TWI799164B - 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 - Google Patents

遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 Download PDF

Info

Publication number
TWI799164B
TWI799164B TW111107820A TW111107820A TWI799164B TW I799164 B TWI799164 B TW I799164B TW 111107820 A TW111107820 A TW 111107820A TW 111107820 A TW111107820 A TW 111107820A TW I799164 B TWI799164 B TW I799164B
Authority
TW
Taiwan
Prior art keywords
film
mask
pattern
mentioned
etching stopper
Prior art date
Application number
TW111107820A
Other languages
English (en)
Chinese (zh)
Other versions
TW202223532A (zh
Inventor
大久保亮
宍戸博明
打田崇
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202223532A publication Critical patent/TW202223532A/zh
Application granted granted Critical
Publication of TWI799164B publication Critical patent/TWI799164B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW111107820A 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 TWI799164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-077200 2017-04-08
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW202223532A TW202223532A (zh) 2022-06-16
TWI799164B true TWI799164B (zh) 2023-04-11

Family

ID=63712267

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111107820A TWI799164B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法
TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

Country Status (6)

Country Link
US (2) US11119400B2 (enExample)
JP (1) JP6808566B2 (enExample)
KR (1) KR102510830B1 (enExample)
SG (2) SG10202112818PA (enExample)
TW (2) TWI799164B (enExample)
WO (1) WO2018186320A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201907771TA (en) 2017-02-27 2019-09-27 Hoya Corp Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7231094B2 (ja) * 2018-12-12 2023-03-01 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118201466B (zh) * 2024-05-20 2024-07-23 北京量子信息科学研究院 一种量子信息处理器件的制备方法及量子信息处理器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104903792A (zh) * 2013-01-15 2015-09-09 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP2015222448A (ja) * 2013-09-24 2015-12-10 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP2016188958A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
TW201704847A (zh) * 2015-03-19 2017-02-01 Hoya Corp 空白罩體、轉印用罩體、轉印用罩體之製造方法及半導體元件之製造方法
TW201708940A (zh) * 2015-05-15 2017-03-01 Hoya Corp 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437579A (en) 1977-08-30 1979-03-20 Mitsubishi Electric Corp Chrome plate
JPH04125643A (ja) 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5380608A (en) 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
JPH05289305A (ja) * 1992-04-08 1993-11-05 Dainippon Printing Co Ltd 位相シフトフォトマスク
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
JP3093632U (ja) 2002-03-01 2003-05-16 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US8535855B2 (en) * 2010-05-19 2013-09-17 Hoya Corporation Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
JP6229466B2 (ja) 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク
KR101759046B1 (ko) * 2014-03-18 2017-07-17 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
KR101504557B1 (ko) 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6418035B2 (ja) 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6573806B2 (ja) * 2015-08-31 2019-09-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
WO2017077915A1 (ja) 2015-11-06 2017-05-11 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法
US20190040516A1 (en) 2016-02-15 2019-02-07 Hoya Corporation Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104903792A (zh) * 2013-01-15 2015-09-09 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP2015222448A (ja) * 2013-09-24 2015-12-10 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
TW201704847A (zh) * 2015-03-19 2017-02-01 Hoya Corp 空白罩體、轉印用罩體、轉印用罩體之製造方法及半導體元件之製造方法
JP2016188958A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
TW201708940A (zh) * 2015-05-15 2017-03-01 Hoya Corp 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法

Also Published As

Publication number Publication date
TW201842402A (zh) 2018-12-01
SG10202112818PA (en) 2021-12-30
US20210364910A1 (en) 2021-11-25
WO2018186320A1 (ja) 2018-10-11
JP2018180170A (ja) 2018-11-15
SG11201909351RA (en) 2019-11-28
US20210109436A1 (en) 2021-04-15
US11435662B2 (en) 2022-09-06
JP6808566B2 (ja) 2021-01-06
KR20190137790A (ko) 2019-12-11
TWI760471B (zh) 2022-04-11
KR102510830B1 (ko) 2023-03-17
TW202223532A (zh) 2022-06-16
US11119400B2 (en) 2021-09-14

Similar Documents

Publication Publication Date Title
US12007684B2 (en) Mask blank, method of manufacturing imprint mold, method of manufacturing transfer mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US11435662B2 (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7033638B2 (ja) マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法