays for detection of radiation and process for the preparation thereof
WO2015141777A1 (en) * 2014-03-20 2015-09-24 シャープ株式会社 Light detection device
TWI540469B (en) * 2014-04-01 2016-07-01 原相科技股份有限公司 Electronic device with high electrostatic protection
KR102533396B1 (en) * 2014-07-31 2023-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
WO2016029274A1 (en) * 2014-08-29 2016-03-03 Panorama Synergy Ltd Optical sensor with 2d grating
KR101573166B1 (en) * 2015-01-30 2015-12-02 하이디스 테크놀로지 주식회사 Digital x-ray detector and method for manufacturing the x-ray detector
US10306168B2 (en) * 2015-05-04 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, imaging system, and electronic device
WO2017115225A2 (en) * 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Flexible device, display device, and manufacturing methods thereof
WO2017150295A1 (en) * 2016-02-29 2017-09-08 シャープ株式会社 Photoelectric conversion device
TWI608600B (en) * 2016-08-04 2017-12-11 力晶科技股份有限公司 Image sensor and related fabrication method
US20180145124A1 (en) * 2016-11-21 2018-05-24 Samsung Display Co., Ltd. Flexible display device
KR20190028194A (en) * 2017-09-08 2019-03-18 엘지디스플레이 주식회사 Array substrate for x-ray detector, x-ray detector including the same and the manufacturing method thereof
CN107623011A (en) * 2017-10-12 2018-01-23 友达光电股份有限公司 Thin-film transistor array base-plate and X-ray detector for X-ray detector
KR102522110B1 (en) * 2017-11-29 2023-04-13 엘지디스플레이 주식회사 Organic light emitting display device
KR102407978B1 (en) * 2017-11-29 2022-06-13 엘지디스플레이 주식회사 Display Device
KR102493828B1 (en) * 2017-12-22 2023-01-30 엘지디스플레이 주식회사 Digital x-ray detector
CN108807556B (en) * 2018-06-11 2021-01-29 京东方科技集团股份有限公司 Optical sensing device, manufacturing method thereof, display device and display equipment
US20190393278A1 (en) * 2018-06-26 2019-12-26 Innolux Corporation Display device
JP7185481B2 (en) * 2018-10-18 2022-12-07 浜松ホトニクス株式会社 Radiation imaging device
US11133345B2 (en) * 2018-11-16 2021-09-28 Sharp Kabushiki Kaisha Active matrix substrate, X-ray imaging panel with the same, and method of manufacturing the same
CN109728060B (en) * 2019-01-04 2021-02-02 京东方科技集团股份有限公司 Array substrate, electroluminescent panel and display device
TWI702582B (en) * 2019-04-03 2020-08-21 元太科技工業股份有限公司 Display panel, display apparatus and method of fabricating display panel
US11710760B2 (en) * 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
CN110444553B (en) * 2019-08-14 2021-12-24 京东方科技集团股份有限公司 Photosensitive device, manufacturing method thereof, detection substrate and array substrate
CN110673380B (en) * 2019-09-09 2021-10-15 昆山龙腾光电股份有限公司 Display panel, manufacturing method thereof and display device
CN110783355B (en) * 2019-10-31 2024-06-04 京东方科技集团股份有限公司 Detection panel, manufacturing method thereof and detection device
CN210443558U (en) * 2019-11-26 2020-05-01 京东方科技集团股份有限公司 Photoelectric sensor, display panel and display device
CN210429817U (en) * 2019-11-26 2020-04-28 北京京东方传感技术有限公司 Flat panel detector
FR3105577B1 (en) * 2019-12-18 2021-12-31 St Microelectronics Crolles 2 Sas Image sensor intended to receive illumination from a rear face, and method for acquiring a corresponding luminous flux
CN113204983B (en) * 2020-01-15 2024-09-10 群创光电股份有限公司 Electronic device with light sensing element and related manufacturing method
CN112379794B (en) * 2020-11-30 2023-10-27 厦门天马微电子有限公司 Display panel and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512976B (en) * 2009-03-05 2015-12-11 Semiconductor Energy Lab Semiconductor device
TWI613825B (en) * 2009-03-05 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device having stacked wirings
US20120050654A1 (en) * 2010-08-25 2012-03-01 Samsung Electronics Co., Ltd. Sensor array substrate and display device having the same
TW201637203A (en) * 2015-03-03 2016-10-16 半導體能源研究所股份有限公司 Semiconductor device, method for manufacturing the same, or display device including the same

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