CN111868301A - 布线基板以及制造布线基板的方法 - Google Patents
布线基板以及制造布线基板的方法 Download PDFInfo
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- CN111868301A CN111868301A CN201980020134.0A CN201980020134A CN111868301A CN 111868301 A CN111868301 A CN 111868301A CN 201980020134 A CN201980020134 A CN 201980020134A CN 111868301 A CN111868301 A CN 111868301A
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- substrate
- diffusion layer
- metal element
- metal
- metal film
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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Abstract
公开一种布线基板。该布线基板具有:基板,包含第1元素;扩散层,与基板相接并包含第1金属元素;以及第1金属膜,与扩散层相接并包含第2金属元素。扩散层具有至少包含第1元素和第1金属元素的区域、及包含第1金属元素和第2金属元素的区域。扩散层中的第2金属元素的浓度也可以在厚度方向上随着接近基板而减少。扩散层中的第1元素的浓度也可以在厚度方向上随着接近第1金属膜而减少。
Description
技术领域
本公开涉及在基板上形成有布线的布线基板、布线基板的制造方法以及包括布线基板的半导体装置。
背景技术
在电子设备中,通常使用包括基板和设置于其上的布线的基本构造(以下,记为布线基板)。这样的布线基板不仅其自身作为半导体装置发挥功能,而且即便作为用于将各种电子部件电连接的基板、或者作为用于将半导体装置安装于电子设备的基板(内插器)也被广泛地应用。开发了用于在基板上设置布线的各种方法,例如在专利文献1、2所公开的方法中,在绝缘性的基板与布线之间设置包含金属氧化物的膜,由此实现基板与布线间的密接性的提高。
在先技术文献
专利文献
专利文献1:日本特表2016/533430号说明书
专利文献2:日本特表2016/533429号说明书
发明内容
发明要解决的课题
本公开的技术问题之一在于提供一种布线基板及其制造方法。例如,本公开的技术问题之一在于提供一种基板与布线间的密接性高的布线基板及其制造方法。或者,本公开的技术问题之一在于提供一种具有该布线基板的半导体装置。
用于解决课题的手段
本公开的实施方式之一是布线基板。该布线基板具有包含第1元素的基板、与基板相接并包含第1金属元素的扩散层、以及与扩散层相接并包含第2金属元素的第1金属膜。扩散层至少具有包含第1元素和第1金属元素的区域、及包含第1金属元素和第2金属元素的区域。
本公开的实施方式之一是布线基板的制造方法。该制造方法包括:将包含第1金属元素的氧化物的第1中间层形成于包含第1元素的基板上的工序;将第1元素向第1中间层扩散,由此将第1中间层变换为第2中间层的工序;将包含第2金属元素的第1金属膜形成于第2中间层之上的工序;以及将第2金属元素向第2中间层扩散,由此将第2中间层变换为扩散层的工序。
附图说明
图1是实施方式之一所涉及的布线基板的示意性的剖视图以及布线基板的厚度方向的浓度分布的示意图。
图2是实施方式之一所涉及的布线基板的、厚度方向上的元素浓度分布的示意图。
图3是实施方式之一所涉及的布线基板的、厚度方向上的元素浓度分布的示意图。
图4是实施方式之一所涉及的布线基板的、厚度方向上的元素浓度分布的示意图。
图5是实施方式之一所涉及的布线基板的、厚度方向上的元素浓度分布的示意图。
图6是实施方式之一所涉及的布线基板的示意性剖视图。
图7是表示实施方式之一所涉及的布线基板的制造方法的示意性剖视图。
图8是表示实施方式之一所涉及的包括布线基板的制造方法的示意性剖视图。
图9是表示实施方式之一所涉及的包括布线基板的制造方法的示意性剖视图。
图10是表示实施方式之一所涉及的包括布线基板的制造方法的示意性剖视图。
图11是实施方式之一所涉及的包括布线基板的半导体装置的示意性剖视图。
图12是实施方式之一所涉及的包括布线基板的半导体装置的示意性剖视图。
图13是实施方式之一所涉及的包括布线基板的半导体装置的示意性剖视图。
图14是实施方式之一所涉及的布线基板的能量分散型X射线分析结果。
具体实施方式
以下,参照附图等,对本公开的各实施方式进行说明。其中,本公开能够在不脱离其主旨的范围内以各种方式来实施,并不限定于以下所例示的实施方式的记载内容进行解释。
为了使说明更加明确,附图与实际的方式相比,有时示意性地表示各部分的宽度、厚度、形状等,但终究只是一例,并不限定本公开的解释。在本说明书和各图中,对具备与关于已出现的图说明过的图相同的功能的要素标注相同的符号,有时省略重复的说明。
在本说明书以及权利要求中,在表述在某构造体的上、或者下配置其他构造体的方式时,在仅表述为“上”,或者“下”的情况下,只要没有特别说明,则包括以与某构造体接触的方式在正上方、或者正下方配置其他构造体的情况、和在某构造体的上方或者正下方经由另外的构造体配置其他构造体的情况这两者。
在本说明书以及权利要求中,“某构造体从其他构造体露出”这一表述是指某构造体的一部分未被其他构造体覆盖的方式,未被该其他构造体覆盖的部分还包括被其他构造体覆盖的方式。
(第1实施方式)
在本实施方式中,对本公开的实施方式之一所涉及的布线基板100进行说明。
