TWM472311U - The light sensor - Google Patents
The light sensor Download PDFInfo
- Publication number
- TWM472311U TWM472311U TW102218942U TW102218942U TWM472311U TW M472311 U TWM472311 U TW M472311U TW 102218942 U TW102218942 U TW 102218942U TW 102218942 U TW102218942 U TW 102218942U TW M472311 U TWM472311 U TW M472311U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- stacked
- metal
- molybdenum
- electrode
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 104
- 239000002184 metal Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000005693 optoelectronics Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 219
- 238000005530 etching Methods 0.000 claims description 32
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims description 17
- 239000011733 molybdenum Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- BYUANIDVEAKBHT-UHFFFAOYSA-N [Mo].[Bi] Chemical compound [Mo].[Bi] BYUANIDVEAKBHT-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 claims 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 31
- 230000007704 transition Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZPJRWSNUOYZUSO-UHFFFAOYSA-N [Y].[Mo] Chemical compound [Y].[Mo] ZPJRWSNUOYZUSO-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum germanium Chemical compound 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
本創作係有關一種光感測器，特別是關於一種改善膜層轉折處蝕刻殘之光感測器，其於製程中改善蝕刻殘現象。
The present invention relates to a light sensor, and more particularly to an optical sensor for improving the etching residue at a film transition, which improves the etching residual phenomenon in the process.
按，數位式X射線感測器(digital X－ray sensor)的技術可分為直接型數位式X射線感測器(direct digital x－ray sensor)及非直接型數位式X射線感測器(indirect digital x－ray sensor)。兩者技術差異主要是在於將X射線(X－ray)轉換成電子訊號的流程不同，故各有其設計上的結構差異。其中，非直接型數位式X射線感測器的結構則主要是薄膜電晶體陣列之上形成感光二極體(photo diode)，而且，此架構之感光二極體的膜厚須有一定的厚度，所以，當感光二極體的膜厚到達一特定厚度時，薄膜電晶體之膜層轉折處將因感光二極體之二極體層蝕刻不完全而造成蝕刻殘現象。According to the digital X-ray sensor technology, it can be divided into a direct digital x-ray sensor and an indirect digital X-ray sensor. Indirect digital x-ray sensor). The technical difference between the two is mainly because the process of converting X-rays into electronic signals is different, so each has its structural difference in design. Among them, the structure of the indirect type digital X-ray sensor is mainly to form a photodiode on the thin film transistor array, and the thickness of the photodiode of the structure must have a certain thickness. Therefore, when the film thickness of the photodiode reaches a certain thickness, the film transition of the thin film transistor will cause etching residue due to incomplete etching of the diode layer of the photodiode.
因此，一般遇到上述蝕刻殘現象時，解決方式為增加蝕刻時間，但是，過長的蝕刻時間會造成感光二極體之元件缺陷，而產生漏電的情形。故，利用增加蝕刻時間的方式並無法解決薄膜電晶體之膜層轉折處的蝕刻殘現象。Therefore, when the above etching residual phenomenon is generally encountered, the solution is to increase the etching time. However, an excessively long etching time may cause a defect in the element of the photosensitive diode, and a leakage may occur. Therefore, the etching residual phenomenon at the film transition of the thin film transistor cannot be solved by increasing the etching time.
鑒於習知感測器的問題，本創作提出一種光感測器，其改善膜層轉折處之膜厚過厚所產生蝕刻殘的現象。
In view of the problems of the conventional sensor, the present invention proposes a photo sensor which improves the phenomenon of etching residue caused by excessive film thickness at the corner of the film layer.
本創作之主要目的之一，係提供一種光感測器，其膜層利用階梯堆疊之方式而改善膜層轉折處之膜厚過厚所產生的蝕刻殘現象。One of the main purposes of the present invention is to provide a photosensor in which the film layer is stepped and stacked to improve the etching residual phenomenon caused by the film thickness at the transition of the film layer being too thick.
