TWI807084B - 被加工物的加工方法 - Google Patents

被加工物的加工方法 Download PDF

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Publication number
TWI807084B
TWI807084B TW108128709A TW108128709A TWI807084B TW I807084 B TWI807084 B TW I807084B TW 108128709 A TW108128709 A TW 108128709A TW 108128709 A TW108128709 A TW 108128709A TW I807084 B TWI807084 B TW I807084B
Authority
TW
Taiwan
Prior art keywords
resin
workpiece
wafer
holding
resin layer
Prior art date
Application number
TW108128709A
Other languages
English (en)
Chinese (zh)
Other versions
TW202009997A (zh
Inventor
小松淳
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202009997A publication Critical patent/TW202009997A/zh
Application granted granted Critical
Publication of TWI807084B publication Critical patent/TWI807084B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Threshing Machine Elements (AREA)
TW108128709A 2018-08-14 2019-08-13 被加工物的加工方法 TWI807084B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-152658 2018-08-14
JP2018152658A JP7115932B2 (ja) 2018-08-14 2018-08-14 被加工物の加工方法

Publications (2)

Publication Number Publication Date
TW202009997A TW202009997A (zh) 2020-03-01
TWI807084B true TWI807084B (zh) 2023-07-01

Family

ID=69547658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108128709A TWI807084B (zh) 2018-08-14 2019-08-13 被加工物的加工方法

Country Status (4)

Country Link
JP (1) JP7115932B2 (ja)
KR (1) KR102638139B1 (ja)
CN (1) CN110828306B (ja)
TW (1) TWI807084B (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0887779A (ja) * 1994-09-16 1996-04-02 Nkk Corp 光記録媒体のコーティング方法およびコーティング装置
US20070267724A1 (en) * 2006-05-16 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having stress tuning layer and methods of manufacturing same
JP2009054965A (ja) * 2007-08-29 2009-03-12 Renesas Technology Corp 半導体装置の製造方法
TW201320175A (zh) * 2011-10-11 2013-05-16 Disco Corp 晶圓之研磨方法
TW201704181A (zh) * 2015-03-10 2017-02-01 Nippon Electric Glass Co 半導體用支撐玻璃基板及用其的積層板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4598577B2 (ja) * 2005-03-28 2010-12-15 芝浦メカトロニクス株式会社 樹脂層硬化装置及び樹脂層硬化方法
KR100952286B1 (ko) 2007-10-30 2010-04-12 주식회사 엘지화학 광학필름, 위상차 필름 및 이를 포함하는 액정표시장치
JP2009094335A (ja) * 2007-10-10 2009-04-30 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP2010251978A (ja) 2009-04-14 2010-11-04 Shin-Etsu Chemical Co Ltd 複合化された圧電基板の製造方法および複合化された圧電基板
JP2011155112A (ja) * 2010-01-27 2011-08-11 Disco Abrasive Syst Ltd ウェーハの加工方法
CN103270070B (zh) * 2011-01-18 2015-02-18 旭化成电子材料株式会社 树脂组合物、固化物、树脂膜和配线板
JP6621338B2 (ja) * 2016-02-09 2019-12-18 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0887779A (ja) * 1994-09-16 1996-04-02 Nkk Corp 光記録媒体のコーティング方法およびコーティング装置
US20070267724A1 (en) * 2006-05-16 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having stress tuning layer and methods of manufacturing same
JP2009054965A (ja) * 2007-08-29 2009-03-12 Renesas Technology Corp 半導体装置の製造方法
TW201320175A (zh) * 2011-10-11 2013-05-16 Disco Corp 晶圓之研磨方法
TW201704181A (zh) * 2015-03-10 2017-02-01 Nippon Electric Glass Co 半導體用支撐玻璃基板及用其的積層板

Also Published As

Publication number Publication date
KR20200019582A (ko) 2020-02-24
JP2020027898A (ja) 2020-02-20
JP7115932B2 (ja) 2022-08-09
CN110828306A (zh) 2020-02-21
KR102638139B1 (ko) 2024-02-16
TW202009997A (zh) 2020-03-01
CN110828306B (zh) 2024-02-20

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