1.基本构造
将布线基板100的剖面示意图示于图1的(A)。布线基板100包括基板102、位于基板102上并与基板102相接的扩散层106、位于扩散层106之上并与扩散层106相接的第1金属膜104。作为任意的结构,布线基板100还可以具备位于第1金属膜104之上且与第1金属膜104相接的第2金属膜108。
基板102包含第1元素。在此,第1元素从氧以外的元素中选择,是包含在基板102的主成分中的元素。在本说明书和权利要求中,某结构的主成分是指占其结构的90重量%以上的成分。作为基板102,可例示玻璃基板、石英基板、包含硅、锗、砷化镓、氮化镓等半导体的半导体基板、包含氧化铝、氧化锆等陶瓷的陶瓷基板、包含蓝宝石基板等单晶金属氧化物的基板等。在以玻璃为主成分的基板的情况下,也可以复合树脂。在使用上述基板的情况下,第1元素从硅、锗、铝、锆、砷、氮等中选择。
在上述基板中,玻璃基板能够廉价地获得,显示出优异的绝缘性,因此在将布线基板100用作半导体装置的内插器的情况下是优选的。作为玻璃基板所包含的玻璃,可举出碱石灰玻璃、氟化物玻璃、磷酸玻璃、硼酸玻璃等。
基板102的表面的粗糙度没有限制,例如可以为0.1nm以上、1nm以上、5nm以上。基板102的表面的粗糙度可以为200nm以下、100nm以下、或者50nm以下。基板102的表面的粗糙度可以为0.1nm以上且200nm以下、1nm以上且100nm以下、5nm以上且50nm以下。表面粗糙度例如使用光干涉显微镜进行测定即可。若在基板102上设置厚度比较小的布线,则在其表面反映基板102的表面粗糙度,但通过将基板102的表面粗糙度调整为上述的范围,也能够抑制布线的表面粗糙度的增大。因此,在将布线基板100应用于高频电路基板的情况下,能够降低传输损耗。此外,在通过光刻对布线进行加工的情况下,能够抑制来自曝光机的光的散射,能够防止妨碍布线的微细加工。
在此,表面粗糙度能够通过以下的式所示的参数即算术平均粗糙度Ra来评价。在该式中,L是作为评价对象的基板102上的测定长度,f(x)是将测定长度方向设为x时的高度。Ra是以测定长度对测定长度中的高度的绝对值进行平均而得到的值。
[数1]
算术平均粗糙度Ra的测定方法的一例如下所述。首先,选择多个基板102上的任意的测定区域。测定区域的大小例如为0.30mm×0.22mm的四边形即可。例如,选择基板102上的四角和中央的五处作为测定区域即可。接下来,在多个区域的各个区域中设定任意的两点。该两点间的距离为0.1mm,其相当于测定长度L。测定该两点间的算术平均粗糙度Ra,采用在多个测定区域得到的算术平均粗糙度Ra的平均作为基板102的表面粗糙度。例如,在选择基板102上的四角和中央的五处作为测定区域的情况下,五个测定结果的平均成为基板102的表面粗糙度。另外,也可以在各个测定区域进行多次测定,采用其平均作为一个测定区域中的算术平均粗糙度Ra。算术平均粗糙度Ra例如也能够使用采用了白色干涉计的3D光学轮廓仪(例如Zygo公司制3D光学轮廓仪Zygo New View5000等)进行测定。
第1金属膜104包含0价的金属元素(第2金属元素),作为布线基板100的布线,或者能够作为用于通过电解镀覆法形成在第2金属膜108或布线基板100上设置的各种布线(未图示)的晶种层发挥功能。作为第2金属元素,可举出铜、钛、铬、镍、金等。第1金属膜104的厚度没有限制,例如能够为0.5μm以上、1μm以上或者5μm以上,可以为50μm以下、30μm以下或者20μm以下。第1金属膜104的厚度可以为0.5μm以上且50μm以下、1μm以上且30μm以下或者5μm以上且20μm以下。通过将第1金属膜104的厚度设定为该范围,能够确保作为布线的充分的导电性。此外,例如即使在利用镀敷法形成第1金属膜104的情况下也能够在短时间内形成,即使在通过光刻形成了第1金属膜104的情况下,也能够容易地进行微细加工。
扩散层106具有将第1金属膜104牢固地粘接于基板102的功能,因此,也被称为密接层。扩散层106是通过设置在第1金属膜104与基板102之间的中间层的相互扩散而生成的。中间层包含第1金属元素。例如,中间层包含第1金属的氧化物、或者氮化物,作为第1金属,可举出锌、钛、锆、铝、锡等。中间层的包含第1金属的区域为扩散层106。扩散层106的厚度为1nm以上即可。由此,扩散层106能够追随基板102的表面粗糙度,不仅能够确保第1金属膜104与基板102的高密接性,还能够与第1金属膜104同时实施微细加工。扩散层106的厚度为1μm以下、100nm以下、20nm以下或者10nm以下。扩散层106的厚度可以为1nm以上且1μm以下、1nm以上且100nm以下、1nm以上且20nm以下或者1nm以上且10nm以下。由此,能够在短时间内形成扩散层106,并且在蚀刻等加工时蚀刻残渣不会残留在基板102上,能够使接近的布线间可靠地绝缘。例如在基板102的算术平均粗糙度Ra为5nm的情况下,将扩散层106的厚度设定在10nm以上且20nm以下的范围即可。
2.扩散层的组成
扩散层106中除了第1金属元素以外,还包含基板102所含的第1元素以及第1金属膜104所含的第2金属元素。更具体而言,扩散层106包括以下区域的至少一个:第1元素、第1金属元素以及第2金属元素共存的区域;第1金属元素和第1元素共存的区域;以及第1金属元素和第2金属元素共存的区域。例如,扩散层106可以具有包含第1金属元素和第1元素的区域、及包含第1金属元素和第2金属元素的区域。
