TW202332066A - Sensing device - Google Patents

Abstract

A sensing device includes a substrate, a sensing element, a switch element and a block wall structure. The sensing element is disposed on the substrate. The switch element is disposed at one side of the sensing element. The block wall structure electrically connects the sensing element with the switch element, wherein a wall face of the block wall structure is parallel to a side face of the sensing element adjacent to the switch element.

Description

Sensing device

The present invention relates to an optoelectronic device, and more particularly to a sensing device.

Due to its excellent performance, light sensors have been widely used in fields such as security inspection, industrial inspection and medical diagnosis. For example, in medical diagnosis, X-ray sensors can be used to capture images of human chest, blood vessels, teeth, etc. Generally speaking, this type of sensor mainly includes thin film transistor (thin film transistor, TFT) and PIN diode (PIN diode), wherein PIN diode can convert light energy into electrical signal, and thin film transistor is Used to read the electrical signal measured by the PIN diode.

Traditionally, the manufacturing process for this type of sensor is to fabricate the PIN diode after the thin film transistor. In order to support higher frame rate and reduce leakage current, the current technology tends to use Metal Oxide Transistor (Metal Oxide Transistor). However, in the process of making PIN diodes, due to the need to use hydrogen-containing gases such as SiH ₂ and H ₂ to deposit thin films, hydrogen ions diffuse into the metal oxide semiconductor layer of metal oxide thin film transistors, This results in abnormal performance of the thin film transistor, thereby affecting the yield and reliability of the sensor.

The present invention provides a sensing device with improved yield and improved reliability.

An embodiment of the present invention proposes a sensing device, comprising: a substrate; a sensing element located on the substrate; a switching element located on one side of the sensing element; and a retaining wall structure electrically connecting the sensing element and the switching element, Wherein the wall surface of the retaining wall structure is parallel to the side of the sensing element adjacent to the switch element.

In an embodiment of the present invention, the wall surface of the above-mentioned retaining wall structure is perpendicular to the upper surface of the substrate.

In an embodiment of the present invention, the above-mentioned retaining wall structure is located between the semiconductor layer of the switching element and the photoelectric conversion layer of the sensing element.

In an embodiment of the present invention, the side of the sensing element adjacent to the switching element at least includes a side of the photoelectric conversion layer, and the side of the photoelectric conversion layer is perpendicular to the upper surface of the substrate.

In an embodiment of the present invention, the source of the above-mentioned switching element is a part of the retaining wall structure.

In an embodiment of the present invention, the above-mentioned retaining wall structure is electrically connected to the lower electrode of the sensing element.

In an embodiment of the present invention, the above-mentioned sensing device further includes an auxiliary structure electrically connected to the source electrode and the lower electrode, and the angle between the extension surface of the auxiliary structure and the upper surface of the substrate is less than 90 degrees.

In an embodiment of the present invention, the distance between the first end of the auxiliary structure electrically connected to the source and the substrate is greater than the distance between the second end of the auxiliary structure electrically connected to the lower electrode and the substrate.

In an embodiment of the present invention, the length of the retaining wall structure in the extending direction of the wall surface is greater than the width of the semiconductor layer of the switching element parallel to the extending direction.

In an embodiment of the present invention, the length of the retaining wall structure in the extension direction of the wall surface is not less than the length of the side surface of the sensing element in a direction parallel to the extension direction.

In an embodiment of the present invention, the distance between the semiconductor layer of the switching element and the substrate is smaller than the distance between the sensing element and the substrate.

In an embodiment of the present invention, the above-mentioned sensing device further includes a metal oxide layer, and the metal oxide layer is stacked on the retaining wall structure.

In an embodiment of the present invention, the wall surface of the above-mentioned retaining wall structure is L-shaped, and the side of the sensing element adjacent to the switch element is L-shaped.

In an embodiment of the present invention, the source of the switch element and the drain of the switch element belong to different film layers.

Another embodiment of the present invention proposes a sensing device, including: a substrate; a sensing element layer located on the substrate and including a plurality of sensing elements; a wavelength conversion layer located on a side of the sensing element layer away from the substrate; and the switch element layer, located between the sensing element layer and the wavelength conversion layer, and includes a plurality of switch elements, wherein the plurality of switch elements are respectively electrically connected to sides of the plurality of sensing elements away from the wavelength conversion layer.

In an embodiment of the present invention, the above-mentioned plurality of sensing elements are physically connected to each other.

In an embodiment of the present invention, the above sensing element layer has a plurality of through holes, and the sensing element is located between the plurality of through holes.

In an embodiment of the present invention, the sources of the aforementioned plurality of switching elements are electrically connected to the lower electrodes of the plurality of sensing elements through a plurality of through holes, respectively.

In an embodiment of the present invention, the above-mentioned sensing device further includes a light-shielding structure located between the wavelength conversion layer and the switch element layer, and having a plurality of openings, wherein the plurality of openings respectively overlap the plurality of sensing elements.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or components, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

The terms "about," "approximately," or "substantially" as used herein include stated values and those within ordinary skill in the art, taking into account the measurements in question and the specific amount of error associated with the measurements (i.e., limitations of the measurement system). The average value within an acceptable range of deviation from a specified value as determined by a human being. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately", or "substantially" used herein may select a more acceptable range of deviation or standard deviation based on optical properties, etching properties or other properties, and may not use one standard deviation to apply to all nature.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, may, typically, have rough and/or non-linear features. Additionally, acute corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

FIG. 1A is a schematic partial top view of a sensing device 10 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. In order to make the drawing more concise, FIG. 1A schematically shows the substrate 110 , the sensing element 120 , the switching element 130 , the common electrode CM, the scanning line SL and the data line DL, and other components and film layers are omitted.

