TW202332022A - Sensing device and method for fabricating the same - Google Patents

Abstract

A sensing device includes a flexible substrate, a reflective layer, a planarization layer, plural switching elements and plural sensing elements. The flexible substrate has plural recesses on its surface. The reflective layer is disposed on the flexible substrate and conforms to an inner surface of the plural recesses. The planarization layer is disposed on the reflective layer. The plural switching elements are disposed on the planarization layer. The plural sensing elements are disposed on the planarization layer and electrically connected to the plural switching elements respectively. A fabricating method of a sensing device is also provided.

Description

Sensing device and manufacturing method thereof

The present invention relates to a photoelectric device and its manufacturing method, and in particular to a sensing device and its manufacturing method.

Due to its excellent performance, light sensors have been widely used in fields such as security inspection, industrial inspection and medical diagnosis. For example, in medical diagnosis, X-ray sensors can be used to capture images of human chest, blood vessels, teeth, etc. Generally speaking, this type of sensor mainly includes thin film transistor (thin film transistor, TFT) and photodiode (photodiode), wherein photodiode can convert light energy into electrical signal, and thin film transistor is used In reading the electrical signal measured by the photodiode.

Traditionally, this type of sensor has an electrostatic protection layer on the back of the substrate, usually an aluminum film or a conductive film. However, gaps, such as air bubbles, will be generated when the substrate is pasted with the conductive film, which will cause interference in the reflection of light penetrating through the gap and reaching the conductive film, resulting in uneven brightness of the sensing image and affecting the sensing quality.

The invention provides a sensing device with good sensing quality.

The invention provides a method for manufacturing a sensing device, which can provide a sensing device with good sensing quality.

One embodiment of the present invention proposes a sensing device, comprising: a flexible substrate with a plurality of grooves on the surface; a reflective layer located on the flexible substrate and conforming to the inner surfaces of the plurality of grooves; a flat layer located on the reflective layer; a plurality of switch elements located on the planar layer; and a plurality of sensing elements located on the planar layer and electrically connected to the plurality of switch elements respectively.

In an embodiment of the present invention, the inner surface of the groove has a flat side surface and a bottom surface or an arc-shaped surface.

In an embodiment of the present invention, the width of the opening of the groove is larger than the width of the bottom surface.

In an embodiment of the present invention, the above-mentioned groove surrounds one sensing element and one switching element, or the above-mentioned groove surrounds four sensing elements and four switching elements.

In an embodiment of the present invention, the ratio of the depth of the groove to the thickness of the flat layer is 0.5 to 0.95.

In an embodiment of the present invention, the above-mentioned reflective layer has a floating or ground potential.

In an embodiment of the present invention, the refractive index difference between the above-mentioned reflective layer and the flat layer is not less than 0.4.

In an embodiment of the present invention, the above-mentioned sensing device further includes a data line and a scanning line electrically connected to a plurality of switching elements, and the data line, the scanning line, and the sensing element are placed between the orthographic projections of the flexible substrate The gap between completely overlaps the orthographic projection of the groove on the flexible substrate.

In an embodiment of the present invention, the above-mentioned flexible substrate is a film type polyimide (film type PI).

In an embodiment of the present invention, the above-mentioned flexible substrate has a thickness of 40 to 400 μm.

In an embodiment of the present invention, the above-mentioned flat layer includes paint-type polyimide (Varnish PI).

In an embodiment of the present invention, the above-mentioned flat layer has a thickness of 5 to 50 μm.

An embodiment of the present invention provides a method for manufacturing a sensing device, including: forming a flexible substrate on a carrier plate, and the surface of the flexible substrate has a plurality of grooves; forming a reflective layer on the flexible substrate, and the reflective layer conforming to the inner surface of the plurality of grooves; and forming a flat layer on the reflective layer, and the flat layer fills the plurality of grooves.

In an embodiment of the present invention, the above-mentioned carrier is a glass substrate.

