CN111540813B - Photoelectric sensor and manufacturing method thereof, detection substrate and detection device - Google Patents
Photoelectric sensor and manufacturing method thereof, detection substrate and detection device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
Abstract
The invention provides a photoelectric sensor, a manufacturing method thereof, a detection substrate and a detection device, and relates to the technical field of photoelectricity. The method comprises the steps of forming a first electrode on a substrate, sequentially forming a photodiode and a first passivation layer on the first electrode, forming a flat layer covering the first passivation layer and the first electrode, then forming a first through hole penetrating through the flat layer and the first passivation layer, and forming a second electrode on the flat layer, wherein the second electrode is connected with the photodiode through the first through hole. Since the second electrode is not directly formed on the photodiode, the step of forming the second electrode is shifted to the step of forming the planarization layer, and therefore, when the second electrode film is etched to form the second electrode, i.e., the upper electrode, no electrode material remains on the surface of the photodiode, mura defects are avoided, and the yield of products is improved.
Description
Technical Field
The invention relates to the field of photoelectric technology, in particular to a photoelectric sensor and a manufacturing method thereof, a detection substrate and a detection device.
Background
The photoelectric sensor has the advantages of high precision, quick response, non-contact, more measurable parameters, simple structure and the like, and is widely applied to various fields, such as integration of the optical sensor in a display panel to realize the function of optical fingerprint identification.
At present, a photosensor includes a photodiode, and an upper electrode and a lower electrode formed on both sides of the photodiode, and after the photodiode is manufactured, an upper electrode film of the photodiode needs to be etched to obtain an upper electrode of the photodiode.
However, when the upper electrode thin film of the photodiode is etched, an electrode material is likely to remain on the surface of the photodiode, resulting in mura defects and affecting the yield of products.
Disclosure of Invention
The invention provides a photoelectric sensor, a manufacturing method thereof, a detection substrate and a detection device, and aims to solve the problem that when an upper electrode film of a photodiode is etched in the prior art, electrode materials are easy to remain on the surface of the photodiode, and mura is poor.
In order to solve the above problems, the present invention discloses a method for manufacturing a photoelectric sensor, comprising:
forming a first electrode on a substrate;
sequentially forming a photodiode and a first passivation layer on the first electrode;
forming a planarization layer covering the first passivation layer and the first electrode;
forming a first via through the planarization layer and the first passivation layer;
and forming a second electrode on the flat layer, wherein the second electrode is connected with the photodiode through the first via hole.
Optionally, the step of sequentially forming the photodiode and the first passivation layer on the first electrode includes:
depositing a PIN film and a first passivation film on the first electrode in sequence;
and etching the first passivation film and the PIN film to sequentially form a photodiode and a first passivation layer.
Optionally, after the step of forming the second electrode on the planarization layer, the method further includes:
forming a third electrode partially covering the planarization layer and the second electrode.
Optionally, a ratio of an orthographic projection area of the first via hole on the substrate to an orthographic projection area of the photodiode on the substrate is greater than 51%.
In order to solve the above problem, the present invention also discloses a photosensor comprising a substrate, a first electrode formed on the substrate, a photodiode and a first passivation layer formed in sequence on the first electrode, and a planarization layer covering the first passivation layer and the first electrode;
the photosensor further includes a second electrode formed on the planarization layer, the second electrode being connected to the photodiode through a first via hole penetrating the planarization layer and the first passivation layer.
Optionally, the photosensor further includes a third electrode, and the third electrode partially covers the planarization layer and the second electrode.
Optionally, a ratio of an orthographic projection area of the first via hole on the substrate to an orthographic projection area of the photodiode on the substrate is greater than 51%.
In order to solve the above problem, the invention also discloses a detection substrate comprising the above photoelectric sensor.
Optionally, the detection substrate further includes a thin film transistor, and the thin film transistor includes:
a substrate;
a gate electrode formed on the substrate;
a gate insulating layer covering the gate electrode and the substrate;
an active layer formed on the gate insulating layer;
the source and drain electrode layer partially covers the gate insulating layer and the active layer and comprises a source electrode and a drain electrode;
a second passivation layer covering the source drain electrode layer, the active layer and the gate insulating layer;
wherein the first electrode of the photosensor is connected to the drain electrode through a second via hole penetrating the second passivation layer.