1A to 1B, the sensing device 10 includes: a substrate 110; a sensing element 120 located on the substrate 110; a switching element 130 located on one side of the sensing element 120; and a retaining wall structure BW electrically connected The sensing element 120 and the switching element 130 , wherein the wall surface F of the retaining wall structure BW is substantially parallel to the side surface 121 of the sensing element 120 adjacent to the switching element.

In the sensing device 10 according to an embodiment of the present invention, the hydrogen ions are blocked by setting the blocking wall structure BW, and the wall surface F of the blocking wall structure BW is substantially parallel to the side surface 121 of the sensing element 120 adjacent to the switching element. , which can effectively prevent hydrogen ions from entering the semiconductor layer, so as not to affect the yield and reliability of the sensing device.

Hereinafter, with reference to the drawings, the implementation of each element and film layer of the sensing device 10 will be continued to be described, but the present invention is not limited thereto.

Please refer to FIG. 1A and FIG. 1B at the same time. In this embodiment, the substrate 110 may be a rigid substrate, such as a glass substrate, a quartz substrate or a silicon substrate, but is not limited thereto. In other embodiments, the substrate 110 may be a flexible substrate, such as a polymer substrate or a plastic substrate.

In this embodiment, the sensing device 10 may include multiple sets of sensing elements 120 and switching elements 130 arranged in an array. The sensing element 120 is, for example, a PIN diode (PIN diode) for converting light energy into an electrical signal. The switching element 130 is, for example, a metal oxide thin film transistor, and is used for reading the electrical signal detected by the sensing element 120 .

For example, the sensing element 120 may be disposed on the substrate 110 , and the sensing element 120 may include a lower electrode BE, a photoelectric conversion layer PN, and an upper electrode TE sequentially disposed on the substrate 110 . The bottom electrode BE may be disposed in the groove CA of the planar layer PL1 , for example, the bottom electrode BE may be located on the bottom surface B1 of the groove CA, and the upper electrode TE and the lower electrode BE are electrically independent from each other. The upper electrode TE can be a light-transmitting electrode. For example, the material of the upper electrode TE can include indium tin oxide (InSnO), indium zinc oxide (InZnO), aluminum zinc oxide (AlZnO), aluminum indium oxide (AlInO), indium oxide (InO), gallium oxide (GaO), carbon nanotubes, nano silver particles, metals or alloys with a thickness less than 60 nanometers (nm), organic transparent conductive materials, or other suitable transparent conductive materials Material. The material of the bottom electrode BE may include metals, such as chromium (Cr), gold (Au), silver (Ag), copper (Cu), tin (Sn), lead (Pb), hafnium (Hf), tungsten (W), Molybdenum (Mo), neodymium (Nd), titanium (Ti), tantalum (Ta), aluminum (Al), zinc (Zn), or an alloy of any combination of the above metals, or a laminate of the above metals and/or alloys, But not limited to this. The bottom electrode BE may also include other conductive materials, such as metal nitrides, metal oxides, metal oxynitrides, stacked layers of metals and other conductive materials, or other materials with conductive properties.

The photoelectric conversion layer PN is located between the upper electrode TE and the lower electrode BE, and the photoelectric conversion layer PN can absorb visible light from above the sensing element 120 and generate a corresponding photocurrent. For example, in some embodiments, the photoelectric conversion layer PN may include a P-type semiconductor pattern SP, an intrinsic semiconductor pattern SI, and an N-type semiconductor pattern SN, wherein the P-type semiconductor pattern SP is located between the upper electrode TE and the intrinsic semiconductor pattern SI. , and the N-type semiconductor pattern SN is located between the intrinsic semiconductor pattern SI and the bottom electrode BE. In some embodiments, the intrinsic semiconductor pattern SI includes intrinsic amorphous silicon, the N-type semiconductor pattern SN includes phosphorous (P)-doped amorphous silicon, and the P-type semiconductor pattern SP includes boron (B)-doped silicon, for example. Amorphous silicon.

In some embodiments, the sensing device 10 may further include a flat layer PL2 and a common electrode CM, wherein the flat layer PL2 may cover the sensing element 120, the common electrode CM may be disposed on the flat layer PL2, and the common electrode CM may pass through the flat layer PL2. The via VA in the layer PL2 is electrically connected to the upper electrode TE. In some embodiments, the common electrode CM can have a ring-shaped outline, and the common electrode CM can overlap the periphery of the sensing element 120. In this way, the common electrode CM can reflect light back to the sensing element 120, thereby improving sensing. The light utilization efficiency of the device 10. The material of the common electrode CM may include metal, alloy, metal nitride, metal oxide, metal oxynitride, other conductive materials, or stacked layers of at least two of the aforementioned materials.

The switch element 130 can be electrically connected to the sensing element 120 so as to read the electrical signal measured by the sensing element 120 . For example, in this embodiment, the switch element 130 may be disposed on the substrate 110, the switch element 130 may include a semiconductor layer 130C, a gate 130G, a source 130S, and a drain 130D, and the source 130S is electrically connected to the sensor. The bottom electrode BE of the measuring element 120.