本創作之主要目的之一，係提供一種光感測器，其控制膜層的厚度及線阻抗，以改善膜層轉折處之膜厚過厚所產生的蝕刻殘現象。One of the main purposes of the present invention is to provide a photosensor that controls the thickness and line resistance of the film layer to improve the etching residual phenomenon caused by excessive film thickness at the film transition.
為了達到上述所指稱之目的與功效，本創作係提供一種光感測器，其包含一基板、一開關元件及一光電元件。開關元件及光電元件設於基板之上，開關元件包含一第一金屬層、一絕緣層、一歐姆接觸層及一第二金屬層。絕緣層堆疊於該第一金屬層之上，歐姆接觸層堆疊於該絕緣層之上，第二金屬層堆疊於該歐姆接觸層之上。光電元件包含第二金屬層、一二極體層、一電極層。二極體層堆疊於第二金屬層之上，電極層堆疊於二極體層之上。In order to achieve the above-mentioned purpose and effect, the present invention provides a photo sensor comprising a substrate, a switching element and a photoelectric element. The switching element and the photovoltaic element are disposed on the substrate, and the switching element comprises a first metal layer, an insulating layer, an ohmic contact layer and a second metal layer. An insulating layer is stacked on the first metal layer, an ohmic contact layer is stacked on the insulating layer, and a second metal layer is stacked on the ohmic contact layer. The photovoltaic element comprises a second metal layer, a diode layer, and an electrode layer. The diode layer is stacked on the second metal layer, and the electrode layer is stacked on the diode layer.
其中，第二金屬層包含複數子金屬層，該些子金屬層間以階梯堆疊之方式形成於歐姆接觸層之上。The second metal layer includes a plurality of sub-metal layers formed on the ohmic contact layer in a step-by-step manner.
或者，第二金屬層小於一特定厚度，並線阻抗為0.3~0.5歐姆/平方。
Alternatively, the second metal layer is less than a specific thickness and has a line impedance of 0.3 to 0.5 ohms/square.
10‧‧‧光感測器
20‧‧‧開關元件
21‧‧‧第一金屬層
23‧‧‧絕緣層
25‧‧‧歐姆接觸層
27‧‧‧第二金屬層
271‧‧‧子金屬層
273‧‧‧子金屬層
275‧‧‧第一電極
277‧‧‧第二電極
279‧‧‧第二金屬層
29‧‧‧第一鈍態層
290‧‧‧第一孔洞
291‧‧‧蝕刻殘
30‧‧‧光電元件
31‧‧‧二極體層
33‧‧‧電極層
40‧‧‧第二鈍態層
41‧‧‧第二孔洞
43‧‧‧第三孔洞
60‧‧‧第三金屬層
61‧‧‧第一導體
63‧‧‧第二導體
70‧‧‧保護層
80‧‧‧基板
10‧‧‧Light sensor
20‧‧‧Switching elements
21‧‧‧First metal layer
23‧‧‧Insulation
25‧‧‧Ohm contact layer
27‧‧‧Second metal layer
271‧‧‧Submetal layer
273‧‧‧Submetal layer
275‧‧‧First electrode
277‧‧‧second electrode
279‧‧‧Second metal layer
29‧‧‧First passive layer
290‧‧‧ first hole
291‧‧‧ etching residue
30‧‧‧Optoelectronic components
31‧‧‧ diode layer
33‧‧‧Electrode layer
40‧‧‧second passive layer
41‧‧‧Second hole
43‧‧‧ third hole
60‧‧‧ third metal layer
61‧‧‧First conductor
63‧‧‧Second conductor
70‧‧‧Protective layer
80‧‧‧Substrate
第一圖：其係為本創作之光感測器之一實施例的結構圖；及
第二圖：其係為本創作之光感測器之另一實施例的結構圖。
The first figure is a structural diagram of an embodiment of the optical sensor of the present invention; and the second figure is a structural diagram of another embodiment of the optical sensor of the present invention.