In order to solve the above problem, the present invention further discloses a detection device, which includes the above detection substrate.
Compared with the prior art, the invention has the following advantages:
a first electrode is formed on a substrate, a photodiode and a first passivation layer are sequentially formed on the first electrode, a flat layer covering the first passivation layer and the first electrode is formed, then a first through hole penetrating through the flat layer and the first passivation layer is formed, a second electrode is formed on the flat layer, and the second electrode is connected with the photodiode through the first through hole. After a first passivation layer is formed on the photodiode, a flat layer covering the first passivation layer is formed, a second electrode is formed on the flat layer and is connected with the photodiode through a first via hole penetrating through the flat layer and the first passivation layer, and the second electrode is not directly formed on the photodiode but is formed after the step of forming the flat layer, so that when the second electrode film is etched to form the second electrode, namely the upper electrode, electrode materials do not remain on the surface of the photodiode, mura defects are avoided, and the yield of products is improved.
Drawings
FIG. 1 shows a cross-sectional view of a prior art photosensor;
FIG. 2 is a flow chart illustrating a method of fabricating a photosensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing a structure of the first electrode, the photodiode, the first passivation layer and the planarization layer after being formed according to the embodiment of the present invention;
FIG. 4 shows a schematic structural diagram after a first via is formed through the planarization layer and the first passivation layer in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the structure of an embodiment of the present invention after forming a second electrode on the planarization layer;
FIG. 6 is a schematic diagram illustrating a planar structure of a probing substrate according to an embodiment of the present invention;
fig. 7 shows a cross-sectional view of a probe substrate according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, a cross-sectional view of a prior art photosensor is shown.
As shown in fig. 1, in the conventional photoelectric sensor, a gate insulating layer 102 and a second passivation layer 103 are formed on a substrate 101, respectively, and then a first electrode 104 is formed on the second passivation layer 103; then, depositing a PIN film and an upper electrode film on the first electrode 104, coating a photoresist on the upper electrode film, exposing and developing the photoresist on the upper electrode film by using a mask plate, so that the photoresist on a partial region of the upper electrode film is removed, etching off the upper electrode film at the photoresist removal region, then etching off the PIN film at the photoresist removal region, obtaining an electrode to be processed and a photodiode 105, wherein at the moment, the orthographic projection of the electrode to be processed on the substrate 101 is overlapped with the orthographic projection of the photodiode 105 on the substrate 101, and in order to ensure the device performance of the photosensor, the orthographic projection of a second electrode 106 on the photodiode 105 on the substrate 101 needs to be arranged to be positioned in the orthographic projection of the photodiode 105 on the substrate 101, so that the electrode to be processed needs to be etched again, to obtain the second electrode 106, and finally, the photoresist remaining on the second electrode 106 is removed.
Forming a photodiode 105 and a second electrode 106 on a first electrode 104 in sequence, forming a first passivation layer 107 covering a second passivation layer 103, the first electrode 104, the photodiode 105 and the second electrode 106, then forming a flat layer 108 on the first passivation layer 107, exposing and developing the flat layer 108 by using a mask plate to obtain a via hole penetrating through the flat layer 108, then forming a third passivation layer 109 on the flat layer 108, coating a photoresist on the third passivation layer 109, exposing and developing the photoresist on the third passivation layer 109 by using the mask plate, and simultaneously etching the third passivation layer 109 and the first passivation layer 107 at a via hole originally penetrating through the flat layer 108 by using an etching process to obtain a via hole penetrating through the third passivation layer 109, the flat layer 108 and the first passivation layer 107; finally, a third electrode 110 is formed on the third passivation layer 109, and the third electrode 110 is connected to the second electrode 106 through a via hole penetrating the third passivation layer 109, the planarization layer 108, and the first passivation layer 107.
Therefore, when the electrode to be processed is etched again, that is, the upper electrode thin film is etched for the second time to obtain the second electrode 106, the electrode material remains on the surface of the photodiode 105, thereby causing mura defect.
Therefore, in the embodiment of the present invention, the step of forming the second electrode is shifted to the step of forming the planarization layer, so that when the second electrode is formed by etching the upper electrode thin film, no electrode material remains on the surface of the photodiode, and mura defect is avoided.
