JP6861693B2 - 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム - Google Patents

形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム Download PDF

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JP6861693B2
JP6861693B2 JP2018229213A JP2018229213A JP6861693B2 JP 6861693 B2 JP6861693 B2 JP 6861693B2 JP 2018229213 A JP2018229213 A JP 2018229213A JP 2018229213 A JP2018229213 A JP 2018229213A JP 6861693 B2 JP6861693 B2 JP 6861693B2
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Japan
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pattern
substrate
mark
forming
latent image
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Japanese (ja)
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JP2020091429A (ja
JP2020091429A5 (enrdf_load_stackoverflow
Inventor
英晃 本間
英晃 本間
劬 張
劬 張
渉 木島
渉 木島
尚稔 根谷
尚稔 根谷
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Canon Inc
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Canon Inc
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Priority to JP2018229213A priority Critical patent/JP6861693B2/ja
Priority to TW108138773A priority patent/TWI801685B/zh
Priority to KR1020190153937A priority patent/KR102658787B1/ko
Priority to CN201911232783.5A priority patent/CN111290223B/zh
Publication of JP2020091429A publication Critical patent/JP2020091429A/ja
Publication of JP2020091429A5 publication Critical patent/JP2020091429A5/ja
Application granted granted Critical
Publication of JP6861693B2 publication Critical patent/JP6861693B2/ja
Priority to KR1020240048717A priority patent/KR102789001B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018229213A 2018-12-06 2018-12-06 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム Active JP6861693B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018229213A JP6861693B2 (ja) 2018-12-06 2018-12-06 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム
TW108138773A TWI801685B (zh) 2018-12-06 2019-10-28 形成方法、系統、光刻裝置、物品之製造方法及程式
KR1020190153937A KR102658787B1 (ko) 2018-12-06 2019-11-27 형성 방법, 시스템, 리소그래피 장치, 물품 제조 방법, 및 프로그램
CN201911232783.5A CN111290223B (zh) 2018-12-06 2019-12-05 成型方法、系统、光刻装置、物品的制造方法及存储介质
KR1020240048717A KR102789001B1 (ko) 2018-12-06 2024-04-11 형성 방법, 시스템, 리소그래피 장치, 물품 제조 방법, 및 프로그램

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018229213A JP6861693B2 (ja) 2018-12-06 2018-12-06 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021017736A Division JP7089607B2 (ja) 2021-02-05 2021-02-05 リソグラフィ装置

Publications (3)

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JP2020091429A JP2020091429A (ja) 2020-06-11
JP2020091429A5 JP2020091429A5 (enrdf_load_stackoverflow) 2020-08-20
JP6861693B2 true JP6861693B2 (ja) 2021-04-21

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JP2018229213A Active JP6861693B2 (ja) 2018-12-06 2018-12-06 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム

Country Status (4)

Country Link
JP (1) JP6861693B2 (enrdf_load_stackoverflow)
KR (2) KR102658787B1 (enrdf_load_stackoverflow)
CN (1) CN111290223B (enrdf_load_stackoverflow)
TW (1) TWI801685B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7516143B2 (ja) 2020-07-20 2024-07-16 キヤノン株式会社 リソグラフィ装置、マーク形成方法、及びパターン形成方法
JP7659388B2 (ja) 2020-12-08 2025-04-09 キヤノン株式会社 検出装置、検出方法、露光装置、露光システム、物品製造方法、およびプログラム
CN115097664A (zh) * 2022-07-11 2022-09-23 河南省华锐光电产业有限公司 基板贴合的方法和装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04287908A (ja) * 1990-10-03 1992-10-13 Fujitsu Ltd 露光装置および露光方法
US5473435A (en) * 1992-07-07 1995-12-05 Nikon Corporation Method of measuring the bent shape of a movable mirror of an exposure apparatus
JP3336649B2 (ja) * 1992-12-25 2002-10-21 株式会社ニコン 露光装置、露光方法、及びその露光方法を含むデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JP3229118B2 (ja) * 1993-04-26 2001-11-12 三菱電機株式会社 積層型半導体装置のパターン形成方法
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
JP2000284492A (ja) * 1999-03-30 2000-10-13 Seiko Epson Corp 露光装置、露光方法及びプログラムを記録した記憶媒体
JP2001033860A (ja) * 1999-07-26 2001-02-09 Nidec Copal Corp カメラのフィルム移動量検出装置
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
US6894762B1 (en) * 2002-09-17 2005-05-17 Lsi Logic Corporation Dual source lithography for direct write application
JP2005092137A (ja) * 2003-09-19 2005-04-07 Nikon Corp 露光装置及び露光方法
US20060012779A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009200105A (ja) * 2008-02-19 2009-09-03 Canon Inc 露光装置
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
US20120244459A1 (en) * 2011-03-24 2012-09-27 Nanya Technology Corp. Method for evaluating overlay error and mask for the same
NL2010691A (en) * 2012-05-29 2013-12-02 Asml Netherlands Bv A method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system.
JP5960198B2 (ja) * 2013-07-02 2016-08-02 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
JP6360287B2 (ja) * 2013-08-13 2018-07-18 キヤノン株式会社 リソグラフィ装置、位置合わせ方法、および物品の製造方法
US10908512B2 (en) * 2015-12-24 2021-02-02 Asml Netherlands B.V. Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
JP6730851B2 (ja) * 2016-06-01 2020-07-29 キヤノン株式会社 決定方法、形成方法、プログラム、および物品の製造方法

Also Published As

Publication number Publication date
JP2020091429A (ja) 2020-06-11
KR102789001B1 (ko) 2025-04-01
CN111290223A (zh) 2020-06-16
TW202036181A (zh) 2020-10-01
TWI801685B (zh) 2023-05-11
KR102658787B1 (ko) 2024-04-19
KR20240054936A (ko) 2024-04-26
CN111290223B (zh) 2023-08-15
KR20200069227A (ko) 2020-06-16

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