TW202332026A - Optical sensor - Google Patents

Optical sensor Download PDF

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TW202332026A
TW202332026A TW111140706A TW111140706A TW202332026A TW 202332026 A TW202332026 A TW 202332026A TW 111140706 A TW111140706 A TW 111140706A TW 111140706 A TW111140706 A TW 111140706A TW 202332026 A TW202332026 A TW 202332026A
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light
shielding layer
data line
sensing structure
electrode
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TWI831439B (en
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林欣龍
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友達光電股份有限公司
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    • H—ELECTRICITY
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    • H01L27/144—Devices controlled by radiation
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Abstract

An optical sensor includes a substrate, a gate line, a data line, a thin film transistor, an optical sensor structure, a common electrode line and a first shading layer. The gate line is located over the substrate. The data line is located over the substrate. The gate of the thin film transistor connects to the gate line. The drain of the thin film transistor connects to the data line. A bottom electrode of the optical sensor structure is electrically connected to a source of the thin film transistor. The common electrode line is located over the substrate. The common electrode line is electronically connected to the top electrode of the light sensor structure. The first shading layer is located on the substrate. A top surface of the first shading layer is lower than a top layer of the light sensor structure. In the top view, at least a part of the first shading layer is located between the data line and the light sensor structure.

Description

光感測器light sensor

本揭露是有關於一種光感測器。The present disclosure relates to a light sensor.

光感測器普遍應用於智慧型手機、筆記型電腦或平板電腦等電子裝置。除此之外，光感測器也應用於醫療診斷工具。舉例來說，配置以接收X光的X光感測器可將通過人體組織的X光轉化為可視畫影像。如何提出一種可以改善影像的品質問題的光感測器，是目前業界亟欲投入研發資源解決的問題之一。Light sensors are commonly used in electronic devices such as smartphones, laptops or tablets. In addition, light sensors are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays can convert X-rays passing through human tissue into visual images. How to propose a light sensor that can improve image quality is one of the problems that the industry is eager to invest in research and development resources to solve.

有鑑於此，本揭露的一目的在於提出一種可有效解決上述問題的光感測器。In view of this, an object of the present disclosure is to provide a light sensor that can effectively solve the above problems.

本揭露是有關於一種光感測器包含基板、閘極線、資料線、薄膜電晶體、光感測結構、共通電極線以及第一遮光層。閘極線位於基板上。資料線位於基板上。薄膜電晶體的閘極電性連接閘極線。薄膜電晶體的汲極電性連接資料線。光感測結構的下電極電性連接薄膜電晶體的源極。共通電極線位於基板上。共通電極線電性連接光感測結構的上電極。第一遮光層位於基板上。第一遮光層的上表面低於光感測結構的上表面。由俯視觀之，第一遮光層至少部分位於資料線與光感測結構之間。The present disclosure relates to a light sensor including a substrate, a gate line, a data line, a thin film transistor, a light sensing structure, a common electrode line and a first light-shielding layer. The gate lines are on the substrate. The data lines are located on the substrate. The gate of the thin film transistor is electrically connected to the gate line. The drain of the thin film transistor is electrically connected to the data line. The lower electrode of the photo-sensing structure is electrically connected to the source of the thin film transistor. The common electrode lines are located on the substrate. The common electrode line is electrically connected to the upper electrode of the photo-sensing structure. The first light shielding layer is located on the substrate. The upper surface of the first light-shielding layer is lower than the upper surface of the photo-sensing structure. From a top view, the first light-shielding layer is at least partially located between the data line and the light-sensing structure.

在目前一些實施方式中，第一遮光層與薄膜電晶體的通道區具有相同的半導體材料。In some current implementation manners, the first light-shielding layer and the channel region of the TFT have the same semiconductor material.

在目前一些實施方式中，光感測器進一步包含延伸電極。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸延伸電極。延伸電極至少部分覆蓋在第一遮光層上。光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current embodiments, the light sensor further includes extended electrodes. The extension electrode extends from the drain of the TFT to below the data line. A portion of the data line extends downward to contact the extension electrode. The extension electrode at least partially covers the first light-shielding layer. The lower electrode of the photo-sensing structure at least partially covers the first light-shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current implementations, the lower electrode of the photo-sensing structure at least partially covers the first light-shielding layer.

在目前一些實施方式中，光感測結構的下電極與第一遮光層分開。In some current implementations, the lower electrode of the photo-sensing structure is separated from the first light-shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上。In some current implementations, the lower electrode of the photo-sensing structure at least partially covers the first light-shielding layer.

在目前一些實施方式中，光感測結構的下電極至少部分覆蓋在第一遮光層上，光感測器進一步包含延伸電極以及第二遮光層。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸延伸電極。延伸電極至少部分覆蓋在第二遮光層上。第一遮光層與第二遮光層分開。In some current implementations, the lower electrode of the photo-sensing structure at least partially covers the first light-shielding layer, and the photo-sensor further includes an extension electrode and a second light-shielding layer. The extension electrode extends from the drain of the TFT to below the data line. A portion of the data line extends downward to contact the extension electrode. The extension electrode at least partially covers the second light-shielding layer. The first light shielding layer is separated from the second light shielding layer.

在目前一些實施方式中，第一遮光層、第二遮光層與薄膜電晶體的通道區具有相同的半導體材料。In some current implementations, the first light-shielding layer, the second light-shielding layer and the channel region of the TFT have the same semiconductor material.