Specifically, the semiconductor layer 130C may include a channel region Ac, a source region As, and a drain region Ad, wherein the channel region Ac overlaps the gate 130G, and the channel region Ac connects the source region As and the drain region Ad. The source 130S is electrically connected to the source region As, and the drain 130D is electrically connected to the drain region Ad. In addition, the distance D1 between the semiconductor layer 130C and the substrate 110 may be smaller than the distance D2 between the sensing element 120 and the substrate 110 .

The sensing device 10 may further include a buffer layer BF, insulating layers I1, I2 and a planarization layer PL1, wherein the buffer layer BF is located between the substrate 110 and the semiconductor layer 130C to prevent impurities in the substrate 110 from entering the semiconductor layer 130C. The insulating layer I1 is located between the semiconductor layer 130C and the gate 130G, the insulating layer I2 and the planar layer PL1 are located between the source 130S and the drain 130D and the gate 130G, and the source 130S and the drain 130D respectively pass through the insulating layer I1, I2 and the vias V1 and V2 in the planar layer PL1 are connected to the source region As and the drain region Ad. In addition, the sensing device 10 may further include a scan line SL and a data line DL, the scan line SL may be electrically connected to the gate 130G, and the data line DL may be electrically connected to the drain 130D.

The material of the semiconductor layer 130C is, for example, a metal oxide semiconductor material, such as indium zinc oxide (InZnO, IZO), indium gallium zinc oxide (InGaZnO, IGZO), indium tungsten oxide (InWO, IWO), indium tungsten zinc oxide (InWZnO, IWZO), indium zinc tin oxide (InZnSnO, IZTO), indium gallium tin oxide (InGaSnO, IGTO) or indium gallium zinc tin oxide (InGaZnSnO, IGZTO), but the present invention is not limited thereto. The material of the gate 130G, the source 130S, the drain 130D, the scan line SL and the data line DL may include metals, such as titanium, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, tantalum, Aluminum, zinc, or an alloy of any combination of the above metals, or a laminate of the above metals and/or alloys, but not limited thereto.

In this embodiment, the source 130S is electrically connected to the bottom electrode BE of the sensing element 120 , and the source 130S and the bottom electrode BE of the sensing element 120 may belong to the same film layer. It is worth noting that the sensing element 120 may have a side 121 closest to the switching element 130, wherein the side 121 includes at least the side of the photoelectric conversion layer PN, the side 121 may extend in the direction XX', and the source 130S may be in The retaining wall structure BW is formed by extending in a direction YY' substantially parallel to the direction XX'. In other words, the source electrode 130S may belong to a part of the barrier wall structure BW, and the barrier wall structure BW may also be electrically connected to the bottom electrode BE of the sensing element 120 . In some embodiments, the barrier wall structure BW may be physically connected to the bottom electrode BE. The wall F or the central axis of the wall structure BW may be substantially perpendicular to the upper surface 111 of the substrate 110, and the wall F may extend in the direction YY' to block the semiconductor layer 130C of the switching element 130 and the sensing element 120 between the photoelectric conversion layers PN. In some embodiments, the length Lb of the wall structure BW in the direction Y-Y' of the wall F may be greater than the width Wc of the semiconductor layer 130C in the direction Y-Y'. In this way, during the process of forming the photoelectric conversion layer PN, the barrier structure BW can serve as a shielding wall of the semiconductor layer 130C to prevent hydrogen ions from diffusing into the semiconductor layer 130C, so that the performance of the switching element 130 is not affected, thereby ensuring the sensitivity Test device 10 has increased yield and improved reliability.

In some embodiments, the sensing device 10 may further include an auxiliary structure AW, the auxiliary structure AW may belong to the same film layer as the source 130S and the bottom electrode BE, and the auxiliary structure AW may electrically connect the source 130S and the bottom electrode BE. Specifically, the auxiliary structure AW may be located on the sidewall S1 of the groove CA, and the angle θ between the extension surface of the auxiliary structure AW and the upper surface 111 of the substrate 110 may be less than 90 degrees. The first end E1 of the auxiliary structure AW can be connected to the source 130S, the second end E2 of the auxiliary structure AW can be connected to the lower electrode BE, and the distance D3 between the first end E1 and the substrate 110 is greater than the distance D4 between the second end E2 and the substrate 110 . In this way, the auxiliary structure AW can serve as a second shielding wall between the photoelectric conversion layer PN and the semiconductor layer 130C, that is to say, both the blocking wall structure BW and the auxiliary structure AW can prevent hydrogen ions from diffusing into the semiconductor layer 130C, This ensures that the performance of the switching element 130 is not affected.

In some embodiments, the sensing device 10 may further include an insulating layer I3, a flat layer PL3, and a wavelength conversion layer WT, and the insulating layer I3, the flat layer PL3, and the wavelength conversion layer WT may be sequentially disposed on the sensing element 120 and the switching element. 130 to convert light from the upper side of FIG. 1B (such as X-rays) into visible light. For example, the wavelength conversion layer WT can be formed by a thermal evaporation process, and the material of the wavelength conversion layer WT can include Cesium Iodide (CsI).

For example, the material of the buffer layer BF and the insulating layers I1 , I2 , I3 can be selected from inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or stacked layers of at least two of the above materials. The materials of the planar layers PL1, PL2, and PL3 may include transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy resins, etc. ) materials, etc., but the present invention is not limited thereto.

