TWI799463B - 氣體供給系統及氣體供給方法 - Google Patents
氣體供給系統及氣體供給方法 Download PDFInfo
- Publication number
- TWI799463B TWI799463B TW107138928A TW107138928A TWI799463B TW I799463 B TWI799463 B TW I799463B TW 107138928 A TW107138928 A TW 107138928A TW 107138928 A TW107138928 A TW 107138928A TW I799463 B TWI799463 B TW I799463B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas supply
- supply system
- supply method
- gas
- supply
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0664—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging flows from a single flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/131—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components
- G05D11/132—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components by controlling the flow of the individual components
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Automation & Control Theory (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Flow Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-215589 | 2017-11-08 | ||
JP2017215589A JP7122102B2 (ja) | 2017-11-08 | 2017-11-08 | ガス供給システム及びガス供給方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201933510A TW201933510A (zh) | 2019-08-16 |
TWI799463B true TWI799463B (zh) | 2023-04-21 |
Family
ID=66328457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107138928A TWI799463B (zh) | 2017-11-08 | 2018-11-02 | 氣體供給系統及氣體供給方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10996688B2 (zh) |
JP (2) | JP7122102B2 (zh) |
KR (1) | KR102546086B1 (zh) |
CN (2) | CN116936416A (zh) |
TW (1) | TWI799463B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109219863B (zh) * | 2016-06-03 | 2021-02-09 | 应用材料公司 | 基板距离监控 |
US10665430B2 (en) * | 2016-07-11 | 2020-05-26 | Tokyo Electron Limited | Gas supply system, substrate processing system and gas supply method |
JP7296699B2 (ja) * | 2018-07-02 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法 |
DE102018222522A1 (de) * | 2018-12-20 | 2020-06-25 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb einer Gaszuführungseinrichtung sowie Gaszuführungseinrichtung zur Durchführung des Verfahrens und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
KR102074103B1 (ko) * | 2019-09-10 | 2020-02-25 | 윤진해 | 운반대차를 구비한 반도체 제조라인 모니터링 장치 |
JP7226222B2 (ja) * | 2019-09-24 | 2023-02-21 | 東京エレクトロン株式会社 | ガス供給装置及びガス供給方法 |
JP7296854B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給方法及び基板処理装置 |
JP6910560B1 (ja) * | 2020-01-23 | 2021-07-28 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理装置の運転方法 |
US20230136494A1 (en) * | 2020-03-30 | 2023-05-04 | Fujikin Incorporated | Valve system, output monitoring method and output adjusting method for diaphragm valve, and semiconductor manufacturing apparatus |
US11655912B2 (en) | 2021-01-14 | 2023-05-23 | Hitachi Metals, Ltd. | Bellows diaphragm assembly |
US11914408B2 (en) * | 2022-01-21 | 2024-02-27 | Hamilton Sundstrand Corporation | Active flow control system |
CN117026220B (zh) * | 2023-10-09 | 2023-12-15 | 上海陛通半导体能源科技股份有限公司 | 压力调节装置及包含其的沉积设备、系统及压力控制方法 |
Citations (3)
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TW201428811A (zh) * | 2012-09-21 | 2014-07-16 | Tokyo Electron Ltd | 氣體供給方法及電漿處理裝置 |
TW201530279A (zh) * | 2013-08-30 | 2015-08-01 | Fujikin Kk | 氣體分流供應裝置以及氣體分流供應方法 |
US20160064192A1 (en) * | 2013-05-13 | 2016-03-03 | Tokyo Electron Limited | Method for supplying gas, and plasma processing apparatus |
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JPS6210656Y2 (zh) * | 1980-02-20 | 1987-03-13 | ||
JPH06295862A (ja) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
JPH11265218A (ja) * | 1998-03-18 | 1999-09-28 | Kokusai Electric Co Ltd | 自動流量/流量比変換データ校正装置及びガス供給装置 |
JP3522535B2 (ja) * | 1998-05-29 | 2004-04-26 | 忠弘 大見 | 圧力式流量制御装置を備えたガス供給設備 |
US6619304B2 (en) * | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
KR100454242B1 (ko) | 2001-12-28 | 2004-10-26 | 한국디엔에스 주식회사 | 웨이퍼 건조 방법 |
JP3856730B2 (ja) | 2002-06-03 | 2006-12-13 | 東京エレクトロン株式会社 | 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。 |
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JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
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JP5689294B2 (ja) * | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | 処理装置 |
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KR101170596B1 (ko) * | 2012-03-06 | 2012-08-02 | 주성엔지니어링(주) | 가스분사장치 |
JP6155706B2 (ja) | 2013-03-06 | 2017-07-05 | 株式会社Screenホールディングス | 基板処理装置 |
JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
US10453721B2 (en) | 2016-03-15 | 2019-10-22 | Applied Materials, Inc. | Methods and assemblies for gas flow ratio control |
JP6546874B2 (ja) | 2016-04-13 | 2019-07-17 | 東京エレクトロン株式会社 | ガス供給機構及び半導体製造システム |
US10665430B2 (en) * | 2016-07-11 | 2020-05-26 | Tokyo Electron Limited | Gas supply system, substrate processing system and gas supply method |
US10403476B2 (en) * | 2016-11-09 | 2019-09-03 | Lam Research Corporation | Active showerhead |
JP6914063B2 (ja) * | 2017-03-10 | 2021-08-04 | 株式会社堀場エステック | ガス制御システム、該ガス制御システムを備えた成膜装置、該ガス制御システムに用いるプログラム及びガス制御方法。 |
JP6913498B2 (ja) * | 2017-04-18 | 2021-08-04 | 東京エレクトロン株式会社 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
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2017
- 2017-11-08 JP JP2017215589A patent/JP7122102B2/ja active Active
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2018
- 2018-11-01 KR KR1020180132785A patent/KR102546086B1/ko active IP Right Grant
- 2018-11-01 CN CN202310986755.2A patent/CN116936416A/zh active Pending
- 2018-11-01 CN CN201811294307.1A patent/CN109755157B/zh active Active
- 2018-11-02 TW TW107138928A patent/TWI799463B/zh active
- 2018-11-05 US US16/180,047 patent/US10996688B2/en active Active
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2021
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW201428811A (zh) * | 2012-09-21 | 2014-07-16 | Tokyo Electron Ltd | 氣體供給方法及電漿處理裝置 |
US20160064192A1 (en) * | 2013-05-13 | 2016-03-03 | Tokyo Electron Limited | Method for supplying gas, and plasma processing apparatus |
TW201530279A (zh) * | 2013-08-30 | 2015-08-01 | Fujikin Kk | 氣體分流供應裝置以及氣體分流供應方法 |
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US20190138033A1 (en) | 2019-05-09 |
JP7122102B2 (ja) | 2022-08-19 |
TW201933510A (zh) | 2019-08-16 |
CN116936416A (zh) | 2023-10-24 |
US11698648B2 (en) | 2023-07-11 |
JP2019087092A (ja) | 2019-06-06 |
JP7425109B2 (ja) | 2024-01-30 |
US20210216088A1 (en) | 2021-07-15 |
KR102546086B1 (ko) | 2023-06-22 |
JP2022093651A (ja) | 2022-06-23 |
KR20190052616A (ko) | 2019-05-16 |
US10996688B2 (en) | 2021-05-04 |
CN109755157B (zh) | 2023-08-29 |
CN109755157A (zh) | 2019-05-14 |
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