在目前一些實施方式中，光感測器進一步包含延伸電極。延伸電極從薄膜電晶體的汲極延伸至資料線下。資料線的部分向下延伸至接觸該延伸電極。延伸電極與第一遮光層分開。光感測結構的下電極也與第一遮光層分開。In some current embodiments, the light sensor further includes extended electrodes. The extension electrode extends from the drain of the TFT to below the data line. A portion of the data line extends downward to contact the extension electrode. The extension electrode is separated from the first light shielding layer. The lower electrode of the light sensing structure is also separated from the first light shielding layer.

在目前一些實施方式中，光感測器進一步包含反射層位於基板下。In some current embodiments, the light sensor further includes a reflective layer under the substrate.

綜上所述，於本揭露的一些實施例的光感測器中，透過使用相同材料在單一製程中形成第一遮光層、第二遮光層以及薄膜電晶體的通道區，進一步簡化製程以及光感測器的結構。適當的將第一遮光層、第二遮光層分配以覆蓋光感測器的不同區域以減少光感測器各區域的光線被基板反射回光感測器內部，導致光感測器的感測結果受到影響。透過適當的隔開第一遮光層、第二遮光層、薄膜電晶體以及光感測結構，以避免第一遮光層與第二遮光層在光感測器內部形成漏電路徑。配合在光感測器上設置反射層、第一遮光層以及第二遮光層以以確保光感測器的感測結果不被反射光所影響。To sum up, in the photosensors of some embodiments of the present disclosure, by using the same material to form the first light-shielding layer, the second light-shielding layer, and the channel region of the thin film transistor in a single process, the manufacturing process and the optical sensor are further simplified. The structure of the sensor. Appropriately allocate the first light-shielding layer and the second light-shielding layer to cover different areas of the photosensor to reduce the reflection of light from each area of the photosensor back into the photosensor by the substrate, resulting in the sensing of the photosensor Results are affected. By properly separating the first light-shielding layer, the second light-shielding layer, the thin film transistor and the light-sensing structure, the first light-shielding layer and the second light-shielding layer are prevented from forming a leakage path inside the light sensor. A reflective layer, a first light-shielding layer and a second light-shielding layer are arranged on the light sensor to ensure that the sensing result of the light sensor is not affected by reflected light.

以下揭露內容提供用於實施所提供標的之不同特徵的許多不同實施例或實例。以下描述部件及佈置之特定實例以簡化本揭露的一些實施方式。當然，此些僅為實例，且並不意欲為限制性的。舉例而言，在如下描述中第一特徵在第二特徵之上或在第二特徵上形成可包括其中第一特徵與第二特徵形成為直接接觸之實施例，且亦可包括其中額外特徵可在第一特徵與第二特徵之間形成而使得第一特徵與第二特徵可不直接接觸的實施例。另外，可在本揭露的各種實例中重複元件符號及/或字母。此重複係出於簡化及清楚目的，且其自身並不表示所論述之各種實施例及/或配置之間的關係。The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify some implementations of the disclosure. Of course, these are examples only, and are not intended to be limiting. For example, in the following description a first feature is formed on or on a second feature may include embodiments where the first feature is formed in direct contact with the second feature, and may also include embodiments where additional features may be An embodiment formed between a first feature and a second feature such that the first feature and the second feature may not be in direct contact. Additionally, element numbers and/or letters may be repeated in various examples of the present disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」或「耦合」係可為二元件間存在其它元件。It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" means that other elements exist between two elements.

本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量(即，測量系統的限制)。例如，「約」可以表示在所述值的一個或多個標準偏差內，或±30％、±20％、±10％、±5％內。再者，本文使用的「約」、「近似」或「實質上」可依光學性質、蝕刻性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and relative A specific amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "about", "approximately" or "substantially" used herein can choose a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and it is not necessary to use one standard deviation to apply to all properties .

除非另有定義，本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

第1A圖為根據本揭露的一些實施例的光感測器100之示意圖。第1B圖為根據第1A圖中線段B-B’的剖面側視圖。第1C圖為根據第1A圖中線段C-C’的剖面側視圖。請參照第1A圖、第1B圖以及第1C圖，一種光感測器100包含基板110、閘極線120、資料線130、薄膜電晶體140、光感測結構150、共通電極線160以及第一遮光層170。閘極線120位於基板110上。資料線130位於基板110上。薄膜電晶體140的閘極142電性連接閘極線120。薄膜電晶體140的汲極148電性連接資料線130。光感測結構150的下電極152電性連接薄膜電晶體140的源極144。共通電極線160位於基板110上。共通電極線160電性連接光感測結構150的上電極156。第一遮光層170位於基板110上。第一遮光層170的上表面170a低於光感測結構150的上表面150a。由俯視觀之，第一遮光層170至少部分位於資料線130與光感測結構150之間。具體來說，資料線130、薄膜電晶體140、光感測結構150以及共通電極線160可以透過絕緣層（例如，第1B圖或第1C圖中的絕緣層192、194）被分隔，並且在資料線130、薄膜電晶體140、光感測結構150以及共通電極線160的上方亦可以覆蓋絕緣層（例如，第1B圖或第1C圖中的絕緣層196）或形成其他結構。FIG. 1A is a schematic diagram of a light sensor 100 according to some embodiments of the present disclosure. Fig. 1B is a cross-sectional side view according to line segment B-B' in Fig. 1A. Fig. 1C is a cross-sectional side view according to line segment C-C' in Fig. 1A. Please refer to FIG. 1A, FIG. 1B and FIG. 1C, a light sensor 100 includes a substrate 110, a gate line 120, a data line 130, a thin film transistor 140, a light sensing structure 150, a common electrode line 160 and a first A light-shielding layer 170 . The gate line 120 is located on the substrate 110 . The data line 130 is located on the substrate 110 . The gate 142 of the TFT 140 is electrically connected to the gate line 120 . The drain 148 of the TFT 140 is electrically connected to the data line 130 . The bottom electrode 152 of the light sensing structure 150 is electrically connected to the source 144 of the thin film transistor 140 . The common electrode line 160 is located on the substrate 110 . The common electrode line 160 is electrically connected to the upper electrode 156 of the photo-sensing structure 150 . The first light shielding layer 170 is located on the substrate 110 . The upper surface 170 a of the first light shielding layer 170 is lower than the upper surface 150 a of the light sensing structure 150 . From a top view, the first light-shielding layer 170 is at least partially located between the data line 130 and the photo-sensing structure 150 . Specifically, the data line 130, the thin film transistor 140, the photo-sensing structure 150, and the common electrode line 160 can be separated through an insulating layer (for example, the insulating layers 192, 194 in FIG. 1B or 1C), and in The data line 130 , the thin film transistor 140 , the light sensing structure 150 and the common electrode line 160 may also be covered with an insulating layer (for example, the insulating layer 196 in FIG. 1B or 1C ) or form other structures.