In an embodiment of the present invention, the above-mentioned plurality of grooves are formed by embossing.

In an embodiment of the present invention, the surface flatness of the above-mentioned flat layer is not less than 90%.

In an embodiment of the present invention, the above-mentioned manufacturing method of the sensing device further includes forming a plurality of switching elements and a plurality of sensing elements on the planar layer, and the plurality of sensing elements are respectively electrically connected to the plurality of switching elements.

In an embodiment of the present invention, the above-mentioned manufacturing method of the sensing device further includes forming a blocking layer on the planar layer before forming the plurality of switching elements.

In an embodiment of the present invention, the above-mentioned manufacturing method of the sensing device further includes removing the carrier board.

In an embodiment of the present invention, the above-mentioned manufacturing method of the sensing device further includes attaching the flexible substrate to the backplane after the carrier is removed, and the rigidity of the backplane is greater than that of the flexible substrate.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or components, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

The terms "about," "approximately," or "substantially" as used herein include stated values and those within ordinary skill in the art, taking into account the measurements in question and the specific amount of error associated with the measurements (i.e., limitations of the measurement system). The average value within an acceptable range of deviation from a specified value as determined by a human being. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately", or "substantially" used herein may select a more acceptable range of deviation or standard deviation based on optical properties, etching properties or other properties, and may not use one standard deviation to apply to all nature.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, may, typically, have rough and/or non-linear features. Additionally, acute corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

FIG. 1A is a schematic top view of a sensing device 10 according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along the section line B-B' of Fig. 1A. In order to make the drawing more concise, FIG. 1A schematically shows the flexible substrate 110 , the switching element 140 , the sensing element 150 , the scanning line SL, the data line DL and the common electrode CM, and omits other components and film layers.

1A to 1C, the sensing device 10 includes: a flexible substrate 110 with a plurality of grooves 112 on its surface; a reflective layer 120 located on the flexible substrate 110 and conforming to the inner surface IS1 of the plurality of grooves 112 a planar layer 130 located on the reflective layer 120 ; a plurality of switch elements 140 located on the planar layer 130 ; and a plurality of sensing elements 150 located on the planar layer 130 and electrically connected to the plurality of switch elements 140 .

In the sensing device 10 according to an embodiment of the present invention, the interference effect of irregularly reflected light can be avoided by a plurality of grooves 112 arranged regularly, and the sensing quality of the sensing device 10 can be improved. Hereinafter, with reference to FIG. 1A to FIG. 1C , the implementation of each element of the sensing device 10 will be continuously described, but the present invention is not limited thereto.

In this embodiment, the flexible substrate 110 may be a flexible substrate, such as film type polyimide (film type PI), but is not limited thereto. For example, the flexible substrate 110 may be polyamide formed by the steps of polymerization, imidization, salivation, drying, stretching, etc. of pyromellitic dianhydride (PMDA) and diaminodiphenyl ether (ODA). imine film. In some embodiments, the thickness of the flexible substrate 110 may be about 40 μm to 400 μm, but the invention is not limited thereto.

A plurality of grooves 112 may be recessed into the flexible substrate 110 from the surface 111 of the flexible substrate 110 . In this embodiment, the inner surface of the groove 112 may have a side surface 112W and a bottom surface 112B, and both the side surface 112W and the bottom surface 112B have substantially flat surfaces, but it is not limited thereto. In some embodiments, the side surface 112W and the bottom surface 112B may have curved surfaces. Therefore, the vertical distance between the bottom surface 112B of the groove 112 and the surface 111 of the flexible substrate 110 is also the depth D1 of the groove 112 being recessed from the surface 111 of the flexible substrate 110 . In some embodiments, the angle θ between the side surface 112W and the bottom surface 112B may be ≥90 degrees, so that the opening width W1 of the groove 112 is greater than the width W2 of the bottom surface 112B.