因此,扩散层106的厚度不一定与中间层的厚度一致,能够定义为存在上述三个区域中的至少一个的部分的厚度。该情况下的厚度的测定能够通过能量分散型X射线(EDX)分析来进行。具体地说,使用聚焦离子束(FIB:FocusedIonBeam)对在基板102上至少配置有扩散层106和第1金属膜104的试样进行加工而使截面露出,扫描各层间的界面地从基板102侧照射电子束,使用Si漂移检测器等来检测特性X射线。根据特性X射线的强度得到各元素的原子组成分数(atomic%)。由此,得到深度方向的元素分布,确定上述区域。通过计算这些区域中的至少一个存在的部分的厚度,能够得到扩散层106的厚度。
图1的(B)示意性地示出了第1元素、第1金属元素和第2金属元素在布线基板100的厚度方向上的浓度分布。以下,在图1的(B)至图5的(B)中,纵轴为标准化后的元素浓度(即,每单位体积的第1元素、第1金属元素、第2金属元素的原子数),横轴为布线基板100的深度。深度是指沿着第1金属膜104的上表面的法线的、朝向基板102的方向上的距第1金属膜104的上表面的距离。
如图1的(B)所示,第1元素的浓度102a在厚度方向上随着从基板102与扩散层106的界面103接近第1金属膜104而降低。同样地,第2金属元素的浓度104a在厚度方向上随着从扩散层106与第1金属膜104的界面105接近基板102而减少。这些浓度变化可以是连续的。在此,界面103是指位于不存在第1金属元素、或者实质上无法检测第1金属元素的区域与存在第1金属元素或者能够检测第1金属元素的区域之间、并且比第1金属膜104更靠近基板102的面。界面105是指位于不存在第1金属元素或者实质上无法检测第1金属、并且比基板102更靠近第1金属膜104的面(参照图1的(B))。这些界面103、105之间是扩散层106,在扩散层106中,第1金属元素的浓度106a相对于深度的曲线(plot)给出至少一个峰值(图1的(B))。
因此,在扩散层106中,第2金属元素的浓度104a相对于布线基板100的深度的曲线(图1的(B)中的单点划线)与第1元素的浓度相对于深度的曲线(图1的(B)中的虚线)交叉。另外,第1元素的浓度102a、第1金属元素的浓度106a以及第2金属元素的浓度104a例如能够通过EDX分析等进行测定。
在图1的(B)所示的例子中,第2金属元素的浓度104a随着在扩散层106内接近基板102而减少,在界面103上实质上不能检测。同样地,第1元素的浓度102a在扩散层106内随着第1金属膜104而减少,在界面105上实质上无法检测。换言之,第1元素、第1金属元素以及第2金属元素在整个扩散层106中共存。
扩散层106中的第1元素和第2金属元素的浓度分布不限于图1的(B)所示的分布。例如,如图2的(A)所示,扩散层106也可以在界面105侧具有不存在第1元素或者实质上不能检测第1元素的区域106b。或者,如图2(B)所示,扩散层106也可以在界面103侧具有不存在第2金属元素、或者实质上不能检测第2金属元素的区域106c。
或者,如图3的(A)所示,第2金属元素不仅可以包含于扩散层106,也可以包含于基板102。在该情况下,基板102内的第2金属元素的浓度104a随着远离界面103而减少。相反,第1元素不仅可以包含于扩散层106,也可以包含于第1金属膜104(图3的(B))。在该情况下,第1金属膜104内的第1元素的浓度102a随着远离界面105而减少。
扩散层106也可以构成为组合上述的浓度分布。例如,如图4的(A)所示,扩散层106也可以在界面105侧、103侧分别具有区域106b和区域106c这两者。在该情况下,在扩散层106中,第1元素、第1金属元素以及第2金属元素共存的区域被区域106b、106c夹持。
或者,如图4的(B)所示,扩散层106具有区域106c,并且第1元素不仅包含于扩散层106,也可以包含于第1金属膜104。相反,如图5的(A)所示,扩散层106具有区域106b,并且第2金属元素不仅包含于扩散层106,也可以包含于基板102。或者,如图5的(B)所示,第1元素不仅包含于扩散层106,也包含于第1金属膜104,并且,第2金属元素不仅包含于扩散层106,也包含于基板102。
即使在具有任意的浓度分布的情况下,在扩散层106中,第2金属元素的浓度104a相对于布线基板100的深度的曲线也与第1元素的浓度相对于深度的曲线交叉。因此,在扩散层106的任一区域中,除了第1金属元素以外,还包含第1元素和第2金属元素的至少一者,不存在包含第1金属元素但不包含第1元素和第2金属元素这两者的区域。
3.变形例
如图6的(A)所示,布线基板100的基板102也可以具有贯通孔110。在该情况下,扩散层106和第1金属膜104被设置为覆盖基板102的上表面和下表面以及贯通孔110的侧壁。设置为任意结构的第2金属膜108也可以被配置为覆盖基板102的上表面和下表面以及贯通孔110的侧壁。在贯通孔110的整体未被第1金属膜104或者第2金属膜108堵塞的情况下,也可以形成填充材料112以便填埋贯通孔110。作为填充材料112,可举出环氧树脂、丙烯酸树脂、聚酰亚胺、聚酰胺、聚酯等有机化合物。有机化合物中可以混合氧化硅等无机材料。或者,如图6的(B)所示,也可以设置第2金属膜108或者第1金属膜104、以便堵塞贯通孔110。如后所述,第1金属膜104或者第1金属膜104和第2金属膜108的层叠能够作为用于将搭载于基板102的各种元件、半导体装置电连接的贯通布线而发挥功能。
在具有上述结构的布线基板100中,如在实施例中通过实验证明的那样,由于扩散层106的存在而在基板102与第1金属膜104之间得到较大的粘接力。此外,由于在扩散层106中实质上不存在第1元素的氧化物单独存在的区域,因此与具有实质上仅由第1元素的氧化物构成的区域的膜相比,扩散层106具有高的蚀刻耐性。因此,扩散层106表示与第1金属膜104相同程度的蚀刻速度,在第1金属膜104的蚀刻时,难以产生位于第1金属膜104之下的扩散层106的蚀刻(侧蚀刻)。特别是在扩散层106具有第1元素、第1金属元素以及第2金属元素共存的区域的情况下,中间层不单独存在,因此能够防止这样的侧蚀刻,表现出高的粘接力。其结果,能够有效地抑制第1金属膜104从基板102剥离的现象,能够提供可靠性高的布线基板以及包括该布线基板的半导体装置。