Example one
Referring to fig. 2, a flowchart of a method for manufacturing a photosensor according to an embodiment of the present invention is shown, which may specifically include the following steps:
As shown in fig. 3, a first electrode 32 is formed on a substrate 31 by a patterning process, specifically, a first electrode thin film is deposited on the substrate 31, a tube photoresist is coated on the first electrode thin film, the photoresist on the first electrode thin film is exposed and developed by using a mask plate, so that the photoresist on a partial region on the first electrode thin film is removed, then, the first electrode thin film on the photoresist removal region is etched, so as to obtain a first electrode 32, and finally, the remaining photoresist on the first electrode 32 is removed. The first electrode 32 is made of a transparent conductive material, such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), and the first electrode 32 refers to a lower electrode of the photodiode.
As shown in fig. 3, after forming a first electrode 32 on a substrate 31, a photodiode 33 and a first passivation layer 34 are sequentially formed on the first electrode 32 using a patterning process.
Specifically, step 202 includes sub-steps S21 and S22:
a substep S21 of sequentially depositing a PIN film and a first passivation film on the first electrode;
and a substep S22 of etching the first passivation film and the PIN film to sequentially form a photodiode and a first passivation layer.
As shown in fig. 3, after a first electrode 32 is formed on a substrate 31, a first doped thin film, an intrinsic thin film, a second doped thin film, and a first passivation thin film are sequentially deposited on the first electrode 32, a photoresist is coated on the first passivation thin film, the photoresist on the first passivation thin film is exposed and developed by using a mask plate, such that the photoresist on a partial region on the first passivation thin film is removed, then the first passivation thin film, the second doped thin film, the intrinsic thin film, and the first doped thin film at the photoresist removal region are etched away, such that a photodiode 33 and a first passivation layer 34 are obtained, and finally, the remaining photoresist on the first passivation layer 34 is removed. Wherein an orthographic projection of the first passivation layer 34 on the substrate 31 coincides with an orthographic projection of the photodiode 33 on the substrate 31.
The photodiode 33 includes a first doped layer, an intrinsic layer, and a second doped layer stacked one on another. The first doped layer can be a P-type layer, the intrinsic layer can be an I-type layer, and the second doped layer can be an N-type layer; alternatively, the first doped layer may be an N-type layer, the intrinsic layer may be an I-type layer, and the second doped layer may be an I-type layer.
The material of the first, intrinsic and second doped layers may all be amorphous silicon, however, both the first and second doped layers are implanted with dopant ions. For example, when the first doped layer is a P-type layer, the first doped layer is doped with P-type dopant ions, such as boron ions, and when the second doped layer is an N-type layer, the second doped layer is doped with N-type dopant ions, such as phosphorus ions. The first passivation layer 34 is made of silicon nitride or silicon oxide, and the first passivation film, the second doped film, the intrinsic film, and the first doped film in the photoresist removal region are etched away by using a dry etching process in the embodiment of the present invention, so as to obtain the photodiode 33 and the first passivation layer 34.
In the prior art, after the photodiode 105 and the second electrode 106 are formed by etching, a water washing process is required to deposit the first passivation layer 107, and the water washing process may affect the surface of the photodiode 105, resulting in an increase in leakage current of the photodiode 105. In the embodiment of the present invention, the deposition processes of the PIN film and the first passivation film are continuously performed, and the first passivation film and the PIN film are simultaneously etched to form the photodiode 33 and the first passivation layer 34, so that the surface of the photodiode 33 is protected by the first passivation layer 34, and then the washing process before the planarization layer 35 covering the first passivation layer 34 and the first electrode 32 is formed does not affect the surface of the photodiode 33, thereby preventing the increase of the leakage current of the photodiode 33 due to the washing process. In addition, the embodiment of the present invention needs to ensure that the subsequent processes of forming the first via hole M penetrating through the planarization layer 35 and the first passivation layer 34 and the deposition process of the second electrode film are continuously performed, otherwise, if the waiting time before the deposition process of the second electrode film is long, a water washing process needs to be performed, which also results in an increase in the leakage current of the photodiode 33.
As shown in fig. 3, after sequentially forming a photodiode 33 and a first passivation layer 34 on the first electrode 32 using a patterning process, a planarization layer 35 covering the first passivation layer 34 and the first electrode 32 is formed.
The material of the flat layer 35 may be a resin material, and the flat layer 35 may be formed by a coating process.
