KR102510830B1 - 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법 Download PDF

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KR102510830B1
KR102510830B1 KR1020197027637A KR20197027637A KR102510830B1 KR 102510830 B1 KR102510830 B1 KR 102510830B1 KR 1020197027637 A KR1020197027637 A KR 1020197027637A KR 20197027637 A KR20197027637 A KR 20197027637A KR 102510830 B1 KR102510830 B1 KR 102510830B1
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South Korea
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film
mask
pattern
etching stopper
etching
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KR20190137790A (ko
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료 오쿠보
히로아키 시시도
타카시 우치다
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H01L21/0337—
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
KR1020197027637A 2017-04-08 2018-04-02 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법 Active KR102510830B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JPJP-P-2017-077200 2017-04-08
PCT/JP2018/014039 WO2018186320A1 (ja) 2017-04-08 2018-04-02 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20190137790A KR20190137790A (ko) 2019-12-11
KR102510830B1 true KR102510830B1 (ko) 2023-03-17

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KR1020197027637A Active KR102510830B1 (ko) 2017-04-08 2018-04-02 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법

Country Status (6)

Country Link
US (2) US11119400B2 (enExample)
JP (1) JP6808566B2 (enExample)
KR (1) KR102510830B1 (enExample)
SG (2) SG11201909351RA (enExample)
TW (2) TWI799164B (enExample)
WO (1) WO2018186320A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102273801B1 (ko) 2017-02-27 2021-07-06 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법
JP7231094B2 (ja) * 2018-12-12 2023-03-01 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7638700B2 (ja) * 2020-12-24 2025-03-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN118201466B (zh) * 2024-05-20 2024-07-23 北京量子信息科学研究院 一种量子信息处理器件的制备方法及量子信息处理器件

Citations (2)

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JP2008304942A (ja) 2002-03-01 2008-12-18 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
KR101504557B1 (ko) 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크

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JPH04125643A (ja) 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5380608A (en) 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
JPH05289305A (ja) * 1992-04-08 1993-11-05 Dainippon Printing Co Ltd 位相シフトフォトマスク
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5762819B2 (ja) * 2010-05-19 2015-08-12 Hoya株式会社 マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
CN104903792B (zh) * 2013-01-15 2019-11-01 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
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JP2008304942A (ja) 2002-03-01 2008-12-18 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
KR101504557B1 (ko) 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크

Also Published As

Publication number Publication date
KR20190137790A (ko) 2019-12-11
TW201842402A (zh) 2018-12-01
US11435662B2 (en) 2022-09-06
JP6808566B2 (ja) 2021-01-06
TWI799164B (zh) 2023-04-11
TWI760471B (zh) 2022-04-11
US20210364910A1 (en) 2021-11-25
TW202223532A (zh) 2022-06-16
US20210109436A1 (en) 2021-04-15
US11119400B2 (en) 2021-09-14
JP2018180170A (ja) 2018-11-15
SG11201909351RA (en) 2019-11-28
WO2018186320A1 (ja) 2018-10-11
SG10202112818PA (en) 2021-12-30

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