In some embodiments, the sensing device 10 may further include a metal reflective layer MR, and the metal reflective layer MR may be formed on the side of the wavelength conversion layer WT away from the sensing element 120 by sputtering, so as to reflect visible light back to The photoelectric conversion layer PN. In some embodiments, the sensing device 10 may further include an optical adhesive layer OA. The optical adhesive layer OA may be located between the wavelength conversion layer WT and the sensing element 120 . The material of the optical adhesive layer OA is, for example, acrylic adhesive.

In the following, other embodiments of the present invention are continued to be described using FIGS. 2 to 5B, and the component numbers and related contents of the embodiment in FIGS. Descriptions of the same technical contents are omitted. For the description of the omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1B , which will not be repeated in the following description.

FIG. 2 is a schematic partial top view of a sensing device 20 according to an embodiment of the invention. The sensing device 20 includes: a substrate 110; a sensing element 120 located on the substrate 110; a switching element 130 located on one side of the sensing element 120; and a retaining wall structure BWa electrically connected to the sensing element 120 and the switching element 130, Wherein, the wall surface Fa of the retaining wall structure BWa is substantially parallel to the side surface 121 of the sensing element 120 adjacent to the switching element.

The main difference between the sensing device 20 shown in FIG. 2 and the sensing device 10 shown in FIG. 1A to FIG. The length Lba is not less than the length Ls of the side 121 of the sensing element 120 adjacent to the switching element 130 in the direction XX' parallel to the direction YY'. In other words, the length Lba of the barrier structure BWa of the sensing device 20 is equal to or greater than the length Ls of the side surface 121 . In this way, for the switching element 130, the wall structure BWa can completely cover the side surface 121 of the sensing element 120, thereby preventing hydrogen ions from diffusing into the switching element 130 from the side surface 121 of the sensing element 120, thereby ensuring the sensing device 20 has increased yield and improved reliability.

FIG. 3A is a schematic partial top view of a sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line B-B' of Fig. 3A. The sensing device 30 includes: a substrate 110; a sensing element 120 located on the substrate 110; a switching element 130 located on one side of the sensing element 120; and a retaining wall structure BW electrically connected to the sensing element 120 and the switching element 130, Wherein, the wall surface Fb of the retaining wall structure BW is substantially parallel to the side surface 121 of the sensing element 120 adjacent to the switch element.

The main difference between the sensing device 30 shown in FIGS. 3A to 3B and the sensing device 10 shown in FIGS. 1A to 1B is that the sensing device 30 further includes a conductive oxide layer CO, and the conductive oxide layer CO can be stacked on the barrier wall structure BW, so as to prevent hydrogen ions from the sensing element 120 from diffusing into the switching element 130 .

In some embodiments, the conductive oxide layer CO can also be stacked on the auxiliary structure AW to block hydrogen ions from the sensing element 120 from diffusing into the switching element 130 . In some embodiments, the conductive oxide layer CO can also be stacked on the drain 130D of the switch element 130 , and the conductive oxide layer CO can also be located between the photoelectric conversion layer PN and the bottom electrode BE. That is, the conductive oxide layer CO may be stacked on the entire film layer forming the barrier structure BK, the auxiliary structure AW, the source electrode 130S, the drain electrode 130D, and the bottom electrode BE.

4A(a) to 4E(b) are partial cross-sectional schematic diagrams of the steps of the manufacturing method of the sensing device 40 according to an embodiment of the present invention, wherein, FIG. 4A(b), FIG. 4B(b), and FIG. 4C (b), Fig. 4D(b) and Fig. 4E(b) are respectively along the section in Fig. 4A(a), Fig. 4B(a), Fig. 4C(a), Fig. 4D(a) and Fig. 4E(a) Schematic cross-section made by line C-C'. Hereinafter, the manufacturing method of the sensing device 40 will be described with reference to FIG. 4A(a) to FIG. 4E(b).

Please refer to FIG. 4A(a) and FIG. 4A(b) at the same time, the bottom electrode BE can be formed on the substrate 110 . For example, the method for forming the bottom electrode BE may include the following steps. Firstly, a blanket conductor layer (not shown) is formed on the substrate 110 . Then, a patterned photoresist (not shown) is formed on the conductor layer by using a lithography process. Next, using the patterned photoresist as a mask, an etching process is performed on the conductive layer to form the bottom electrode BE. Afterwards, the patterned photoresist is removed.

Please refer to FIG. 4B(a) and FIG. 4B(b) at the same time. Next, the photoelectric conversion layer PN and the upper electrode TE are formed on the lower electrode BE. For example, the method for forming the photoelectric conversion layer PN and the upper electrode TE may include the following steps. First, a blanket semiconductor stack (not shown) is formed on the bottom electrode BE and the substrate 110 , and a blanket transparent conductive layer (not shown) is formed on the blanket semiconductor stack. The semiconductor stack may include, for example, an N-type semiconductor material layer, an intrinsic semiconductor material layer, and a P-type semiconductor material layer (not shown) sequentially formed on the bottom electrode BE. Then, a patterned photoresist (not shown) is formed on the blanketed transparent conductive layer by using a lithography process. Next, using the patterned photoresist as a mask, a wet etching process is performed on the blanketed transparent conductive layer to form the upper electrode TE. Next, use the patterned photoresist as a mask to perform a dry etching process on the blanketed semiconductor stack to form a photoelectric conversion layer PN, and the photoelectric conversion layer PN may include P-type semiconductor patterns SP, intrinsic semiconductor patterns SI and N type semiconductor pattern SN. After that, the patterned photoresist is removed, that is, the sensing element 420 is completed, and the sensing element 420 includes the upper electrode TE, the photoelectric conversion layer PN, and the lower electrode BE.