(第2实施方式)
在本实施方式中,对第1实施方式中所述的布线基板100的制造方法进行叙述。对于与第1实施方式中所述的结构相同或者类似的结构,有时省略说明。
首先,在基板102-1上形成作为扩散层106的前体的第1中间层120(图7,S1)。第1中间层120包含第1元素的氧化物,通过溅射法、电子束蒸镀、真空蒸镀等物理气相生长(PVP)法、或者溶胶-凝胶法。在使用溶胶-凝胶法的情况下,使用四乙基锌、四乙氧基钛、四乙氧基锆等金属醇盐作为原料,通过旋涂法、浸渍涂布法、印刷法等将含有该金属醇盐的溶液或混合液涂布在基板102-1上,然后,通过水解金属醇盐而形成第1中间层120。第1中间层120的厚度为5nm以上即可,设为20nm或者15nm以下即可。第1中间层120的厚度可以为5nm以上且20nm以下、或者5nm以上且15nm以下。
中间层的厚度能够通过薄膜分析曲线法进行测定。具体地说,首先,使用具有已知的厚度且包含中间层120所含的金属的金属薄膜作为标准样本,对向其照射X射线而得到的荧光X射线强度进行测定。使用多个厚度不同的样本,制作表示厚度与荧光X射线强度的关系的分析曲线。接下来,对形成在基板102上的中间层120进行同样的测定,使用分析曲线从得到的荧光X射线强度估计厚度。在该测定中,也能够在中间层120的多个区域进行测定,采用通过对在各个区域得到的厚度进行平均而得到的值作为中间层120的厚度。作为多个区域,例如能够选择基板102的四角和中央的五个区域。
作为测定装置的一例,可列举出搭载有半导体检测器和比例这两者作为检测器,搭载有直径为0.1mm的准直器的Seiko-Instruments制荧光X射线分析装置SFT9450。使用本装置,在管电流1500μA、测定时间30秒的条件下,根据上述方法测定中间层120的厚度。
然后,对基板102-1以及形成于其上的第1中间层120进行加热处理,使基板102-1所包括的第1元素向第1中间层120扩散。加热处理例如以从100℃以上、200℃以上、250℃以上或者350℃以上、700℃以下、600℃以下或者550℃以下的温度范围设定的温度进行即可。该温度范围可以为100℃以上且700℃以下、200℃以上且700℃以下、250℃以上且600℃以下、或者350℃以上且550℃以下。虽然也依赖于加热温度,但加热时间例如可以为10分钟以上、15分钟以上、或者30分钟以上,可以为5小时以下、或者2小时以下。典型的加热时间为1小时。加热时间可以为10分以上且5小时以下、15分钟以上且5小时以下、或者30分钟以上且2小时以下。在以高于基板102的耐热温度(玻璃化转变温度、或者熔点)的温度进行加热的情况下,优选在1秒至30秒左右的短时间内进行加热处理。通过该加热处理,第1中间层120被变换为包含第1金属元素和第1元素的第2中间层122(图7,S2)。第1金属元素的至少一部分作为氧化物存在。基板102-1与第1中间层120分别通过相互扩散而被变换为基板102-2和第2中间层122。
接下来,在第2中间层122上形成金属膜104-1。第2中间层122例如可以通过非电解镀覆法、溅射法、包括有机金属气相生长(MOCVD)法的化学气相沉积(CVD)法、真空蒸镀、电子束蒸镀等PVD法等形成即可。此时的温度为室温(20℃以上且25℃以下)或者室温以上,能够在100℃以下或者50℃以下的温度进行(图7,S3)。形成金属膜104-1时的温度可以为室温以上且100℃以下,或者也可以为室温以上且50℃以下。
然后,再次进行加热处理,使金属膜104-1所包含的第1金属向第2中间层122扩散。加热处理的温度、时间能够从上述的范围中适当选择。此时,基板102所包含的第1元素还可以进一步向第2中间层122扩散。通过该加热处理,第2中间层122被变换为具有第1实施方式中所描述的浓度分布的扩散层106(图7,S4)。此外,将与第2中间层122进行了相互扩散后的金属膜104-1设为第1金属膜104。虽未图示,但也可以在第1金属膜104上形成第2金属膜108。第2金属膜108能够通过溅射法、CVD法、PVD法等形成。或者,也可以使用第1金属膜104作为晶种层,通过向第1金属膜104供电来形成第2金属膜108。
在制造具有贯通孔110的布线基板100的情况下,首先,在基板102设置贯通孔110(图8,S10)。贯通孔110只要通过等离子体蚀刻、湿式蚀刻等蚀刻、激光照射或者喷砂、超声波钻等机械加工来形成即可。根据需要,可以在形成贯通孔110后,以氟酸处理基板102,进行基板102的上表面、下表面、贯通孔110的侧壁的平坦化。
在形成贯通孔110后,形成第1中间层120,以使覆盖基板102的上表面、下表面以及贯通孔110的侧壁(图8,S11)。然后,通过上述的加热处理将第1中间层120变换为第2中间层122(图8,S12),在第2中间层122上形成金属膜104-1(图8,S13)。然后,进行上述的加热处理并将第2中间层122向扩散层106变换(图9,S14)。
然后,在基板102的上表面和下表面的一部分形成第2金属膜108。例如,如图9的S15所示,将抗蚀剂掩模124设置在第1金属膜104上,以便覆盖不设置第2金属膜108的区域。抗蚀剂掩模124也可以通过涂敷液体的抗蚀剂并使其固化而形成,但由于基板102具有贯通孔110,因此通过将膜状的抗蚀剂粘贴于基板102的上表面和下表面,然后进行曝光和显影,能够高效地形成抗蚀剂掩模124。
