TWI801685B - 形成方法、系統、光刻裝置、物品之製造方法及程式 - Google Patents

形成方法、系統、光刻裝置、物品之製造方法及程式 Download PDF

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Publication number
TWI801685B
TWI801685B TW108138773A TW108138773A TWI801685B TW I801685 B TWI801685 B TW I801685B TW 108138773 A TW108138773 A TW 108138773A TW 108138773 A TW108138773 A TW 108138773A TW I801685 B TWI801685 B TW I801685B
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TW
Taiwan
Prior art keywords
pattern
aforementioned
substrate
latent image
forming
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TW108138773A
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English (en)
Chinese (zh)
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TW202036181A (zh
Inventor
本間英晃
張劬
木島渉
根谷尚稔
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日商佳能股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
TW108138773A 2018-12-06 2019-10-28 形成方法、系統、光刻裝置、物品之製造方法及程式 TWI801685B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018229213A JP6861693B2 (ja) 2018-12-06 2018-12-06 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム
JP2018-229213 2018-12-06

Publications (2)

Publication Number Publication Date
TW202036181A TW202036181A (zh) 2020-10-01
TWI801685B true TWI801685B (zh) 2023-05-11

Family

ID=71012792

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Application Number Title Priority Date Filing Date
TW108138773A TWI801685B (zh) 2018-12-06 2019-10-28 形成方法、系統、光刻裝置、物品之製造方法及程式

Country Status (4)

Country Link
JP (1) JP6861693B2 (enrdf_load_stackoverflow)
KR (2) KR102658787B1 (enrdf_load_stackoverflow)
CN (1) CN111290223B (enrdf_load_stackoverflow)
TW (1) TWI801685B (enrdf_load_stackoverflow)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7516143B2 (ja) * 2020-07-20 2024-07-16 キヤノン株式会社 リソグラフィ装置、マーク形成方法、及びパターン形成方法
JP7659388B2 (ja) 2020-12-08 2025-04-09 キヤノン株式会社 検出装置、検出方法、露光装置、露光システム、物品製造方法、およびプログラム
CN115097664A (zh) * 2022-07-11 2022-09-23 河南省华锐光电产业有限公司 基板贴合的方法和装置

Citations (6)

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JP2006032956A (ja) * 2004-07-13 2006-02-02 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
CN102692830A (zh) * 2011-03-24 2012-09-26 南亚科技股份有限公司 对位误差的评估方法及其掩模
CN104281002A (zh) * 2013-07-02 2015-01-14 佳能株式会社 图案形成方法、光刻装置、光刻系统及物品制造方法
US9454084B2 (en) * 2012-05-29 2016-09-27 Asml Netherlands B.V. Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system
TW201743137A (zh) * 2016-06-01 2017-12-16 Canon Kk 決定方法、形成方法、物品之製造方法及記憶媒體

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JPH04287908A (ja) * 1990-10-03 1992-10-13 Fujitsu Ltd 露光装置および露光方法
US5473435A (en) * 1992-07-07 1995-12-05 Nikon Corporation Method of measuring the bent shape of a movable mirror of an exposure apparatus
JP3336649B2 (ja) * 1992-12-25 2002-10-21 株式会社ニコン 露光装置、露光方法、及びその露光方法を含むデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JP3229118B2 (ja) * 1993-04-26 2001-11-12 三菱電機株式会社 積層型半導体装置のパターン形成方法
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
JP2000284492A (ja) * 1999-03-30 2000-10-13 Seiko Epson Corp 露光装置、露光方法及びプログラムを記録した記憶媒体
JP2001033860A (ja) * 1999-07-26 2001-02-09 Nidec Copal Corp カメラのフィルム移動量検出装置
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
US6894762B1 (en) * 2002-09-17 2005-05-17 Lsi Logic Corporation Dual source lithography for direct write application
JP2005092137A (ja) * 2003-09-19 2005-04-07 Nikon Corp 露光装置及び露光方法
JP2009200105A (ja) * 2008-02-19 2009-09-03 Canon Inc 露光装置
JP6360287B2 (ja) * 2013-08-13 2018-07-18 キヤノン株式会社 リソグラフィ装置、位置合わせ方法、および物品の製造方法
WO2017108453A1 (en) * 2015-12-24 2017-06-29 Asml Netherlands B.V. Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032956A (ja) * 2004-07-13 2006-02-02 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
CN102692830A (zh) * 2011-03-24 2012-09-26 南亚科技股份有限公司 对位误差的评估方法及其掩模
US9454084B2 (en) * 2012-05-29 2016-09-27 Asml Netherlands B.V. Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system
CN104281002A (zh) * 2013-07-02 2015-01-14 佳能株式会社 图案形成方法、光刻装置、光刻系统及物品制造方法
TW201743137A (zh) * 2016-06-01 2017-12-16 Canon Kk 決定方法、形成方法、物品之製造方法及記憶媒體

Also Published As

Publication number Publication date
KR20200069227A (ko) 2020-06-16
CN111290223B (zh) 2023-08-15
TW202036181A (zh) 2020-10-01
CN111290223A (zh) 2020-06-16
KR102789001B1 (ko) 2025-04-01
JP6861693B2 (ja) 2021-04-21
KR102658787B1 (ko) 2024-04-19
KR20240054936A (ko) 2024-04-26
JP2020091429A (ja) 2020-06-11

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