In some embodiments, the photoelectric conversion layer PN may also have an overhang (overhead) and an undercut (undercut) profile, so as to prevent leakage. For example, the end OH of the P-type semiconductor pattern SP of the photoelectric conversion layer PN may have an overhang profile, and the end UC of the N-type semiconductor pattern SN of the photoelectric conversion layer PN may have an undercut profile.

In some embodiments, the upper electrode TE may also be annealed (Annealing) AN to improve the conductivity of the upper electrode TE. The annealing treatment AN may be performed at a temperature between about 150°C to 250°C (eg, 180°C, 200°C, or 220°C), and the time for the annealing treatment AN may be between about 30 minutes to 180 minutes, for example 80 minutes, 120 minutes or 150 minutes, but the present invention is not limited thereto. It is worth noting that annealing AN can also convert residual hydrogen ions into molecular hydrogen (H ₂ ) and dissipate.

Please refer to FIG. 4C(a) and FIG. 4C(b) at the same time. Then, a flat layer PL4 with via holes V3 and V4 is formed on the upper electrode TE, the photoelectric conversion layer PN, the lower electrode BE and the substrate 110, and the via hole V3 The lower electrode BE may be exposed, and the through hole V4 may expose the upper electrode TE. The forming method of the flat layer PL4 may include the following steps. Firstly, a blanket flat material layer is formed on the sensing element 420 and the substrate 110 by chemical vapor deposition. The material of the flat material layer may include transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials, and the like. Next, a patterned photoresist (not shown) is formed on the flat material layer by using a lithography process. Then, the planar material layer is etched by using the patterned photoresist as a mask to form a planar layer PL4 having via holes V3 and V4. Afterwards, the patterned photoresist is removed.

Next, form the source electrode 430S, the wall structure BWc, and the common electrode CMc on the planar layer PL4, wherein the source electrode 430S may belong to a part of the wall structure BWc, and the source electrode 430S may be electrically connected to the lower electrode BE through the via hole V3, The common electrode CMc can be electrically connected to the upper electrode TE through the via hole V4. The forming method of the source electrode 430S, the wall structure BWc, and the common electrode CMc may include the following steps. Firstly, a blanket conductive layer (not shown) is formed on the planar layer PL4 by physical vapor deposition. Next, a patterned photoresist (not shown) is formed on the conductive layer by using a photolithography process. Then, the conductive layer is etched by using the patterned photoresist as a mask to form the source electrode 430S, the barrier wall structure BWc and the common electrode CMc. Afterwards, the patterned photoresist is removed. In other words, the source electrode 430S, the wall structure BWc and the common electrode CMc may belong to the same film layer. The material of the source electrode 430S, the wall structure BWc, and the common electrode CMc may include chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys of the foregoing metals, or Stacked layers of the aforementioned metals and/or alloys, or other conductive materials.

Please refer to FIG. 4D(a) and FIG. 4D(b) at the same time. Next, a semiconductor layer 430C is formed on the flat layer PL4, and one end of the semiconductor layer 430C is electrically connected to the source 430S. The method of forming the semiconductor layer 430C may include the following steps. Firstly, a semiconductor material layer (not shown) is formed on the flat layer PL4 by chemical vapor deposition. Next, a patterned photoresist (not shown) is formed on the semiconductor material layer by using a lithography process. Then, the semiconductor material layer is etched by using the patterned photoresist as a mask to form the semiconductor layer 430C. Afterwards, the patterned photoresist is removed. In this embodiment, the distance D5 between the semiconductor layer 430C and the substrate 110 may be greater than the distance D6 between the upper surface 422 of the sensing element 420 (ie, the upper surface of the upper electrode TE) and the substrate 110 . In other words, the level where the semiconductor layer 430C is located is higher than the level where the sensing element 420 is located, and the semiconductor layer 430C is roughly located above the sensing element 420 .

Next, a blanket insulating layer I41 may be formed on the semiconductor layer 430C, the source electrode 430S, the common electrode CMc, and the planar layer PL4 by chemical vapor deposition. Next, the gate 430G and the scan line SL are formed on the insulating layer I41 , and the gate 430G overlaps the semiconductor layer 430C. The forming method of the gate 430G and the scan line SL may include the following steps. Firstly, a blanket conductive layer (not shown) is formed on the insulating layer I41 by physical vapor deposition. Next, a patterned photoresist (not shown) is formed on the conductive layer by using a photolithography process. Then, the conductive layer is etched by using the patterned photoresist as a mask to form the gate electrode 430G and the scan line SL. Afterwards, the patterned photoresist is removed.

In some embodiments, after forming the gate electrode 430G, a doping process DP may also be performed, and the doping process DP is, for example, hydrogen plasma treatment. The doping process DP can use the gate 430G as a mask to dope the semiconductor layer 430C. After the doping process DP, the portion of the semiconductor layer 430C that overlaps the gate 430G can form a channel region Ac, and the doping process DP can implant hydrogen into the source region As and drain of the semiconductor layer 430C that does not overlap the gate 430G. The electrode region Ad enables the source region As and the drain region Ad to have lower resistance than the channel region Ac, so as to increase the carrier mobility of the source region As and the drain region Ad. In some embodiments, the source region As of the semiconductor layer 430C may overlap or connect to the source 430S, and the source region As can form an ohmic contact with the source 430S. Similarly, the drain region Ad of the semiconductor layer 430C can also form an ohmic contact with the subsequently formed drain 430D.