The arrangement of the grooves 112 is not particularly limited, and is preferably arranged in a regular manner on the surface 111 of the flexible substrate 110 . For example, in some embodiments, the grooves 112 can overlap the scan lines SL and the data lines DL, and present a grid-like pattern on the flexible substrate 110, wherein each grid can roughly overlap a set of mutual electrical connections. The switching element 140 and the sensing element 150 . In other words, the groove 112 can surround a sensing element 150 and a switching element 140 .

In this embodiment, the reflective layer 120 can be disposed on the surface 111 of the flexible substrate 110 and the side surface 112W and the bottom surface 112B of the groove 112, so that the reflective layer 120 can conform to the surface 111, the side surface 112W and the bottom surface 112B. , but not limited to this. In some embodiments, the reflective layer 120 may be disposed only on the side surface 112W and the bottom surface 112B. In some embodiments, the reflective layer 120 may only be disposed on the side surface 112 and the surface 111 . It is worth noting that the surface 111 is located directly below the sensing element 150, so the reflective layer 120 disposed on the surface 111 can directly reflect the incident light from above to the sensing element 150, thereby improving the light utilization of the sensing element 150 Rate. Since the side surface 112W has the same shape and inclination angle, the reflective layer 120 disposed on the side surface 112W can reflect incident light to the sensing element 150 in a uniform manner, thereby improving the light utilization efficiency of the sensing element 150 . In addition, since the bottom surface 112B mainly overlaps the area A1 between the sensing elements 150 , the reflective layer 120 disposed on the bottom surface 112B can also directly or indirectly reflect incident light to the sensing elements 150 in a regular manner.

The material of the reflective layer 120 may include materials with high reflectivity such as metal. For example, the reflective layer 120 may include at least one of aluminum (Al), silicon (Si), silver (Ag), gold (Au) and titanium dioxide (TiO ₂ ). In addition, the reflective layer 120 may have a single-layer or multi-layer structure, for example, the multi-layer structure includes stacked layers of the above materials or stacked layers of the above materials and other materials. In some embodiments, the reflective layer 120 may have a floating or grounding potential.

The planar layer 130 can be filled into the groove 112 to provide a planar surface to facilitate subsequent processes. In this embodiment, the flat layer 130 may be formed by coating polyimide (Varnish PI). In some embodiments, the thickness T1 of the flat layer 130 may be about 5 to 50 μm, such as 15 μm, 30 μm or 45 μm. In some embodiments, the ratio of the depth D1 of the groove 112 to the thickness T1 of the flat layer 130 may be 0.5 to 0.95, such as 0.6, 0.75 or 0.9.

In some embodiments, the refractive index difference between the reflective layer 120 and the flat layer 130 is preferably not less than 0.4, so as to increase the amount of light actually reflected by the reflective layer 120 .

The switching elements 140 may be arranged in an array on the flat layer 130 . For example, in this embodiment, the switching element 140 may include a semiconductor layer 140C, a gate 140G, a source 140S, and a drain 140D, and the insulating layer I1 may be located between the film layer used to form the gate 140G and the film layer used to form the gate 140G. Between the film layers of the source electrode 140S. The region where the semiconductor layer 140C overlaps the gate 140G can be regarded as a channel region of the switching device 140 . The gate 140G is electrically connected to the scan line SL, and the drain 140D is electrically connected to the data line DL. The material of the semiconductor layer 140C may include silicon semiconductor materials (such as polysilicon, amorphous silicon, etc.), oxide semiconductor materials, organic semiconductor materials, and the like. The material of the scan line SL, the data line DL, the gate 140G, the source 140S, and the drain 140D may include a metal with good conductivity, such as aluminum, molybdenum, titanium, copper, and the like.

The sensing elements 150 may be arranged in an array on the planar layer 130 , and each sensing element 150 may be disposed corresponding to one switching element 140 . For example, in this embodiment, each group of switching elements 140 and sensing elements 150 may have a substantially rectangular footprint and be arranged in an array on the flat layer 130, but the present invention is not limited thereto, and The arrangement of the switching element 140 and the sensing element 150 can be changed as required.