In the embodiment of the present invention, after the planarization layer 35 covering the first passivation layer 34 and the first electrode 32 is formed, as shown in fig. 4, the planarization layer 35 is exposed and developed by using a mask to form a via hole penetrating through the planarization layer 35, and then the first passivation layer 34 is continuously etched at the via hole position to form a first via hole M penetrating through the planarization layer 35 and the first passivation layer 34, and the orthographic projection of the first via hole M on the photodiode 33 is located in the region where the photodiode 33 is located.
Wherein, the ratio of the forward projection area of the first via hole M on the substrate 31 to the forward projection area of the photodiode 33 on the substrate 31 is greater than 51%.
For example, the size of the photodiode 33 is 140 μ M, and the size of the first via M is set to be greater than 100 μ M in the embodiment of the present invention, so that the ratio between the forward projection area of the first via M on the substrate 31 and the forward projection area of the photodiode 33 on the substrate 31 in the embodiment of the present invention is greater than (100 × 100)/(140 × 140), i.e., greater than 51%.
Whereas the ratio of the area of the orthographic projection of the existing photo-sensor via, i.e. the via through the third passivation layer 109, the planarization layer 108 and the first passivation layer 107 in fig. 1, on the substrate to the area of the photodiode 105 on the substrate is typically around 0.3%.
By increasing the area of the first via M penetrating through the planarization layer 35 and the first passivation layer 34 and keeping the area of the photodiode 33 unchanged, the subsequently formed second electrode can cover the surface of the photodiode 33 over a large area, thereby improving the performance of the photosensor.
It should be noted that, after the mask is used to expose and develop the planar layer 35 to form a via hole penetrating through the planar layer 35, the planar layer 35 is annealed to improve the performance of the planar layer 35, and then the first passivation layer 34 at the via hole is etched.
In the embodiment of the present invention, after the first via hole M penetrating the planarization layer 35 and the first passivation layer 34 is formed, as shown in fig. 5, the second electrode 36 is formed on the planarization layer 35 using a patterning process, and the second electrode 36 is connected to the photodiode 33 through the first via hole M penetrating the planarization layer 35 and the first passivation layer 34.
Specifically, a second electrode film is deposited on the flat layer 35, a photoresist is coated on the second electrode film, the photoresist on the second electrode film is exposed and developed by using a mask plate, so that the photoresist on a partial region on the second electrode film is removed, then the second electrode film on the photoresist-removed region is etched, a second electrode 36 is obtained, and finally, the remaining photoresist on the second electrode 36 is removed. The material of the second electrode 36 is a transparent conductive material, such as ITO or IZO, and the second electrode 36 refers to an upper electrode of the photodiode 33. The second electrode 36 may be subsequently annealed to improve the performance of the second electrode 36.
It should be noted that, when the second electrode film is etched to form the second electrode 36, the second electrode film at the first via hole M is not etched, the etched region is the other region outside the first via hole M, and the second electrode film and the photodiode 33 are further spaced by the first passivation layer 34 and the planarization layer 35 at the etched region, so that no electrode material remains on the surface of the photodiode 33, and mura defect is avoided.
Further, after step 205, the method further includes: forming a third electrode partially covering the planarization layer and the second electrode.
As shown in fig. 5, after forming the second electrode 36 on the planarization layer 35, a patterning process is used to form a third electrode 37, and the third electrode 37 partially covers the planarization layer 35 and the second electrode 36. The composition process specifically comprises processes of third electrode film deposition, photoresist coating, exposure, development, third electrode film etching, residual photoresist removal and the like. The material of the third electrode 37 is Mo-Al-Mo.
It should be noted that, in the manufacturing process of the photosensor according to the embodiment of the present invention, compared to the photosensor shown in fig. 1, a passivation layer, that is, the third passivation layer 109, is reduced, and correspondingly, a via hole forming process of the third passivation layer 109 is also reduced, that is, a mask process is reduced; moreover, since different etching solutions are used when the second electrode 36 and the third electrode 37 are formed by etching, it is ensured that the second electrode 36 is not etched by the etching solution of the third electrode 37 when the third electrode 37 is formed by using the patterning process. Therefore, the embodiment of the invention can reduce a deposition process and a mask process of the passivation layer and simplify the manufacturing process of the photoelectric sensor under the condition of ensuring the normal manufacturing of the photoelectric sensor.
