CN210443558U - Photoelectric sensor, display panel and display device - Google Patents
Photoelectric sensor, display panel and display device Download PDFInfo
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- CN210443558U CN210443558U CN201922082821.5U CN201922082821U CN210443558U CN 210443558 U CN210443558 U CN 210443558U CN 201922082821 U CN201922082821 U CN 201922082821U CN 210443558 U CN210443558 U CN 210443558U
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Abstract
The embodiment of the utility model provides a photoelectric sensor, display panel and display device relates to and shows technical field. The embodiment of the utility model provides a through set up thin film transistor on the substrate and the photodiode of being connected with thin film transistor, this photodiode is including setting gradually P type layer and the I type layer on thin film transistor, and the I type layer includes that I type region and N type region of conductor ization. By conducting the conductor treatment on the partial region of the I-type layer, the partial region of the I-type layer is converted into a conductor N-type region, and the rest region of the I-type layer is the I-type region, so that no interface exists between the N-type region and the I-type region, the capture of photo-generated carriers is reduced, the photocurrent of the photoelectric sensor is improved, and the photosensitivity of the photoelectric sensor is improved.
Description
Technical Field
The utility model relates to a show technical field, especially relate to a photoelectric sensor, display panel and display device.
Background
The photoelectric sensor has the advantages of high precision, quick response, non-contact, more measurable parameters, simple structure and the like, and is widely applied to various fields, such as integration of the optical sensor in a display panel to realize the function of optical fingerprint identification.
Currently, an optical sensor includes a thin film transistor and a photodiode including a P-type layer, an I-type layer, and an N-type layer, which are stacked.
However, the interface existing between the N-type layer and the I-type layer captures photogenerated carriers, so that the photocurrent of the photosensor is reduced, resulting in a reduction in the photosensitivity thereof.
SUMMERY OF THE UTILITY MODEL
In view of the above, embodiments of the present invention are provided to provide a photosensor, a display panel, and a display device that overcome or at least partially solve the above problems.
In order to solve the above problem, the embodiment of the utility model discloses a photoelectric sensor, include: the photoelectric device comprises a substrate, a thin film transistor arranged on the substrate and a photodiode connected with the thin film transistor; the photodiode comprises a P-type layer and an I-type layer which are sequentially arranged on the thin film transistor, wherein the I-type layer comprises an I-type region and a conductive N-type region.
Optionally, the photoelectric sensor further comprises a protective layer and an encapsulation layer covering the protective layer; the photodiode further includes a first electrode disposed on the encapsulation layer;
the protective layer covers the thin film transistor and the I-type layer; the first electrode is connected with the N-type region through a first via hole penetrating through the packaging layer and the protective layer.
Optionally, the thin film transistor includes:
a first gate electrode disposed on the substrate;
a first insulating layer covering the substrate and the first gate electrode;
an active layer disposed on the first insulating layer;
a second insulating layer covering the first insulating layer and the active layer;
a second gate electrode disposed on the second insulating layer;
a planarization layer covering the second insulating layer and the second gate electrode;
a source and a drain disposed on the planarization layer, the source and the drain connected to the active layer through a second via that penetrates the planarization layer and the second insulating layer;
a third insulating layer covering the planarization layer, the source electrode, and the drain electrode.
Optionally, the thin film transistor further includes an etching barrier layer disposed on the third insulating layer;
the photodiode further comprises a second electrode arranged on the etching barrier layer, and the second electrode is connected with the drain electrode through a third through hole penetrating through the etching barrier layer and the third insulating layer; the P-type layer is disposed on the second electrode, and the I-type layer is disposed on the P-type layer.
Optionally, an orthographic projection of the N-type region on the second electrode is located in a region where an orthographic projection of the P-type layer on the second electrode is located.
Optionally, the P-type layer is disposed on the third insulating layer, and the P-type layer is connected to the drain through a fourth via hole penetrating through the third insulating layer; the I-type layer is arranged on the third insulating layer and covers the P-type layer.
Optionally, an orthographic projection of the N-type region on the third insulating layer does not overlap with an orthographic projection of the P-type layer on the third insulating layer.
Optionally, the material of the I-type layer is a metal oxide.
In order to solve the above problem, an embodiment of the present invention further discloses a display panel, including the above photoelectric sensor.
In order to solve the above problem, an embodiment of the present invention additionally discloses a display device, including the above display panel.
