TWI799512B - 清洗方法及電漿處理裝置 - Google Patents

清洗方法及電漿處理裝置 Download PDF

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Publication number
TWI799512B
TWI799512B TW108105055A TW108105055A TWI799512B TW I799512 B TWI799512 B TW I799512B TW 108105055 A TW108105055 A TW 108105055A TW 108105055 A TW108105055 A TW 108105055A TW I799512 B TWI799512 B TW I799512B
Authority
TW
Taiwan
Prior art keywords
processing apparatus
plasma processing
cleaning method
cleaning
plasma
Prior art date
Application number
TW108105055A
Other languages
English (en)
Other versions
TW201937597A (zh
Inventor
岡信介
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201937597A publication Critical patent/TW201937597A/zh
Application granted granted Critical
Publication of TWI799512B publication Critical patent/TWI799512B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
TW108105055A 2018-02-16 2019-02-15 清洗方法及電漿處理裝置 TWI799512B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018025594A JP7055031B2 (ja) 2018-02-16 2018-02-16 クリーニング方法及びプラズマ処理装置
JP2018-025594 2018-02-16

Publications (2)

Publication Number Publication Date
TW201937597A TW201937597A (zh) 2019-09-16
TWI799512B true TWI799512B (zh) 2023-04-21

Family

ID=67618079

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108105055A TWI799512B (zh) 2018-02-16 2019-02-15 清洗方法及電漿處理裝置

Country Status (4)

Country Link
US (1) US11594399B2 (zh)
JP (1) JP7055031B2 (zh)
KR (1) KR20190099131A (zh)
TW (1) TWI799512B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690097B (zh) * 2019-09-26 2022-06-24 深圳市金奥兰科技有限公司 一种等离子刻蚀机用尘埃消除装置
CN111530851B (zh) * 2020-05-15 2021-08-06 聚束科技（北京）有限公司 一种粒子束显微镜的样品除污方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140053867A1 (en) * 2009-01-16 2014-02-27 Novellus Systems, Inc. Plasma clean method for deposition chamber
TW201801179A (zh) * 2016-03-31 2018-01-01 東京威力科創股份有限公司 利用無晶片乾式清潔之光學放射光譜進行的乾式蝕刻處理特徵控制
US20180005814A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Selective atomic layer deposition with post-dose treatment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283494A (ja) * 1996-04-12 1997-10-31 Sony Corp プラズマエッチング装置およびプラズマエッチング方法
TW422892B (en) 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP2002057149A (ja) 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
JP2003297817A (ja) 2002-04-03 2003-10-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法、半導体装置、そのためのプラズマｃｖｄ装置
JP4052477B2 (ja) 2004-02-25 2008-02-27 三菱重工業株式会社 プラズマ処理装置のクリーニング方法
JP5214316B2 (ja) 2008-04-22 2013-06-19 大陽日酸株式会社 プラズマ成膜装置のクリーニング方法
JP5364514B2 (ja) 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
JP5956933B2 (ja) 2013-01-15 2016-07-27 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6462477B2 (ja) 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
JP2017212361A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
KR20180019906A (ko) * 2016-08-17 2018-02-27 삼성전자주식회사 플라즈마 식각장비 및 이를 이용한 반도체 소자의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140053867A1 (en) * 2009-01-16 2014-02-27 Novellus Systems, Inc. Plasma clean method for deposition chamber
TW201801179A (zh) * 2016-03-31 2018-01-01 東京威力科創股份有限公司 利用無晶片乾式清潔之光學放射光譜進行的乾式蝕刻處理特徵控制
US20180005814A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Selective atomic layer deposition with post-dose treatment

Also Published As

Publication number Publication date
KR20190099131A (ko) 2019-08-26
US20190259578A1 (en) 2019-08-22
JP2019145540A (ja) 2019-08-29
JP7055031B2 (ja) 2022-04-15
TW201937597A (zh) 2019-09-16
US11594399B2 (en) 2023-02-28

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TWI799512B (zh) 清洗方法及電漿處理裝置