請參照第1A圖、第1B圖以及第1C圖，在基板110上設置有閘極線120以及資料線130。在第1A圖所繪示的實施例中，閘極線120為縱向延伸，資料線130為橫向延伸並與一部分的閘極線120重疊。在第1B圖的實施例中，資料線130具有通孔，通孔穿過絕緣層192以及絕緣層194並向下延伸。在一些實施例中，光感測器100進一步包含延伸電極180。請參照第1A圖，延伸電極180從薄膜電晶體140的汲極148延伸至資料線130下。請參照第1B圖，資料線130的通孔向下延伸並接觸延伸電極180。延伸電極180至少部分覆蓋在第一遮光層170上。另一方面，光感測結構150的下電極152亦至少部分覆蓋在第一遮光層170上。Referring to FIG. 1A , FIG. 1B and FIG. 1C , gate lines 120 and data lines 130 are disposed on the substrate 110 . In the embodiment shown in FIG. 1A , the gate line 120 extends vertically, and the data line 130 extends horizontally and overlaps a part of the gate line 120 . In the embodiment shown in FIG. 1B , the data line 130 has a through hole passing through the insulating layer 192 and the insulating layer 194 and extending downward. In some embodiments, the light sensor 100 further includes an extension electrode 180 . Referring to FIG. 1A , the extension electrode 180 extends from the drain 148 of the TFT 140 to under the data line 130 . Referring to FIG. 1B , the through hole of the data line 130 extends downward and contacts the extension electrode 180 . The extension electrode 180 at least partially covers the first light shielding layer 170 . On the other hand, the lower electrode 152 of the photo-sensing structure 150 also at least partially covers the first light-shielding layer 170 .

請參照第1A圖、第1B圖以及第1C圖，基板110上同時也設置了薄膜電晶體140以及光感測結構150。薄膜電晶體140鄰近閘極線120設置並且其閘極142橫向延伸以與閘極線120電連接（請參照第1A圖）。薄膜電晶體140的源極144與汲極148縱向延伸，並分別連接光感測結構150以及資料線130。同時，基板110上設置的共通電極線160平行資料線130，並橫向地延伸跨越閘極線120以及光感測結構150。請參照第1B圖以及第1C圖，光感測結構150具有上電極156以及位於下電極152以及上電極156之間的光感測層154。具體來說，光感測結構150的下電極152設置在基板110上方。絕緣層192設置於光感測結構150的下電極152上方，其中絕緣層192具有通孔192H，通孔192H暴露部分的下電極152表面。光感測層154填充在通孔192H中並與被通孔192H暴露的部分下電極152表面直接接觸形成電連接。光感測結構150的上電極156直接接觸並設置在光感測層154上。共通電極線160設置有一個通孔向下方延伸，並且與光感測結構150的上電極156電連接。Referring to FIG. 1A , FIG. 1B and FIG. 1C , a thin film transistor 140 and a light sensing structure 150 are also disposed on the substrate 110 . The thin film transistor 140 is disposed adjacent to the gate line 120 and its gate 142 extends laterally to be electrically connected to the gate line 120 (please refer to FIG. 1A ). The source 144 and the drain 148 of the thin film transistor 140 extend vertically and are respectively connected to the photo-sensing structure 150 and the data line 130 . Meanwhile, the common electrode line 160 disposed on the substrate 110 is parallel to the data line 130 and extends laterally across the gate line 120 and the light sensing structure 150 . Referring to FIG. 1B and FIG. 1C , the photo-sensing structure 150 has an upper electrode 156 and a photo-sensing layer 154 located between the lower electrode 152 and the upper electrode 156 . Specifically, the lower electrode 152 of the photo-sensing structure 150 is disposed above the substrate 110 . The insulating layer 192 is disposed above the lower electrode 152 of the photo-sensing structure 150 , wherein the insulating layer 192 has a through hole 192H, and the through hole 192H exposes part of the surface of the lower electrode 152 . The photo-sensing layer 154 is filled in the through hole 192H and is in direct contact with the portion of the surface of the lower electrode 152 exposed by the through hole 192H to form an electrical connection. The upper electrode 156 of the photo-sensing structure 150 directly contacts and is disposed on the photo-sensing layer 154 . The common electrode line 160 is provided with a through hole extending downward, and is electrically connected to the upper electrode 156 of the photo-sensing structure 150 .