The embodiment of the utility model provides a include following advantage:
in the embodiment of the present invention, by providing the thin film transistor and the photodiode connected to the thin film transistor on the substrate, the photodiode includes the P-type layer and the I-type layer which are sequentially provided on the thin film transistor, and the I-type layer includes the I-type region and the N-type region which is made of a conductor. By conducting the conductor treatment on the partial region of the I-type layer, the partial region of the I-type layer is converted into a conductor N-type region, and the rest region of the I-type layer is the I-type region, so that no interface exists between the N-type region and the I-type region, the capture of photo-generated carriers is reduced, the photocurrent of the photoelectric sensor is improved, and the photosensitivity of the photoelectric sensor is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a conventional photoelectric sensor;
fig. 2 shows a schematic structural diagram of a photoelectric sensor according to an embodiment of the present invention;
fig. 3 shows a schematic structural diagram of another photoelectric sensor according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, a schematic structural diagram of a conventional photosensor is shown.
As shown in fig. 1, the conventional photosensor includes a substrate 111, a first insulating layer 112, an active layer 113, a second insulating layer 114, a gate electrode 115, a planarization layer 116, a source electrode 117, a drain electrode 118, a third insulating layer 119, a first electrode 120, an N-type layer 121, an I-type layer 122, a P-type layer 123, a second electrode 124, a protective layer 125, an encapsulation layer 126, and an electrode connection layer 127; the active layer 113 includes an active region 1131, a lightly doped region 1132, and a heavily doped region 1133.
The photodiode comprises a P-type layer 123, an I-type layer 122 and an N-type layer 121 which are stacked, wherein the N-type layer 121 needs to be manufactured by a single film forming process, and an interface exists between the N-type layer 121 and the I-type layer 122, and can capture photon-generated carriers, so that the photocurrent of the photoelectric sensor is reduced.
In order to improve the photocurrent of the photosensor, embodiments of the present invention provide a photosensor as shown in fig. 2 and 3.
Example one
Referring to fig. 2, a schematic structural diagram of a photoelectric sensor according to an embodiment of the present invention is shown, and fig. 3 shows a schematic structural diagram of another photoelectric sensor according to an embodiment of the present invention.
An embodiment of the utility model provides a photoelectric sensor, include: a substrate 21, a thin film transistor 22 provided over the substrate 21, and a photodiode 23 connected to the thin film transistor 22; the photodiode 23 includes a P-type layer 231 and an I-type layer 232 which are sequentially disposed on the thin film transistor 22, and the I-type layer 232 includes an I-type region 2321 and a N-type region 2322 which is made of a conductor.
The photodiode 23 is a PIN photodiode, and since the I-type layer 232 is usually an N-type semiconductor, which has high resistance and less conduction electrons, a partial region of the I-type layer 232 is subjected to a conductor treatment, so that the conduction electrons in the partial region of the I-type layer 232 are increased, and the partial region of the I-type layer 232 is converted into a conductor N-type region 2322, so that the N-type region 2322 can serve as an N-type layer of the photodiode 23, and a region of the I-type layer 232 which is not conductor is an I-type region 2321.
Therefore, when manufacturing the photodiode 23 in the photoelectric sensor, only the P-type layer 231 and the I-type layer 232 need to be formed in sequence, and then, partial regions of the I-type layer 232 are subjected to conductor processing, so that partial regions of the I-type layer 232 are converted into the N-type region 2322 subjected to conductor processing, and the remaining regions of the I-type layer 232 are the I-type region 2321, so that an interface does not exist between the N-type region 2322 and the I-type region 2321, thereby reducing the capture of photo-generated carriers, improving the photocurrent of the photoelectric sensor, and improving the photosensitivity of the photoelectric sensor. And because an N-type layer is not required to be manufactured by a separate film forming process, one film forming process flow can be reduced.
The P-type layer 231 is made of amorphous silicon, and the I-type layer 232 is made of metal oxide; the amorphous silicon thin film may be deposited by CVD (Chemical Vapor Deposition) or other Deposition methods, and then patterned to form the P-type layer 231, where the patterning process specifically includes steps of photoresist coating, exposure, development, etching, and photoresist removal; a metal oxide film may be deposited using a Sputter process and then patterned to form type I layer 232.
The metal Oxide may be an IGZO (Indium Gallium Zinc Oxide), an ITZO (Indium Tin Zinc Oxide), an IZO (Indium Zinc Oxide), or the like, and includes a metal-oxygen chemical bond, and the plasma of the specific gas is used to bombard a partial region of the I-type layer 232, and the plasma of the specific gas can break the metal-oxygen chemical bond in the material of the partial region and react with oxygen, so that the oxygen in the material of the partial region of the I-type layer 232 is reduced, the metallic property of the material of the partial region of the I-type layer 232 is enhanced and the conductive electrons are increased, so as to implement a conductor treatment on the partial region of the I-type layer 232, and obtain a conductive N-type region 2322.