Please refer to Fig. 4E (a) and Fig. 4E (b) at the same time, then, form the insulating layer I42 of covering on gate electrode 430G and insulating layer I41, then, form via hole V5 in insulating layer I41, I42, to expose The drain region Ad of the semiconductor layer 430C. The insulating layers I41 and I42 can be made of silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or stacked layers of at least two of the above materials.

Next, the drain 430D and the data line DL are formed on the insulating layer I42, and the drain 430D can be electrically connected to the drain region Ad of the semiconductor layer 430C through the via hole V5, that is, the switching element 430 is completed, and the switching element 430 includes a semiconductor layer 430C, the gate 430G, the source 430S, and the drain 430D, wherein the source 430S and the drain 430D belong to different film layers.

In some embodiments, a wavelength conversion layer may also be formed on the sensing element 420 and the switching element 430 by a sputtering process. In some embodiments, before forming the wavelength conversion layer, a flat layer may be formed on the sensing element 420 and the switching element 430 to provide a flat surface for forming the wavelength conversion layer.

It is worth noting that in this embodiment, the semiconductor layer 430C is formed after the formation of the photoelectric conversion layer PN, that is, the semiconductor layer 430C does not exist when the photoelectric conversion layer PN is formed, so it can be excluded when forming the photoelectric conversion layer PN. The problem of hydrogen ion diffusion into the semiconductor layer 430C during the layer PN process. In addition, the upper surface of the photoelectric conversion layer PN is covered with the upper electrode TE, and the material of the upper electrode TE may include a metal oxide that easily absorbs hydrogen ions, such as indium zinc oxide, aluminum indium oxide, or aluminum zinc oxide. In addition, the side 421 of the sensing element 420 adjacent to the source 430S of the switching element 430 (mainly including the side of the photoelectric conversion layer PN) may have an L-shaped profile, while the retaining wall structure BWc may have an L-shaped wall surface Fc, so that the wall The extending direction of the face Fc may be substantially parallel to the extending direction of the side surface 421 . In this way, during the process steps after the formation of the barrier wall structure BWc, the barrier wall structure BWc and the upper electrode TE can also serve as a shield wall of the semiconductor layer 430C to prevent hydrogen ions released from the photoelectric conversion layer PN from diffusing into the semiconductor layer 430C. , so as to ensure that the sensing device 40 has an improved yield rate and improved reliability.

FIG. 5A is a schematic partial top view of a sensing device 50 according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the section line D-D' of Fig. 5A. The sensing device 50 includes: a substrate 110; a sensing element layer SS located on the substrate 110 and including a plurality of sensing elements 520; a wavelength conversion layer WT located on a side of the sensing element layer SS away from the substrate 110; and a switch The element layer WW is located between the sensing element layer SS and the wavelength conversion layer WT, and includes a plurality of switch elements 530, wherein the plurality of switch elements 530 are respectively electrically connected to one of the plurality of sensing elements 520 away from the wavelength conversion layer WT. side.

In this embodiment, the sensing element layer SS may include a plurality of lower electrodes BE located on the substrate 110, an N-type semiconductor layer LN located on the plurality of lower electrodes BE, and an intrinsic semiconductor layer LI located on the N-type semiconductor layer LN. , a P-type semiconductor layer LP located on the intrinsic semiconductor layer LI, and a plurality of upper electrodes TE located on the P-type semiconductor layer LP, wherein a plurality of upper electrodes TE respectively overlap a plurality of lower electrodes BE, and are sandwiched between each group of mutually overlapping Part of the N-type semiconductor layer LN, part of the intrinsic semiconductor layer LI and part of the P-type semiconductor layer LP between the upper electrode TE and the lower electrode BE can constitute a photoelectric conversion layer PN of a sensing element 520, and each group of overlapping upper electrodes The TE, the bottom electrode BE and the photoelectric conversion layer PN interposed therebetween can form a sensing element 520 . In some embodiments, the plurality of bottom electrodes BE and the plurality of upper electrodes TE may be respectively arranged in an array on the substrate 110 , but is not limited thereto.

The switching element layer WW of the sensing device 50 may be substantially located above the sensing element layer SS, and the planarization layer PL5 may be located between the switching element layer WW and the sensing element layer SS. The switching element layer WW may include a plurality of sources 530S, a plurality of semiconductor layers 530C, a plurality of gates 530G, a plurality of drains 530D, and insulating layers I51, I52, wherein the plurality of semiconductor layers 530C and the plurality of sources 530S are located on a flat surface. On the layer PL5 , the insulating layer I51 is located between the plurality of semiconductor layers 530C and the plurality of sources 530S and the plurality of gates 530G, and the insulating layer I52 is located between the plurality of gates 530G and the plurality of drains 530D. The plurality of source electrodes 530S are respectively electrically connected to the source regions As of the plurality of semiconductor layers 530C. In some embodiments, the multiple sources 530S, the multiple semiconductor layers 530C, the multiple gates 530G, and the multiple drains 530D may be respectively arranged in an array on the substrate 110 , but it is not limited thereto. The insulating layers I51 and I52 are made of silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or stacked layers of at least two of the above materials.

In this embodiment, the wavelength conversion layer WT of the sensing device 50 may be located above the switching element layer WW, in other words, the switching element layer WW may be located between the wavelength conversion layer WT and the sensing element layer SS. In some embodiments, the stack of the planar layer PL5, the P-type semiconductor layer LP, the intrinsic semiconductor layer LI, and the N-type semiconductor layer LN may have a plurality of via holes V6, and the plurality of via holes V6 respectively overlap a plurality of lower electrodes BE . In this way, the plurality of sources 530S of the switching element layer WW can be electrically connected to the plurality of lower electrodes BE respectively through the plurality of vias V6, and the lower electrodes BE are on the side of the sensing element 520 away from the wavelength conversion layer WT. electrode.

