TWI799164B - 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 - Google Patents

遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 Download PDF

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Publication number
TWI799164B
TWI799164B TW111107820A TW111107820A TWI799164B TW I799164 B TWI799164 B TW I799164B TW 111107820 A TW111107820 A TW 111107820A TW 111107820 A TW111107820 A TW 111107820A TW I799164 B TWI799164 B TW I799164B
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TW
Taiwan
Prior art keywords
film
mask
pattern
mentioned
etching stopper
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TW111107820A
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English (en)
Chinese (zh)
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TW202223532A (zh
Inventor
大久保亮
宍戸博明
打田崇
Original Assignee
日商Ｈｏｙａ股份有限公司
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Publication of TW202223532A publication Critical patent/TW202223532A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H10P50/242—
    • H10P76/4085—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
TW111107820A 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 TWI799164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-077200 2017-04-08
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW202223532A TW202223532A (zh) 2022-06-16
TWI799164B true TWI799164B (zh) 2023-04-11

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Family Applications (2)

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TW111107820A TWI799164B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法
TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

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TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

Country Status (6)

Country Link
US (2) US11119400B2 (enExample)
JP (1) JP6808566B2 (enExample)
KR (1) KR102510830B1 (enExample)
SG (2) SG11201909351RA (enExample)
TW (2) TWI799164B (enExample)
WO (1) WO2018186320A1 (enExample)

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* Cited by examiner, † Cited by third party
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SG11201907771TA (en) 2017-02-27 2019-09-27 Hoya Corp Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7231094B2 (ja) * 2018-12-12 2023-03-01 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118201466B (zh) * 2024-05-20 2024-07-23 北京量子信息科学研究院 一种量子信息处理器件的制备方法及量子信息处理器件

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CN104903792A (zh) * 2013-01-15 2015-09-09 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP2015222448A (ja) * 2013-09-24 2015-12-10 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP2016188958A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
TW201704847A (zh) * 2015-03-19 2017-02-01 Ｈｏｙａ股份有限公司 空白罩體、轉印用罩體、轉印用罩體之製造方法及半導體元件之製造方法
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US5380608A (en) 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
JPH05289305A (ja) * 1992-04-08 1993-11-05 Dainippon Printing Co Ltd 位相シフトフォトマスク
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CN104903792A (zh) * 2013-01-15 2015-09-09 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP2015222448A (ja) * 2013-09-24 2015-12-10 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
TW201704847A (zh) * 2015-03-19 2017-02-01 Ｈｏｙａ股份有限公司 空白罩體、轉印用罩體、轉印用罩體之製造方法及半導體元件之製造方法
JP2016188958A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
TW201708940A (zh) * 2015-05-15 2017-03-01 Ｈｏｙａ股份有限公司 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法

Also Published As

Publication number Publication date
TWI760471B (zh) 2022-04-11
US20210364910A1 (en) 2021-11-25
SG10202112818PA (en) 2021-12-30
SG11201909351RA (en) 2019-11-28
KR20190137790A (ko) 2019-12-11
TW201842402A (zh) 2018-12-01
WO2018186320A1 (ja) 2018-10-11
TW202223532A (zh) 2022-06-16
US11435662B2 (en) 2022-09-06
JP6808566B2 (ja) 2021-01-06
JP2018180170A (ja) 2018-11-15
US20210109436A1 (en) 2021-04-15
KR102510830B1 (ko) 2023-03-17
US11119400B2 (en) 2021-09-14

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