In this embodiment, the sensing element 150 may be a photodiode with a PIN junction structure, but is not limited thereto. In other embodiments, the sensing element 150 may be a PN diode with a PN junction structure or a sensing element using silicon rich oxide (SRO) as a sensing layer. Alternatively, in some embodiments, the sensing element 150 may have a tandem structure in which PN junction structures and PIN junction structures are repeatedly arranged. For example, the sensing element 150 may include an upper electrode 150T, a lower electrode 150B and a photoelectric conversion layer 150P, and the photoelectric conversion layer 150P is located between the upper electrode 150T and the lower electrode 150B. The insulating layer 12 may be located between the lower electrode 150B and the photoelectric conversion layer 150P, the insulating layer 12 may have a plurality of openings OP, the openings OP may define the installation area of the photoelectric conversion layer 150P, and the photoelectric conversion layer 150P may contact the lower electrode through the openings OP. 150B.

In some embodiments, the photoelectric conversion layer 150P may include an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, and the intrinsic semiconductor layer is sandwiched between the N-type semiconductor layer and the P-type semiconductor layer to form a PIN junction structure. The material of the intrinsic semiconductor layer may be intrinsic amorphous silicon. The material of the N-type semiconductor layer can be N-type doped amorphous silicon, such as phosphorus-doped amorphous silicon. The material of the P-type semiconductor layer can be P-type doped amorphous silicon, such as boron-doped amorphous silicon. The bottom electrode 150B of the sensing element 150 can be electrically connected to the source 140S of the switching element SW. In some embodiments, the sensing device 10 may further include a common electrode CM and an insulating layer I3, the common electrode CM may be disposed above the sensing element 150, and the insulating layer I3 may be disposed between the sensing element 150 and the common electrode CM, And the upper electrode 150T of the sensing element 150 can be electrically connected to the common electrode CM. In this way, the sensing element 150 can convert the received light energy into an electrical signal, and the sensing device 10 can read the electrical signal detected by the sensing element 150 through the switching element 140 .

In some embodiments, the sensing device 10 may further include a scan line SL and a data line DL, wherein the scan line SL and the gate 140G of the switch element 140 belong to the same film layer, and the scan line SL may be electrically connected. The gate 140G; the data line DL can belong to the same film layer as the source 140S and the drain 140D of the switch element 140 , and the data line DL can be electrically connected to the drain 140D. In some embodiments, the gap G1 between the orthographic projection of the scan line SL on the flexible substrate 110 and the orthographic projection of the sensing element 150 on the flexible substrate 110 can completely overlap the orthographic projection of the groove 112 on the flexible substrate 110 , and the gap G2 between the orthographic projection of the data line DL on the flexible substrate 110 and the orthographic projection of the sensing element 150 on the flexible substrate 110 can completely overlap the orthographic projection of the groove 112 on the flexible substrate 110, so that, The light passing through the gaps G1 and G2 can be focused by the side surface 112W and the bottom surface 112B, so that the reflected light is not easy to diffuse to the sensing elements 150 on both sides, so that the image resolution can be improved.

In some embodiments, the sensing device 10 may further include a barrier layer 160, and the barrier layer 160 may be disposed between the switching element 140 and the sensing element 150 and the planar layer to prevent impurities from entering the switching element 140 and the sensing element 150. Thus, the sensing performance of the sensing device 10 is affected.