然后,对第1金属膜104进行供电而进行电镀。由此,在从抗蚀剂掩模124露出的第1金属膜104上形成有第2金属膜108(图9,S16)。然后,除去抗蚀剂掩模124(图10,S17),通过蚀刻除去从第2金属膜108露出的第1金属膜104和扩散层106(图10,S18)。蚀刻能够使用包含硫酸等酸的蚀刻剂进行。通过以上的工艺,能够制造具有贯通孔110的布线基板100。虽然省略了详细的说明,但贯通孔110也可以在形成了第1金属膜104后、或者在形成了第2金属膜108后形成。
如上所述,本公开的扩散层106表现与第1金属膜104相同程度的蚀刻速度,因此即使在第1金属膜104的蚀刻过程(S18)中也不会引起扩散层106的侧蚀刻,或者非常慢。因此,能够经由扩散层106在第1金属膜104与基板102之间提供足够的接触面积。其结果,能够有效地防止第1金属膜104、第2金属膜108的剥离。
(第3实施方式)
在本实施方式中,对利用了第1、第2实施方式所述的布线基板100的半导体装置进行说明。在此,将利用了在图10的步骤S18中得到的布线基板100的半导体装置作为代表例进行说明。
图11所示的半导体装置130具有主基板132和层叠于其上的多个布线基板100(布线基板100-1、100-2、100-3)。对布线基板100的数量没有限制,根据半导体装置130所要求的性能来决定。在主基板132上连接有各种半导体芯片(存储器装置、中央运算单元)、半导体元件(微机电系统(MEMS)等)。图11表示将中央运算单元133设置到主基板132的例子。如第1实施方式所述,布线基板100作为贯通布线发挥功能,具有设置于基板102的上表面和下表面的第2金属膜108和第1金属膜104(以下,将它们合起来记为连接布线134),连接布线134有助于半导体装置130中的上下方向的电连接。最下层的布线基板100-1的连接布线134通过配置在层间绝缘层142、142之间的通孔或者布线并经由凸块136-1而与设置于主基板132上的端子138电连接。设置于布线基板100-1的上部的连接布线134通过设置在层间绝缘层139、140间的通孔或者布线并经由凸块136-2而与布线基板100-2电连接。同样地,布线基板100-2与布线基板100-3也经由凸块136-3电连接。凸块136包含铟、铜、金等金属、或者焊料等合金。
如图12所示的半导体装置150那样,层叠的布线基板100的尺寸、形状也可以彼此不同,在主基板132上层叠的布线基板100的数量也可以不同。在图12所示的例子中,在一部分区域层叠有两个布线基板100-4、100-5,在一部分区域层叠有三个布线基板100-1、100-2、100-3。
图13所示的半导体装置160具有多个半导体芯片162-1、162-2经由布线基板100层叠在主基板132上的构造。在半导体芯片162-1、162-2分别形成有端子164、166,这些端子经由凸块168而与布线基板100-1的连接布线134电连接。作为半导体芯片的例子,可举出作为半导体芯片162-1的例子的驱动芯片、作为半导体芯片162-2的例子的存储器芯片等。由此,半导体芯片162-1、162-2相互电连接。此外,也可以通过导线布线170将半导体芯片162-2与主基板132电连接。在图11至图13中,示出了连接布线134直接与凸块136、168连接,但也可以在凸块136、168与连接布线134之间设置有引线布线等其他布线。
[实施例]
1.实施例1
在本实施例中,叙述对根据第2实施方式中所述的制造方法制作出的布线基板100中包含的元素进行分析后的结果。
布线基板100的构造如图1的(A)所示,具体的制作方法如下所述。通过溶胶-凝胶法在玻璃基板(30cm×40cm、厚度0.5mm、表面粗糙度5nm)上形成包含氧化锌的膜,由此形成第1中间层120(厚度15nm)。然后,在550℃下加热1小时,将第1中间层120变换为第2中间层122。接下俩,应用无电解镀覆法将铜的膜(厚度0.5μm)作为第1金属膜104形成在第2中间层122上。然后,再次在450℃下进行1小时加热,将第2中间层122变换为扩散层106。
另外,作为比较例,也制作了使用表面粗糙度为5nm、200nm以及1μm(1000nm)这三个基板,不形成第1中间层120而在基板上直接形成第1金属膜104的试样。这些试样分别相当于后述的表1的试样8至10,是不具有扩散层106的试样。
元素分析是通过使用FIB对进行了加热后的布线基板100进行加工而使截面露出,扫描各层间的界面地从基板102侧通过EDX进行元素分析。将得到的特性X射线强度变换为原子组成分率,评价深度方向的元素分布。作为测定装置,使用搭载有元素分析装置的透射型电子显微镜(日立高新技术制,型号:HD-2700),在加速电压200kV下对布线基板100照射光束直径约0.2nm的电子束,使用Si漂移检测器检测所产生的特性X射线。作为元素分析装置,使用堀场制作所制造的EMAX Evolution。能量分辨率为约130eV,X射线取出角为24.8°,立体角为2.2sr。取入点数设为100分,各取入时间设为1秒。
EDX分析结果示于图14。在图14中,示出了锌、硅以及铜相对于布线基板100的深度的浓度变化。如图14所示,在深度为0nm至35nm的区域和比50nm深的区域实质上无法检测锌。因此,可知基板102与扩散层106的界面103以及扩散层106与第1金属膜104的界面105分别位于35nm、50nm的深度。确认了扩散层106中包含的锌的浓度的曲线在扩散层106中示出一个峰值。
由图14可知,基板102所包含的作为第1元素的硅随着从界面103接近第1金属膜104而其浓度减少。同样地,可理解第1金属膜104所包含的铜的浓度也随着从界面105接近基板102而减少。根据以上确认,在扩散层106中包含作为第1金属元素的锌、并且包含作为第1元素的硅和作为第2金属元素的铜。此外,在扩散层106中,硅和铜相对于深度的浓度曲线相互交叉。由此可知,在扩散层106中,在任一区域中,除了第1金属元素以外,至少包含第1元素和第2金属元素中的一者。