The specific gas is CHF3(trifluoromethane), Ar (argon) and H2(hydrogen) mixed gas, then the plasma of the specific gas includes C, H, F and Ar plasma, which can break the metal-oxygen in the metal oxideChemical bond and react with oxygen to produce CO2、H2O、O2And the like.
In addition, the material of the I-type layer 122 in the conventional photoelectric sensor is amorphous silicon, the amorphous silicon thin film contains more hydrogen, and the interfaces between the amorphous silicon thin film and other thin films have more defect states, which results in higher dark current of the photodiode in the conventional photoelectric sensor.
And the utility model discloses the material of I type layer 232 is metal oxide, adopts the metal oxide film to replace the amorphous silicon film, can effectively reduce photodiode's dark current, simultaneously, because can not produce a large amount of hydrogen plasma during the deposit metal oxide film, consequently, avoids worsening the characteristic of thin film transistor to reduce thin film transistor's off-state leakage current.
As shown in fig. 2 and 3, the photosensor further includes a protective layer 24 and an encapsulation layer 25 covering the protective layer 24, and the photodiode 23 further includes a first electrode 233 provided on the encapsulation layer 25; the protective layer 24 covers the thin film transistor 22 and the I-type layer 232, and the first electrode 233 is connected to the N-type region 2322 through a first via hole penetrating the encapsulation layer 25 and the protective layer 24.
The material of the protective layer 24 is silicon oxide or silicon nitride, etc., which can be formed by CVD process; the material of the encapsulation layer 25 may be an organic encapsulation material or an inorganic encapsulation material, the organic encapsulation material may be polyacrylate, epoxy resin, or the like, and the inorganic encapsulation material may be silicon oxide, silicon nitride, silicon oxynitride, or the like; the first electrode 233 is made of a transparent conductive material, which may be ITO (Indium Tin Oxide) or IZO, and the first electrode 233 is specifically a top electrode of the photodiode 23.
Specifically, after the thin film transistor 22 is formed on the substrate 21, the P-type layer 231 and the I-type layer 232 may be sequentially formed, the protective layer 24 is formed, the protective layer 24 covers the thin film transistor 22 and the I-type layer 232, the encapsulation layer 25 covering the protective layer 24 is formed, the encapsulation layer 25 and the protective layer 24 are etched by using a plasma etching process, a first via hole penetrating through the encapsulation layer 25 and the protective layer 24 is formed, and finally, the first electrode 233 is formed on the encapsulation layer 25 and is connected to the N-type region 2322 through the first via hole penetrating through the encapsulation layer 25 and the protective layer 24.
When the first via hole is formed by using the plasma, the plasma bombards the I-type layer 232 at the position of the first via hole to realize the conductor treatment of the I-type layer 232 at the position of the first via hole, so that the I-type layer 232 at the position of the first via hole is converted into the N-type region 2322 of the conductor. Therefore, N-type region 2322 is formed by conducting I-type layer 232 at the location of the first via hole when the first via hole penetrating through encapsulation layer 25 and protective layer 24 is formed by using a plasma etching process.
When the first via hole penetrating through the encapsulation layer 25 and the protection layer 24 is formed by adopting a plasma etching process, the N-type region 2322 is formed at the same time, so that a process flow for forming an N-type layer is reduced, and the process of the photoelectric sensor is simplified.
Correspondingly, because the orthographic projection of the N-type region 2322 on the substrate 21 is substantially overlapped with the orthographic projection of the first via hole on the substrate 21, and the aperture of the first via hole in the manufacturing process is usually not very large and is generally smaller than the size of the I-type layer 232, the area occupied by the N-type region 2322 on the surface of the I-type layer 232 away from the substrate 21 is smaller than the area of the whole I-type layer 232, so that the absorption of the N-type region 2322 on incident light is reduced, more incident light can enter the I-type region 2321 in the I-type layer 232, the number of photo-generated carriers is increased, and the photocurrent of the photoelectric sensor is further increased.