為使 貴審查委員對本創作之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：In order to give your reviewers a better understanding and understanding of the characteristics of the creation and the efficacies achieved, please provide a better example and a detailed description of the following:
請參閱第一圖，為本創作之光感測器之一實施例的結構圖。如圖所示，光感測器10包含一基板80、一開關元件20及一光電元件30。開關元件20及光電元件30設於基板80之上，開關元件20包含一第一金屬層21、一絕緣層23、一歐姆接觸層25及一第二金屬層27。光電元件30包含第二金屬層27、一二極體層31及一電極層33。再者，絕緣層23堆疊於第一金屬層21之上，歐姆接觸層25堆疊於絕緣層23之上，第二金屬層27堆疊於歐姆接觸層25之上。二極體層31堆疊於第二金屬層27之上，電極層33堆疊於二極體層31之上。Please refer to the first figure, which is a structural diagram of an embodiment of the optical sensor of the present invention. As shown, the photo sensor 10 includes a substrate 80, a switching element 20, and a photovoltaic element 30. The switching element 20 and the photovoltaic element 30 are disposed on the substrate 80. The switching element 20 includes a first metal layer 21, an insulating layer 23, an ohmic contact layer 25, and a second metal layer 27. The photovoltaic element 30 includes a second metal layer 27, a diode layer 31, and an electrode layer 33. Furthermore, the insulating layer 23 is stacked on the first metal layer 21, the ohmic contact layer 25 is stacked on the insulating layer 23, and the second metal layer 27 is stacked on the ohmic contact layer 25. The diode layer 31 is stacked on the second metal layer 27, and the electrode layer 33 is stacked on the diode layer 31.
再者，本創作之光感測器10更包含一第一鈍態層29、一第二鈍態層40、一第一孔洞290、一第二孔洞41、一第三孔洞43、一第三金屬層60及一保護層70。第一鈍態層29堆疊於第二金屬層27之上，第二鈍態層40堆疊於第一鈍態層29及電極層33之上，而且，二極體層31同時堆疊於第二金屬層27及第一鈍態層29之上。第一孔洞290貫穿第一鈍態層29以裸露第二金屬層27之一第一電極275，第二孔洞41貫穿第二鈍態層40並與第一孔洞290裸露第一電極275，第三孔洞43貫穿第二鈍態層40以裸露電極層33。第三金屬層60堆疊於第二鈍態層40之上，保護層70堆疊於第三金屬層60及第二鈍態層40之上。Furthermore, the optical sensor 10 of the present invention further includes a first passive layer 29, a second passive layer 40, a first hole 290, a second hole 41, a third hole 43, and a third. Metal layer 60 and a protective layer 70. The first passivation layer 29 is stacked on the second metal layer 27, the second passivation layer 40 is stacked on the first passivation layer 29 and the electrode layer 33, and the diode layer 31 is simultaneously stacked on the second metal layer. 27 and above the first passive layer 29. The first hole 290 penetrates the first passive layer 29 to expose one of the first electrodes 275 of the second metal layer 27, the second hole 41 penetrates the second passive layer 40 and exposes the first electrode 275 with the first hole 290, and the third The hole 43 penetrates the second passivation layer 40 to expose the electrode layer 33. The third metal layer 60 is stacked on the second passive layer 40, and the protective layer 70 is stacked on the third metal layer 60 and the second passive layer 40.
承接上述，第二金屬層27包含第一電極275及一第二電極277，而且，第一電極275及第二電極277例如為一源極及一汲極。第一電極275堆疊於歐姆接觸層25之上及歐姆接觸層25之一側，第二電極277堆疊於歐姆接觸層25之上及歐姆接觸層25之另一側，再者，光電元件30亦包含第二電極277。第三金屬層60包含一第一導體61及一第二導體63。第一導體61形成於第一孔洞290及第二孔洞41內以電性連接第一電極275，第二導體63形成於第三孔洞43內以電性連接電極層33。The second metal layer 27 includes a first electrode 275 and a second electrode 277, and the first electrode 275 and the second electrode 277 are, for example, a source and a drain. The first electrode 275 is stacked on the ohmic contact layer 25 and on one side of the ohmic contact layer 25. The second electrode 277 is stacked on the ohmic contact layer 25 and on the other side of the ohmic contact layer 25. Further, the photovoltaic element 30 is also A second electrode 277 is included. The third metal layer 60 includes a first conductor 61 and a second conductor 63. The first conductor 61 is formed in the first hole 290 and the second hole 41 to electrically connect the first electrode 275 , and the second conductor 63 is formed in the third hole 43 to electrically connect the electrode layer 33 .