In the embodiment of the invention, after the first passivation layer is formed on the photodiode, the flat layer covering the first passivation layer is formed, and the second electrode is formed on the flat layer and is connected with the photodiode through the first via hole penetrating through the flat layer and the first passivation layer.
Example two
An embodiment of the present invention further provides a photosensor, as shown in fig. 5, including a substrate 31, a first electrode 32 formed on the substrate 31, a photodiode 33 and a first passivation layer 34 sequentially formed on the first electrode 32, and a planarization layer 35 covering the first passivation layer 34 and the first electrode 32; the photosensor further includes a second electrode 36 formed on the planarization layer 35, the second electrode 36 being connected to the photodiode 33 through a first via hole penetrating the planarization layer 35 and the first passivation layer 34.
As shown in fig. 5, the photosensor further includes a third electrode 37, and the third electrode 37 partially covers the planarization layer 35 and the second electrode 36.
Wherein, the ratio of the orthographic projection area of the first via hole penetrating through the planarization layer 35 and the first passivation layer 34 on the substrate 31 to the orthographic projection area of the photodiode 33 on the substrate 31 is larger than 51%.
In the embodiment of the present invention, the material of the first electrode 32 is a transparent conductive material, and the first electrode 32 refers to a lower electrode of the photodiode 33; the photodiode 33 includes a first doped layer, an intrinsic layer, and a second doped layer which are stacked; the first passivation layer 34 is made of silicon nitride, silicon oxide, or the like; the material of the planarization layer 35 may be a resin material; the material of the second electrode 36 is a transparent conductive material, and the second electrode 36 refers to an upper electrode of the photodiode 33.
The photoelectric sensor can be manufactured by the manufacturing method of the photoelectric sensor described in the first embodiment.
In the embodiment of the invention, after the first passivation layer is formed on the photodiode, the flat layer covering the first passivation layer is formed, and the second electrode is formed on the flat layer and is connected with the photodiode through the first via hole penetrating through the flat layer and the first passivation layer.
EXAMPLE III
Referring to fig. 6, a schematic plan view illustrating a detecting substrate according to an embodiment of the present invention, fig. 7 illustrates a sectional view of a detecting substrate according to an embodiment of the present invention, fig. 7 is a sectional view taken along a section D-D 'shown in fig. 6, and fig. 5 is a sectional view taken along a section C-C' shown in fig. 6.
The embodiment of the invention also provides a detection substrate which comprises the photoelectric sensor.
In addition, the detection substrate further includes a thin film transistor including: a substrate 311; a gate electrode 314 formed on the substrate 311; a gate insulating layer 312 covering the gate electrode 314 and the substrate 311; an active layer 315 formed on the gate insulating layer 312; source and drain electrode layers partially covering the gate insulating layer 312 and the active layer 315, the source and drain electrode layers including a source electrode 316 and a drain electrode 317; a second passivation layer 313 covering the source-drain electrode layer, the active layer 315, and the gate insulating layer 312; wherein the first electrode 32 of the photosensor is connected to the drain electrode 317 through a second via hole penetrating the second passivation layer 313.
Specifically, a gate electrode 314 is formed on a substrate 311 by a patterning process, the gate electrode 314 may be made of a metal material such as aluminum, aluminum alloy, copper, etc., and then a gate insulating layer 312 covering the gate electrode 314 and the substrate 311 is formed, the material of the gate insulating layer 312 may be silicon Oxide, silicon nitride, etc., and then an active layer 315 is formed on the gate insulating layer 312 by the patterning process, the material of the active layer 315 may be IGZO (Indium gallium zinc Oxide), polysilicon, etc.; after the active layer 315 is formed, a source drain electrode layer is formed through a composition process, the source drain electrode layer partially covers the gate insulating layer 312 and the active layer 315, the source drain electrode layer comprises a source electrode 316 and a drain electrode 317, and the source electrode 316 and the drain electrode 317 are made of metal materials such as aluminum, aluminum alloy, copper and the like; next, a second passivation layer 313 covering the source-drain electrode layer, the active layer 315, and the gate insulating layer 312 is formed, the second passivation layer 313 may be made of silicon oxide, silicon nitride, or the like, then a second via hole penetrating the second passivation layer 313 is formed, and then the first electrode 32 of the photosensor is formed on the second passivation layer 313, so that the first electrode 32 of the photosensor is connected to the drain electrode 317 through the second via hole penetrating the second passivation layer 313.