2.实施例2
在本实施例中,表示对扩散层106对基板102与第1金属膜104之间的粘接力的效果进行评价后的结果。
对实施例1中制作出的布线基板100的第1金属膜104进行供电,利用电解镀覆法将铜的膜(厚度3μm)形成为第2金属膜108。在本实施例中,使第1中间层120的厚度为15nm,使形成第2金属膜108后的加热温度变化,评价了扩散层106的效果。此外,将试样8至10、即未设置扩散层106的布线基板也作为比较例进行了评价。
扩散层106针对第1金属膜104与基板102之间的粘接性的效果通过带剥离试验以及蚀刻试验进行了评价。前者是在将聚酰亚胺为基材的粘接胶带(日东电工公司制,型号:耐热绝缘用聚酰亚胺粘着胶带No.360UL)贴附于第2金属膜108后将粘着胶带剥离,通过目视观察粘着胶带而进行了评价。后者通过对布线基板100进行蚀刻,在蚀刻中目视确认有无第1金属膜104、第2金属膜108的剥离来进行。蚀刻使用1%过硫酸铵作为蚀刻剂,在23℃、1min的条件下进行。
将结果示于表1。如表1所示,可知在使用具有本公开所示的构造的扩散层106的情况下,如果第2金属膜108形成后的加热温度为250℃以上(试样编号3至7),则在带剥离试验中未观测到剥离,第1金属膜104以及第2金属膜108残存于基板102上。此外,如果加热温度为350℃以上(试样编号4至7),则在带剥离试验和蚀刻试验中均未观测到剥离。另一方面,在不使用扩散层106的比较例(试样编号8)、即在基板102上不形成第1中间层120的情况下,即使第2金属膜108形成后的加热温度为450℃,在带剥离试验中也观察到剥离。明确表示:在不设置本公开的扩散层106的情况下,第1金属膜104与基板102的粘接性小,第1金属膜104、第2金属膜108容易基板102剥离,与此相对,通过设置本公开的扩散层106,能够以牢固的粘接力在基板102上形成金属布线。
在此,如果基板的表面粗糙度增大则表现出锚定效应,因此通常与形成于其上的金属膜的密接性提高。然而,即使基板102的表面粗糙度为200nm,在带剥离试验中也观察到剥离(试样9),在不设置扩散层106的情况下,根据试样10的结果确认了需要表面粗糙度1000nm的粗糙的表面。然而,在设置1000nm厚的扩散层106的情况下,如上述那样难以进行微细加工,例如在形成线-空间(L/S)为10μm/10μm的布线时变得明显不利。因此,通过使用本公开的扩散层106,能够在具有不期待锚定效应的程度的表面粗糙度的基板、即表面的平坦性极高的基板上形成实施了微细加工的布线。这有助于例如要求布线高的平坦性的高频电路基板等布线基板的制造。
[表1]
表1基于带剥离试验和蚀刻试验的扩散层106的效果的评价
a不包括扩散层106的比较例
b第2金属膜108形成后的加热温度
c×:观察到剥离。 ○:没有观察到剥离。
作为本公开的实施方式,上述的各实施方式只要不相互矛盾,就能够适当组合来实施。此外,基于各实施方式,本领域技术人员适当进行了结构要素的追加、删除或者设计变更,只要具备本公开的主旨,都包括在本公开的范围内。
此外,即使是与由上述各实施方式带来的作用效果不同的其他作用效果,根据本说明书的记载可知的效果、或者本领域技术人员能够容易地预测的效果当然也由本公开带来。
-符号说明-
100:布线基板,100-1:布线基板,100-2:布线基板,100-3:布线基板,100-4:布线基板,100-5:布线基板,102:基板,102-1:基板,102-2:基板,102a:第1元素的浓度,103:界面,104:第1金属膜,104-1:金属膜,104a:第2金属元素的浓度,105:界面,106:扩散层,106a:第1金属元素的浓度,106b:区域,106c:区域,108:第2金属膜,110:贯通孔,112:填充材料,120:第1中间层,122:第2中间层,124:抗蚀剂掩模,130:半导体装置,132:主基板,133:中央运算单元,134:连接布线,136:凸块,136-1:凸块,136-2:凸块,136-3:凸块,138:端子,140:层间绝缘层,141:层间绝缘层,150:半导体装置,160:半导体装置,162-1:半导体芯片,162-2:半导体芯片,164:端子,166:端子,168:凸块,170:导线布线。
Claims (23)
1.一种布线基板,具有:
基板,包含第1元素;
扩散层,与所述基板相接,包含第1金属元素;以及
第1金属膜,与所述扩散层相接,包含第2金属元素,
所述扩散层具有至少包含所述第1元素和所述第1金属元素的区域、及包含所述第1金属元素和所述第2金属元素的区域。
2.根据权利要求1所述的布线基板,其中,
所述扩散层中的所述第2金属元素的浓度在厚度方向上随着接近所述基板而减少,
所述扩散层中的所述第1元素的浓度在所述厚度方向上随着接近所述第1金属膜而减少。
3.根据权利要求2所述的布线基板,其中,
在所述扩散层中,存在所述第2金属元素的浓度相对于所述扩散层的厚度的曲线与所述第1元素的浓度相对于所述厚度的曲线交叉的区域。
4.根据权利要求1所述的布线基板,其中,
所述扩散层包括所述第1元素、所述第1金属元素以及所述第2金属元素共存的区域。
5.根据权利要求4所述的布线基板,其中,
所述第1元素、所述第1金属元素以及所述第2金属元素共存的所述区域的厚度为1nm以上且1μm以下。
6.根据权利要求1所述的布线基板,其中,
所述第1元素是硅,
所述第2金属元素从铜、钛、铬、镍以及金中选择。
7.根据权利要求6所述的布线基板,其中,
所述第1金属元素从锌、钛、锆、铝以及锡中选择。
8.根据权利要求7所述的布线基板,其中,
所述第1金属元素在所述扩散层中作为氧化物存在。
9.根据权利要求1所述的布线基板,其中,