請參照第1A圖、第1B圖以及第1C圖，在一些實施例中，前述部分被延伸電極180所覆蓋的第一遮光層170進一步延伸並且位於資料線130通孔下方區域、資料線130與光感測結構150之間區域以及光感測結構150下方區域。更進一步來說，在一些實施例中光感測結構150的下電極152至少部分覆蓋在第一遮光層170上。參照第1B圖以及第1C圖可以看出，光感測結構150將完全設置在第一遮光層170上方，光感測結構150的上表面150a高於第一遮光層170的上表面170a。參照第1A圖，在俯視角度中觀察可以發現，第一遮光層170的面積大於光感測結構150的下電極152的面積。Please refer to FIG. 1A, FIG. 1B and FIG. 1C. In some embodiments, the first light-shielding layer 170 covered by the extended electrode 180 is further extended and located in the area below the through hole of the data line 130, the data line 130 and the through hole. The area between the photo-sensing structures 150 and the area below the photo-sensing structures 150 . Furthermore, in some embodiments, the lower electrode 152 of the photo-sensing structure 150 at least partially covers the first light-shielding layer 170 . Referring to FIG. 1B and FIG. 1C , it can be seen that the light sensing structure 150 is completely disposed above the first light shielding layer 170 , and the upper surface 150 a of the light sensing structure 150 is higher than the upper surface 170 a of the first light shielding layer 170 . Referring to FIG. 1A , it can be seen from a top view that the area of the first light-shielding layer 170 is larger than the area of the bottom electrode 152 of the photo-sensing structure 150 .

同時，第一遮光層170分別與閘極線120以及資料線130部分重疊，但不延伸超過閘極線120或資料線130的另一個邊緣。換句話說，第一遮光層170的覆蓋區域將不會延伸到相鄰的另一個像素單元。由於資料線130以及閘極線120使用的材料為不透光材料（例如，金屬），透過將第一遮光層170與部分的資料線130以及閘極線120重疊，以保證第一遮光層170與資料線130以及閘極線120之間不會有未被覆蓋的透光區域。第一遮光層170將能一定程度地減少由基板110反射的光線（例如，減少約40%的光線反射率）。如此一來，覆蓋第一遮光層170將可以降低光感測器100在資料線130、薄膜電晶體140以及光感測結構150等區域的光線反射率，以降低反射光對光感測結構150判斷結果所造成的影響。Meanwhile, the first light-shielding layer 170 partially overlaps the gate line 120 and the data line 130 respectively, but does not extend beyond the other edge of the gate line 120 or the data line 130 . In other words, the coverage area of the first light shielding layer 170 will not extend to another adjacent pixel unit. Since the material used for the data line 130 and the gate line 120 is an opaque material (for example, metal), the first light shielding layer 170 is overlapped with a part of the data line 130 and the gate line 120 to ensure that the first light shielding layer 170 There is no uncovered light-transmitting area between the data line 130 and the gate line 120 . The first light-shielding layer 170 can reduce the light reflected by the substrate 110 to a certain extent (for example, reduce the light reflectance by about 40%). In this way, covering the first light-shielding layer 170 can reduce the light reflectance of the photosensor 100 in the areas of the data line 130, the thin film transistor 140, and the photo-sensing structure 150, so as to reduce the impact of reflected light on the photo-sensing structure 150. impact on the outcome of the judgment.

請參照第1A圖以及第1C圖，薄膜電晶體140的通道區146位於源極144以及汲極148之間。通道區146下方設置有閘極142，透過控制施加於閘極線120上的訊號來控制閘極142以進一步開啟或關閉薄膜電晶體140的通道區146。在一些實施例中，第一遮光層170與薄膜電晶體140的通道區146具有相同的半導體材料。因為第一遮光層170以及通道區146由相同半導體材料構成，因此可以在相同製程中被形成。在一些實施例中，用於形成第一遮光層170以及通道區146的材料可以是或包含非晶矽。然而，在其他實施例中，其他合適的材料亦可以被使用。用於形成第一遮光層170以及通道區146的材料相同將可以簡化光感測器100的製造步驟，並同時降低光感測器100的反光率。Referring to FIG. 1A and FIG. 1C , the channel region 146 of the TFT 140 is located between the source 144 and the drain 148 . A gate 142 is disposed below the channel region 146 , and the gate 142 is controlled by controlling a signal applied to the gate line 120 to further open or close the channel region 146 of the thin film transistor 140 . In some embodiments, the first light shielding layer 170 has the same semiconductor material as the channel region 146 of the TFT 140 . Because the first light shielding layer 170 and the channel region 146 are made of the same semiconductor material, they can be formed in the same process. In some embodiments, the material used to form the first light shielding layer 170 and the channel region 146 may be or include amorphous silicon. However, in other embodiments, other suitable materials may also be used. The same material used to form the first light-shielding layer 170 and the channel region 146 can simplify the manufacturing steps of the photosensor 100 and reduce the reflectance of the photosensor 100 at the same time.

在光感測器100的第一遮光層170為半導體材料的實施例中，因為鋪設第一遮光層170的區域可能產生漏電流，因此第一遮光層170的覆蓋區域不會延伸到相鄰的另一個像素單元。這樣可以避免像素單元之間透過第一遮光層170產生漏電流。In the embodiment where the first light-shielding layer 170 of the photosensor 100 is a semiconductor material, because the area where the first light-shielding layer 170 is laid may generate leakage current, the coverage area of the first light-shielding layer 170 will not extend to adjacent Another pixel unit. In this way, leakage current generated between the pixel units through the first light shielding layer 170 can be avoided.