In some embodiments, the sensing device 10 may further include a wavelength conversion layer 170 and an insulating layer 14, the wavelength conversion layer 170 may be disposed above the sensing element 150, and the insulating layer 14 may be disposed between the sensing element 150 and the wavelength conversion layer Between 170. The insulating layers I3 and I4 may respectively include organic insulating materials or a stack of organic insulating materials and inorganic insulating materials to form a flat surface on the upper side of the sensing element 150 , which facilitates the disposition of the wavelength converting layer 170 . The wavelength converting layer 170 can convert the wavelength of the light from above the sensing device 10 into a wavelength suitable for the sensing element 150 to absorb, so that the sensing element 150 can generate a corresponding electrical signal. For example, the light from above the sensing device 10 can be X-rays (x-rays), and the X-rays can be absorbed and converted into visible light after being incident on the wavelength conversion layer 170 , and the visible light then enters the sensing element 150 and is absorbed. The photoelectric conversion layer 150P absorbs and generates electrical signals. The material of the wavelength conversion layer 170 can be a scintillator material, such as cesium iodide (CsI), cesium iodide doped with thallium (CsI:Tl), cesium iodide doped with sodium (CsI:Na), doped with Sodium iodide doped with thallium (NaI:Tl), lithium fluoride doped with europium (LiF:Eu), sulphide oxysulfide doped with cerium (Gd ₂ O ₂ S:Tb), sulfur oxide doped with cerium and cerium Gionium (Gd ₂ O ₂ S:Pr,Ce), gadolinium oxysulfide (Gd ₂ O ₂ S:Pr,Ce,F) doped with cerium, cerium or fluorine, yttrium aluminum garnet doped with cerium (YAG:Ce ), europium-doped cadmium iodide (CdI ₂ :Eu), urium-doped lutetium trioxide (Lu ₂ O ₃ :Tb), poly(3-hexylthiophene-2,5-diyl) (P3HT) , bismuth germanate (Bi ₄ Ge ₃ O ₁₂ ), cesium lead bromide (CsPbBr ₃ ), cadmium tungsten oxide (CdWO ₄ ), silver-doped zinc sulfide (ZnS:Ag), cerium-doped yttrium aluminum oxide (YAlO ₃ :Ce), cerium-doped lutetium silicate (Lu ₂ Si ₂ O ₅ :Ce), cerium-doped lanthanum aluminum oxide (LaAlO ₃ :Ce) or lanthanum bromide (LaBr ₃ ).

In some embodiments, the sensing device 10 may further include a back plate 180, which may be located on the side of the flexible substrate 110 opposite to the flat layer 130, so as to enhance the stiffness of the sensing device 10. . In other words, the rigidity of the backplane 180 may be different from that of the flexible substrate 110 , and the rigidity of the backplane 180 may be greater than that of the flexible substrate 110 .

2A to 2D are schematic cross-sectional views of the steps of the manufacturing method of the sensing device 10 according to an embodiment of the present invention. Hereinafter, the manufacturing method of the sensing device 10 will be described with reference to FIG. 2A to FIG. 2D .

Please refer to FIG. 2A , firstly, the flexible substrate 110 is formed on the carrier CA. For example, the surface 113 of the flexible substrate 110 can be bonded to the surface of the carrier CA by bonding. The rigidity of the carrier CA may be greater than that of the flexible substrate 110 , and the glass transition temperature of the carrier CA may be higher than that of the flexible substrate 110 to facilitate the subsequent steps. In this embodiment, the carrier CA is preferably a glass substrate, but not limited thereto. A plurality of grooves 112 are formed on the surface 111 of the flexible substrate 110 , and the grooves 112 may be formed by imprinting, but the invention is not limited thereto.

Referring to FIG. 2B , next, a reflective layer 120 is formed on the flexible substrate 110 , and the reflective layer 120 can at least conform to the side surface 112W of the groove 112 . For example, the reflective layer 120 can conformably adhere to the side surface 112W and the bottom surface 112B of the groove 112 and the surface 111 of the flexible substrate 110 .

Referring to FIG. 2C , then, a flat layer 130 is formed on the reflective layer 120 , and the flat layer 130 fills a plurality of grooves 112 , so as to prevent the ups and downs of the grooves 112 from affecting the subsequent steps. The flat layer 130 can be formed by coating methods, such as roll coat, spin coat, bar coat, screen coat, knife coat cloth (blade coat), etc., so that the surface 131 of the flat layer 130 may have a surface flatness of not less than 90%.