復參閱第一圖，光感測器10的各膜層的厚度可以依據需求進行設計，所以，本創作並未限制各膜層的厚度。然，二極體層31的膜層厚度設計大於或等於一第一特定厚度（例如15000Å），及第二金屬層27的膜層厚度設計為一第二特定厚度以上（例如4000Å）時，將造成第一電極275及第二電極277之膜層轉折處的膜厚過厚，而使開關元件20於製程過程中產生蝕刻殘291現象。如此，本實施例之光感測器10針對此蝕刻殘291現象的解決方式，是將第二金屬層27於不改變厚度下，使第二金屬層27呈階梯狀，而改善開關元件20之蝕刻殘291現象。以下係針對改善開關元件20之蝕刻殘291現象進行詳細的說明。Referring to the first figure, the thickness of each film layer of the photo sensor 10 can be designed according to requirements, so the present invention does not limit the thickness of each film layer. However, when the film thickness of the diode layer 31 is designed to be greater than or equal to a first specific thickness (for example, 15000 Å), and the film thickness of the second metal layer 27 is designed to be a second specific thickness or more (for example, 4000 Å), The film thickness at the transition of the film layer of the first electrode 275 and the second electrode 277 is too thick, so that the switching element 20 generates an etching residue 291 during the process. As such, the photosensor 10 of the present embodiment solves the phenomenon of the etch residue 291 by changing the thickness of the second metal layer 27 so that the second metal layer 27 is stepped, thereby improving the switching element 20 Etching 291 phenomenon. The following is a detailed description of the phenomenon of improving the etching residue 291 of the switching element 20.
本創作之光感測器10將第二金屬層27（第一圖）以階梯堆疊之方式形成於絕緣層23及歐姆接觸層25之上，以改善開關元件20之蝕刻殘291現象。即當二極體層31的膜厚設計大於或等於第一特定厚度，及第二金屬層27的膜厚設計為第二特定厚度，如此，位於開關元件20之第一電極275及第二電極277間之第一鈍態層29的上方會產生蝕刻殘291的現象。所以，本創作將第二金屬層27改以複數子金屬層271、273堆疊於絕緣層23及歐姆接觸層25之上，尤其是該些子金屬層271、273之間以階梯堆疊的方式形成於絕緣層23及歐姆接觸層25之上，而且，該些子金屬層271、273的厚度較佳分別小於2000Å，並線阻抗為0.3~0.5歐姆/平方。如此，該些子金屬層271、273所形成之第二金屬層27的左右兩側明顯呈現階梯狀，而膜層轉折處的厚度也因此降低。故，本創作利用該些子金屬層271、273之間以階梯堆疊的方式形成於絕緣層23及歐姆接觸層25之上，而改善開關元件20之膜層轉折處的蝕刻殘291現象。The photosensor 10 of the present invention forms the second metal layer 27 (first drawing) on the insulating layer 23 and the ohmic contact layer 25 in a step-stacked manner to improve the etching residue 291 of the switching element 20. That is, when the film thickness design of the diode layer 31 is greater than or equal to the first specific thickness, and the film thickness of the second metal layer 27 is designed to be the second specific thickness, the first electrode 275 and the second electrode 277 of the switching element 20 are located. The phenomenon of etching residue 291 occurs above the first passive layer 29. Therefore, the present invention divides the second metal layer 27 into a plurality of sub-metal layers 271, 273 stacked on the insulating layer 23 and the ohmic contact layer 25, in particular, the sub-metal layers 271, 273 are formed in a step-by-step manner. Above the insulating layer 23 and the ohmic contact layer 25, the thickness of the sub-metal layers 271, 273 is preferably less than 2000 Å and the line impedance is 0.3-0.5 ohm/square. Thus, the left and right sides of the second metal layer 27 formed by the sub-metal layers 271, 273 are obviously stepped, and the thickness of the film layer is also reduced. Therefore, the present invention utilizes the sub-metal layers 271, 273 to be formed on the insulating layer 23 and the ohmic contact layer 25 in a step-by-step manner, thereby improving the etching residue 291 phenomenon at the film layer transition of the switching element 20.