第2A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第2B圖為根據第2A圖中線段B-B’的剖面側視圖。第2C圖為根據第2A圖中線段C-C’的剖面側視圖。請參照第2A圖、第2B圖以及第2C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170位於資料線130與光感測結構150之間的區域以及光感測結構150下方的區域，但並不與延伸電極180直接接觸(或者說，第一遮光層170與延伸電極180分開)。由於第一遮光層170不與延伸電極180直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 2A is a schematic diagram of a light sensor 100 according to other embodiments of the present disclosure. Fig. 2B is a cross-sectional side view according to the line segment B-B' in Fig. 2A. Fig. 2C is a cross-sectional side view according to line segment C-C' in Fig. 2A. Please refer to FIG. 2A, FIG. 2B and FIG. 2C. Compared with the above-mentioned embodiments of FIG. 1A, FIG. 1B and FIG. 1C, the first light shielding layer 170 is located between the data line 130 and the light sensing structure 150. The region between and the region below the photo-sensing structure 150, but not in direct contact with the extension electrode 180 (or in other words, the first light-shielding layer 170 is separated from the extension electrode 180). Since the first light-shielding layer 170 is not in direct contact with the extension electrode 180 , leakage current between the extension electrode 180 and the lower electrode 152 of the photo-sensing structure 150 via the first light-shielding layer 170 can be avoided. As for other elements and details, they are the same as those in the embodiment in Fig. 1A, Fig. 1B and Fig. 1C, and will not be repeated here.

第3A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第3B圖為根據第3A圖中線段B-B’的剖面側視圖。第3C圖為根據第3A圖中線段C-C’的剖面側視圖。請參照第3A圖、第3B圖以及第3C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170位於資料線130的通孔下方的區域以及資料線130與光感測結構150之間的區域，但並不與光感測結構150的下電極152直接接觸(或者說，第一遮光層170與光感測結構150的下電極152分開)。由於第一遮光層170不與光感測結構150的下電極152直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 3A is a schematic diagram of a light sensor 100 according to other embodiments of the present disclosure. Fig. 3B is a cross-sectional side view according to line segment B-B' in Fig. 3A. Fig. 3C is a cross-sectional side view according to line segment C-C' in Fig. 3A. Please refer to FIG. 3A, FIG. 3B and FIG. 3C. Compared with the aforementioned embodiments for FIG. 1A, FIG. 1B and FIG. The area between the data line 130 and the photo-sensing structure 150, but not in direct contact with the lower electrode 152 of the photo-sensing structure 150 (or in other words, the first light-shielding layer 170 is separated from the lower electrode 152 of the photo-sensing structure 150) . Since the first light-shielding layer 170 is not in direct contact with the lower electrode 152 of the light-sensing structure 150 , leakage current between the extension electrode 180 and the lower electrode 152 of the light-sensing structure 150 via the first light-shielding layer 170 can be avoided. As for other elements and details, they are the same as those in the embodiment in Fig. 1A, Fig. 1B and Fig. 1C, and will not be repeated here.

第4A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第4B圖為根據第4A圖中線段B-B’的剖面側視圖。第4C圖為根據第4A圖中線段C-C’的剖面側視圖。請參照第4A圖、第4B圖以及第4C圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第一遮光層170僅覆蓋資料線130與光感測結構150之間區域。第一遮光層170不與延伸電極180直接接觸(或者說，第一遮光層170與延伸電極180分開)，也不與光感測結構150的下電極152直接接觸(或者說，第一遮光層170與光感測結構150的下電極152分開)。由於第一遮光層170不與延伸電極180和光感測結構150的下電極152直接接觸，因此可以避免延伸電極180以及光感測結構150的下電極152之間經由第一遮光層170產生漏電流。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。FIG. 4A is a schematic diagram of a light sensor 100 according to other embodiments of the present disclosure. Fig. 4B is a cross-sectional side view according to the line segment B-B' in Fig. 4A. Fig. 4C is a cross-sectional side view according to line segment C-C' in Fig. 4A. Please refer to FIG. 4A, FIG. 4B and FIG. 4C. Compared with the above-mentioned embodiments for FIG. 1A, FIG. 1B and FIG. 1C, the first light-shielding layer 170 only covers the data line 130 and the light-sensing structure 150. area between. The first light-shielding layer 170 is not in direct contact with the extension electrode 180 (in other words, the first light-shielding layer 170 is separated from the extension electrode 180), nor is it in direct contact with the lower electrode 152 of the light-sensing structure 150 (or in other words, the first light-shielding layer 170 is separated from the extension electrode 180). 170 is separated from the lower electrode 152 of the photo-sensing structure 150). Since the first light-shielding layer 170 is not in direct contact with the extension electrode 180 and the lower electrode 152 of the photo-sensing structure 150, it is possible to avoid leakage current between the extension electrode 180 and the lower electrode 152 of the light-sensing structure 150 via the first light-shielding layer 170. . As for other elements and details, they are the same as those in the embodiment in Fig. 1A, Fig. 1B and Fig. 1C, and will not be repeated here.