In some embodiments, the sensing device 50 may further include a common electrode CMd, a scan line SL and a data line DL. For example, the common electrode CMd can be located on the planar layer PL5 , and the common electrode CMd can be electrically connected to the upper electrode TE through the via hole V7 in the planar layer PL5 . In some embodiments, the common electrode CMd and the source electrode 530S may belong to the same film layer. In some embodiments, the common electrode CMd may have a ring-shaped profile, and the common electrode CMd may substantially overlap the periphery of the sensing element 520 , thereby shielding light from above in FIG. 5B . In addition, the scan line SL can be electrically connected to the gate 530G, and the scan line SL and the gate 530G can belong to the same film layer. The data line DL can be electrically connected to the drain 530D, and the data line DL and the drain 530D can belong to the same film layer.

In some embodiments, the stack of insulating layers I51 and I52 may also have a plurality of vias V8, and the plurality of vias V8 may respectively overlap the drain regions Ad of the plurality of semiconductor layers 530C, so that the plurality of drains 530D can The drain regions Ad of the plurality of semiconductor layers 530C are electrically connected through the plurality of via holes V8 respectively. The channel region Ac of the semiconductor layer 530C may overlap the gate 530G, and the channel region Ac may be located between the source region As and the drain region Ad. In this way, the source 530S and the drain 530D electrically connected to the same semiconductor layer 530C and the adjacent gate 530G can form a switch element 530 .

In some embodiments, the sensing device 50 may further include a light shielding layer BM having a plurality of openings OP, and the light shielding layer BM may be located between the wavelength converting layer WT and the switching element layer WW. Specifically, the sensing device 50 may further include planar layers PL6 and PL7, wherein the planar layer PL6 may be located between the drain 530D and the insulating layer I52 and the light shielding layer BM, and the planar layer PL7 may be located between the light shielding layer BM and the wavelength conversion layer Between WT. Materials of the planar layers PL6 and PL7 include organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials, and the like. The light-shielding layer BM can block the light from the top of FIG. 5B . Since no photocurrent passes through the area overlapping the light-shielding layer BM in the sensing element layer SS, the area overlapping the light-shielding layer BM in the sensing element layer SS can be viewed as is the separation area between the sensing elements 520 , and the area overlapping each opening OP in the sensing element layer SS can be regarded as an area of a sensing element 520 . In other words, the plurality of openings OP of the light shielding layer BM may respectively overlap the plurality of sensing elements 520 in the sensing element layer SS. In this way, the sensing element layer SS does not need to be patterned by an etching process to form a plurality of sensing elements 520 , so the leakage phenomenon caused by the etching process can be reduced or eliminated, thereby improving the yield of the sensing device 50 .

It should be noted that, in this embodiment, the photoelectric conversion layers PN of the plurality of sensing elements 520 can be physically connected to each other, and the plurality of through holes V6 can all overlap the light-shielding layer BM, so that each sensing element 520 can be located in multiple between the vias V6. In addition, the first distance D7 between the source 530S of the switch element 530 and the wavelength conversion layer WT may be greater than the second distance D8 between the gate 530G of the switch element 530 and the wavelength conversion layer WT, and the gate 530G is separated from the wavelength conversion layer WT. The second distance D8 between the layers WT may be greater than the third distance D9 between the drain 530D of the switching element 530 and the wavelength conversion layer WT. In addition, in this embodiment, the semiconductor layer 530C is formed after the photoelectric conversion layer PN is formed, so the problem of hydrogen ions diffusing into the semiconductor layer 530C during the formation of the photoelectric conversion layer PN can be eliminated.

To sum up, the sensing device of the present invention can effectively prevent the hydrogen ions from entering the semiconductor layer by setting the barrier structure to block the hydrogen ions, so that the sensing device can have good reliability. In addition, the sensing device according to the embodiment of the present invention can also enhance the effect of blocking hydrogen ions from entering the semiconductor layer by providing an auxiliary structure and/or a conductive oxide layer. Furthermore, the sensing device according to the embodiment of the present invention can also eliminate the problem of hydrogen ions diffusing into the semiconductor layer during the process of forming the photoelectric conversion layer by forming the photoelectric conversion layer first and then forming the semiconductor layer. In addition, the sensing device of the embodiment of the present invention can also distinguish each sensing element by disposing a light-shielding layer instead of an etching process, thereby reducing or eliminating the leakage phenomenon caused by the etching process, thereby improving the yield of the sensing device.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 20, 30, 40, 50: sensing device 110: Substrate 111: upper surface 120, 420, 520: sensing element 121, 421: side 130, 430, 530: switching elements 130C, 430C, 530C: semiconductor layer 130D, 430D, 530D: drain 130G, 430G, 530G: gate 130S, 430S, 530S: source 422: upper surface A-A’, B-B’, C-C’, D-D’: hatching Ac: passage area Ad: Drain area AN: Annealing treatment As: source region AW: auxiliary structure B1: Bottom BE: Bottom electrode BF: buffer layer BM: shading layer BW, BWa, BWc: retaining wall structure CA: Groove CM, CMc, CMd: common electrode CO: conductive oxide layer D1, D2, D3, D4, D5, D6: Spacing D7: the first distance D8: second spacing D9: third spacing DL: data line DP: doping process E1: first end E2: second end F, Fa, Fb, Fc: Wall I1, I2, I3, I41, I42, I51, I52: insulating layer Lb, Lba, Ls: Length LI: Intrinsic semiconducting layer LN: N-type semiconductor layer LP: P-type semiconductor layer MR: metal reflective layer OA: optical adhesive layer OH: end OP: opening PL1, PL2, PL3, PL4, PL5, PL6, PL7: Flattened layers PN: photoelectric conversion layer S1: side wall SI: Intrinsic Semiconductor Pattern SL: scan line SN: N-type semiconductor pattern SP: P-type semiconductor pattern SS: Sensing element layer TE: upper electrode UC: end V1, V2, V3, V4, V5, V6, V7, V8, VA: Through hole Wc: width WT: wavelength conversion layer WW: switching element layer X-X’, Y-Y’: direction θ: included angle