In addition, in the conventional photoelectric sensor, an orthographic projection of the second electrode 124 on the substrate 111 is substantially overlapped with an orthographic projection of the I-type layer 122 on the substrate 111, and the area of the second electrode 124 is large, so that when incident light irradiates on the second electrode 124, the second electrode 124 reflects and absorbs the incident light, the intensity of the light incident on the I-type layer 122 is reduced, and the photocurrent of the photoelectric sensor is reduced; and the utility model discloses first electrode 233 is connected with N type region 2322 through the first via hole that runs through encapsulation layer 25 and protective layer 24, and the area of first electrode 233 is less than the area of second electrode 124 among the present photoelectric sensor to the area of first electrode 233 in photodiode 23 has been reduced, makes more incident lights can get into the I type region 2321 of I type layer 232, further improves photoelectric sensor's photocurrent.
As shown in fig. 2 and 3, the thin film transistor 22 includes: a first gate 220 disposed on the substrate 21; a first insulating layer 221 covering the substrate 21 and the first gate 220; an active layer 222 disposed on the first insulating layer 221; a second insulating layer 223 covering the first insulating layer 221 and the active layer 222; a second gate electrode 224 disposed on the second insulating layer 223; a planarization layer 225 covering the second insulating layer 223 and the second gate electrode 224; a source electrode 226 and a drain electrode 227 disposed on the planarization layer 225, the source electrode 226 and the drain electrode 227 being connected with the active layer 222 through a second via hole penetrating the planarization layer 225 and the second insulating layer 223; a third insulating layer 228 covering the planarization layer 225, the source electrode 226, and the drain electrode 227.
Specifically, first, a first gate 220 is formed on a substrate 21 through a patterning process, a first insulating layer 221 covering the substrate 21 and the first gate 220 is deposited, an amorphous silicon layer is formed on the first insulating layer 221 through the patterning process, the amorphous silicon layer is processed by a laser annealing process to obtain a polysilicon layer, then, a second insulating layer 223 covering the first insulating layer 221 and the polysilicon layer is formed, a second gate thin film is deposited on the second insulating layer 223, a photoresist is coated on the second gate thin film, the second gate thin film is etched after exposure and development, a first region of the polysilicon layer, which is not covered with the photoresist, is heavily doped based on the photoresist after exposure and development to obtain a heavily doped region 2223, then, ashing treatment is performed on the remaining photoresist, the second gate thin film is continuously etched based on the photoresist after ashing treatment to obtain a second gate 224, and lightly doping a second region, which is not covered by the photoresist, in the polysilicon layer based on the photoresist after the ashing process to obtain a lightly doped region 2222, finally removing the remaining photoresist, and forming an active layer 222 by secondarily doping the polysilicon layer, wherein the first region and the second region are adjacently arranged, the region, which is not doped, in the polysilicon layer is an active region 2221, and the active layer 222 comprises an active region 2221, a lightly doped region 2222 and a heavily doped region 2223 which are sequentially adjacent to each other.
Then, depositing a planarization layer 225 covering the second insulating layer 223 and the second gate 224, wherein the planarization layer 225 is made of silicon oxide or silicon nitride, etching the planarization layer 225 and the second insulating layer 223 to form a second via penetrating through the planarization layer 225 and the second insulating layer 223, forming a source 226 and a drain 227 on the planarization layer 225 through a patterning process, wherein the source 226 and the drain 227 are connected to the active layer 222 through the second via penetrating through the planarization layer 225 and the second insulating layer 223, specifically, connected to the heavily doped region 2223 in the active layer 222, that is, the position corresponding to the second via is the position of the heavily doped region 2223; finally, a third insulating layer 228 is formed covering the planarization layer 225, the source electrode 226, and the drain electrode 227.
Compared with the thin film transistor in the existing photoelectric sensor, the thin film transistor 22 in the embodiment of the present invention adopts a Dual Gate structure, that is, the thin film transistor 22 includes two gates, namely the first Gate 220 and the second Gate 224, and the thin film transistor 22 with the Dual Gate structure can effectively reduce the leakage current of the thin film transistor 22 and improve the electron mobility.
In one embodiment of the present invention, as shown in fig. 2, the thin film transistor 22 further includes an etching stopper 229 disposed on the third insulating layer 228; the photodiode 23 further includes a second electrode 234 disposed on the etch stopper 229, the second electrode 234 being connected to the drain 227 through a third via hole penetrating the etch stopper 229 and the third insulating layer 228; a P-type layer 231 is disposed on the second electrode 234, and an I-type layer 232 is disposed on the P-type layer 231.