Next, please refer to FIG. 1A and FIG. 2D at the same time, forming a plurality of switching elements 140, a plurality of sensing elements 150, scanning lines SL and data lines DL on the flat layer 130, and the plurality of sensing elements 150 are respectively electrically connected to multiple There are a plurality of switch elements 140 and a plurality of switch elements 140 are electrically connected to the scan line SL and the data line DL. For example, the lower electrode 150B of the sensing element 150 may be electrically or physically connected to the source 140S of the switching element 140, the gate 140G of the switching element 140 is electrically connected to the scan line SL, and the drain 140D of the switching element 140 is electrically connected to the scanning line SL. Sexual connection data line DL. In some embodiments, the blocking layer 160 may be formed on the surface 131 of the planarization layer 130 before forming the switching element 140 to prevent impurities from entering the switching element 140 and affecting the performance of the switching element 140 .

In some embodiments, the insulating layer I3 and the common electrode CM can be formed on the switching element 140 and the sensing element 150 after the switching element 140 and the sensing element 150 are formed, and the insulating layer I3 is located on the common electrode CM and the switching element. 140 and the sensing element 150. In some embodiments, the insulating layer 14 and the wavelength converting layer 170 may be formed on the switching element 140 and the sensing element 150 after the switching element 140 and the sensing element 150 are formed, and the insulating layer 14 is located between the wavelength converting layer 170 and the sensing element 150. between the switching element 140 and the sensing element 150 . The insulating layers I3 and I4 can provide flat top surfaces for setting the common electrode CM and the wavelength conversion layer 170 , the wavelength conversion layer 170 can convert the wavelength of the light from above the sensing device 10 into a wavelength suitable for the sensing element 150 to absorb. Then, the carrier CA can be removed to expose the surface 113 of the flexible substrate 110 .

Next, the flexible substrate 110 can be pasted on the back plate 180 to complete the sensing device 10 as shown in FIGS. 1A to 1C . In some embodiments, the rigidity of the back plate 180 may be greater than that of the flexible substrate 110 to enhance the flexibility of the sensing device 10 . For example, an adhesive material can be used to bond the surface 113 of the flexible substrate 110 to the surface of the backplane 180 . The material of the back plate 180 may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN) or polyimide (PI), but is not limited thereto.

In the following, other embodiments of the present invention are continued to be described using FIGS. 3A to 6 , and the element numbers and related contents of the embodiment in FIGS. 1A to 1C are used, wherein the same or similar numbers are used to represent the same or similar elements , and the description of the same technical content is omitted. For the description of omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1C , which will not be repeated in the following description.

FIG. 3A is a schematic top view of a sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line C-C' of Fig. 3A. 3A to 3B, the sensing device 30 includes a flexible substrate 310 with a plurality of grooves 312 on the surface, a reflective layer 320, a flat layer 130, a plurality of switching elements 140, a plurality of sensing elements 150, and a barrier layer 160. , the wavelength conversion layer 170 , the data lines DL, the scan lines SL and the backplane 180 .

The main difference between the sensing device 30 shown in FIGS. 3A to 3B and the sensing device 10 shown in FIGS. 1A to 1C is that the groove 312 of the sensing device 30 can surround four sensing elements 150 and four switching element 140 . In this way, the distribution area of the groove 312 can be reduced, and the part of the reflective layer 320 located in the groove 312 can still prevent the reflected light from diffusing to the sensing elements 150 on both sides, so that the image resolution can be improved, thereby The sensing quality of the sensing device 30 is improved. In other embodiments, the groove 312 can also surround more sensing elements 150 and switching elements 140 .