承接上述，由於第二金屬層27的左右兩側需呈現階梯狀，所以，該些子金屬層271、273分別具有不同的蝕刻速率，而本創作設計每一子金屬層271、273之間的蝕刻選擇比比值介於1.5~2之間，其中，蝕刻速率較慢的子金屬層271鄰近於絕緣層23及歐姆接觸層25之ㄧ側，而蝕刻速率較快的子金屬層273鄰近於第一鈍態層29及二極體層31之ㄧ側。如此，因該些子金屬層271、273分別具有不同的蝕刻速率，而利於第二金屬層27的左右兩側明顯呈現階梯狀。然，上述蝕刻選擇比比值僅為一舉例，本創作並未限制蝕刻選擇比比值的範疇。In the above, since the left and right sides of the second metal layer 27 are stepped, the sub-metal layers 271 and 273 have different etching rates, respectively, and the design of each of the sub-metal layers 271 and 273 is between The etching selectivity ratio is between 1.5 and 2, wherein the sub-metal layer 271 having a slower etching rate is adjacent to the top side of the insulating layer 23 and the ohmic contact layer 25, and the sub-metal layer 273 having a faster etching rate is adjacent to the first portion. A passivation layer 29 and a side of the diode layer 31. Thus, since the sub-metal layers 271 and 273 have different etching rates, respectively, the left and right sides of the second metal layer 27 are obviously stepped. However, the above etching selection ratio ratio is only an example, and the creation does not limit the scope of the etching selection ratio.
再者，為使該些子金屬層271、273分別具有不同蝕刻速率，該些子金屬層271、273分別為不同材質，例如：該些子金屬層271、273的材質為鉬/鉬鈮、鋁釹/鉬鈮、鉬/鉬鉭、鋁鈮/鉬鉭或鉬鉭/鉻。此外，該些子金屬層271、273為鉬/鉬鈮材質時，其中鈮的原子百分比為5~10%；該些子金屬層271、273為鋁釹/鉬鈮材質時，其中釹的重量百分比為3%，鈮的原子百分比為5~10%；該些子金屬層271、273為鉬/鉬鉭材質時，其中鉭的原子百分比為5~10%；該些子金屬層271、273為鋁鈮/鉬鉭材質時，其中鈮的重量百分比為3%，鉭的原子百分比為5~10%；該些子金屬層271、273為鉬鉭/鉻材質時，其中鉭的原子百分比為5~10%。In addition, in order to make the sub-metal layers 271 and 273 have different etching rates, the sub-metal layers 271 and 273 are respectively made of different materials. For example, the material of the sub-metal layers 271 and 273 is molybdenum/molybdenum crucible. Aluminum tantalum/molybdenum tantalum, molybdenum/molybdenum tantalum, aluminum tantalum/molybdenum tantalum or mo In addition, when the sub-metal layers 271 and 273 are molybdenum/molybdenum crucible materials, wherein the atomic percentage of germanium is 5 to 10%; when the sub-metal layers 271 and 273 are aluminum germanium/molybdenum crucible, the weight of germanium The percentage is 3%, the atomic percentage of bismuth is 5~10%; when the sub-metal layers 271, 273 are molybdenum/molybdenum bismuth materials, the atomic percentage of cerium is 5~10%; the sub-metal layers 271, 273 In the case of aluminum bismuth/molybdenum bismuth material, the weight percentage of cerium is 3%, and the atomic percentage of cerium is 5 to 10%; when the ionic metal layers 271 and 273 are molybdenum yttrium/chromium, the atomic percentage of cerium is 5~10%.