After the third insulating layer 228 is formed, an etch stopper 229 is formed on the third insulating layer 228, then the etch stopper 229 and the third insulating layer 228 are etched to form a third via hole penetrating the etch stopper 229 and the third insulating layer 228, a second electrode 234 is formed on the etch stopper 229, the second electrode 234 is connected to the drain electrode 227 through the third via hole penetrating the etch stopper 229 and the third insulating layer 228, then, a P-type layer 231 is formed on the second electrode 234, and finally, an I-type layer 232 is formed on the P-type layer 231.
By forming the etching stopper 229 on the third insulating layer 228, the source electrode 226 and the drain electrode 227 can be prevented from being damaged by an etching process during the fabrication of the photodiode 23 when the photodiode 23 is fabricated.
The orthographic projection of the P-type layer 231 on the second electrode 234 in the photodiode 23 shown in fig. 2 coincides with the orthographic projection of the I-type layer 232 on the second electrode 234, and the orthographic projection of the N-type region 2322 on the second electrode 234 is located in the region of the orthographic projection of the P-type layer 231 on the second electrode 234. Thus, it can be seen that on the surface of I-type layer 232 facing away from substrate 21, N-type region 2322 occupies an area that is less than the area of the entire I-type layer 232.
Since the N-type region 2322 in the I-type layer 232 occupies a part of the illumination region, the area of the region of the I-type region 2321 in the I-type layer 232 receiving illumination becomes smaller, and in order to ensure that the photocurrent can meet the process requirement, the thickness of the I-type layer 232 needs to be made thicker, that is, the lateral dimension of the I-type layer 232 in the direction parallel to the substrate 21 is smaller than the longitudinal dimension of the I-type layer 232 in the direction perpendicular to the substrate 21. Therefore, the photosensor shown in fig. 2 can be integrated in a high PPI (pixel density) display panel.
It should be noted that the second electrode 234 is specifically a bottom electrode of the photodiode 23, in the photosensor shown in fig. 2, the protective layer 24 covers not only the thin film transistor 22 and the I-type layer 232, but also the P-type layer 231 and a part of the second electrode 234, and an orthographic projection of the P-type layer 231 on the second electrode 234 is located in an area where the second electrode 234 is located.
In another embodiment of the present invention, as shown in fig. 3, the P-type layer 231 is disposed on the third insulating layer 228, and the P-type layer 231 is connected to the drain electrode 227 through a fourth via hole penetrating through the third insulating layer 228; an I-type layer 232 is disposed on the third insulating layer 228 and covers the P-type layer 231.
After the third insulating layer 228 is formed, the third insulating layer 228 is directly etched to form a fourth via hole penetrating the third insulating layer 228, then, a P-type layer 231 is formed on the third insulating layer 228, the P-type layer 231 is connected to the drain 227 through the fourth via hole penetrating the third insulating layer 228, and then, an I-type layer 232 is formed on the third insulating layer 228, and the P-type layer 231 is covered by the I-type layer 232.
Wherein, the orthographic projection of the N-type region 2322 on the third insulating layer 228 does not overlap with the orthographic projection of the P-type layer 231 on the third insulating layer 228.
By forming the small-sized P-type layer 231 on the third insulating layer 228, after the I-type layer 232 is formed, a conductor processing is performed on a partial region of the I-type layer 232 to form an N-type region 2322, so that an orthographic projection of the N-type region 2322 on the third insulating layer 228 is not overlapped with an orthographic projection of the P-type layer 231 on the third insulating layer 228, and accordingly, a lateral dimension of the I-type layer 232 in a direction parallel to the substrate 21 is large, that is, an area of a region of the I-type region 2321 in the I-type layer 232 receiving illumination is large, at this time, a thickness of the I-type layer 232 can be formed to be thin, so that a lateral dimension of the I-type layer 232 in a direction parallel to the substrate 21 is larger than a longitudinal dimension of the I-type layer 232. Therefore, the photosensor shown in fig. 3 can be applied to a display panel having a small thickness.
In addition, in the photosensor shown in fig. 3, a second electrode does not need to be separately provided, the manufacturing process is simple, the drain 227 of the thin film transistor 22 is directly used as the second electrode of the photodiode 23, that is, as the bottom electrode of the photodiode 23, and the P-type layer 231 is directly connected to the drain 227 through the fourth via hole.
In the embodiment of the present invention, by providing the thin film transistor and the photodiode connected to the thin film transistor on the substrate, the photodiode includes the P-type layer and the I-type layer which are sequentially provided on the thin film transistor, and the I-type layer includes the I-type region and the N-type region which is made of a conductor. By conducting the conductor treatment on the partial region of the I-type layer, the partial region of the I-type layer is converted into a conductor N-type region, and the rest region of the I-type layer is the I-type region, so that no interface exists between the N-type region and the I-type region, the capture of photo-generated carriers is reduced, the photocurrent of the photoelectric sensor is improved, and the photosensitivity of the photoelectric sensor is improved.