As shown in fig. 6, the probe substrate further includes a gate line 41 and a data line 42, the gate line 41 is connected to a gate electrode 314 of the thin film transistor, and the data line 42 is connected to a source electrode 316 of the thin film transistor.
It is noted that the substrate 31 in the photosensor of the above-described embodiment actually includes the base plate 311, the gate insulating layer 312, and the second passivation layer 313.
In an embodiment of the present invention, the detection substrate includes a photosensor through which visible light is converted into an electrical signal, and a thin film transistor which receives and outputs the electrical signal to display an image.
The embodiment of the present invention further provides a detection apparatus, which includes the above detection substrate, and the detection apparatus may be a Flat Panel X-ray Detector (FPXD).
In the embodiment of the invention, after the first passivation layer is formed on the photodiode, the flat layer covering the first passivation layer is formed, and the second electrode is formed on the flat layer and is connected with the photodiode through the first via hole penetrating through the flat layer and the first passivation layer.
For simplicity of explanation, the foregoing method embodiments are described as a series of acts or combinations, but it should be understood by those skilled in the art that the present invention is not limited by the order of acts or acts described, as some steps may occur in other orders or concurrently with other steps in accordance with the invention. Further, those skilled in the art should also appreciate that the embodiments described in the specification are preferred embodiments and that the acts and modules referred to are not necessarily required by the invention.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The photoelectric sensor, the manufacturing method thereof, the detection substrate and the detection device provided by the invention are described in detail, a specific example is applied in the description to explain the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A method of fabricating a photosensor, comprising:
forming a first electrode on a substrate;
continuously performing a deposition process of a PIN film and a first passivation film, and simultaneously etching the PIN film and the first passivation film to simultaneously form a photodiode and a first passivation layer on the first electrode; wherein the first passivation layer covers the photodiode;
forming a planarization layer covering the first passivation layer and the first electrode;
forming a first via through the planarization layer and the first passivation layer;
and forming a second electrode on the flat layer, wherein the second electrode is connected with the photodiode through the first via hole.
2. The method of claim 1, wherein the step of simultaneously forming the photodiode and the first passivation layer on the first electrode comprises:
depositing a PIN film and a first passivation film on the first electrode in sequence;
and etching the first passivation film and the PIN film to simultaneously form a photodiode and a first passivation layer.
3. The method of claim 1, further comprising, after the step of forming a second electrode on the planarization layer:
forming a third electrode partially covering the planarization layer and the second electrode.
4. The method of claim 1, wherein a ratio between an orthographic area of the first via on the substrate and an orthographic area of the photodiode on the substrate is greater than 51%.
5. A photoelectric sensor is characterized by comprising a substrate, a first electrode formed on the substrate, a photodiode and a first passivation layer which are simultaneously formed on the first electrode, and a flat layer covering the first passivation layer and the first electrode, wherein the orthographic projection of one side surface, away from the substrate, of the photodiode on the substrate is coincident with the orthographic projection of one side surface, close to the substrate, of the first passivation layer on the substrate;
the photosensor further includes a second electrode formed on the planarization layer, the second electrode being connected to the photodiode through a first via hole penetrating the planarization layer and the first passivation layer.
6. The photosensor of claim 5, further comprising a third electrode partially covering the planarization layer and the second electrode.
7. The photosensor of claim 5, wherein a ratio of an orthographic area of the first via on the substrate to an orthographic area of the photodiode on the substrate is greater than 51%.
8. A detection substrate comprising the photoelectric sensor according to any one of claims 5 to 7.
9. The detection substrate of claim 8, further comprising a thin film transistor, the thin film transistor comprising:
a substrate;
a gate electrode formed on the substrate;
a gate insulating layer covering the gate electrode and the substrate;
an active layer formed on the gate insulating layer;
the source and drain electrode layer partially covers the gate insulating layer and the active layer and comprises a source electrode and a drain electrode;
a second passivation layer covering the source drain electrode layer, the active layer and the gate insulating layer;
wherein the first electrode of the photosensor is connected to the drain electrode through a second via hole penetrating the second passivation layer.
10. A probe apparatus comprising the probe substrate according to claim 8 or 9.
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