FIG. 1A is a schematic partial top view of a sensing device 10 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. FIG. 2 is a schematic partial top view of a sensing device 20 according to an embodiment of the invention. FIG. 3A is a schematic partial top view of a sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line B-B' of Fig. 3A. 4A(a) to 4E(b) are partial cross-sectional schematic diagrams of the steps of the manufacturing method of the sensing device 40 according to an embodiment of the present invention, wherein, FIG. 4A(b), FIG. 4B(b), and FIG. 4C (b), Fig. 4D(b) and Fig. 4E(b) are respectively along the section in Fig. 4A(a), Fig. 4B(a), Fig. 4C(a), Fig. 4D(a) and Fig. 4E(a) Schematic cross-section made by line C-C'. FIG. 5A is a schematic partial top view of a sensing device 50 according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the section line D-D' of Fig. 5A.

10: Sensing device

110: Substrate

120: sensing element

121: side

130: switch element

130C: semiconductor layer

130D: drain

130G: Gate

130S: source

A-A': hatching

BW: retaining wall structure

CM: common electrode

DL: data line

F: wall

Lb: Length

SL: scan line

TE: upper electrode

V1, V2, VA: through hole

Wc: width

X-X', Y-Y': Direction

Claims (19)

A sensing device comprising: Substrate; a sensing element located on the substrate; a switching element located on one side of the sensing element; and a retaining wall structure electrically connecting the sensing element and the switching element, Wherein the wall surface of the retaining wall structure is parallel to the side of the sensing element adjacent to the switching element. The sensing device according to claim 1, wherein the wall surface of the retaining wall structure is perpendicular to the upper surface of the substrate. The sensing device according to claim 1, wherein the barrier structure is located between the semiconductor layer of the switching element and the photoelectric conversion layer of the sensing element. The sensing device according to claim 3, wherein the side of the sensing element adjacent to the switching element includes at least a side of the photoelectric conversion layer, and the side of the photoelectric conversion layer is perpendicular to the the upper surface of the substrate. The sensing device as claimed in claim 1, wherein the source of the switching element is part of the barrier structure. The sensing device as claimed in claim 5, wherein the retaining wall structure is electrically connected to the lower electrode of the sensing element. The sensing device according to claim 6, further comprising an auxiliary structure electrically connected to the source electrode and the lower electrode, and the angle between the extension surface of the auxiliary structure and the upper surface of the substrate is less than 90 degrees. The sensing device according to claim 7, wherein the distance between the first end of the auxiliary structure electrically connected to the source electrode and the substrate is greater than the second end of the auxiliary structure electrically connected to the lower electrode end to the substrate spacing. The sensing device according to claim 1, wherein the length of the retaining wall structure in the extending direction of the wall surface is greater than the width of the semiconductor layer of the switching element parallel to the extending direction. The sensing device according to claim 1, wherein the length of the retaining wall structure in the extension direction of the wall surface is not less than the length of the side surface of the sensing element in a direction parallel to the extension direction length. The sensing device according to claim 1, wherein the distance between the semiconductor layer of the switching element and the substrate is smaller than the distance between the sensing element and the substrate. The sensing device according to claim 1, further comprising a metal oxide layer, and the metal oxide layer is laminated on the retaining wall structure. The sensing device according to claim 1, wherein the wall surface of the retaining wall structure is L-shaped, and the side surface of the sensing element adjacent to the switching element is L-shaped. The sensing device according to claim 13, wherein the source of the switching element and the drain of the switching element belong to different film layers. A sensing device comprising: Substrate; a sensing element layer located on the substrate and including a plurality of sensing elements; a wavelength conversion layer located on a side of the sensing element layer away from the substrate; and a switch element layer, located between the sensing element layer and the wavelength conversion layer, and including a plurality of switch elements, Wherein the plurality of switching elements are respectively electrically connected to a side of the plurality of sensing elements away from the wavelength conversion layer. The sensing device as claimed in claim 15, wherein the plurality of sensing elements are physically connected to each other. The sensing device according to claim 15, wherein the sensing element layer has a plurality of through holes, and the sensing element is located between the plurality of through holes. The sensing device according to claim 17, wherein the sources of the plurality of switching elements are electrically connected to the lower electrodes of the plurality of sensing elements through the plurality of through holes respectively. The sensing device according to claim 15, further comprising a light-shielding structure located between the wavelength conversion layer and the switching element layer, and having a plurality of openings, wherein the plurality of openings respectively overlap the plurality of sensing elements. measuring components.

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