Example two
The embodiment of the utility model provides a still provide a display panel, including foretell photoelectric sensor.
Specifically, the display panel is a display panel integrated with touch and display functions, a plurality of photoelectric sensors arranged in an array are arranged in the display panel, and the number of the photoelectric sensors is the same as that of pixel units in the display panel and corresponds to that of the pixel units in the display panel.
The photoelectric sensor is arranged in the display panel, so that the optical fingerprint identification function can be realized.
In addition, for the specific description of the photoelectric sensor, reference may be made to the description of the first embodiment, and details of this embodiment are not repeated.
An embodiment of the present invention further provides a display device, including the above-mentioned display panel, the display panel may be an OLED (Organic Light-emitting Diode) display panel.
In the embodiment of the present invention, by providing the thin film transistor and the photodiode connected to the thin film transistor on the substrate, the photodiode includes the P-type layer and the I-type layer which are sequentially provided on the thin film transistor, and the I-type layer includes the I-type region and the N-type region which is made of a conductor. Partial regions of the I-type layer are subjected to conductor treatment, so that the partial regions of the I-type layer are converted into conductive N-type regions, and the rest regions of the I-type layer are I-type regions, so that no interface exists between the N-type regions and the I-type regions, the capture of photo-generated carriers is reduced, the photocurrent of the photoelectric sensor is improved, the photosensitivity of the photoelectric sensor is improved, and the accuracy of fingerprint identification of the display panel is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the invention.
Finally, it should also be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A photosensor, comprising: the photoelectric device comprises a substrate, a thin film transistor arranged on the substrate and a photodiode connected with the thin film transistor; the photodiode comprises a P-type layer and an I-type layer which are sequentially arranged on the thin film transistor, wherein the I-type layer comprises an I-type region and a conductive N-type region.
2. The photosensor of claim 1, further comprising a protective layer and an encapsulation layer covering the protective layer; the photodiode further includes a first electrode disposed on the encapsulation layer;
the protective layer covers the thin film transistor and the I-type layer; the first electrode is connected with the N-type region through a first via hole penetrating through the packaging layer and the protective layer.
3. The photosensor according to claim 1 or 2, wherein the thin film transistor comprises:
a first gate electrode disposed on the substrate;
a first insulating layer covering the substrate and the first gate electrode;
an active layer disposed on the first insulating layer;
a second insulating layer covering the first insulating layer and the active layer;
a second gate electrode disposed on the second insulating layer;
a planarization layer covering the second insulating layer and the second gate electrode;
a source and a drain disposed on the planarization layer, the source and the drain connected to the active layer through a second via that penetrates the planarization layer and the second insulating layer;
a third insulating layer covering the planarization layer, the source electrode, and the drain electrode.
4. The photosensor of claim 3, wherein the thin film transistor further comprises an etch stop layer disposed on the third insulating layer;
the photodiode further comprises a second electrode arranged on the etching barrier layer, and the second electrode is connected with the drain electrode through a third through hole penetrating through the etching barrier layer and the third insulating layer; the P-type layer is disposed on the second electrode, and the I-type layer is disposed on the P-type layer.
5. The photosensor according to claim 4, wherein an orthographic projection of the N-type region on the second electrode is located in a region where an orthographic projection of the P-type layer on the second electrode is located.
6. The photosensor according to claim 3, wherein the P-type layer is disposed on the third insulating layer and is connected to the drain electrode through a fourth via hole penetrating the third insulating layer; the I-type layer is arranged on the third insulating layer and covers the P-type layer.
7. The photosensor of claim 6, wherein an orthographic projection of the N-type region on the third insulating layer does not overlap an orthographic projection of the P-type layer on the third insulating layer.
8. The photosensor of claim 1, wherein the material of the type I layer is a metal oxide.
9. A display panel comprising the photosensor according to any one of claims 1 to 8.
10. A display device characterized by comprising the display panel according to claim 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI812253B (en) * | 2022-01-19 | 2023-08-11 | 友達光電股份有限公司 | Sensing device and fabricating method of the same |
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| TWI812253B (en) * | 2022-01-19 | 2023-08-11 | 友達光電股份有限公司 | Sensing device and fabricating method of the same |
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