所述第1金属膜包含所述第1元素。
10.根据权利要求1所述的布线基板,其中,
所述基板包含所述第2金属元素。
11.根据权利要求1所述的布线基板,其中,
所述基板从玻璃基板、石英基板、半导体基板以及陶瓷基板中选择。
12.根据权利要求1所述的布线基板,其中,
所述布线基板还具有:位于所述第1金属膜上且与所述第1金属膜相接的第2金属膜。
13.一种制造布线基板的方法,包括:
在包含第1元素的基板上形成包含第1金属元素的氧化物的第1中间层;
通过将所述第1元素向所述第1中间层扩散,从而将所述第1中间层变换为第2中间层;
在所述第2中间层之上形成包含第2金属元素的第1金属膜;以及
通过将所述第2金属元素向所述第2中间层扩散,从而将所述第2中间层变换为扩散层。
14.根据权利要求13所述的方法,其中,
所述第1中间层的形成通过溅射法、溶胶-凝胶法或者物理气相生长法来进行。
15.根据权利要求13所述的方法,其中,
所述第1金属膜的形成通过溅射法、化学气相生长法、物理气相生长法或者非电解镀覆法来进行。
16.根据权利要求13所述的方法,其中,
所述方法还包括:在所述第1金属膜上通过电解镀覆法形成第2金属膜。
17.根据权利要求13所述的方法,其中,
所述方法包括:
在形成所述第1中间层前在基板形成贯通孔,
所述第1中间层形成为覆盖所述贯通孔的侧壁。
18.根据权利要求13所述的方法,其中,
所述第1元素的扩散以及所述第2金属元素的扩散通过对基板进行加热来进行。
19.根据权利要求13所述的方法,其中,
所述第1中间层的厚度为1nm以上且1μm以下。
20.根据权利要求13所述的方法,其中,
所述第1元素是硅,
所述第2金属元素从铜、钛、铬、镍以及金中选择。
21.根据权利要求20所述的方法,其中,
所述第1金属元素从锌、钛、锆、铝以及锡中选择。
22.根据权利要求21所述的方法,其中,
所述第1金属元素在所述扩散层中作为氧化物而存在。
23.根据权利要求13所述的方法,其中,
所述基板从玻璃基板、石英基板、半导体基板以及陶瓷基板中选择。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4713494A (en) * | 1985-04-12 | 1987-12-15 | Hitachi, Ltd. | Multilayer ceramic circuit board |
JPH08293654A (ja) * | 1995-04-21 | 1996-11-05 | World Metal:Kk | セラミックへの金属被膜形成方法及び金属被覆セラミック構造体 |
JP2008282887A (ja) * | 2007-05-09 | 2008-11-20 | Tohoku Univ | 液晶表示装置及びその製造方法 |
US20100065322A1 (en) * | 2008-09-12 | 2010-03-18 | Shinko Electric Industries Co., Ltd. | Wiring board and method of manufacturing the same |
WO2014084077A1 (ja) * | 2012-11-28 | 2014-06-05 | ニッコー株式会社 | 銅メタライズ配線セラミック基板及びその製造方法 |
CN107112297A (zh) * | 2014-11-14 | 2017-08-29 | 凸版印刷株式会社 | 配线电路基板、半导体装置、配线电路基板的制造方法、半导体装置的制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798136A (en) * | 1972-06-09 | 1974-03-19 | Ibm | Method for completely filling small diameter through-holes with large length to diameter ratio |
JPS63118058A (ja) * | 1986-11-05 | 1988-05-23 | Toyota Motor Corp | セラミツク溶射部材およびその製造方法 |
US7026059B2 (en) * | 2000-09-22 | 2006-04-11 | Circuit Foil Japan Co., Ltd. | Copper foil for high-density ultrafine printed wiring boad |
JP2003107523A (ja) * | 2001-09-28 | 2003-04-09 | Hitachi Ltd | 液晶表示装置 |
JP4401912B2 (ja) * | 2003-10-17 | 2010-01-20 | 学校法人早稲田大学 | 半導体多層配線板の形成方法 |
JP2005158887A (ja) * | 2003-11-21 | 2005-06-16 | Dept Corp | 回路基板及びその製造方法 |
JP2006032851A (ja) * | 2004-07-21 | 2006-02-02 | Mitsui Mining & Smelting Co Ltd | 被覆銅、ホイスカの発生抑制方法、プリント配線基板および半導体装置 |
JP4564342B2 (ja) * | 2004-11-24 | 2010-10-20 | 大日本印刷株式会社 | 多層配線基板およびその製造方法 |
JP4355743B2 (ja) | 2006-12-04 | 2009-11-04 | 株式会社神戸製鋼所 | Cu合金配線膜とそのCu合金配線膜を用いたフラットパネルディスプレイ用TFT素子、及びそのCu合金配線膜を作製するためのCu合金スパッタリングターゲット |