第5A圖為根據本揭露的另一些實施例的光感測器100之示意圖。第5B圖為根據第5A圖中線段B-B’的剖面側視圖。第5C圖為根據第5A圖中線段C-C’的剖面側視圖。請參照第5A圖、第5B圖以及第5C圖，除了前述討論的幾種設置第一遮光層170的實施例之外，亦可以設置多個不相連的遮光層來達到避免漏電流的目的。在一些實施例中，第一遮光層170以及第二遮光層172被設置在光感測器100中。在一些實施例中，光感測結構150的下電極152至少部分覆蓋在第一遮光層170上，延伸電極180至少部分覆蓋在第二遮光層172上。第一遮光層170與第二遮光層172分開。換句話說，光感測器100中分別設置的第一遮光層170與第二遮光層172彼此不相連。第一遮光層170與光感測結構150的下電極152部分的重疊，並且用於遮蔽部分的資料線130與光感測結構150之間的區域以及光感測結構150下方區域。第二遮光層172部分地與延伸電極180重疊並且用於遮蔽資料線130通孔下方區域以及部分的資料線130與光感測結構150之間的區域。同時，第一遮光層170與第二遮光層172分別與閘極線120以及資料線130重疊，但不延伸超過閘極線120或資料線130的另一個邊緣。另一方面，在第5B圖以及第5C圖的剖面視角中，第一遮光層170的上表面170a以及第二遮光層172的上表面172a皆低於光感測結構150的上表面150a。FIG. 5A is a schematic diagram of a light sensor 100 according to other embodiments of the present disclosure. Fig. 5B is a cross-sectional side view according to the line segment B-B' in Fig. 5A. Fig. 5C is a cross-sectional side view according to line segment C-C' in Fig. 5A. Please refer to FIG. 5A , FIG. 5B and FIG. 5C . In addition to the above-mentioned embodiments of disposing the first light-shielding layer 170 , multiple disjoint light-shielding layers can also be set to avoid leakage current. In some embodiments, the first light shielding layer 170 and the second light shielding layer 172 are disposed in the light sensor 100 . In some embodiments, the lower electrode 152 of the photo-sensing structure 150 at least partially covers the first light-shielding layer 170 , and the extension electrode 180 at least partially covers the second light-shielding layer 172 . The first light shielding layer 170 is separated from the second light shielding layer 172 . In other words, the first light-shielding layer 170 and the second light-shielding layer 172 respectively disposed in the light sensor 100 are not connected to each other. The first light-shielding layer 170 partially overlaps the lower electrode 152 of the light-sensing structure 150 , and is used to shield a portion of the area between the data line 130 and the light-sensing structure 150 and the area below the light-sensing structure 150 . The second light-shielding layer 172 partially overlaps the extension electrode 180 and is used for shielding the area below the through hole of the data line 130 and a portion of the area between the data line 130 and the photo-sensing structure 150 . Meanwhile, the first light-shielding layer 170 and the second light-shielding layer 172 respectively overlap the gate line 120 and the data line 130 , but do not extend beyond the other edge of the gate line 120 or the data line 130 . On the other hand, in the cross-sectional view of FIG. 5B and FIG. 5C , the upper surface 170 a of the first light shielding layer 170 and the upper surface 172 a of the second light shielding layer 172 are lower than the upper surface 150 a of the light sensing structure 150 .

在一些實施例中，第一遮光層170、第二遮光層172與薄膜電晶體140的通道區146具有相同的半導體材料。具體來說，請參照第5C圖，由於第一遮光層170、第二遮光層172以及薄膜電晶體140的通道區146（位於源極144以及汲極148之間）由相同半導體材料構成，因此可以在相同製程中形成。在一些實施例中，用於形成第一遮光層170、第二遮光層172以及通道區146的材料可以是或包含非晶矽。然而，在其他實施例中，其他合適的材料亦可以被使用。用於形成第一遮光層170、第二遮光層172以及通道區146的材料相同將可以簡化光感測器100的製造步驟，並同時降低光感測器100的反光率。在第一遮光層170與第二遮光層172為半導體材料的實施例中，因為鋪設第一遮光層170與第二遮光層172的區域可能產生漏電流，因此第一遮光層170與第二遮光層172可彼此分離以避免漏電流問題產生。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。In some embodiments, the first light shielding layer 170 , the second light shielding layer 172 and the channel region 146 of the thin film transistor 140 have the same semiconductor material. Specifically, referring to FIG. 5C, since the first light-shielding layer 170, the second light-shielding layer 172, and the channel region 146 of the thin film transistor 140 (located between the source 144 and the drain 148) are made of the same semiconductor material, therefore can be formed in the same process. In some embodiments, the material used to form the first light shielding layer 170 , the second light shielding layer 172 and the channel region 146 may be or include amorphous silicon. However, in other embodiments, other suitable materials may also be used. The same materials used to form the first light-shielding layer 170 , the second light-shielding layer 172 and the channel region 146 can simplify the manufacturing steps of the photosensor 100 and reduce the reflectance of the photosensor 100 at the same time. In the embodiment where the first light-shielding layer 170 and the second light-shielding layer 172 are made of semiconductor materials, leakage current may occur in the area where the first light-shielding layer 170 and the second light-shielding layer 172 are laid, so the first light-shielding layer 170 and the second light-shielding layer Layers 172 may be separated from each other to avoid leakage current problems. As for other elements and details, they are the same as those in the embodiment in Fig. 1A, Fig. 1B and Fig. 1C, and will not be repeated here.

第6圖為根據本揭露的另一些實施例的光感測器100之示意圖。請參照第6圖，相較於前述針對第1A圖、第1B圖以及第1C圖的實施例，第6圖的光感測器100進一步包含反射層200位於基板110下。具體來說，光感測器100將可以搭配反射層200使用。在一些實施例中，反射層200將被設置在基板110下方，並且可以透過黏貼的方式與基板110固定。當光感測器100同時設置有遮光層（例如，第一遮光層170）以及反射層200，將可以更進一步地降低光感測器100的反射光，以確保光感測器100的感測結果不被反射光所影響。至於其他元件與細節，均與第1A圖、第1B圖以及第1C圖的實施例，不再重複敘述之。此外，其餘各實施例的光感測器100也都可以以類似的配置搭配反射層200使用。FIG. 6 is a schematic diagram of a light sensor 100 according to other embodiments of the present disclosure. Please refer to FIG. 6 . Compared with the aforementioned embodiments in FIGS. 1A , 1B and 1C , the light sensor 100 in FIG. 6 further includes a reflective layer 200 located under the substrate 110 . Specifically, the light sensor 100 can be used with the reflective layer 200 . In some embodiments, the reflective layer 200 is disposed under the substrate 110 and can be fixed with the substrate 110 through adhesive. When the light sensor 100 is provided with a light-shielding layer (for example, the first light-shielding layer 170 ) and a reflective layer 200 at the same time, the reflected light of the light sensor 100 can be further reduced to ensure the sensing of the light sensor 100 Results are not affected by reflected light. As for other elements and details, they are the same as those in the embodiment in Fig. 1A, Fig. 1B and Fig. 1C, and will not be repeated here. In addition, the light sensor 100 in other embodiments can also be used with the reflective layer 200 in a similar configuration.