請參閱第二圖，其為本創作之光感測器之另一實施例的結構圖。如圖所示，本創作之光感測器10的另一種解決開關元件20之蝕刻殘291現象的技術。第二圖之第二金屬層279比較第一圖之第二金屬層27，第二金屬層279膜層的厚度小於第二金屬層27膜層的厚度，如此，第一電極275及第二電極277的膜層轉折處會降低膜厚，所以，第二金屬層279的膜厚直接降低即可以改善開關元件20之蝕刻殘291現象，此外，本創作之第二金屬層279的膜層厚度較佳為小於2000Å。然，第二金屬層279的膜厚若降低過多會造成線阻抗的大幅提升，而線阻抗的大幅提升將不利於光感測器10的工作。故，本創作降低第二金屬層279膜層的厚度，並使第二金屬層279線阻抗為0.3~0.5歐姆/平方。Please refer to the second figure, which is a structural diagram of another embodiment of the optical sensor of the present invention. As shown in the figure, another technique of the photosensor 10 of the present invention solves the phenomenon of etching 291 of the switching element 20. The second metal layer 279 of the second figure compares the second metal layer 27 of the first figure, the thickness of the second metal layer 279 film layer is smaller than the thickness of the second metal layer 27 film layer, such that the first electrode 275 and the second electrode The film transition at 277 reduces the film thickness. Therefore, the film thickness of the second metal layer 279 is directly lowered to improve the etching residue 291 of the switching element 20. Further, the thickness of the second metal layer 279 of the present invention is thinner. Good is less than 2000Å. However, if the film thickness of the second metal layer 279 is excessively lowered, the line impedance is greatly increased, and a large increase in the line impedance is disadvantageous to the operation of the photo sensor 10. Therefore, the present invention reduces the thickness of the second metal layer 279 film layer and makes the second metal layer 279 line impedance 0.3 to 0.5 ohms/square.
綜上所述，本創作係揭示一種光感測器。光感測器包含一基板、一開關元件及一光電元件。開關元件及光電元件設於基板之上，開關元件包含第一金屬層、絕緣層、歐姆接觸層及第二金屬層。光電元件包含第二金屬層、二極體層及電極層。再者，絕緣層堆疊於第一金屬層之上，歐姆接觸層堆疊於絕緣層之上，第二金屬層堆疊於歐姆接觸層之上。二極體層堆疊於第二金屬層之上，電極層堆疊於二極體層之上。基於上述，本創作之光感測器的第二金屬層以階梯堆疊之方式或控制第二金屬層的厚度及線阻抗，以改善膜層轉折處之膜厚過厚所產生的蝕刻殘現象。In summary, the present invention discloses a light sensor. The photo sensor comprises a substrate, a switching element and a photoelectric element. The switching element and the photovoltaic element are disposed on the substrate, and the switching element comprises a first metal layer, an insulating layer, an ohmic contact layer and a second metal layer. The photovoltaic element includes a second metal layer, a diode layer, and an electrode layer. Furthermore, the insulating layer is stacked on the first metal layer, the ohmic contact layer is stacked on the insulating layer, and the second metal layer is stacked on the ohmic contact layer. The diode layer is stacked on the second metal layer, and the electrode layer is stacked on the diode layer. Based on the above, the second metal layer of the photosensor of the present invention controls the thickness and line impedance of the second metal layer in a step-by-step manner to improve the etching residual phenomenon caused by the excessive film thickness at the film transition.
惟以上所述者，僅為本創作之較佳實施例而已，並非用來限定本創作實施之範圍，舉凡依本創作申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本創作之申請專利範圍內。However, the above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the variations, modifications, and modifications of the shapes, structures, features, and spirits described in the scope of the patent application. , should be included in the scope of the patent application of this creation.
本創作係實為一具有新穎性、進步性及可供產業利用者，應符合我國專利法所規定之專利申請要件無疑，爰依法提出新型專利申請，祈 鈞局早日賜准專利，至感為禱。
This creative department is a novelty, progressive and available for industrial use. It should meet the requirements of patent applications stipulated in China's Patent Law. It is undoubtedly a new type of patent application, and the Prayer Council will grant patents as soon as possible. prayer.
