TWI816769B - 配線基板及製造配線基板之方法 - Google Patents
配線基板及製造配線基板之方法 Download PDFInfo
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- TWI816769B TWI816769B TW108110408A TW108110408A TWI816769B TW I816769 B TWI816769 B TW I816769B TW 108110408 A TW108110408 A TW 108110408A TW 108110408 A TW108110408 A TW 108110408A TW I816769 B TWI816769 B TW I816769B
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- substrate
- diffusion layer
- metal element
- metal
- metal film
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- H—ELECTRICITY
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
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- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1646—Characteristics of the product obtained
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- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2018-061148 | 2018-03-28 | ||
| JP2018061148 | 2018-03-28 |
Publications (2)
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| TW201942957A TW201942957A (zh) | 2019-11-01 |
| TWI816769B true TWI816769B (zh) | 2023-10-01 |
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| TW108110408A TWI816769B (zh) | 2018-03-28 | 2019-03-26 | 配線基板及製造配線基板之方法 |
| TW114109818A TW202531341A (zh) | 2018-03-28 | 2019-03-26 | 配線基板及半導體裝置 |
| TW112132341A TWI880315B (zh) | 2018-03-28 | 2019-03-26 | 配線基板及含有配線基板之半導體裝置 |
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| TW114109818A TW202531341A (zh) | 2018-03-28 | 2019-03-26 | 配線基板及半導體裝置 |
| TW112132341A TWI880315B (zh) | 2018-03-28 | 2019-03-26 | 配線基板及含有配線基板之半導體裝置 |
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| JP (3) | JP7468342B2 (https=) |
| KR (2) | KR20240159006A (https=) |
| CN (2) | CN111868301A (https=) |
| TW (3) | TWI816769B (https=) |
| WO (1) | WO2019188843A1 (https=) |
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| JP7354944B2 (ja) * | 2020-07-06 | 2023-10-03 | トヨタ自動車株式会社 | 配線基板の製造方法 |
| JP7456330B2 (ja) * | 2020-08-21 | 2024-03-27 | トヨタ自動車株式会社 | 配線基板の製造方法 |
| WO2022270253A1 (ja) * | 2021-06-24 | 2022-12-29 | 奥野製薬工業株式会社 | めっき皮膜及びめっき皮膜の製造方法 |
| US12506040B2 (en) | 2021-08-30 | 2025-12-23 | Absolics Inc. | Packaging substrate, semiconductor package, packaging substrate preparation method, and semiconductor package preparation method |
| KR102686710B1 (ko) * | 2021-11-29 | 2024-07-19 | 와이엠티 주식회사 | 표면조도가 낮은 금속박을 이용한 기판의 회로패턴 형성방법 |
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| TW200515535A (en) * | 2003-10-17 | 2005-05-01 | Univ Waseda | Semiconductor multilayer wiring board and method of forming the same |
| US20050249927A1 (en) * | 2000-09-22 | 2005-11-10 | Circuit Foil Japan Co., Ltd. | Copper foil for high-density ultra-fine printed wiring board |
| TW200605184A (en) * | 2004-07-21 | 2006-02-01 | Mitsui Mining & Smelting Co | Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device |
| TW201251542A (en) * | 2011-05-24 | 2012-12-16 | Fujifilm Corp | Printed wiring board, and method for selecting printed wiring board |
| US20170223842A1 (en) * | 2004-11-24 | 2017-08-03 | Dai Nippon Printing Co., Ltd. | Method for manufacturing multilayer wiring board |
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| JPS61236192A (ja) * | 1985-04-12 | 1986-10-21 | 株式会社日立製作所 | セラミツク基板の電極形成方法 |
| JPS63118058A (ja) * | 1986-11-05 | 1988-05-23 | Toyota Motor Corp | セラミツク溶射部材およびその製造方法 |
| JPH08293654A (ja) * | 1995-04-21 | 1996-11-05 | World Metal:Kk | セラミックへの金属被膜形成方法及び金属被覆セラミック構造体 |
| JP2003107523A (ja) * | 2001-09-28 | 2003-04-09 | Hitachi Ltd | 液晶表示装置 |
| DE10392162B4 (de) * | 2002-08-07 | 2012-02-23 | Denso Corporation | Schaltkreiskartenverbindungsstruktur und Herstellungsverfahren hierfür |
| JP2005158887A (ja) * | 2003-11-21 | 2005-06-16 | Dept Corp | 回路基板及びその製造方法 |
| JP4355743B2 (ja) | 2006-12-04 | 2009-11-04 | 株式会社神戸製鋼所 | Cu合金配線膜とそのCu合金配線膜を用いたフラットパネルディスプレイ用TFT素子、及びそのCu合金配線膜を作製するためのCu合金スパッタリングターゲット |
| JP5121299B2 (ja) * | 2007-05-09 | 2013-01-16 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置 |
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2019
- 2019-03-22 CN CN201980020134.0A patent/CN111868301A/zh active Pending
- 2019-03-22 JP JP2020509993A patent/JP7468342B2/ja active Active
- 2019-03-22 CN CN202311150946.1A patent/CN117320265A/zh active Pending
- 2019-03-22 WO PCT/JP2019/012249 patent/WO2019188843A1/ja not_active Ceased
- 2019-03-22 KR KR1020247034782A patent/KR20240159006A/ko active Pending
- 2019-03-22 KR KR1020207027438A patent/KR102720915B1/ko active Active
- 2019-03-26 TW TW108110408A patent/TWI816769B/zh active
- 2019-03-26 TW TW114109818A patent/TW202531341A/zh unknown
- 2019-03-26 TW TW112132341A patent/TWI880315B/zh active
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2020
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2024
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2025
- 2025-04-09 JP JP2025064481A patent/JP2025103022A/ja active Pending
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| US20050249927A1 (en) * | 2000-09-22 | 2005-11-10 | Circuit Foil Japan Co., Ltd. | Copper foil for high-density ultra-fine printed wiring board |
| TW200515535A (en) * | 2003-10-17 | 2005-05-01 | Univ Waseda | Semiconductor multilayer wiring board and method of forming the same |
| TW200605184A (en) * | 2004-07-21 | 2006-02-01 | Mitsui Mining & Smelting Co | Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device |
| US20170223842A1 (en) * | 2004-11-24 | 2017-08-03 | Dai Nippon Printing Co., Ltd. | Method for manufacturing multilayer wiring board |
| TW201251542A (en) * | 2011-05-24 | 2012-12-16 | Fujifilm Corp | Printed wiring board, and method for selecting printed wiring board |
Also Published As
| Publication number | Publication date |
|---|---|
| US12028972B2 (en) | 2024-07-02 |
| CN111868301A (zh) | 2020-10-30 |
| JP7468342B2 (ja) | 2024-04-16 |
| US20240049384A1 (en) | 2024-02-08 |
| JP2024042010A (ja) | 2024-03-27 |
| JPWO2019188843A1 (ja) | 2021-03-25 |
| JP2025103022A (ja) | 2025-07-08 |
| KR20240159006A (ko) | 2024-11-05 |
| TW202531341A (zh) | 2025-08-01 |
| WO2019188843A1 (ja) | 2019-10-03 |
| KR102720915B1 (ko) | 2024-10-24 |
| TW202401528A (zh) | 2024-01-01 |
| US20200404781A1 (en) | 2020-12-24 |
| TWI880315B (zh) | 2025-04-11 |
| TW201942957A (zh) | 2019-11-01 |
| CN117320265A (zh) | 2023-12-29 |
| KR20200136919A (ko) | 2020-12-08 |
| JP7666668B2 (ja) | 2025-04-22 |
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