以上對於本揭露的具體實施方式之詳述，可以明顯地看出，於本揭露的一些實施例的光感測器中，透過使用相同材料在單一製程中形成第一遮光層與薄膜電晶體的通道區，進一步簡化製程以及光感測器的結構。適當的將第一遮光層覆蓋光感測器的不同區域以減少光感測器各區域的光線被基板反射回光感測器內部，導致光感測器的感測結果受到影響。透過適當的隔開第一遮光層、薄膜電晶體以及光感測結構，以避免第一遮光層在光感測器內部形成漏電流的路徑。配合在光感測器上設置反射層與第一遮光層以確保光感測器的感測結果不被反射光所影響。From the above detailed description of specific implementations of the present disclosure, it can be clearly seen that in the photosensors of some embodiments of the present disclosure, the first light-shielding layer and the thin film transistor are formed in a single process by using the same material. The channel area further simplifies the manufacturing process and the structure of the light sensor. Appropriately covering different regions of the photosensor with the first light-shielding layer can reduce the reflection of light from each region of the photosensor back into the photosensor by the substrate, which will affect the sensing result of the photosensor. By properly separating the first light-shielding layer, the thin film transistor, and the light-sensing structure, the first light-shielding layer is prevented from forming a leakage current path inside the light sensor. A reflective layer and a first light-shielding layer are arranged on the light sensor in cooperation to ensure that the sensing result of the light sensor is not affected by reflected light.

前文概述了若干實施例之特徵，使得熟習此項技術者可較佳地理解本揭露的態樣。熟習此項技術者應瞭解，他們可容易地使用本揭露作為設計或修改用於實現相同目的及/或達成本文中所介紹之實施例之相同優勢的其他製程及結構的基礎。熟習此項技術者亦應認識到，此些等效構造不脫離本揭露的精神及範疇，且他們可在不脫離本揭露的精神及範疇的情況下於本文作出各種改變、代替及替換。The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and substitutions herein without departing from the spirit and scope of the present disclosure.

100:光感測器 110:基板 120:閘極線 130:資料線 140:薄膜電晶體 142:閘極 144:源極 146:通道區 148:汲極 150:光感測結構 150a:上表面 152:下電極 154:光感測層 156:上電極 160:共通電極線 170,172:遮光層 170a,172a:上表面 180:延伸電極 192,194,196:絕緣層 192H:通孔 200:反射層 B-B’,C-C’:線段 100: light sensor 110: Substrate 120: gate line 130: data line 140: thin film transistor 142: gate 144: source 146: Passage area 148: drain 150: Light sensing structure 150a: upper surface 152: Lower electrode 154: Light sensing layer 156: Upper electrode 160: common electrode line 170,172: shading layer 170a, 172a: upper surface 180: Extended electrode 192, 194, 196: insulating layer 192H: Through hole 200: reflective layer B-B', C-C': line segment

當結合隨附諸圖閱讀時，得以自以下詳細描述最佳地理解本揭露的態樣。應注意，根據行業上之標準實務，各種特徵未按比例繪製。事實上，為了論述清楚，可任意地增大或減小各種特徵之尺寸。 第1A圖為根據本揭露的一些實施例的光感測器之示意圖。 第1B圖為根據第1A圖中線段B-B’的剖面側視圖。 第1C圖為根據第1A圖中線段C-C’的剖面側視圖。 第2A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第2B圖為根據第2A圖中線段B-B’的剖面側視圖。 第2C圖為根據第2A圖中線段C-C’的剖面側視圖。 第3A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第3B圖為根據第3A圖中線段B-B’的剖面側視圖。 第3C圖為根據第3A圖中線段C-C’的剖面側視圖。 第4A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第4B圖為根據第4A圖中線段B-B’的剖面側視圖。 第4C圖為根據第4A圖中線段C-C’的剖面側視圖。 第5A圖為根據本揭露的另一些實施例的光感測器之示意圖。 第5B圖為根據第5A圖中線段B-B’的剖面側視圖。 第5C圖為根據第5A圖中線段C-C’的剖面側視圖。 第6圖為根據本揭露的另一些實施例的光感測器之示意圖。 Aspects of the present disclosure are best understood from the following Detailed Description when read in conjunction with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1A is a schematic diagram of a light sensor according to some embodiments of the present disclosure. Fig. 1B is a cross-sectional side view according to line segment B-B' in Fig. 1A. Fig. 1C is a cross-sectional side view according to line segment C-C' in Fig. 1A. FIG. 2A is a schematic diagram of a light sensor according to other embodiments of the present disclosure. Fig. 2B is a cross-sectional side view according to the line segment B-B' in Fig. 2A. Fig. 2C is a cross-sectional side view according to line segment C-C' in Fig. 2A. FIG. 3A is a schematic diagram of a light sensor according to other embodiments of the present disclosure. Fig. 3B is a cross-sectional side view according to line segment B-B' in Fig. 3A. Fig. 3C is a cross-sectional side view according to line segment C-C' in Fig. 3A. FIG. 4A is a schematic diagram of a light sensor according to other embodiments of the present disclosure. Fig. 4B is a cross-sectional side view according to the line segment B-B' in Fig. 4A. Fig. 4C is a cross-sectional side view according to line segment C-C' in Fig. 4A. FIG. 5A is a schematic diagram of a light sensor according to other embodiments of the present disclosure. Fig. 5B is a cross-sectional side view according to the line segment B-B' in Fig. 5A. Fig. 5C is a cross-sectional side view according to line segment C-C' in Fig. 5A. FIG. 6 is a schematic diagram of a light sensor according to other embodiments of the present disclosure.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100:光感測器 100: light sensor