10‧‧‧光感測器 10‧‧‧Light sensor
20‧‧‧開關元件 20‧‧‧Switching elements
21‧‧‧第一金屬層 21‧‧‧First metal layer
23‧‧‧絕緣層 23‧‧‧Insulation
25‧‧‧歐姆接觸層 25‧‧‧Ohm contact layer
27‧‧‧第二金屬層 27‧‧‧Second metal layer
271‧‧‧子金屬層 271‧‧‧Submetal layer
273‧‧‧子金屬層 273‧‧‧Submetal layer
275‧‧‧第一電極 275‧‧‧First electrode
277‧‧‧第二電極 277‧‧‧second electrode
29‧‧‧第一鈍態層 29‧‧‧First passive layer
290‧‧‧第一孔洞 290‧‧‧ first hole
291‧‧‧蝕刻殘 291‧‧‧ etching residue
30‧‧‧光電元件 30‧‧‧Optoelectronic components
31‧‧‧二極體層 31‧‧‧ diode layer
33‧‧‧電極層 33‧‧‧Electrode layer
40‧‧‧第二鈍態層 40‧‧‧second passive layer
41‧‧‧第二孔洞 41‧‧‧Second hole
43‧‧‧第三孔洞 43‧‧‧ third hole
60‧‧‧第三金屬層 60‧‧‧ third metal layer
61‧‧‧第一導體 61‧‧‧First conductor
63‧‧‧第二導體 63‧‧‧Second conductor
70‧‧‧保護層 70‧‧‧Protective layer
80‧‧‧基板 80‧‧‧Substrate
Claims (10)
一基板；
一開關元件，設於該基板之上，且該開關元件包含：
一第一金屬層；
一絕緣層，堆疊於該第一金屬層之上；
一歐姆接觸層，堆疊於該絕緣層之上；
一第二金屬層，堆疊於該歐姆接觸層之上；
一光電元件，設於該基板的之上，並包含該第二金屬層，且該光電元件更包含：
一二極體層，堆疊於該第二金屬層之上；及
一電極層，堆疊於該二極體層之上；
其中，該第二金屬層包含複數子金屬層，該些子金屬層間以階梯堆疊之方式形成於該歐姆接觸層之上。A light sensor comprising:
a substrate;
a switching element disposed on the substrate, and the switching element comprises:
a first metal layer;
An insulating layer stacked on the first metal layer;
An ohmic contact layer stacked on the insulating layer;
a second metal layer stacked on the ohmic contact layer;
An optoelectronic component is disposed on the substrate and includes the second metal layer, and the photo component further comprises:
a diode layer stacked on the second metal layer; and an electrode layer stacked on the diode layer;
The second metal layer includes a plurality of sub-metal layers formed on the ohmic contact layer in a step-by-step manner.
一第一電極，堆疊於該歐姆接觸層之上及該歐姆接觸層之一側；及
一第二電極，堆疊於該歐姆接觸層之上及該歐姆接觸層之另一側；
其中，該光電元件包含該第二電極。The photo sensor of claim 1, wherein the second metal layer comprises:
a first electrode stacked on the ohmic contact layer and one side of the ohmic contact layer; and a second electrode stacked on the ohmic contact layer and on the other side of the ohmic contact layer;
Wherein, the photoelectric element comprises the second electrode.
一第一鈍態層，堆疊於該第二金屬層之上；及
一第二鈍態層，堆疊於該第一鈍態層及該電極層之上；
其中，該二極體層同時堆疊於該第二金屬層及該第一鈍態層之上。The photo sensor of claim 4, further comprising:
a first passivation layer is stacked on the second metal layer; and a second passivation layer is stacked on the first passivation layer and the electrode layer;
The diode layer is simultaneously stacked on the second metal layer and the first passivation layer.
一第一孔洞，貫穿該第一鈍態層，以裸露該第一電極；
一第二孔洞，貫穿該第二鈍態層，並與該第一孔洞裸露該第一電極；及
一第三孔洞，貫穿該第二鈍態層，以裸露該電極層。The photo sensor of claim 5, further comprising:
a first hole penetrating the first passivation layer to expose the first electrode;
a second hole penetrating the second passivation layer and exposing the first electrode to the first hole; and a third hole extending through the second passivation layer to expose the electrode layer.