JP2009283739A (ja) * | 2008-05-23 | 2009-12-03 | Shinko Electric Ind Co Ltd | 配線基板および配線基板の製造方法 |
JP2011222567A (ja) * | 2010-04-02 | 2011-11-04 | Kobe Steel Ltd | 配線構造、表示装置、および半導体装置 |
JP2012027159A (ja) | 2010-07-21 | 2012-02-09 | Kobe Steel Ltd | 表示装置 |
TW201251542A (en) * | 2011-05-24 | 2012-12-16 | Fujifilm Corp | Printed wiring board, and method for selecting printed wiring board |
KR101321305B1 (ko) * | 2011-11-25 | 2013-10-28 | 삼성전기주식회사 | 빌드업 인쇄회로기판 및 그의 제조방법 |
JP2013125655A (ja) | 2011-12-14 | 2013-06-24 | Hitachi Chemical Co Ltd | 導電性接着材、導電性積層体、導電性積層体の製造方法、配線基板、表示装置及び太陽電池モジュール |
JP2015038925A (ja) * | 2013-08-19 | 2015-02-26 | 株式会社東芝 | 半導体装置 |
KR20160062066A (ko) | 2013-09-26 | 2016-06-01 | 아토테크더치랜드게엠베하 | 기판 표면들의 금속화를 위한 신규한 접착 촉진제들 |
JP6478982B2 (ja) | 2013-09-26 | 2019-03-06 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 基材表面を金属化するための新規の密着性促進方法 |
US10332968B2 (en) | 2015-06-29 | 2019-06-25 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JP6717238B2 (ja) * | 2017-03-07 | 2020-07-01 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板 |
DE112018006975B4 (de) * | 2018-01-30 | 2022-06-23 | Fujifilm Corporation | Optischer Dünnfilm, optisches Element und optisches System |
-
2019
- 2019-03-22 CN CN202311150946.1A patent/CN117320265A/zh active Pending
- 2019-03-22 JP JP2020509993A patent/JP7468342B2/ja active Active
- 2019-03-22 CN CN201980020134.0A patent/CN111868301A/zh active Pending
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-
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-
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- 2023-10-19 US US18/381,789 patent/US20240049384A1/en active Pending
-
2024
- 2024-01-23 JP JP2024008072A patent/JP2024042010A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4713494A (en) * | 1985-04-12 | 1987-12-15 | Hitachi, Ltd. | Multilayer ceramic circuit board |
JPH08293654A (ja) * | 1995-04-21 | 1996-11-05 | World Metal:Kk | セラミックへの金属被膜形成方法及び金属被覆セラミック構造体 |
JP2008282887A (ja) * | 2007-05-09 | 2008-11-20 | Tohoku Univ | 液晶表示装置及びその製造方法 |
US20100065322A1 (en) * | 2008-09-12 | 2010-03-18 | Shinko Electric Industries Co., Ltd. | Wiring board and method of manufacturing the same |
WO2014084077A1 (ja) * | 2012-11-28 | 2014-06-05 | ニッコー株式会社 | 銅メタライズ配線セラミック基板及びその製造方法 |
CN107112297A (zh) * | 2014-11-14 | 2017-08-29 | 凸版印刷株式会社 | 配线电路基板、半导体装置、配线电路基板的制造方法、半导体装置的制造方法 |
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