FIG. 4 is a schematic cross-sectional view of a sensing device 40 according to an embodiment of the invention. The sensing device 40 includes a flexible substrate 410 with a plurality of grooves 412 on the surface, a reflective layer 420, a flat layer 130, a plurality of sensing elements 150, a barrier layer 160, a wavelength conversion layer 170, a scanning line SL, and an insulating layer I1 ~I4 and backplane 180. The main difference between the sensing device 40 shown in FIG. 4 and the sensing device 10 shown in FIGS. 1A to 1C is that the inner surface IS4 of the groove 412 of the sensing device 40 may have an arcuate surface, and the sensing element The area A1 between 150 completely overlaps the inner surface IS4 of the groove 412 . In this way, the part of the reflective layer 420 located on the inner surface IS4 of the groove 412 also has a curved surface, so that the light incident on the reflective layer 420 through the area A1 can be focused by the curved surface, so that the reflected light is not easy to diffuse. To the sensing elements 150 on both sides, the image resolution can be improved.

FIG. 5 is a schematic cross-sectional view of a sensing device 50 according to an embodiment of the invention. The sensing device 50 includes a flexible substrate 510 with a plurality of grooves 512 on the surface, a reflective layer 520, a flat layer 130, a plurality of sensing elements 150, a blocking layer 160, a wavelength conversion layer 170, a scanning line SL, and an insulating layer I1 ~I4 and backplane 180. The main difference between the sensing device 50 shown in FIG. 5 and the sensing device 10 shown in FIGS. 1A to 1C is that the orthographic projection of each sensing element 150 of the sensing device 50 on the flexible substrate 510 can completely fall Into the orthographic projection of each groove 512 on the flexible substrate 510 . In some embodiments, the sensing elements 150 may overlap the bottom surface 512B of the groove 512, the area A1 between the sensing elements 150 may overlap the side surface 512W of the groove 512, and each groove 512 only overlaps one sensing element. Element 150. In this way, the incident light through the region A1 can be reflected to the sensing element 150 in a uniform manner by the reflective layer 520 disposed on the side surface 512W, and the reflective layer 520 disposed on the bottom surface 512B can reflect incident light from above The light is directly reflected to the sensing element 150 , thereby improving the light utilization efficiency of the sensing device 50 .

FIG. 6 is a schematic cross-sectional view of a sensing device 60 according to an embodiment of the invention. The sensing device 60 includes a flexible substrate 610 with a plurality of grooves 612 on the surface, a reflective layer 620, a flat layer 130, a plurality of sensing elements 150, a barrier layer 160, a wavelength conversion layer 170, a scanning line SL, and an insulating layer I1 ~I4 and backplane 180. The main difference between the sensing device 60 shown in FIG. 6 and the sensing device 50 shown in FIG. 5 is that the groove 612 of the sensing device 60 can overlap a plurality of sensing elements 150, such as two, four, or Nine sensing elements 150 . In this way, the distribution area of the side surface of the groove 612 can be reduced, and the reflective layer 620 can still reflect light to the sensing element 150 in a uniform manner, thereby improving the light utilization efficiency of the sensing device 60 .

In summary, the sensing device of the present invention can improve the uniformity of reflected light and improve the sensing quality by making regular grooves on the flexible substrate and setting the reflective layer on the grooves. Improve light utilization.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 30, 40, 50, 60: sensing device 110, 310, 410, 510, 610: flexible substrate 111, 113: surface 112, 312, 412, 512, 612: grooves 112B, 512B: bottom surface 112W, 512W: side surface 120, 320, 420, 520, 620: reflective layer 130: flat layer 140: switch element 140C: semiconductor layer 140D: drain 140G: gate 140S: source 150: sensing element 150B: Bottom electrode 150P: photoelectric conversion layer 150T: Upper electrode 160: barrier layer 170: wavelength conversion layer 180: Backplane A-A’, B-B’, C-C’: hatching A1: area CA: carrier board D1: Depth DL: data line G1, G2: Gap I1, I2, I3, I4: insulating layer IS1, IS4: inner surface OP: opening SL: scan line T1: Thickness W1, W2: width θ: included angle

FIG. 1A is a schematic top view of a sensing device 10 according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along the section line B-B' of Fig. 1A. 2A to 2D are schematic cross-sectional views of the steps of the manufacturing method of the sensing device 10 according to an embodiment of the present invention. FIG. 3A is a schematic top view of a sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line C-C' of Fig. 3A. FIG. 4 is a schematic cross-sectional view of a sensing device 40 according to an embodiment of the invention. FIG. 5 is a schematic cross-sectional view of a sensing device 50 according to an embodiment of the invention. FIG. 6 is a schematic cross-sectional view of a sensing device 60 according to an embodiment of the invention.