一第三金屬層，堆疊於該第二鈍態層之上，並包含一第一導體及一第二導體；及
一保護層，堆疊於該第三金屬層及該第二鈍態層之上；
其中，該第一導體形成於該第一孔洞及該第二孔洞內，以電性連接該第一電極，該第二導體形成於該第三孔洞內，以電性連接該電極層。The photo sensor of claim 6, further comprising:
a third metal layer stacked on the second passivation layer and including a first conductor and a second conductor; and a protective layer stacked on the third metal layer and the second passivation layer ;
The first conductor is formed in the first hole and the second hole to electrically connect the first electrode, and the second conductor is formed in the third hole to electrically connect the electrode layer.
The photosensor according to claim 9, wherein the atomic percentage of germanium in the molybdenum/molybdenum crucible is 5 to 10%, and the weight percentage of germanium in the aluminum/molybdenum crucible is 3%, and the atomic percentage of germanium 5~10%, the atomic percentage of bismuth in molybdenum/molybdenum bismuth is 5~10%, the weight percentage of bismuth in aluminum bismuth/molybdenum bismuth is 3%, the atomic percentage of bismuth is 5~10%, molybdenum bismuth/chromium The atomic percentage of bismuth is 5~10%.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102218942U TWM472311U (en) | 2013-10-09 | 2013-10-09 | The light sensor |
| CN201320777356.7U CN204011425U (en) | 2013-10-09 | 2013-12-02 | Optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102218942U TWM472311U (en) | 2013-10-09 | 2013-10-09 | The light sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM472311U true TWM472311U (en) | 2014-02-11 |
Family
ID=50551820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102218942U TWM472311U (en) | 2013-10-09 | 2013-10-09 | The light sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204011425U (en) |
| TW (1) | TWM472311U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823522B (en) * | 2022-01-19 | 2023-11-21 | 友達光電股份有限公司 | Light sensing device and method for making light sensing device |
-
2013
- 2013-10-09 TW TW102218942U patent/TWM472311U/en not_active IP Right Cessation
- 2013-12-02 CN CN201320777356.7U patent/CN204011425U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823522B (en) * | 2022-01-19 | 2023-11-21 | 友達光電股份有限公司 | Light sensing device and method for making light sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN204011425U (en) | 2014-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5146428B2 (en) | Transparent transistor and manufacturing method thereof | |
| US9583550B2 (en) | Display device | |
| TWI570493B (en) | Display device and method for manufacturing the same | |
| US20190058143A1 (en) | Optoelectronic diodes and electronic devices including same | |
| TWI281746B (en) | Liquid crystal display and method of manufacturing the same | |
| JP2011076080A5 (en) | ||
| TW201919858A (en) | Light-emitting device | |
| CN104898886A (en) | Substrate, preparation method thereof and touch display screen | |
| WO2019052391A1 (en) | Touch control panel and manufacturing method therefor, and touch control display apparatus | |
| TWI497182B (en) | Display device | |
| CN105453269B (en) | Radioscopic image sensor substrate | |
| TW201409683A (en) | Light blocking member and display device including the same | |
| TW201334191A (en) | Thin film transistor | |
| JP2018510490A (en) | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE | |
| US9871079B2 (en) | Image sensor and electronic device including the same | |
| KR20100005457A (en) | Thin film transistor substrate and method for fabricating the same | |
| TW201327835A (en) | Thin film transistor | |
| CN110600517A (en) | Display panel and preparation method thereof | |
| CN104733488A (en) | Organic image sensor and forming method thereof | |
| TW201510798A (en) | Ogs touch panel and method for making the same | |
| TWM472311U (en) | The light sensor | |
| CN104733489A (en) | Organic image sensor and forming method thereof | |
| WO2016155214A1 (en) | Conductive structure and manufacturing method therefor, array substrate and display device | |
| TW201426827A (en) | Touch electrode structure and methods for forming the same | |
| TWI455080B (en) | Structure of touch panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4K | Expiration of patent term of a granted utility model |