110:基板 110: Substrate

120:閘極線 120: gate line

130:資料線 130: data line

140:薄膜電晶體 140: thin film transistor

142:閘極 142: gate

144:源極 144: source

148:汲極 148: drain

150:光感測結構 150: Light sensing structure

152:下電極 152: Lower electrode

154:光感測層 154: Light sensing layer

156:上電極 156: Upper electrode

160:共通電極線 160: common electrode line

170:遮光層 170: shading layer

180:延伸電極 180: Extended electrode

192H:通孔 192H: Through hole

B-B’,C-C’:線段 B-B', C-C': line segment

Claims (10)

一種光感測器，包含： 一基板； 一閘極線，位於該基板上； 一資料線，位於該基板上； 一薄膜電晶體，該薄膜電晶體的一閘極電性連接該閘極線，該薄膜電晶體的一汲極電性連接該資料線； 一光感測結構，該光感測結構的一下電極電性連接該薄膜電晶體的一源極； 一共通電極線，位於該基板上，並電性連接該光感測結構的一上電極；以及 一第一遮光層，位於該基板上，該第一遮光層的一上表面低於該光感測結構的一上表面，且由俯視觀之，該第一遮光層至少部分位於該資料線與該光感測結構之間。 A light sensor comprising: a substrate; a gate line located on the substrate; a data line located on the substrate; A thin film transistor, a gate of the thin film transistor is electrically connected to the gate line, and a drain of the thin film transistor is electrically connected to the data line; a photo-sensing structure, the lower electrode of the photo-sensing structure is electrically connected to a source of the thin film transistor; a common electrode line, located on the substrate, and electrically connected to an upper electrode of the photo-sensing structure; and A first light-shielding layer, located on the substrate, an upper surface of the first light-shielding layer is lower than an upper surface of the light-sensing structure, and viewed from a top view, the first light-shielding layer is at least partially located between the data line and the between the photo-sensing structures. 如請求項1所述之光感測器，其中該第一遮光層與該薄膜電晶體的一通道區具有相同的半導體材料。The light sensor as claimed in claim 1, wherein the first light-shielding layer has the same semiconductor material as a channel region of the thin film transistor. 如請求項1所述之光感測器，進一步包含： 一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極，其中該延伸電極至少部分覆蓋在該第一遮光層上。 The light sensor as described in claim 1, further comprising: An extension electrode extends from the drain of the thin film transistor to under the data line, a part of the data line extends down to contact the extension electrode, wherein the extension electrode at least partially covers the first light-shielding layer. 如請求項3所述之光感測器，其中該光感測結構的該下電極至少部分覆蓋在該第一遮光層上。The light sensor as claimed in claim 3, wherein the lower electrode of the light sensing structure at least partially covers the first light shielding layer. 如請求項3所述之光感測器，其中該光感測結構的該下電極與該第一遮光層分開。The light sensor as claimed in claim 3, wherein the lower electrode of the light sensing structure is separated from the first light shielding layer. 如請求項1所述之光感測器，其中該光感測結構的該下電極至少部分覆蓋在該第一遮光層上。The light sensor as claimed in claim 1, wherein the lower electrode of the light sensing structure at least partially covers the first light shielding layer. 如請求項6所述之光感測器，進一步包含: 一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極；以及 一第二遮光層，其中該延伸電極至少部分覆蓋在該第二遮光層上，且該第一遮光層與該第二遮光層分開。 The light sensor as described in claim item 6, further comprising: an extension electrode extending from the drain of the TFT to below the data line, a part of the data line extending downward to contact the extension electrode; and A second light-shielding layer, wherein the extension electrode at least partially covers the second light-shielding layer, and the first light-shielding layer is separated from the second light-shielding layer. 如請求項7所述之光感測器，其中該第一遮光層、該第二遮光層與該薄膜電晶體的一通道區具有相同的半導體材料。The light sensor as claimed in claim 7, wherein the first light-shielding layer, the second light-shielding layer and a channel region of the thin film transistor have the same semiconductor material. 如請求項1所述之光感測器，進一步包含： 一延伸電極，從該薄膜電晶體的該汲極延伸至該資料線下，該資料線的一部分向下延伸至接觸該延伸電極，其中該延伸電極與該第一遮光層分開，且該光感測結構的該下電極也與該第一遮光層分開。 The light sensor as described in claim 1, further comprising: An extension electrode extends from the drain of the thin film transistor to under the data line, a part of the data line extends downward to contact the extension electrode, wherein the extension electrode is separated from the first light-shielding layer, and the photosensitive The lower electrode of the measurement structure is also separated from the first light-shielding layer. 如請求項1所述之光感測器，進一步包含: 一反射層，位於該基板下。 The light sensor as described in claim item 1, further comprising: A reflective layer is located under the substrate.
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