10: Sensing device

110: flexible substrate

111,113: surface

112: Groove

112B: bottom surface

112W: side surface

120: reflective layer

130: flat layer

150: sensing element

150B: Bottom electrode

150P: photoelectric conversion layer

150T: Upper electrode

160: barrier layer

170: wavelength conversion layer

180: Backplane

A1: area

D1: Depth

G1: Gap

I1, I2, I3: insulating layer

IS1: inner surface

OP: opening

SL: scan line

T1: Thickness

W1, W2: width

θ: included angle

Claims (20)

A sensing device comprising: A flexible substrate with multiple grooves on the surface; a reflective layer located on the flexible substrate and disposed in conformity with the inner surfaces of the plurality of grooves; a flat layer located on the reflective layer; a plurality of switching elements on the planar layer; and A plurality of sensing elements are located on the planar layer and electrically connected to the plurality of switching elements respectively. The sensing device according to claim 1, wherein the inner surface of the groove has a flat side surface and a bottom surface or an arc-shaped surface. The sensing device according to claim 2, wherein an opening width of the groove is larger than a width of the bottom surface. The sensing device according to claim 1, wherein the groove surrounds one sensing element and one switching element, or the groove surrounds four sensing elements and four switching elements . The sensing device according to claim 1, wherein the ratio of the depth of the groove to the thickness of the flat layer is 0.5 to 0.95. The sensing device as claimed in claim 1, wherein the reflective layer has a floating or ground potential. The sensing device according to claim 1, wherein the difference in refractive index between the reflective layer and the planar layer is not less than 0.4. The sensing device according to claim 1, further comprising a data line and a scanning line electrically connected to the plurality of switching elements, and the data line, the scanning line and the sensing element are connected to the The gap between the orthographic projections of the flexible substrate completely overlaps the orthographic projection of the groove on the flexible substrate. The sensing device as claimed in claim 1, wherein the flexible substrate is a thin film polyimide. The sensing device as claimed in claim 9, wherein the thickness of the flexible substrate is 40 to 400 μm. The sensing device as claimed in claim 1, wherein the planarization layer comprises a paint-type polyimide. The sensing device according to claim 11, wherein the flat layer has a thickness of 5 to 50 μm. A method of manufacturing a sensing device, comprising: forming a flexible substrate on the carrier, and the surface of the flexible substrate has a plurality of grooves; forming a reflective layer on the flexible substrate, and the reflective layer conforms to inner surfaces of the plurality of grooves; and A flat layer is formed on the reflective layer, and the flat layer fills the plurality of grooves. The method for manufacturing a sensing device according to claim 13, wherein the carrier is a glass substrate. The method for manufacturing a sensing device as claimed in claim 13, wherein the plurality of grooves are formed by embossing. The method for manufacturing a sensing device according to claim 13, wherein the flatness of the flat layer is not less than 90%. The manufacturing method of the sensing device according to claim 13, further comprising forming a plurality of switching elements and a plurality of sensing elements on the planar layer, and the plurality of sensing elements are respectively electrically connected to the plurality of switch element. The method for manufacturing a sensing device as claimed in claim 17 further includes forming a barrier layer on the planar layer before forming the plurality of switching elements. The method for manufacturing a sensing device as claimed in claim 13 further includes removing the carrier plate. The method for manufacturing a sensing device according to claim 19, further comprising attaching the flexible substrate to a backplane after removing the carrier board, and the rigidity of the backplane is greater than that of the flexible substrate rigidity.

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